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1. 发明授权

US5822292A Multi beam track system and method for an optical memory 失效
标题翻译：多光束跟踪系统和光学存储器的方法
公开(公告)号：US5822292A
公开(公告)日：1998-10-13
申请号：US642324
申请日：1996-05-03
申请人： Nakao Akutsu , Yasuaki Morimoto , Yoshiharu Chikazawa , Akira Kawamura
发明人： Nakao Akutsu , Yasuaki Morimoto , Yoshiharu Chikazawa , Akira Kawamura
IPC分类号： G11B7/125 , G11B7/135 , G11B7/14 , G11B7/00 , G11B3/74
CPC分类号： G11B7/127 , G11B7/1356 , G11B7/14
摘要： A multi beam track system and method is used for the retrieving of information stored in optical memories like optical disks. The information carrying beams reflected on the surface of such a optical disk results in spots on the surface of a detector array. Because these beams are very close to each other, the resulting spots tend to overlap so that cross talk conditions between neighboring channels occur. As result the S/N ratio becomes worse. According to the present invention a plurality of laser beams arranged in a row is used, where the laser beams are linear polarized and the polarization of neighboring beams differ by 90.o slashed., i.e. neighboring laser beams have perpendicular linear polarization. After reflection on the surface of the optical disk the row of reflected laser beams is separated into two rows by an separating means which is polarization dependent so that beams are separated in space according to the polarization. Such a separator can be a polarizing beamsplitter or a birefringent prism crystal. As a result two spacially separated rows of laser beams are achieved, which can be detected by two separate detectors. As result no overlap between neighboring spots occurs on the surface of the detectors, resulting in the elimination of crosstalk.
摘要翻译：多光束跟踪系统和方法用于检索光存储器如光盘中存储的信息。在这种光盘的表面上反射的光束的信息导致检测器阵列表面上的斑点。由于这些光束彼此非常接近，所得到的光点倾向于重叠，从而发生相邻通道之间的串扰条件。结果，S / N比变差。根据本发明，使用排列成一行的多个激光束，其中激光束是线性偏振的，并且相邻光束的偏振度相差90 + 526，即相邻的激光束具有垂直的线偏振。在光盘表面上反射后，通过分离装置将反射激光束的行分离成两行，该分离装置是偏振相关的，使得根据极化在空间中分离光束。这种分离器可以是偏振分束器或双折射棱镜晶体。结果实现了两个空间分离的激光束行，其可以由两个单独的检测器检测。结果，在检测器的表面上没有出现相邻点之间的重叠，导致消除串扰。

2. 发明申请

US20060057824A1 Apparatus for producing nitride semiconductor, method for producing nitride semiconductor, and semiconductor laser device obtained by the method 审中-公开
标题翻译：用于生产氮化物半导体的设备，用于生产氮化物半导体的方法以及通过该方法获得的半导体激光器件
公开(公告)号：US20060057824A1
公开(公告)日：2006-03-16
申请号：US11221951
申请日：2005-09-09
申请人： Masahiro Araki , Eiji Yamada , Takayuki Yuasa , Yuhzoh Tsuda , Nakao Akutsu
发明人： Masahiro Araki , Eiji Yamada , Takayuki Yuasa , Yuhzoh Tsuda , Nakao Akutsu
IPC分类号： C23C16/00 , H01L21/20
CPC分类号： C23C16/303 , B82Y20/00 , C23C16/45504 , C23C16/45563 , C23C16/45574 , C30B25/14 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01S5/0014 , H01S5/0202 , H01S5/34333 , H01S2304/04
摘要： The present invention relates to an apparatus for producing a nitride semiconductor by crystal-growing the nitride semiconductor on a substrate by diffusing a gas containing a source gas of group III element and a source gas of group V element. The gas is diffused in parallel with the substrate and from upstream to downstream. The apparatus has the substrate housed in the apparatus and a flow channel for allowing the gas to flow in the flow channel. The apparatus also has a plurality of protrusions provided on an inner wall of the flow channel. A partition for causing the source gas of group III element and the source gas of group V element to be introduced separately into the flow channel is provided on the upstream portion of the flow channel and in a horizontal direction. The protrusions are formed on the upper and lower surfaces of the partition. With this structure, the source gas of group III element and the source gas of group V element are more uniformly mixed before the source gases are supplied.
摘要翻译：本发明涉及通过使含有III族元素的源气体和V族元素源气体的气体扩散而在衬底上晶体生长氮化物半导体来制造氮化物半导体的装置。气体与底物平行扩散，从上游到下游扩散。该装置具有容纳在装置中的基板和用于允许气体在流动通道中流动的流动通道。设备还具有设置在流动通道的内壁上的多个突起。在流路的上游部分和水平方向上设置用于将III族元素的源气体和V族元素的源气体分开引入流路的分隔。突起形成在隔板的上表面和下表面上。利用这种结构，在供应源气体之前，III族元素的源气体和V族元素的源气体更均匀地混合。

