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1. 发明申请

US20150287613A1 BASAL PLANE DISLOCATION ELIMINATION IN 4H-SIC BY PULSED RAPID THERMAL ANNEALING 审中-公开
标题翻译： 4H-SIC通过脉冲快速热退火进行的基本平面分解消除
公开(公告)号：US20150287613A1
公开(公告)日：2015-10-08
申请号：US14679254
申请日：2015-04-06
申请人： Marko J. Tadjer , Boris N. Feigelson , Nadeemullah A. Mahadik , Robert E. Stahlbush , Eugene A. Imhoff , Jordan Greenlee
发明人： Marko J. Tadjer , Boris N. Feigelson , Nadeemullah A. Mahadik , Robert E. Stahlbush , Eugene A. Imhoff , Jordan Greenlee
IPC分类号： H01L21/324 , H01L29/16
CPC分类号： H01L21/3247 , H01L21/02529 , H01L21/02609 , H01L21/02667 , H01L21/324 , H01L29/1608
摘要： A method for removing existing basal plane dislocations (BPDs) from silicon carbide epilayers by using a pulsed rapid thermal annealing process where the BPDs in the epilayers were eliminated while preserving the epitaxial surface. This high temperature, high pressure method uses silicon carbide epitaxial layers with a carbon cap to protect the surface. These capped epilayers are subjected to a plurality of rapid heating and cooling cycles.
摘要翻译：通过使用脉冲快速热退火工艺从碳化硅外延层中去除现有基面位错（BPD）的方法，其中消除外延层中的BPD同时保留外延表面。这种高温高压法使用具有碳帽的碳化硅外延层来保护表面。这些加盖的外延层经受多个快速加热和冷却循环。

2. 发明授权

US09129799B2 Elimination of basal plane dislocations in post growth silicon carbide epitaxial layers by high temperature annealing while preserving surface morphology 有权
标题翻译：通过高温退火消除后生长碳化硅外延层中的基面位错，同时保持表面形态
公开(公告)号：US09129799B2
公开(公告)日：2015-09-08
申请号：US14498065
申请日：2014-09-26
申请人： Nadeemullah A. Mahadik , Robert E. Stahlbush , Marko J. Tadjer , Eugene A. Imhoff , Boris N. Feigelson
发明人： Nadeemullah A. Mahadik , Robert E. Stahlbush , Marko J. Tadjer , Eugene A. Imhoff , Boris N. Feigelson
IPC分类号： H01L21/02 , H01L21/04 , H01L29/16
CPC分类号： H01L21/02378 , C30B29/36 , C30B33/02 , H01L29/1608
摘要： A method to remove basal plane dislocations in post growth silicon carbide epitaxial layers by capping post growth silicon carbide epilayers with a graphite cap and annealing the capped silicon carbon epilayers at a temperature of 1750° C. or greater with a nitrogen overpressure of 60-110 psi, wherein basal plane dislocations in the epilayers are removed while surface morphology is preserved. Also disclosed is the related silicon carbide substrate material made by this method.
摘要翻译：通过用石墨盖封盖生长后的碳化硅外延层并在1750℃或更高的温度下，在60-110℃的氮气超压下对封盖的硅碳外延层进行退火，从而消除后生长碳化硅外延层中的基面位错的方法 psi，其中去除外延层中的基面位错，同时保留表面形态。还公开了通过该方法制造的相关碳化硅衬底材料。

3. 发明授权

US10403509B2 Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing 有权
公开(公告)号：US10403509B2
公开(公告)日：2019-09-03
申请号：US14679254
申请日：2015-04-06
申请人： Marko J. Tadjer , Boris N. Feigelson , Nadeemullah A. Mahadik , Robert E. Stahlbush , Eugene A. Imhoff , Jordan Greenlee
发明人： Marko J. Tadjer , Boris N. Feigelson , Nadeemullah A. Mahadik , Robert E. Stahlbush , Eugene A. Imhoff , Jordan Greenlee
IPC分类号： H01L29/15 , H01L21/324 , H01L29/16 , H01L21/02
摘要： A method for removing existing basal plane dislocations (BPDs) from silicon carbide epilayers by using a pulsed rapid thermal annealing process where the BPDs in the epilayers were eliminated while preserving the epitaxial surface. This high temperature, high pressure method uses silicon carbide epitaxial layers with a carbon cap to protect the surface. These capped epilayers are subjected to a plurality of rapid heating and cooling cycles.

