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1. 发明申请

US20170097568A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING NOVOLAC RESIN TO WHICH AROMATIC VINYL COMPOUND IS ADDED 审中-公开
公开(公告)号：US20170097568A1
公开(公告)日：2017-04-06
申请号：US15127889
申请日：2015-03-17
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Takafumi ENDO , Keisuke HASHIMOTO , Hirokazu NISHIMAKI , Rikimaru SAKAMOTO
IPC分类号： G03F7/11 , G03F7/16 , H01L21/033 , G03F7/32 , H01L21/027 , C09D161/34 , G03F7/20
CPC分类号： G03F7/11 , C08G14/02 , C09D161/34 , G03F7/091 , G03F7/094 , G03F7/16 , G03F7/20 , G03F7/32 , H01L21/0276 , H01L21/0332 , H01L21/0337
摘要： A resist underlayer film-forming composition has high solubility in a solvent used at a lithography process for exhibiting good coating film forming properties and able to decrease a sublime generated during formation of a film. A resist underlayer film-forming composition having a novolac resin having a structure group (C) obtained by a reaction of an aromatic ring structure of an aromatic ring-containing compound (A) with a vinyl group of an aromatic vinyl compound (B). The aromatic vinyl compound (B) is represented by Formula (1), and is specifically styrene, 2-vinylnaphthalene, 4-tert-butylstyrene, or 4-tert-butoxystyrene. The structure group (C) is represented by Formula (2). The aromatic ring-containing compound (A) is an aromatic amine compound or a phenolic hydroxy group-containing compound. The novolac resin is a resin produced by a reaction of the aromatic amine compound or the phenolic hydroxy group-containing compound with aldehyde or ketone.

2. 发明申请

US20170045818A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYMER HAVING BLOCKED ISOCYANATE STRUCTURE 审中-公开
标题翻译：含有嵌段异氰酸酯结构的聚合物层析薄膜成膜组合物
公开(公告)号：US20170045818A1
公开(公告)日：2017-02-16
申请号：US15303979
申请日：2015-05-11
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Ryo KARASAWA , Tokio NISHITA , Yasunobu SOMEYA , Takafumi ENDO , Rikimaru SAKAMOTO
IPC分类号： G03F7/09 , C08F20/36 , C09D133/26 , H01L21/308 , G03F7/16 , G03F7/20 , G03F7/26 , C08F20/58 , C09D133/14
CPC分类号： G03F7/094 , C08F20/36 , C08F20/58 , C09D133/14 , C09D133/26 , G03F7/162 , G03F7/168 , G03F7/2002 , G03F7/2037 , G03F7/26 , H01L21/0271 , H01L21/0332 , H01L21/3081 , H01L21/3086
摘要： A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film.
摘要翻译： [问题]提供一种用于形成抗蚀剂下层膜的抗蚀剂下层膜形成用组合物，可以从上层转印图案，其可以在基板的加工过程中进行干蚀刻，并且可以使用碱处理后的碱性水溶液。 [解决方案]含有具有丙烯酰胺结构或丙烯酸酯结构的聚合物（A），具有封端异氰酸酯结构的聚合物（B）和溶剂（C））的用于光刻的抗蚀剂下层膜成膜组合物。聚合物（A）含有式（1）所示的单元结构。聚合物（B）含有由式（2）表示的单元结构。一种半导体器件的制造方法，包括：形成抗蚀剂图案的步骤; 使用抗蚀剂图案来蚀刻无机硬掩模层的步骤; 使用图案化的无机硬掩模层蚀刻抗蚀剂下层膜的步骤; 以及使用图案化的抗蚀剂下层膜来处理半导体衬底的步骤。

