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1. 发明授权

US08878213B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08878213B2
公开(公告)日：2014-11-04
申请号：US13220072
申请日：2011-08-29
申请人： Naoharu Sugiyama , Tomonari Shioda , Shigeya Kimura , Koichi Tachibana , Shinya Nunoue
发明人： Naoharu Sugiyama , Tomonari Shioda , Shigeya Kimura , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L33/00 , H01L33/42 , H01L33/22 , H01L33/08
CPC分类号： H01L33/007 , H01L33/08 , H01L33/22 , H01L33/42 , H01L2933/0016 , H01L2933/0058
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括n型层，发光层，p型层和透明电极。 n型层包括氮化物半导体，其厚度不大于500nm。发光层设置在n型层上。 p型层设置在发光层上，并且包括氮化物半导体。透明电极与n型层接触。 n型层设置在透明电极和发光层之间。

2. 发明授权

US08604496B2 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US08604496B2
公开(公告)日：2013-12-10
申请号：US13214690
申请日：2011-08-22
申请人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.
摘要翻译：根据一个实施例，光学半导体器件包括n型半导体层，p型半导体层和功能部件。功能部件设置在n型半导体层和p型半导体层之间。功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。至少两个有源层包括多层堆叠体，n侧阻挡层，阱层和p侧势垒层。多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。

3. 发明申请

US20120132940A1 OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：光学半导体器件
公开(公告)号：US20120132940A1
公开(公告)日：2012-05-31
申请号：US13214690
申请日：2011-08-22
申请人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hisashi Yoshida , Koichi Tachibana , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/32
CPC分类号： H01L33/06 , H01L33/32
摘要： According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer.
摘要翻译：根据一个实施例，光学半导体器件包括n型半导体层，p型半导体层和功能部件。功能部件设置在n型半导体层和p型半导体层之间。功能部件包括在从n型半导体层朝向p型半导体层的方向上堆叠的多个有源层。至少两个有源层包括多层堆叠体，n侧阻挡层，阱层和p侧势垒层。多层堆叠体包括沿该方向交替堆叠的多个厚膜层和多个薄膜层。 n侧阻挡层设置在多层叠层体和p型层之间。阱层设置在n侧阻挡层和p型层之间。 p侧阻挡层设置在阱层和p型层之间。

4. 发明授权

US09065003B2 Semiconductor light emitting device and semiconductor wafer 有权
标题翻译：半导体发光器件和半导体晶片
公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/06 , H01L33/12 , H01L33/32 , H01L33/02
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

5. 发明申请

US20130087760A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER 有权
标题翻译：半导体发光器件和半导体晶体管
公开(公告)号：US20130087760A1
公开(公告)日：2013-04-11
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/04
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层，发出峰值波长为440纳米以上的光。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度为5×10 9 / cm 2以下。第一半导体层和发光层之间的晶格失配因子为0.11％以下。

6. 发明授权

US08093083B1 Method for manufacturing a semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US08093083B1
公开(公告)日：2012-01-10
申请号：US13029416
申请日：2011-02-17
申请人： Toshiki Hikosaka , Tomonari Shioda , Yoshiyuki Harada , Naoharu Sugiyama , Koichi Tachibana , Shinya Nunoue
发明人： Toshiki Hikosaka , Tomonari Shioda , Yoshiyuki Harada , Naoharu Sugiyama , Koichi Tachibana , Shinya Nunoue
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The device includes a crystal layer including a nitride semiconductor. The crystal layer contains In and Ga atoms. The method can include forming the crystal layer by supplying a source gas including a first molecule including Ga atoms and a second molecule including In atoms onto a base body. The crystal layer has a ratio xs of a number of the In atoms to a total of the In atoms and the Ga atoms being not less than 0.2 and not more than 0.4. A vapor phase supply ratio xv of In is a ratio of a second partial pressure to a total of first and second partial pressures. The first and second partial pressures are pressure of the first and second molecules and degradation species of the first and second molecules on the source gas, respectively. (1−1/xv)/(1−1/xs) is less than 0.1.
摘要翻译：在一个实施例中，公开了一种用于制造半导体发光器件的方法。该器件包括包含氮化物半导体的晶体层。晶体层含有In和Ga原子。该方法可以包括通过将包括Ga原子的第一分子和包括In原子的第二分子的源气体供应到基体上来形成晶体层。晶体层的In原子数与In原子的总和的比xs和Ga原子的比率不小于0.2且不大于0.4。 In的气相供给比xv是第二分压与第一和第二分压的总和的比。第一和第二分压分别是源气体上的第一和第二分子的压力和第一和第二分子的降解物质。（1-1 / xv）/（1-1 / xs）小于0.1。

