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1. 发明申请

US20060057824A1 Apparatus for producing nitride semiconductor, method for producing nitride semiconductor, and semiconductor laser device obtained by the method 审中-公开
标题翻译：用于生产氮化物半导体的设备，用于生产氮化物半导体的方法以及通过该方法获得的半导体激光器件
公开(公告)号：US20060057824A1
公开(公告)日：2006-03-16
申请号：US11221951
申请日：2005-09-09
申请人： Masahiro Araki , Eiji Yamada , Takayuki Yuasa , Yuhzoh Tsuda , Nakao Akutsu
发明人： Masahiro Araki , Eiji Yamada , Takayuki Yuasa , Yuhzoh Tsuda , Nakao Akutsu
IPC分类号： C23C16/00 , H01L21/20
CPC分类号： C23C16/303 , B82Y20/00 , C23C16/45504 , C23C16/45563 , C23C16/45574 , C30B25/14 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01S5/0014 , H01S5/0202 , H01S5/34333 , H01S2304/04
摘要： The present invention relates to an apparatus for producing a nitride semiconductor by crystal-growing the nitride semiconductor on a substrate by diffusing a gas containing a source gas of group III element and a source gas of group V element. The gas is diffused in parallel with the substrate and from upstream to downstream. The apparatus has the substrate housed in the apparatus and a flow channel for allowing the gas to flow in the flow channel. The apparatus also has a plurality of protrusions provided on an inner wall of the flow channel. A partition for causing the source gas of group III element and the source gas of group V element to be introduced separately into the flow channel is provided on the upstream portion of the flow channel and in a horizontal direction. The protrusions are formed on the upper and lower surfaces of the partition. With this structure, the source gas of group III element and the source gas of group V element are more uniformly mixed before the source gases are supplied.
摘要翻译：本发明涉及通过使含有III族元素的源气体和V族元素源气体的气体扩散而在衬底上晶体生长氮化物半导体来制造氮化物半导体的装置。气体与底物平行扩散，从上游到下游扩散。该装置具有容纳在装置中的基板和用于允许气体在流动通道中流动的流动通道。设备还具有设置在流动通道的内壁上的多个突起。在流路的上游部分和水平方向上设置用于将III族元素的源气体和V族元素的源气体分开引入流路的分隔。突起形成在隔板的上表面和下表面上。利用这种结构，在供应源气体之前，III族元素的源气体和V族元素的源气体更均匀地混合。

2. 发明申请

US20060065197A1 Vapor deposition apparatus 审中-公开
标题翻译：蒸镀装置
公开(公告)号：US20060065197A1
公开(公告)日：2006-03-30
申请号：US11235188
申请日：2005-09-27
申请人： Eiji Yamada , Takayuki Yuasa , Masahiro Araki , Nakao Akutsu
发明人： Eiji Yamada , Takayuki Yuasa , Masahiro Araki , Nakao Akutsu
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/54
摘要： A vapor deposition apparatus of the present invention has a substrate holder having a substrate holding surface for holding a substrate thereon, and a flow channel for supplying a source gas onto the substrate. The flow channel has an upper wall and a lower wall. An aperture portion is provided in the lower wall of the flow channel. The substrate holding surface of the substrate holder fits in the aperture portion while forming a space between the substrate holding surface and the aperture portion. A means for reducing leakage of gas through the space between the aperture portion and the substrate holder is provided. With this structure, since a means for reducing leakage of gas through the space between the aperture portion and the substrate holder is provided, the conductance with respect to outflow of gas increases, which in turn reduces variations in the amount of outflow gas. This results in high yield production of nitride semiconductor devices with a long life and high light-emission efficiency.
摘要翻译：本发明的蒸镀装置具有：基板保持具，具有用于保持基板的基板保持面，以及用于将源气体供给到基板上的流路。流动通道具有上壁和下壁。开口部设置在流路的下壁。在衬底保持表面和孔部之间形成空间的同时，衬底保持器的衬底保持表面装配在孔部分中。提供了一种用于减少气体通过开口部分和衬底保持器之间的空间的泄漏的装置。利用这种结构，由于提供了用于减少气体通过开口部和基板保持架之间的空气的泄漏的装置，所以相对于气体流出的电导性增加，从而减小流出气体量的变化。这导致具有长寿命和高发光效率的氮化物半导体器件的高产量生产。

