专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140287539A1 FILM FORMATION APPARATUS AND FILM FORMATION METHOD 有权
标题翻译：胶片形成装置和胶片形成方法
公开(公告)号：US20140287539A1
公开(公告)日：2014-09-25
申请号：US14219159
申请日：2014-03-19
申请人： DENSO CORPORATION , NUFLARE TECHNOLOGY, INC
发明人： Hideki ITO , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： H01L21/67 , H01L21/687 , H01L21/02
CPC分类号： H01L21/68785 , C23C16/4408 , C30B25/10 , C30B25/14 , C30B25/16 , H01L21/67109
摘要： At the time of transporting a substrate into or from a space where a film formation process is performed, the space where the film formation process is performed, a space where a lower heater 16 is provided, and a space where an upper heater 19 is provided are made in an inert gas atmosphere.
摘要翻译：在将基板输送到进行成膜处理的空间中或从进行成膜处理的空间运送成膜处理的空间，设置下加热器16的空间和设置上加热器19的空间在惰性气体气氛中制成。

2. 发明授权

US10896831B2 Film forming apparatus 有权
公开(公告)号：US10896831B2
公开(公告)日：2021-01-19
申请号：US16118734
申请日：2018-08-31
申请人： NUFLARE TECHNOLOGY, INC. , SHOWA DENKO K.K. , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Kunihiko Suzuki , Naohisa Ikeya , Keisuke Fukada , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Hiroaki Fujibayashi , Hideyuki Uehigashi , Masami Naito , Kazukuni Hara , Hirofumi Aoki , Takahiro Kozawa
IPC分类号： C23C16/40 , H01L21/67 , H01L21/205 , C23C16/455 , B01F3/02 , H01L21/02
摘要： A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

3. 发明授权

US10745824B2 Film forming apparatus 有权
公开(公告)号：US10745824B2
公开(公告)日：2020-08-18
申请号：US15813709
申请日：2017-11-15
申请人： NUFLARE TECHNOLOGY, INC.
发明人： Kunihiko Suzuki , Naohisa Ikeya , Masayoshi Yajima , Kazukuni Hara , Hiroaki Fujibayashi , Hideki Matsuura , Katsumi Suzuki
IPC分类号： C23C16/40 , C30B25/10 , C23C16/46 , C30B25/14 , C23C16/52 , C23C16/455 , C30B25/16 , C30B29/36 , C23C16/44
摘要： A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.

4. 发明授权

US10584417B2 Film forming apparatus, susceptor, and film forming method 有权
公开(公告)号：US10584417B2
公开(公告)日：2020-03-10
申请号：US14796172
申请日：2015-07-10
申请人： NuFlare Technology, Inc.
发明人： Hideki Ito , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Katsumi Suzuki , Koichi Nishikawa
IPC分类号： C30B25/12 , C30B29/36 , C30B25/08 , C23C16/46 , C23C16/458
摘要： A film forming apparatus according to an embodiment of the invention includes: a film forming chamber configured to form a film on a substrate; a susceptor configured to place the substrate thereon; a rotating part configured to rotate the susceptor; a heater configured to heat the substrate; and a gas supplier configured to supply process gases into the film forming chamber, wherein the susceptor includes: a ring-shaped outer circumferential susceptor supported by the rotating part; a holder provided at an inner circumferential portion of the outer circumferential susceptor, the holder configured to hold the substrate; a ring-shaped plate provided over the outer circumferential susceptor; and a cover member configured to cover a top surface and an outer circumferential surface of the plate and an outer circumferential surface of the outer circumferential susceptor.

5. 发明申请

US20180374721A1 FILM FORMING APPARTUS 审中-公开
公开(公告)号：US20180374721A1
公开(公告)日：2018-12-27
申请号：US16118734
申请日：2018-08-31
申请人： NUFLARE TECHNOLOGY, INC. , SHOWA DENKO K.K. , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
发明人： Kunihiko Suzuki , Naohisa Ikeya , Keisuke Fukada , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Hiroaki Fujibayashi , Hideyuki Uehigashi , Masami Naito , Kazukuni Hara , Hirofumi Aoki , Takahiro Kozawa
IPC分类号： H01L21/67 , H01L21/205 , C23C16/455
摘要： A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.

6. 发明授权

US09570337B2 Film formation apparatus and film formation method 有权
标题翻译：成膜装置及成膜方法
公开(公告)号：US09570337B2
公开(公告)日：2017-02-14
申请号：US14219159
申请日：2014-03-19
申请人： NUFLARE TECHNOLOGY, INC , DENSO CORPORATION
发明人： Hideki Ito , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： H01L21/67 , H01L21/687 , C23C16/44 , C30B25/10 , C30B25/14 , C30B25/16
CPC分类号： H01L21/68785 , C23C16/4408 , C30B25/10 , C30B25/14 , C30B25/16 , H01L21/67109
摘要： At the time of transporting a substrate into or from a space where a film formation process is performed, the space where the film formation process is performed, a space where a lower heater 16 is provided, and a space where an upper heater 19 is provided are made in an inert gas atmosphere.
摘要翻译：在将基板输送到进行成膜处理的空间中或从进行成膜处理的空间运送成膜处理的空间，设置下加热器16的空间和设置上加热器19的空间在惰性气体气氛中制成。