7. 发明授权

US08928000B2 Nitride semiconductor wafer including different lattice constants 有权
标题翻译：氮化物半导体晶片包括不同的晶格常数
公开(公告)号：US08928000B2
公开(公告)日：2015-01-06
申请号：US13405903
申请日：2012-02-27
申请人： Hung Hung , Tomonari Shioda , Jongil Hwang , Naoharu Sugiyama , Shinya Nunoue
发明人： Hung Hung , Tomonari Shioda , Jongil Hwang , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/15 , H01L21/02 , C30B23/02 , H01L31/10 , C30B25/18 , H01L33/04 , H01L29/778 , H01L29/812 , H01L33/12 , C30B29/40 , H01L29/20 , H01L33/00
CPC分类号： H01L33/04 , C30B23/02 , C30B25/183 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/778 , H01L29/7787 , H01L29/812 , H01L31/10 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×1018 cm−3 or more and less than 1×1021 cm−3. The first upper layer has a lattice constant larger than or equal to that of the first doped layer and larger than that of the first lower layer.
摘要翻译：根据一个实施例，氮化物半导体晶片包括硅衬底，设置在硅衬底上的下部应变弛豫层，设置在下部应变弛豫层上的中间层，设置在中间层上的上部应变弛豫层和功能性层设置在上部应变松弛层上。中间层包括第一下层，设置在第一下层上的第一掺杂层和设置在第一掺杂层上的第一上层。第一掺杂层的晶格常数大于或等于第一下层的晶格常数，并且含有1×1018cm-3以上且小于1×1021cm-3的杂质。第一上层具有大于或等于第一掺杂层的晶格常数，并且大于第一下层的晶格常数。

8. 发明授权

US08809101B2 Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer 有权
标题翻译：半导体发光器件，氮化物半导体晶片，以及氮化物半导体层的制造方法
公开(公告)号：US08809101B2
公开(公告)日：2014-08-19
申请号：US13218909
申请日：2011-08-26
申请人： Jongil Hwang , Tomonari Shioda , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Jongil Hwang , Tomonari Shioda , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/325
摘要： According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1−z1Inz1N (0
摘要翻译：根据一个实施例，半导体发光器件包括：第一和第二半导体层，发光部分和含In层。第一半导体层通过基底层形成在硅衬底上。发光部分设置在第一半导体层上，并且包括阻挡层和设置在包括Ga1-z1Inz1N（0

9. 发明授权

US08525194B2 Nitride semiconductor device, nitride semiconductor wafer and method for manufacturing nitride semiconductor layer 失效
公开(公告)号：US08525194B2
公开(公告)日：2013-09-03
申请号：US13222561
申请日：2011-08-31
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Taisuke Sato , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/201 , H01L33/00
CPC分类号： H01L33/32 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type.

10. 发明申请

US20130062612A1 NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER 有权
标题翻译：氮化物半导体器件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：US20130062612A1
公开(公告)日：2013-03-14
申请号：US13407169
申请日：2012-02-28
申请人： Tomonari Shioda , Hung Hung , Jongil Hwang , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
发明人： Tomonari Shioda , Hung Hung , Jongil Hwang , Hisashi Yoshida , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L33/007 , H01L33/12 , H01L33/32
摘要： According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer.
摘要翻译：根据一个实施例，氮化物半导体器件包括基底层，第一堆叠中间层和功能层。基底层包括形成在基底上的AlN缓冲层。第一堆叠中间层设置在基础层上。第一堆叠中间层包括设置在基底层上的第一AlN中间层，设置在第一AlN中间层上的第一AlGaN中间层和设置在第一AlGaN中间层上的第一GaN中间层。功能层设置在第一堆叠中间层上。第一AlGaN中间层包括与第一AlN中间层接触的第一阶梯层。第一层中的Al组成比在层叠方向上从第一AlN中间层朝向第一阶层逐渐降低。

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