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    • 10. 发明授权
    • Contact integration method
    • 联系方式
    • US07294570B2
    • 2007-11-13
    • US10812117
    • 2004-03-29
    • Richard L. ElliottGuy F. Hudson
    • Richard L. ElliottGuy F. Hudson
    • H01L21/44
    • H01L21/7684H01L21/76838H01L21/76877H01L21/76886H01L23/485H01L2924/0002H01L2924/00
    • A method of making a contact plug and a metallization line structure is disclosed in which a substrate is provided with at least one contact hole within an insulation layer situated on a semiconductor substrate of a semiconductor wafer. A first metal layer is deposited upon the semiconductor wafer within the contact hole. A planarizing step isolates the first metal layer within the insulation layer in the form of a contact plug within the contact hole. A second metal layer is then deposited upon the semiconductor wafer over and upon the contact plug. Metallization lines are patterned and etched from the second metal layer. The contact hole may also be lined with a refractory metal nitride layer, with a refractory metal silicide interface being formed at the bottom of the contact hole as an interface between the contact plug and a silicon layer on the semiconductor substrate. Article qualities are achieved by the inventive method, including reduced interfacial resistance and its consequent faster signal speed for the structure, reduced metal creep where additional selected alloys are allowed to diffuse a selected quantity of preferred alloying elements from the first metal layer to the second metal layer, improved depth-of-focus requirements for patterning metallization lines, and resistance of electromigration in aluminum metallization lines.
    • 公开了一种制造接触插塞和金属化线结构的方法,其中衬底在位于半导体晶片的半导体衬底上的绝缘层内设置有至少一个接触孔。 第一金属层沉积在接触孔内的半导体晶片上。 平面化步骤将绝缘层内的第一金属层以接触孔中的接触塞的形式隔离。 然后将第二金属层沉积在半导体晶片上并在接触插塞上。 金属化线从第二金属层图案化并蚀刻。 接触孔也可以衬有难熔金属氮化物层,难熔金属硅化物界面形成在接触孔的底部,作为接触插塞和半导体衬底上的硅层之间的界面。 通过本发明的方法实现制品品质,包括降低的界面阻力及其结构的更快的信号速度,减少的金属蠕变,其中允许附加的选定合金将选定数量的优选的合金元素从第一金属层扩散到第二金属 层,改善图案化金属化线的聚焦深度要求以及铝金属化线中电迁移的阻力。