3. 发明申请

US20150378260A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ARYL SULFONATE SALT HAVING HYDROXYL GROUP 有权
标题翻译：含有含有羟基的亚磺酸盐的耐下层膜成膜组合物
公开(公告)号：US20150378260A1
公开(公告)日：2015-12-31
申请号：US14767404
申请日：2014-02-21
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Takafumi ENDO , Keisuke HASHIMOTO , Hirokazu NISHIMAKI , Rikimaru SAKAMOTO
IPC分类号： G03F7/11 , H01L21/311 , H01L21/308 , H01L21/027
CPC分类号： G03F7/11 , G03F7/091 , G03F7/094 , H01L21/0274 , H01L21/0277 , H01L21/3081 , H01L21/3086 , H01L21/31133
摘要： There is provided a resist underlayer film-forming composition to reduce the amount of sublimate generated from the resist underlayer film at baking process and to suppress aging and have high storage stability. A resist underlayer film-forming composition including an aryl sulfonic acid salt compound having a hydroxy group of Formula (1): (where Ar is a benzene ring or an aromatic hydrocarbon ring wherein benzene rings are condensed; m1 is an integer of 0 to (2+2n), m2 and m3 each is an integer of 1 to (3+2n), and (m1+m2+m3) is an integer of 2 to (4+2n), with the proviso that n is the number of the benzene rings or condensed benzene rings in the aromatic hydrocarbon ring and is an integer of 1 to 6; X+ is NH4+, a primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, quaternary ammonium ion, sulfonium ion, or an iodonium cation).
摘要翻译：提供了一种抗蚀剂下层膜形成组合物，用于减少在烘烤过程中由抗蚀剂下层膜产生的升华量并抑制老化并具有高储存稳定性。含有具有式（1）的羟基的芳基磺酸盐化合物的抗蚀剂下层膜形成组合物：其中Ar是苯环稠合的苯环或芳香烃环，m1为0〜（ 2 + 2n），m2和m3分别为1〜（3 + 2n）的整数，（m1 + m2 + m3）为2〜（4 + 2n）的整数，条件是n为芳香烃环中的苯环或稠合苯环，为1〜6的整数; X +为NH 4 +，一次铵离子，仲铵离子，叔铵离子，季铵离子，锍离子或碘鎓阳离子）。

4. 发明申请

US20160147151A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTANING PYRROLE NOVOLAC RESIN 审中-公开
标题翻译：耐腐蚀膜形成组合物与紫罗兰NOVOLAC树脂
公开(公告)号：US20160147151A1
公开(公告)日：2016-05-26
申请号：US14900406
申请日：2014-06-23
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Tetsuya SHINJO , Yasunobu SOMEYA , Ryo KARASAWA , Hirokazu NISHIMAKI , Takafumi ENDO , Keisuke HASHIMOTO
IPC分类号： G03F7/11 , C08G12/26 , H01L21/308 , G03F7/20 , G03F7/32 , H01L21/02 , C09D161/26 , G03F7/16
CPC分类号： G03F7/11 , C08G12/26 , C08G16/0268 , C09D161/00 , C09D161/26 , C09D179/04 , G03F7/091 , G03F7/16 , G03F7/20 , G03F7/32 , H01L21/02271 , H01L21/0276 , H01L21/0332 , H01L21/3081
摘要： An excellent resist underlayer film having a selectivity of dry etching rate close to that of a resist, selectivity of dry etching rate lower than that of a resist, or selectivity of dry etching rate lower than that of semiconductor substrate. Resist underlayer film-forming composition including a polymer containing unit structure of Formula (1): (where R3 is hydrogen atom, or C6-40 aryl group or heterocyclic group optionally substituted with halogen group, nitro group, amino group, carbonyl group, C6-40 aryl group, or hydroxy group; R4 is a hydrogen atom, or C1-10 alkyl group, C6-40 aryl group, or heterocyclic group optionally substituted with halogen group, nitro group, amino group, or hydroxy group; R3 and R4 optionally form ring together with carbon atoms bonded thereto; and n is an integer of 0 to 2).
摘要翻译：具有接近抗蚀剂的干蚀刻速率的选择性，干蚀刻速率选择性低于抗蚀剂的选择性或干蚀刻速率选择性低于半导体衬底的优异的抗蚀剂下层膜。抗氧化物下层膜形成组合物，其包含含有式（1）的单元结构的聚合物：（其中，R3是氢原子或C6-40芳基或任选被卤素基团，硝基，氨基，羰基，C6 -40芳基或羟基; R4是氢原子或C1-10烷基，C6-40芳基或任选被卤素基，硝基，氨基或羟基取代的杂环基; R3和R4 任选地与与其键合的碳原子一起形成环; n是0至2的整数）。