3. 发明授权

US06455877B1 III-N compound semiconductor device 有权
标题翻译： III-N族化合物半导体器件
公开(公告)号：US06455877B1
公开(公告)日：2002-09-24
申请号：US09657875
申请日：2000-09-08
申请人： Atsushi Ogawa , Takayuki Yuasa , Yoshihiro Ueta , Yuhzoh Tsuda , Masahiro Araki , Mototaka Taneya
发明人： Atsushi Ogawa , Takayuki Yuasa , Yoshihiro Ueta , Yuhzoh Tsuda , Masahiro Araki , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/025 , H01S5/0421 , H01S5/0425 , H01S5/32341
摘要： A GaN light-emitting device is provided having a low specific contact resistance of an n-type electrode as well as a low threshold voltage or threshold current density. The GaN light-emitting device has an electrode formed on a nitrogen-terminated surface of a GaN substrate. Specifically, the GaN light-emitting device includes the GaN substrate, a plurality of GaN compound semiconductor layers formed on the GaN substrate, and the n-type electrode and a p-type electrode, wherein the semiconductor substrate is of n-type and the n-type electrode is formed on the nitrogen-terminated surface of the semiconductor substrate. The concentration of n-type impurities in the substrate preferably ranges from 1×1017 cm−3 to 1×1021 cm−3. The substrate preferably includes at least a first portion forming the nitrogen-terminated surface and having a first concentration of n-type impurities and a second portion having a second concentration of n-type impurities lower than the first concentration of n-type impurities.
摘要翻译：提供具有n型电极的低比接触电阻以及低阈值电压或阈值电流密度的GaN发光器件。 GaN发光器件具有形成在GaN衬底的氮封端表面上的电极。具体地，GaN发光器件包括GaN衬底，形成在GaN衬底上的多个GaN化合物半导体层，以及n型电极和p型电极，其中半导体衬底为n型， n型电极形成在半导体衬底的氮封端表面上。衬底中n型杂质的浓度优选为1×10 17 cm -3至1×10 21 cm -3。基板优选至少包括形成氮封端表面并具有第一浓度的n型杂质的第一部分和具有比第一浓度的n型杂质低的n型杂质的第二浓度的第二部分。

4. 发明授权

US07663158B2 Nitride compound semiconductor light emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07663158B2
公开(公告)日：2010-02-16
申请号：US11941333
申请日：2007-11-16
申请人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
发明人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01S5/0207 , H01S5/2201 , H01S5/3054 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
摘要翻译：一种氮化物化合物半导体发光器件包括：具有晶体取向的GaN衬底，其倾斜远离<0001>方向等于或大于约0.05°并且等于或小于约2° 以及形成在所述GaN衬底上的半导体多层结构，其中所述半导体多层结构包括：含有氮化物半导体的受主掺杂层; 以及包括发光区域的有源层。

5. 发明授权

US06586777B1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US06586777B1
公开(公告)日：2003-07-01
申请号：US09641876
申请日：2000-08-18
申请人： Takayuki Yuasa , Atsushi Ogawa , Masahiro Araki , Yoshihiro Ueta , Yuhzoh Tsuda , Mototaka Taneya
发明人： Takayuki Yuasa , Atsushi Ogawa , Masahiro Araki , Yoshihiro Ueta , Yuhzoh Tsuda , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/325 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/32 , H01S5/0213 , H01S5/0218 , H01S5/305 , H01S5/34333 , H01S2304/00
摘要： The present nitride semiconductor light emitting device includes a nitride semiconductor thick film substrate and a light emitting layered structure including a plurality of nitride semiconductor layers stacked on the substrate. The nitride semiconductor substrate includes at least two layer regions including a first layer region of a high impurity concentration and a second layer region of an impurity concentration lower than the first layer region. The light emitting layered structure is formed on the first layer region of the substrate.
摘要翻译：本发明的氮化物半导体发光器件包括氮化物半导体厚膜衬底和包括堆叠在衬底上的多个氮化物半导体层的发光层状结构。氮化物半导体衬底包括至少两层包括高杂质浓度的第一层区域和杂质浓度低于第一层区域的第二层区域的层区域。发光层状结构形成在基板的第一层区域上。

