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    • 1. 发明申请
    • CHEMICAL-MECHANICAL POLISHING PAD CONDITIONING SYSTEM
    • 化学机械抛光垫调节系统
    • US20110244764A1
    • 2011-10-06
    • US12754645
    • 2010-04-06
    • Nannaji SakaThor EusnerJung-Hoon Chun
    • Nannaji SakaThor EusnerJung-Hoon Chun
    • B24B1/00B24B21/18
    • B24B53/017
    • Polishing pad conditioning system. The system includes a first rotatable platen supporting a polishing pad containing asperities having a radius of curvature. A second rotatable platen supports a disk of bulk material having holes therethrough, the second rotatable platen supported for translation as well as rotation. Means are provided for pushing the polishing pad and bulk material into contact at an interface during rotation and translation and means are provided for passing a slurry through the holes in the bulk material to the interface whereby the radius of curvature of the pad asperities is increased. Water may be delivered to the bulk material for cooling. A process for conditioning a polishing pad is also disclosed.
    • 抛光垫调节系统。 该系统包括支撑包含具有曲率半径的凹凸的抛光垫的第一可旋转压板。 第二可旋转压板支撑具有穿过其中的孔的散装材料盘,第二可旋转压板被支撑成平移和旋转。 提供了用于在旋转和平移期间将抛光垫和散装材料在界面处推动接触的装置,并且提供了用于使浆料通过块状材料中的孔通过到界面的装置,由此增加焊盘粗糙度的曲率半径。 水可以输送到散装材料进行冷却。 还公开了一种用于调理抛光垫的工艺。
    • 2. 发明授权
    • Chemical-mechanical polishing pad conditioning system
    • 化学机械抛光垫调节系统
    • US08758091B2
    • 2014-06-24
    • US12754645
    • 2010-04-06
    • Nannaji SakaThor EusnerJung-Hoon Chun
    • Nannaji SakaThor EusnerJung-Hoon Chun
    • B24B1/00B24B21/18
    • B24B53/017
    • Polishing pad conditioning system. The system includes a first rotatable platen supporting a polishing pad containing asperities having a radius of curvature. A second rotatable platen supports a disk of bulk material having holes therethrough, the second rotatable platen supported for translation as well as rotation. Means are provided for pushing the polishing pad and bulk material into contact at an interface during rotation and translation and means are provided for passing a slurry through the holes in the bulk material to the interface whereby the radius of curvature of the pad asperities is increased. Water may be delivered to the bulk material for cooling. A process for conditioning a polishing pad is also disclosed.
    • 抛光垫调节系统。 该系统包括支撑包含具有曲率半径的凹凸的抛光垫的第一可旋转压板。 第二可旋转压板支撑具有穿过其中的孔的散装材料盘,第二可旋转压板被支撑成平移和旋转。 提供了用于在旋转和平移期间将抛光垫和散装材料在界面处推动接触的装置,并且提供了用于使浆料通过块状材料中的孔通过到界面的装置,由此增加焊盘粗糙度的曲率半径。 水可以输送到散装材料进行冷却。 还公开了一种用于调理抛光垫的工艺。
    • 3. 发明授权
    • Solid/liquid interface detection in continuous casting processes by .gamma.
-
    • 通过γ射线衰减在连续铸造工艺中进行固/液界面检测
    • US5509460A
    • 1996-04-23
    • US296342
    • 1994-08-25
    • Jung-Hoon ChunRichard C. LanzaNannaji Saka
    • Jung-Hoon ChunRichard C. LanzaNannaji Saka
    • B22D11/20B22D11/22B22D11/16
    • B22D11/207
    • A liquid metal/solid metal interface detecting device comprises in general a radiation source for generating gamma radiation, which is directed to pass through a strand extruded from a continuous casting mold. A detector detects the gamma radiation passing through the partially solidified strand to determine a spatial profile for a liquid metal/solid metal interface by relying on the different gamma radiation attenuation characteristics of the solid metal and the liquid metal. Preferably, the gamma radiation is at energies of greater than one million electron volts. In some embodiments, a movable support carries the radiation source and the detector and moves the radiation source and detector along and around the ingot enabling generation of a three-dimensional profile of the liquid metal/solid metal interface by utilizing tomographic imaging techniques. Alternatively, solidification at a single region is determined and this information is used to control the formation of the strand in process controller implementations.