3. 发明申请

US20060065197A1 Vapor deposition apparatus 审中-公开
标题翻译：蒸镀装置
公开(公告)号：US20060065197A1
公开(公告)日：2006-03-30
申请号：US11235188
申请日：2005-09-27
申请人： Eiji Yamada , Takayuki Yuasa , Masahiro Araki , Nakao Akutsu
发明人： Eiji Yamada , Takayuki Yuasa , Masahiro Araki , Nakao Akutsu
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/54
摘要： A vapor deposition apparatus of the present invention has a substrate holder having a substrate holding surface for holding a substrate thereon, and a flow channel for supplying a source gas onto the substrate. The flow channel has an upper wall and a lower wall. An aperture portion is provided in the lower wall of the flow channel. The substrate holding surface of the substrate holder fits in the aperture portion while forming a space between the substrate holding surface and the aperture portion. A means for reducing leakage of gas through the space between the aperture portion and the substrate holder is provided. With this structure, since a means for reducing leakage of gas through the space between the aperture portion and the substrate holder is provided, the conductance with respect to outflow of gas increases, which in turn reduces variations in the amount of outflow gas. This results in high yield production of nitride semiconductor devices with a long life and high light-emission efficiency.
摘要翻译：本发明的蒸镀装置具有：基板保持具，具有用于保持基板的基板保持面，以及用于将源气体供给到基板上的流路。流动通道具有上壁和下壁。开口部设置在流路的下壁。在衬底保持表面和孔部之间形成空间的同时，衬底保持器的衬底保持表面装配在孔部分中。提供了一种用于减少气体通过开口部分和衬底保持器之间的空间的泄漏的装置。利用这种结构，由于提供了用于减少气体通过开口部和基板保持架之间的空气的泄漏的装置，所以相对于气体流出的电导性增加，从而减小流出气体量的变化。这导致具有长寿命和高发光效率的氮化物半导体器件的高产量生产。

4. 发明授权

US06190457B1 CVD system and CVD process 失效
标题翻译： CVD系统和CVD工艺
公开(公告)号：US06190457B1
公开(公告)日：2001-02-20
申请号：US08952517
申请日：1997-11-21
申请人： Takayuki Arai , Junichi Hidaka , Koh Matsumoto , Nakao Akutsu , Kazuhiro Aoyama , Yoshiaki Inaishi , Ichitaro Waki
发明人： Takayuki Arai , Junichi Hidaka , Koh Matsumoto , Nakao Akutsu , Kazuhiro Aoyama , Yoshiaki Inaishi , Ichitaro Waki
IPC分类号： C23C1600
CPC分类号： C23C16/45514 , C23C16/455 , C23C16/45591 , C30B25/02 , C30B25/14 , C30B29/40 , C30B29/403 , C30B29/406 , C30B29/42
摘要： Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11. The CVD system contains two separators 18, 19 disposed in the reactor 10 on the upstream side of the substrate mounting section to be parallel to the surface of the substrate 11 so as to define in the reactor three parallel layers of passages consisting of a first passage 20, a second passage 21 and a third passage 22; a first CVD gas introducing pipe 23 communicating to the first passage 20; a second CVD gas introducing pipe 24 communicating to the second passage 21; and a deposition accelerating gas introducing pipe 25 communicating to the third passage 22.
摘要翻译：提供一种可以生长具有最少缺陷并且具有高源气体利用效率和提高的生产率的两种或更多种组分的优异的化合物半导体薄膜的CVD系统和CVD方法。根据CVD系统和CVD工艺，将平行于放置在反应器10中的基板11的表面平行地引入至少两种源气体，以在基板的表面上生长两个或更多个部件的化合物半导体薄膜 CVD系统包含设置在反应器10中的两个分离器18,19，其位于衬底安装部分的上游侧，以平行于衬底11的表面，以便在反应器中限定三个平行的通道层，第一通道20，第二通道21和第三通道22; 与第一通道20连通的第一CVD气体导入管23; 与第二通道21连通的第二CVD气体导入管24; 以及与第三通路22连通的沉积加速气体导入管25。

5. 发明授权

US4764436A Iron-oxygen based perpendicular magnetized anisotropic thin film 失效
标题翻译：铁氧基垂直磁化各向异性薄膜
公开(公告)号：US4764436A
公开(公告)日：1988-08-16
申请号：US863909
申请日：1986-05-16
申请人： Nakao Akutsu , Masako Akimitsu , Tadashi Mizoguchi
发明人： Nakao Akutsu , Masako Akimitsu , Tadashi Mizoguchi
IPC分类号： G11B5/706 , H01F10/20 , H01F10/00 , H01F10/18
CPC分类号： H01F10/20 , G11B5/70678 , Y10S428/90
摘要： A thin film according to the present invention which is disclosed herein is an iron and oxygen based perpendicular magnetized anisotropic thin film useful as a magnetic recording material. This thin film has an excellent magnetic anisotropy in the perpendicular direction to the surface thereof and comprises iron (Fe)-oxygen(O) system, and tin (Sn) and/or germanium (Ge) or aluminum (Al) as a third element. The specified examples of such thin films include those having the composition represented by (I) Fe.sub.x O.sub.y M.sub.z wherein M represents Sn and/or Ge, and (II) Fe.sub.x O.sub.y Al.sub.z.The thin film has characteristics optimum as a uniform perpendicular magnetic recording medium, thus making it possible to provide a fine and high-density recording.
摘要翻译：本文公开的根据本发明的薄膜是用作磁记录材料的铁和氧基垂直磁化各向异性薄膜。该薄膜在与其表面垂直的方向上具有优异的磁各向异性，并且包括铁（Fe） - 氧（O）体系，以及作为第三元素的锡（Sn）和/或锗（Ge）或铝（Al）。这些薄膜的具体实例包括具有由（I）FexOyMz表示的组成的那些，其中M表示Sn和/或Ge，和（II）FexOyAlz。该薄膜具有作为均匀垂直磁记录介质的最佳特性，从而可以提供精细和高密度的记录。

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