6. 发明授权

US07352012B2 Nitride compound semiconductor light emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07352012B2
公开(公告)日：2008-04-01
申请号：US11409101
申请日：2006-04-20
申请人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
发明人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01S5/0207 , H01S5/2201 , H01S5/3054 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
摘要翻译：一种氮化物化合物半导体发光器件包括：具有晶体取向的GaN衬底，其倾斜远离<0001>方向等于或大于约0.05°并且等于或小于约2° 以及形成在所述GaN衬底上的半导体多层结构，其中所述半导体多层结构包括：含有氮化物半导体的受主掺杂层; 以及包括发光区域的有源层。

7. 发明申请

US20060189012A1 Nitride compound semiconductor light emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20060189012A1
公开(公告)日：2006-08-24
申请号：US11409101
申请日：2006-04-20
申请人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
发明人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01S5/0207 , H01S5/2201 , H01S5/3054 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
摘要翻译：一种氮化物化合物半导体发光器件包括：具有晶体取向的GaN衬底，其倾斜远离<0001>方向等于或大于约0.05°并且等于或小于约2° 以及形成在所述GaN衬底上的半导体层叠结构，其中所述半导体多层结构包括含有氮化物半导体的受主掺杂层; 以及包括发光区域的有源层。

8. 发明授权

US07064357B2 Nitride compound semiconductor light emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07064357B2
公开(公告)日：2006-06-20
申请号：US09759312
申请日：2001-01-12
申请人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
发明人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01S5/0207 , H01S5/2201 , H01S5/3054 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
摘要翻译：一种氮化物化合物半导体发光器件包括：具有晶体取向的GaN衬底，其倾斜远离<0001>方向等于或大于约0.05°并且等于或小于约2° 以及形成在所述GaN衬底上的半导体多层结构，其中所述半导体多层结构包括：含有氮化物半导体的受主掺杂层; 以及包括发光区域的有源层。

9. 发明申请

US20050141577A1 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US20050141577A1
公开(公告)日：2005-06-30
申请号：US10831659
申请日：2004-04-26
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01S5/00 , H01S5/02 , H01S5/22 , H01S5/32 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

10. 发明授权

US6017774A Method for producing group III-V compound semiconductor and fabricating light emitting device using such semiconductor 失效
标题翻译： III-V族化合物半导体的制造方法，使用这种半导体制造发光元件
公开(公告)号：US6017774A
公开(公告)日：2000-01-25
申请号：US774056
申请日：1996-12-23
申请人： Takayuki Yuasa , Kazuhiko Inoguchi
发明人： Takayuki Yuasa , Kazuhiko Inoguchi
IPC分类号： C30B25/02 , H01L21/205 , H01L33/00 , H01L21/20
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/02614 , H01L33/007
摘要： The present invention provides a method for producing a group III-V compound semiconductor including nitrogen as a group V element by an organometallic vapor phase growth method. An organometallic as a group III material, an amine type material or ammonia as a group V material and an organic compound which is decomposed by heating so as to generate radicals are used to perform crystal growth.
摘要翻译：本发明提供一种通过有机金属气相生长法制备包含氮作为V族元素的III-V族化合物半导体的方法。使用作为III族材料的有机金属化合物，作为V族材料的胺型材料或氨，通过加热分解以产生自由基的有机化合物进行晶体生长。

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