4. 发明申请

US20150155166A1 ELIMINATION OF BASAL PLANE DISLOCATIONS IN POST GROWTH SILICON CARBIDE EPITAXIAL LAYERS BY HIGH TEMPERATURE ANNEALING WHILE PRESERVING SURFACE MORPHOLOGY 有权
标题翻译：在保存表面形态时，通过高温退火消除后生长碳化硅外延层中的基底平面分布
公开(公告)号：US20150155166A1
公开(公告)日：2015-06-04
申请号：US14498065
申请日：2014-09-26
申请人： Nadeemullah A. Mahadik , Robert E. Stahlbush , Marko J. Tadjer , Eugene A. Imhoff , Boris N. Feigelson
发明人： Nadeemullah A. Mahadik , Robert E. Stahlbush , Marko J. Tadjer , Eugene A. Imhoff , Boris N. Feigelson
IPC分类号： H01L21/02 , H01L29/16
CPC分类号： H01L21/02378 , C30B29/36 , C30B33/02 , H01L29/1608
摘要： A method to remove basal plane dislocations in post growth silicon carbide epitaxial layers by capping post growth silicon carbide epilayers with a graphite cap and annealing the capped silicon carbon epilayers at a temperature of 1750° C. or greater with a nitrogen overpressure of 60-110 psi, wherein basal plane dislocations in the epilayers are removed while surface morphology is preserved. Also disclosed is the related silicon carbide substrate material made by this method.
摘要翻译：通过用石墨盖封盖生长后的碳化硅外延层并在1750℃或更高的温度下，在60-110℃的氮气超压下对封盖的硅碳外延层进行退火，从而消除后生长碳化硅外延层中的基面位错的方法 psi，其中去除外延层中的基面位错，同时保留表面形态。还公开了通过该方法制造的相关碳化硅衬底材料。

5. 发明申请

US20150056763A1 SELECTIVE DEPOSITION OF DIAMOND IN THERMAL VIAS 有权
标题翻译：金刚石选择性沉积在六角洲
公开(公告)号：US20150056763A1
公开(公告)日：2015-02-26
申请号：US14464406
申请日：2014-08-20
申请人： Karl D. Hobart , Tatyana I. Feygelson , Eugene A. Imhoff , Travis J. Anderson , Joshua D. Caldwell , Andrew D. Koehler , Bradford B. Pate , Marko J. Tadjer , Randijer S. Sandhu , Vincent Gambin , Gregory Lewis , Ioulia Smorchkova , Mark Goorsky , Jeff McKay
发明人： Karl D. Hobart , Tatyana I. Feygelson , Eugene A. Imhoff , Travis J. Anderson , Joshua D. Caldwell , Andrew D. Koehler , Bradford B. Pate , Marko J. Tadjer , Randijer S. Sandhu , Vincent Gambin , Gregory Lewis , Ioulia Smorchkova , Mark Goorsky , Jeff McKay
IPC分类号： H01L29/66 , H01L23/373 , H01L21/768 , H01L21/3065 , H01L21/311 , H01L29/20 , H01L21/02
CPC分类号： H01L29/66462 , H01L21/02115 , H01L21/02164 , H01L21/0217 , H01L21/0254 , H01L21/3065 , H01L21/31122 , H01L21/76802 , H01L23/367 , H01L23/3677 , H01L23/3732 , H01L29/1602 , H01L29/2003 , H01L29/778 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor device, such as a GaN high electron mobility transistor (HEMT) device, including etching a thermal via into a back-side of a semiconductor substrate and depositing a diamond nucleation seed layer across the back-side of the substrate. The method further includes coating the diamond nucleation with a mask layer and removing mask material outside of the thermal via on the planar portions of the back-side of the substrate. The method includes removing portions of the diamond nucleation layer on the planar portions and then removing the remaining portion of the mask material in the thermal via. The method then includes depositing a bulk diamond layer within the thermal via on the remaining portion of the diamond nucleation layer so that diamond only grows in the thermal via and not on the planar portions of the substrate.
摘要翻译：一种用于制造诸如GaN高电子迁移率晶体管（HEMT）器件的半导体器件的方法，包括将热通孔蚀刻到半导体衬底的背面中并且沉积金刚石成核种子层跨越衬底的背面。该方法还包括用掩模层涂覆金刚石成核，并在衬底背面的平面部分上去除热通孔外部的掩模材料。该方法包括去除平面部分上的金刚石成核层的部分，然后去除热通孔中掩模材料的剩余部分。该方法然后包括在金刚石成核层的剩余部分上的热通孔内沉积体金刚石层，使得金刚石仅在基底的热通孔而不是平面部分上生长。

