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1. 发明申请

US20020056342A1 Apparatus and method for generating indium ion beam 失效
公开(公告)号：US20020056342A1
公开(公告)日：2002-05-16
申请号：US09986624
申请日：2001-11-09
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Takatoshi Yamashita
IPC分类号： C22B004/08
CPC分类号： C22B58/00 , C22B4/005 , C22B4/08 , C23C14/221 , C23C14/243
摘要： An ion source 2 has a heating furnace 4 for annealing a solid material 6 to generate a steam 8 and a plasma generator 16 for ionizing the steam 8 to generate a plasma 24. The ion source 2 is for generating ion beam. An indium trifluoride is used as said solid material which has been once heated at temperature in the range of 600null C. to lower than 1170null C., thereby enabling to generate the indium ion beam in a stable amount. For the solid material 6, In(OF)xF3-x (x is 1, 2 or 3) may be used.

2. 发明申请

US20010017353A1 Ion source and operation method thereof 失效
标题翻译：离子源及其操作方法
公开(公告)号：US20010017353A1
公开(公告)日：2001-08-30
申请号：US09773664
申请日：2001-02-02
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Takatoshi Yamashita
IPC分类号： H01J027/00
CPC分类号： H01J27/08
摘要： This ion source is set up to satisfy a relation L
摘要翻译：该离子源被设置为满足关系<段落lvl =“0”> L <3.37B-1 {平方根（VA）x10-6 其中在等离子体生成容器2和灯丝8之间施加的电弧电压为VA [V]，等离子体生成容器2内的磁场19的磁通密度为B [T]，与最频繁电子几乎位于灯丝8的尖端中心到等离子体生产容器2的壁面的发射点9为L [m]。

3. 发明申请

US20030173914A1 Electrostatic accelerator and ion implanting apparatus with the same 有权
标题翻译：静电加速器和离子注入装置相同
公开(公告)号：US20030173914A1
公开(公告)日：2003-09-18
申请号：US10357398
申请日：2003-02-04
申请人： NISSIN ELECTRIC CO., LTD
发明人： Takatoshi Yamashita
IPC分类号： H01J023/00
CPC分类号： H01J37/3171 , H01J2237/04735
摘要： This electrostatic acceleration column has first to fifth electrodes arranged in a traveling direction of ions, which are a kind of charged particles. Then, the second electrode divided into two electrode members, which are opposed to each other across a path of the ions, and to which different electric potentials are applied to deflect the ions. Further, the electrodes arranged on a downstream side from the electrode are arranged along an orbit of ions deflected by the electrode and having specific energy.
摘要翻译：该静电加速柱具有沿着作为一种带电粒子的离子的行进方向排列的第一至第五电极。然后，第二电极被分成两个电极构件，两个电极构件彼此跨越离子的路径并且施加不同的电位以使离子偏转。此外，布置在电极的下游侧的电极沿着由电极偏转并具有比能量的离子的轨道布置。

4. 发明申请

US20020029746A1 Operation method of ion source and ion beam irradiation apparatus 有权
标题翻译：离子源和离子束照射装置的操作方法
公开(公告)号：US20020029746A1
公开(公告)日：2002-03-14
申请号：US09847404
申请日：2001-05-03
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Takatoshi Yamashita
IPC分类号： C23C016/00
CPC分类号： H01J37/08 , H01J27/04 , H01J2237/31701
摘要： This ion source 2 has the heating furnace 4 for heating a solid material 6 to produce a vapor 8, the plasma production vessel 16 for producing a plasma 24 by ionizing this vapor 8, and the vapor conduit tube 10 connecting both the heating furnace 4 and the plasma production vessel 16. In this ion source 2, using indium fluoride 6a as the solid material 6, an ion beam 30 containing indium ions is led out, while the temperature of the heating furnace 4 is kept in a range from 450null to 1170null C., and below the temperature of the plasma production vessel 16.
摘要翻译：该离子源2具有用于加热固体材料6以产生蒸汽8的加热炉4，用于通过使该蒸汽8离子来产生等离子体24的等离子体生产容器16和连接加热炉4和在该离子源2中，使用氟化铟6a作为固体材料6，引出含有铟离子的离子束30，而加热炉4的温度保持在450〜 1170℃，低于等离子体生产容器16的温度。