5. 发明申请

US20160068709A1 NOVOLAC RESIN-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION USING BISPHENOL ALDEHYDE 有权
标题翻译： NOVOLAC树脂含有电阻膜的成膜组合物使用双酚A醛
公开(公告)号：US20160068709A1
公开(公告)日：2016-03-10
申请号：US14786044
申请日：2014-05-08
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Takafumi ENDO , Keisuke HASHIMOTO , Hirokazu NISHIMAKI , Rikimaru SAKAMOTO
IPC分类号： C09D179/02 , H01L21/311
CPC分类号： C09D179/02 , C08G73/06 , C09D161/12 , C09D179/04 , G03F7/091 , G03F7/094 , H01L21/31138 , H01L21/31144
摘要： Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): The obtained resin may have a unit structure of Formula (2): Ar1 and Ar2 each are C6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent.Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.
摘要翻译：用于形成抗蚀剂下层膜的抗蚀剂下层膜形成组合物具有高耐干蚀刻性，抗翘曲性，并且对于不均匀部分具有良好的扁平性和包埋性，包括通过使包含芳族环的有机化合物A和具有至少两个芳族化合物的醛B反应而获得的树脂具有酚羟基的烃环基并且具有通过叔碳原子键合芳族烃环基的结构。醛B可以是式（1）的化合物：所得树脂可以具有式（2）的单元结构：Ar1和Ar2各自为C 6-40芳基。包括芳族环的有机化合物A可以是芳族胺或含有酚羟基的化合物。组合物可以含有其它溶剂，酸和/或酸发生剂或交联剂。形成用于半导体生产的抗蚀剂图案，包括通过将抗蚀剂下层膜形成组合物涂覆在半导体衬底上并烘烤来形成抗蚀剂下层膜。

6. 发明申请

US20180314154A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING LONG CHAIN ALKYL GROUP-CONTAINING NOVOLAC 审中-公开
公开(公告)号：US20180314154A1
公开(公告)日：2018-11-01
申请号：US15769525
申请日：2016-10-14
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Daigo SAITO , Takafumi ENDO , Ryo KARASAWA , Rikimaru SAKAMOTO
IPC分类号： G03F7/11 , C08G12/08 , C09D161/22 , G03F7/16 , H01L21/027 , G03F7/09 , G03F7/20 , C08G8/10 , C09D161/06 , H01L21/308
CPC分类号： C08G8/10 , C08G12/08 , G03F7/11 , G03F7/26
摘要： A resist underlayer film-forming composition comprising a novolac resin obtained by reacting an aromatic compound (A) with an aldehyde (B) having formyl group bonded to a secondary carbon atom or tertiary carbon atom of a C2-26 alkyl group. A resist underlayer film-forming composition according to the first aspect, in which the novolac resin comprises a unit structure of Formula (1): (in Formula (1), A is a bivalence group derived from a C6-40 aromatic compound; b1 is a C1-16 alkyl group; and b2 is a hydrogen atom or a C1-9 alkyl group). A is the bivalent group derived from an aromatic compound comprising an amino group, a hydroxy group, or both an amino group and a hydroxy group.

7. 发明申请

US20180181001A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION COMPRISING EPOXY ADDUCT HAVING LONG-CHAIN ALKYL GROUP 审中-公开
公开(公告)号：US20180181001A1
公开(公告)日：2018-06-28
申请号：US15736262
申请日：2016-06-20
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Takafumi ENDO , Daigo SAITO , Ryo KARASAWA , Rikimaru SAKAMOTO
IPC分类号： G03F7/11 , C09D163/00 , C09D5/00 , G03F7/004 , H01L21/308 , G03F7/16 , G03F7/20 , G03F7/26
CPC分类号： G03F7/11 , C08G59/182 , C08G59/184 , C08G59/186 , C09D5/006 , C09D163/00 , G03F7/0045 , G03F7/091 , G03F7/094 , G03F7/16 , G03F7/2002 , G03F7/2037 , G03F7/26 , H01L21/3081 , H01L21/3086
摘要： A resist underlayer film-forming composition in which a coating film having high flattening properties is formed on a substrate. A resist underlayer film-forming composition including an epoxy adduct (C) obtained by reacting an epoxy group-containing compound (A) with an epoxy adduct-forming compound (B), wherein one or both of the epoxy group-containing compound (A) and the epoxy adduct-forming compound (B) contain an optionally branched alkyl group having a carbon atom number of three or more. The epoxy adduct-forming compound (B) is at least one compound selected from the group consisting of carboxylic acid (B1), carboxylic anhydride (B2), a phenol compound (B3), a hydroxyl group-containing compound (B4), a thiol compound (B5), an amino compound (B6), and an imide compound (B7). The optionally branched alkyl group having a carbon atom number of three or more is contained in the epoxy adduct-forming compound (B). The optionally branched alkyl group has a C3-19 alkyl group.