6. 发明授权

US07759186B2 Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices 有权
标题翻译：用于制造具有光敏掺杂剂掩模的连接终止延伸以控制高压电子器件的掺杂分布和横向宽度的方法
公开(公告)号：US07759186B2
公开(公告)日：2010-07-20
申请号：US12497721
申请日：2009-07-06
申请人： Eugene A. Imhoff , Francis J. Kub , Karl D. Hobart
发明人： Eugene A. Imhoff , Francis J. Kub , Karl D. Hobart
IPC分类号： H01L21/8238 , H01L21/336 , H01L21/265
CPC分类号： H01L29/0615 , H01L21/0274 , H01L21/0465 , H01L21/3085 , H01L29/1608 , H01L29/6606 , H01L29/8611 , H01L29/868
摘要： Methods for producing a junction termination extension surrounding the edge of a cathode or anode junction in a semiconductor substrate, where the junction termination extension has a controlled arbitrary lateral doping profile and a controlled arbitrary lateral width, are provided. A photosensitive material is illuminated through a photomask having a pattern of opaque and clear spaces therein, the photomask being separated from the photosensitive material so that the light diffuses before striking the photosensitive material. After processing, the photosensitive material so exposed produces a laterally tapered implant mask. Dopants are introduced into the semiconductor material and follow a shape of the laterally tapered implant mask to create a controlled arbitrary lateral doping profile and a controlled lateral width in the junction termination extension in the semiconductor.
摘要翻译：提供了围绕半导体衬底中的阴极或阳极结的边缘的连接终端延伸器的方法，其中结终端延伸部具有受控的任意横向掺杂分布和受控的任意横向宽度。感光材料通过其中具有不透明和透明空间的图案的光掩模照射，光掩模与感光材料分离，使得光在撞击感光材料之前漫射。在处理之后，如此暴露的感光材料产生横向渐变的植入物掩模。将掺杂剂引入半导体材料中并且遵循横向渐变的注入掩模的形状，以在半导体中的连接终端延伸部中产生受控的任意横向掺杂分布和受控横向宽度。

7. 发明授权

US08723218B2 Silicon carbide rectifier 有权
标题翻译：碳化硅整流器
公开(公告)号：US08723218B2
公开(公告)日：2014-05-13
申请号：US13605024
申请日：2012-09-06
申请人： Karl D. Hobart , Francis J. Kub , Mario Ancona , Eugene A. Imhoff
发明人： Karl D. Hobart , Francis J. Kub , Mario Ancona , Eugene A. Imhoff
IPC分类号： H01L29/74
CPC分类号： H01L29/1608 , H01L21/02365 , H01L29/0657 , H01L29/0692 , H01L29/2003 , H01L29/417 , H01L29/6606 , H01L29/66136 , H01L29/66143 , H01L29/8613 , H01L29/872
摘要： Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide a lower current at which the diode shifts from negative temperature coefficient to a positive temperature coefficient of forward voltage for mitigating thermal runaway.
摘要翻译：碳化硅PiN二极管通过有限的p型接触面积具有降低的温度系数交叉点，以限制n型漂移层中的空穴注入，以便提供二极管从负温度系数偏移到正温度系数的较低电流正向电压，用于减轻热失控。

8. 发明申请

US20130240905A1 Silicon Carbide Rectifier 有权
标题翻译：碳化硅整流器
公开(公告)号：US20130240905A1
公开(公告)日：2013-09-19
申请号：US13605024
申请日：2012-09-06
申请人： Karl D. Hobart , Francis J. Kub , Mario Ancona , Eugene A. Imhoff
发明人： Karl D. Hobart , Francis J. Kub , Mario Ancona , Eugene A. Imhoff
IPC分类号： H01L29/16 , H01L21/02 , H01L29/20
CPC分类号： H01L29/1608 , H01L21/02365 , H01L29/0657 , H01L29/0692 , H01L29/2003 , H01L29/417 , H01L29/6606 , H01L29/66136 , H01L29/66143 , H01L29/8613 , H01L29/872
摘要： Silicon carbide PiN diodes are presented with reduced temperature coefficient crossover points by limited p type contact area to limit hole injection in the n type drift layer in order to provide a lower current at which the diode shifts from negative temperature coefficient to a positive temperature coefficient of forward voltage for mitigating thermal runaway.
摘要翻译：碳化硅PiN二极管通过有限的p型接触面积具有降低的温度系数交叉点，以限制n型漂移层中的空穴注入，以便提供二极管从负温度系数偏移到正温度系数的较低电流正向电压，用于减轻热失控。