    • 液体金属/固体金属界面检测装置通常包括用于产生γ辐射的辐射源,其被引导通过从连续铸模中挤出的股线。 检测器通过依靠固体金属和液态金属的不同γ辐射衰减特性来检测通过部分凝固的股线的伽马辐射,以确定液态金属/固体金属界面的空间分布。 优选地,伽马辐射的能量大于一百万电子伏特。 在一些实施例中,可移动支撑件承载辐射源和检测器并且沿着晶锭移动辐射源和检测器,使得能够通过利用断层成像技术产生液态金属/固体金属界面的三维轮廓。 或者,确定单个区域的固化,并且该信息用于控制过程控制器实施中的链的形成。
    • 4. 发明授权
    • Solid/liquid interface detection in casting processes by gamma-ray
attenuation
    • 通过γ射线衰减在铸造过程中进行固/液界面检测
    • US5673746A
    • 1997-10-07
    • US625384
    • 1996-04-01
    • Jung-Hoon ChunRichard C. LanzaNannaji Saka
    • Jung-Hoon ChunRichard C. LanzaNannaji Saka
    • B22D11/20B22D11/16B22D11/22
    • B22D11/207
    • A liquid metal/solid metal interface detecting device comprises in general a radiation source for generating gamma radiation, which is directed to pass through a strand extruded from a continuous casting mold. A detector detects the gamma radiation passing through the partially solidified strand to determine a spatial profile for a liquid metal/solid metal interface by relying on the different gamma radiation attenuation characteristics of the solid metal and the liquid metal. Preferably, the gamma radiation is at energies of greater than one million electron volts. In some embodiments, a movable support carries the radiation source and the detector and moves the radiation source and detector along and around the ingot enabling generation of a three-dimensional profile of the liquid metal/solid metal interface by utilizing tomographic imaging techniques. Alternatively, solidification at a single region is determined and this information is used to control the formation of the strand in process controller implementations. Surface temperature detectors can also be used to provide more information about the solidification.
    • 液体金属/固体金属界面检测装置通常包括用于产生γ辐射的辐射源,其被引导通过从连续铸模中挤出的股线。 检测器通过依靠固体金属和液态金属的不同γ辐射衰减特性来检测通过部分凝固的股线的伽马辐射,以确定液态金属/固体金属界面的空间分布。 优选地,伽马辐射的能量大于一百万电子伏特。 在一些实施例中,可移动支撑件承载辐射源和检测器并且沿着晶锭移动辐射源和检测器,使得能够通过利用断层成像技术产生液态金属/固体金属界面的三维轮廓。 或者,确定单个区域的固化,并且该信息用于控制过程控制器实施中的链的形成。 表面温度检测器也可用于提供有关固化的更多信息。
    • 6. 发明授权
    • Method for forming ceramic coatings by micro-arc oxidation of reactive metals
    • 通过微弧氧化反应性金属形成陶瓷涂层的方法
    • US06197178B1
    • 2001-03-06
    • US09285604
    • 1999-04-02
    • Jerry L. PatelNannaji Saka
    • Jerry L. PatelNannaji Saka
    • C25D1102
    • C25D11/04C25D11/026
    • A process and apparatus for forming oxide coatings on bodies of aluminum and aluminum alloys are described. The process includes forming an electrolyte bath in an inert container. At least two reactive metal bodies are suspended in the bath. The bodies are connected to electrodes which, in turn, are connected to a multiphase AC circuit. A multiphase power (preferably three-phase between three bodies) potential is imposed between each of the bodies. The bodies are moved in the electrolyte bath relative to each other until micro-arcs occur on the surfaces of the bodies, whereby to commence oxidation of the bodies. The imposition of the potential between each of the bodies is continued until the desired thickness of oxide is formed on the bodies.
    • 描述了一种在铝和铝合金体上形成氧化物涂层的方法和装置。 该方法包括在惰性容器中形成电解质浴。 至少两个反应性金属体悬浮在浴中。 主体连接到电极,电极又连接到多相交流电路。 在每个物体之间施加多相功率(优选三体之间的三相)电位。 主体相对于彼此在电解质浴中移动,直到微弧出现在主体的表面上,从而开始氧化身体。 在每个物体之间施加电位继续进行,直到在物体上形成期望的氧化物厚度。
    • 8. 发明授权
    • Method of chemical mechanical polishing
    • 化学机械抛光方法
    • US06458013B1
    • 2002-10-01
    • US09628962
    • 2000-07-31
    • Nannaji SakaJiun-Yu LaiHilario L. Oh
    • Nannaji SakaJiun-Yu LaiHilario L. Oh
    • B24B4914
    • B24B37/013B24B37/042B24B49/16
    • In the Chemical Mechanical Polishing (CMP) process employed for microelectronics manufacturing, three contact regimes between the wafer surface and the polishing pad may be proposed: direct contact, mixed or partial contact, and hydroplaning. However, an effective in situ method for characterizing the wafer/pad contact and a systematic way of relating contact conditions to the process parameters are still lacking. In this work, the interfacial friction force, measured by a load sensor on the wafer carrier, has been employed to characterize the contact conditions. Models that relate the friction coefficient to the applied pressure, relative velocity, and slurry viscosity are developed and verified by experiments. Additionally, a correlation between friction coefficient and the material removal rate (MR) is established and the effects of process parameters on the Preston constant are investigated.
    • 在用于微电子制造的化学机械抛光(CMP)工艺中,晶片表面和抛光垫之间的三种接触方式可以被提出:直接接触,混合或部分接触和滑水。 然而,仍然缺乏用于表征晶片/焊盘触点的有效原位方法以及将接触条件与过程参数相关联的系统方式。 在这项工作中,已经采用由晶片载体上的载荷传感器测量的界面摩擦力来表征接触条件。 通过实验开发和验证了摩擦系数与施加的压力,相对速度和浆料粘度相关的模型。 另外,建立了摩擦系数与材料去除率(MR)之间的相关性,并研究了工艺参数对Preston常数的影响。