8. 发明申请

US20170205711A1 COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION 审中-公开
公开(公告)号：US20170205711A1
公开(公告)日：2017-07-20
申请号：US15324542
申请日：2015-07-23
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Noriaki FUJITANI , Takafumi ENDO , Rikimaru SAKAMOTO
IPC分类号： G03F7/11 , G03F7/16 , G03F7/38 , G03F7/32 , H01L21/027 , G03F7/038 , G03F7/039 , C09D161/06 , C09D125/16 , G03F7/20 , G03F7/40
CPC分类号： G03F7/11 , C08F220/18 , C08F220/22 , C08F220/30 , C09D125/16 , C09D125/18 , C09D161/06 , G03F7/038 , G03F7/039 , G03F7/091 , G03F7/094 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/2037 , G03F7/322 , G03F7/38 , G03F7/40 , H01L21/0271 , H01L21/0274 , H01L21/31111
摘要： This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.

9. 发明申请

US20140099791A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY 审中-公开
标题翻译：用于形成抗蚀层膜的组合物用于EUV LITHOGRAPHY
公开(公告)号：US20140099791A1
公开(公告)日：2014-04-10
申请号：US14099278
申请日：2013-12-06
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Rikimaru SAKAMOTO , Takafumi ENDO , Bangching HO
IPC分类号： H01L21/311 , H01L21/308
CPC分类号： H01L21/31116 , C08G59/08 , C08L63/00 , G03F7/091 , G03F7/094 , G03F7/11 , H01L21/3081 , Y10S430/106
摘要： A method for producing a semiconductor device includes the steps of: applying a composition for forming a resist underlayer film for EUV lithography including a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and applying a resist for EUV lithography onto the resist underlayer film for EUV lithography, irradiating, with EUV through a mask, the resist underlayer film for EUV lithography and a film of the resist for EUV lithography on the resist underlayer film, developing the film of the resist for EUV lithography, and transferring an image formed in the mask onto the substrate by dry etching so as to form an integrated circuit device.
摘要翻译：一种制造半导体器件的方法包括以下步骤：将包含含有卤素原子的酚醛清漆树脂的EUV光刻用抗蚀剂下层膜形成用组合物涂布到具有用于形成转印图案的被制造膜的基材上，以形成用于EUV光刻的抗蚀剂下层膜; 并将用于EUV光刻的抗蚀剂涂覆在用于EUV光刻的抗蚀剂下层膜上，用EUV通过掩模，用于EUV光刻的抗蚀剂下层膜和抗蚀剂下层膜上的EUV光刻用抗蚀剂膜照射，用于EUV光刻的抗蚀剂，并通过干蚀刻将在掩模中形成的图像转印到基底上，从而形成集成电路器件。

10. 发明申请

US20200379352A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING SUBSTITUTED CROSSLINKABLE COMPOUND 审中-公开
公开(公告)号：US20200379352A1
公开(公告)日：2020-12-03
申请号：US16986921
申请日：2020-08-06
申请人： NISSAN CHEMICAL INDUSTRIES, LTD.
发明人： Keisuke HASHIMOTO , Kenji TAKASE , Tetsuya SHINJO , Rikimaru SAKAMOTO , Takafumi ENDO , Hirokazu NISHIMAKI
IPC分类号： G03F7/11 , C09D161/22 , C09D161/06 , C08G12/08 , G03F7/09 , G03F7/40 , C07C39/10 , C07C43/178 , H01L21/311
摘要： A resist underlayer film-forming composition includes a resin; and a crosslinkable compound of Formula (1) or Formula (2): wherein the crosslinkable compound of Formula (1) or Formula (2) is a compound obtained by reacting a compound of Formula (3) or Formula (4): with an ether compound comprising a hydroxy group or a C2-10 alcohol.

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