9. 发明申请

US20100055882A1 Junction Termination Extension with Controllable Doping Profile and Controllable Width for High-Voltage Electronic Devices 有权
标题翻译：具有可控掺杂曲线和高电压电子设备可控宽度的接线端接扩展
公开(公告)号：US20100055882A1
公开(公告)日：2010-03-04
申请号：US12497721
申请日：2009-07-06
申请人： Eugene A. Imhoff , Francis J. Kub , Karl D. Hobart
发明人： Eugene A. Imhoff , Francis J. Kub , Karl D. Hobart
IPC分类号： H01L21/20 , H01L21/265
CPC分类号： H01L29/0615 , H01L21/0274 , H01L21/0465 , H01L21/3085 , H01L29/1608 , H01L29/6606 , H01L29/8611 , H01L29/868
摘要： Methods for producing a junction termination extension surrounding the edge of a cathode or anode junction in a semiconductor substrate, where the junction termination extension has a controlled arbitrary lateral doping profile and a controlled arbitrary lateral width, are provided. A photosensitive material is illuminated through a photomask having a pattern of opaque and clear spaces therein, the photomask being separated from the photosensitive material so that the light diffuses before striking the photosensitive material. After processing, the photosensitive material so exposed produces a laterally tapered implant mask. Dopants are introduced into the semiconductor material and follow a shape of the laterally tapered implant mask to create a controlled arbitrary lateral doping profile and a controlled lateral width in the junction termination extension in the semiconductor.
摘要翻译：提供了围绕半导体衬底中的阴极或阳极结的边缘的连接终端延伸器的方法，其中结终端延伸部具有受控的任意横向掺杂分布和受控的任意横向宽度。感光材料通过其中具有不透明和透明空间的图案的光掩模照射，光掩模与感光材料分离，使得光在撞击感光材料之前漫射。在处理之后，如此暴露的感光材料产生横向渐变的植入物掩模。将掺杂剂引入半导体材料中并且遵循横向渐变的注入掩模的形状，以在半导体中的连接终端延伸部中产生受控的任意横向掺杂分布和受控横向宽度。

10. 发明授权

US5981975A On-chip alignment fiducials for surface emitting devices 失效
标题翻译：用于表面发射器件的片上对准基准
公开(公告)号：US5981975A
公开(公告)日：1999-11-09
申请号：US31586
申请日：1998-02-27
申请人： Eugene A. Imhoff
发明人： Eugene A. Imhoff
IPC分类号： G02B6/42 , H01S5/02 , H01S5/183 , H01L33/00
CPC分类号： G02B6/4224 , H01S5/02268
摘要： An optoelectronic apparatus has, a die having a mesa (103) with a surface emitting optical device and a metallized p-type contact (209), a planar pad (201) adjacent the mesa for Z-height registration with an optical bench, a first notch (206) having been provided by a first etch and having thereon a metallized n-type contact (208) that is coplanar with the p-type contact (209), a second notch having a side surface (204) having been provided by a second etch, the second notch to abut the optical bench along an x-axis, the first notch (206) extending to the second notch, and the die having side surfaces (207) to abut the optical bench along a y-axis, and the second notch extending to the side surfaces (207).
摘要翻译：一种光电子装置，具有具有表面发射光学装置的台面（103）和金属化p型接触（209）的管芯，与台面相邻的平面焊盘（201），用于与光学台架Z高度对准，已经通过第一蚀刻提供了第一凹口（206）并且在其上具有与p型接触件（209）共面的金属化的n型接触（208），具有已经提供的侧表面（204）的第二凹口通过第二蚀刻，所述第二凹口沿着x轴邻接所述光学平台，所述第一凹口（206）延伸到所述第二凹口，并且所述模具具有侧表面（207）以沿着y轴邻接所述光学平台，并且第二凹口延伸到侧表面（207）。

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