5. 发明申请

US20030164287A1 Particle implantation apparatus and particle implantation method 失效
标题翻译：粒子植入装置和粒子植入法
公开(公告)号：US20030164287A1
公开(公告)日：2003-09-04
申请号：US10375072
申请日：2003-02-28
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Takatoshi Yamashita
IPC分类号： C23C014/32
CPC分类号： C23C14/48 , C23C14/46 , H01J37/3171 , H01J2237/3146
摘要： The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider in the X direction onto the target so as to generate sputter particles. The target scanning mechanism mechanically scans the target in the Y direction crossing the X direction in reciprocating manner at a fixed angle with respect to the ion beam. The slit plate is used for passing sputter particles generated from the target and has a long slit extending in the X direction. The holder holds a substrate at the position where sputter particles having passed through the slit are incident. The holder scanning mechanism mechanically scans the holder in the Z direction crossing both the X and Y directions in reciprocating manner.
摘要翻译：粒子注入装置包括靶，离子束源，目标扫描机构，狭缝板，保持器和保持器扫描机构。靶用于溅射。离子束源将离子束明显地像在X方向上更宽的片材施加到靶上，以产生溅射粒子。目标扫描机构以与离子束成一定角度往复运动的方式，以与X方向交叉的Y方向机械地扫描目标物。狭缝板用于使从靶产生的溅射粒子通过，并具有在X方向上延伸的长狭缝。保持器在穿过狭缝的溅射颗粒入射的位置处保持基板。支架扫描机构以Z轴方向机械地扫描夹持器，并以往复方式与X方向和Y方向交叉。

6. 发明申请

US20030094902A1 Ion source 失效
标题翻译：离子源
公开(公告)号：US20030094902A1
公开(公告)日：2003-05-22
申请号：US10294813
申请日：2002-11-15
申请人： NISSIN ELECTRIC CO., LTD.
发明人： Takatoshi Yamashita
IPC分类号： H01J007/24
CPC分类号： H01J27/14
摘要： An ion source called as a Bernas-type ion source is additionally provided with a positive electrode and a bias power source. The positive electrode is provided in a plasma production chamber and is electrically isolated therefrom. The positive electrode has three openings at least at both sides of a X direction along a magnetic field produced in a magnetic field generator and at a side of an ion extraction opening (a side of ion beam extraction direction). The bias power source applies a positive bias voltage to the positive electrode and to the plasma production chamber. With combination of constituent elements, the positive electrode serves to push back the ion in the plasma and further functions to suck a secondary electron in the plasma, thereby increase the rate of the multiply charged ion in the plasma.
摘要翻译：称为伯纳斯型离子源的离子源另外设置有正电极和偏置电源。正电极设置在等离子体生产室中并与其电隔离。正极在磁场发生器中产生的磁场和离子提取开口侧（离子束取出方向的一侧）至少在X方向的两侧具有三个开口。偏置电源对正电极和等离子体产生室施加正偏置电压。通过构成元件的组合，正极用于推回等离子体中的离子，并且进一步起作用以吸收等离子体中的二次电子，从而增加等离子体中的多电荷离子的速率。

7. 发明申请

US20030030013A1 Apparatus for implanting an ion on a target and method for the same 有权
标题翻译：用于在靶上植入离子的装置及其方法
公开(公告)号：US20030030013A1
公开(公告)日：2003-02-13
申请号：US10214567
申请日：2002-08-09
申请人： Nissin Electric Co., Ltd.
发明人： Takatoshi Yamashita
IPC分类号： H01J037/317
CPC分类号： C23C14/48 , H01J37/3171
摘要： Anion implantation apparatus includes an ion source for extracting ions therefrom at an extraction voltage, an acceleration pipe for accelerating the ions thus extracted at an acceleration voltage of VA and a momentum segregation magnet for selecting the ions having a specific momentum from the ions extracted from the acceleration pipe so that the desired ions are caused to be incident on a target. Assuming that MI denotes the mass number of the desired ions, ZI denotes the valence thereof, Mc denotes the mass number of noted impurity ions of the impurity ions generated an upstream side of the acceleration pipe, and ZC denotes the valence thereof, if the relationship that the value of MInull(VEnullVA)/ZI and that of MCnullVA/ZC are equal or approximately equal to each other is satisfied, one of the extraction voltage VE and the acceleration voltage VA is increased and the other thereof is decreased while the value of (VEnullVA) is maintained substantially constant.
摘要翻译：阴离子注入装置包括用于以提取电压从其中提取离子的离子源，用于加速以VA的加速电压提取的离子的加速管和用于从从所述离子提取离子中提取的离子选择具有特定动量的离子的动量偏析磁体加速管，使得期望的离子入射到靶上。假设MI表示所需离子的质量数，Z 1表示其价数，Mc表示在加速管的上游侧产生的杂质离子的所注意杂质离子的质量数，ZC表示其价数，满足MI（VE + VA）/ ZI和MC.VA / ZC的值彼此相等或近似相等的值，提取电压VE和加速电压VA之一增加，另一个为（VE + VA）的值保持基本恒定。

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