7. 发明申请

US20160024652A1 FILM FORMING APPARATUS, SUSCEPTOR, AND FILM FORMING METHOD 审中-公开
标题翻译：胶片成型装置，SUSCEPTOR和薄膜成型方法
公开(公告)号：US20160024652A1
公开(公告)日：2016-01-28
申请号：US14796172
申请日：2015-07-10
申请人： NuFlare Technology, Inc.
发明人： Hideki Ito , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Katsumi Suzuki , Koichi Nishikawa
IPC分类号： C23C16/458 , C23C16/32 , C23C16/46
摘要： A film forming apparatus according to an embodiment of the invention includes: a film forming chamber configured to form a film on a substrate; a susceptor configured to place the substrate thereon; a rotating part configured to rotate the susceptor; a heater configured to heat the substrate; and a gas supplier configured to supply process gases into the film forming chamber, wherein the susceptor includes: a ring-shaped outer circumferential susceptor supported by the rotating part; a holder provided at an inner circumferential portion of the outer circumferential susceptor, the holder configured to hold the substrate; a ring-shaped plate provided over the outer circumferential susceptor; and a cover member configured to cover a top surface and an outer circumferential surface of the plate and an outer circumferential surface of the outer circumferential susceptor.
摘要翻译：根据本发明实施例的成膜装置包括：成膜室，被配置为在基板上形成膜; 被配置为将所述基板放置在其上的基座; 旋转部，被构造成旋转所述基座; 被配置为加热所述基板的加热器; 以及气体供给装置，其构造成将处理气体供给到所述成膜室中，其中所述基座包括：由所述旋转部支撑的环状外周基座; 设置在所述外周基座的内周部的保持器，所述保持器构造成保持所述基板; 设置在外周基座上的环状板; 以及盖构件，其被构造成覆盖所述板的顶表面和外周表面以及所述外周基座的外周表面。

8. 发明授权

US09879359B2 Silicon carbide semiconductor film-forming apparatus and film-forming method using the same 有权
公开(公告)号：US09879359B2
公开(公告)日：2018-01-30
申请号：US14899273
申请日：2014-06-19
申请人： DENSO CORPORATION , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY , NuFlare Technology, Inc. , TOYOTA JIDOSHA KABUSHIKI KAISHA
发明人： Hiroaki Fujibayashi , Masami Naito , Masahiko Ito , Isaho Kamata , Hidekazu Tsuchida , Hideki Ito , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C30B23/06 , C30B25/14 , C30B29/36 , C30B25/16 , H01L21/02 , C23C16/32 , C23C16/455 , C23C16/458
CPC分类号： C30B25/14 , C23C16/325 , C23C16/45519 , C23C16/45548 , C23C16/45553 , C23C16/45574 , C23C16/45587 , C23C16/4584 , C23C16/4586 , C30B25/165 , C30B29/36 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/02598 , H01L21/0262
摘要： In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.

9. 发明授权

US09873941B2 Film-forming manufacturing apparatus and method 有权
公开(公告)号：US09873941B2
公开(公告)日：2018-01-23
申请号：US14812130
申请日：2015-07-29
申请人： NuFlare Technology, Inc. , Toyota Jidosha Kabushiki Kaisha
发明人： Hideki Ito , Toshiro Tsumori , Kunihiko Suzuki , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Masami Naito , Hiroaki Fujibayashi , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C23C16/32 , C23C16/455 , C23C16/458 , C23C16/46 , C30B25/10
CPC分类号： C23C16/325 , C23C16/455 , C23C16/45519 , C23C16/45557 , C23C16/458 , C23C16/46 , C30B25/10
摘要： It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.

10. 发明授权

US09518322B2 Film formation apparatus and film formation method 有权
标题翻译：成膜装置及成膜方法
公开(公告)号：US09518322B2
公开(公告)日：2016-12-13
申请号：US14473157
申请日：2014-08-29
申请人： NUFLARE TECHNOLOGY, INC.
发明人： Hideki Ito , Kunihiko Suzuki , Hidekazu Tsuchida , Isaho Kamata , Masahiko Ito , Hiroaki Fujibayashi , Masami Naito , Ayumu Adachi , Koichi Nishikawa
IPC分类号： C23C16/46 , C23C16/458 , C23C16/455 , C23C16/32 , C30B25/10 , C30B25/14 , C30B29/36
CPC分类号： C23C16/466 , C23C16/325 , C23C16/45519 , C23C16/45565 , C23C16/4586 , C30B25/10 , C30B25/14 , C30B29/36
摘要： A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.
摘要翻译：根据实施例的成膜装置包括：成膜室，其在基板上进行成膜; 设置在成膜室的侧壁内部的圆筒形衬套; 处理气体供给单元，其设置在成膜室的顶部，并且具有将处理气体供给到所述衬里内部的第一气体喷出孔; 设置在成膜室内的衬套外侧的第一加热器，并从上方加热基板; 第二加热器从下方加热基板; 以及保护气体供给单元，其具有多个第二气体喷射孔，该保护气体喷射孔比所述第一气体喷射孔的位置向保护气体提供更靠近所述成膜室侧壁的位置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式