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1. 发明申请

US20060291311A1 MEMORY DEVICE FOR RETAINING DATA DURING POWER-DOWN MODE AND METHOD OF OPERATING THE SAME 有权
标题翻译：用于在掉电模式期间保留数据的存储器件及其操作方法
公开(公告)号：US20060291311A1
公开(公告)日：2006-12-28
申请号：US11423673
申请日：2006-06-12
申请人： Myung-Gyoo Won , Bu-Il Jung
发明人： Myung-Gyoo Won , Bu-Il Jung
IPC分类号： G11C8/00 , G11C7/02
CPC分类号： G11C5/14 , G11C7/065 , G11C11/4091 , G11C2207/065
摘要： A memory device includes a bit line sense amplifier, a command decoder configured to generate an internal control signal indicating an operating mode of the memory device, and a bit line sense amplifier controller configured to selectively apply an external voltage as a supply voltage to the bit line sense amplifier in response to the internal control signal.
摘要翻译：存储器件包括位线读出放大器，配置为产生指示存储器件工作模式的内部控制信号的命令解码器，以及位线读出放大器控制器，被配置为选择性地将外部电压作为电源电压施加到位线路感测放大器响应内部控制信号。

2. 发明授权

US07492654B2 Memory device for retaining data during power-down mode and method of operating the same 有权
标题翻译：用于在掉电模式下保留数据的存储器件及其操作方法
公开(公告)号：US07492654B2
公开(公告)日：2009-02-17
申请号：US11423673
申请日：2006-06-12
申请人： Myung-Gyoo Won , Bu-Il Jung
发明人： Myung-Gyoo Won , Bu-Il Jung
IPC分类号： G11C7/00
CPC分类号： G11C5/14 , G11C7/065 , G11C11/4091 , G11C2207/065
摘要： A memory device includes a bit line sense amplifier, a command decoder configured to generate an internal control signal indicating an operating mode of the memory device, and a bit line sense amplifier controller configured to selectively apply an external voltage as a supply voltage to the bit line sense amplifier in response to the internal control signal.
摘要翻译：存储器件包括位线读出放大器，配置为产生指示存储器件工作模式的内部控制信号的命令解码器，以及位线读出放大器控制器，被配置为选择性地将外部电压作为电源电压施加到位线路感测放大器响应内部控制信号。

3. 发明申请

US20050073356A1 Voltage generation circuits for supplying an internal voltage to an internal circuit and related methods 失效
标题翻译：用于向内部电路提供内部电压的电压产生电路及相关方法
公开(公告)号：US20050073356A1
公开(公告)日：2005-04-07
申请号：US10921619
申请日：2004-08-19
申请人： Myung-Gyoo Won
发明人： Myung-Gyoo Won
IPC分类号： G11C5/14 , G05F1/10 , G05F1/46
CPC分类号： G05F1/465
摘要： Internal voltage generators are provided, as well as methods of overdriving an internal voltage generation circuit. Embodiments of the internal voltage generator comprise a first driver for receiving an external voltage to supply an internal voltage to the internal circuit in response to an input voltage; a comparator for comparing a reference voltage with a fed-back internal voltage to generate the input voltage of the first driver; a variable pulse generating circuit responsive to an input pulse; and a second driver for dropping the input voltage of the first driver to a ground voltage in response to the variable pulse produced by the variable pulse generating circuit. The internal voltage generator can generate the internal voltage of a relatively constant level without regard to increase of the external voltage or frequency of an operating signal.
摘要翻译：提供内部电压发生器，以及过驱动内部电压产生电路的方法。内部电压发生器的实施例包括用于接收外部电压以响应于输入电压向内部电路提供内部电压的第一驱动器; 比较器，用于将参考电压与反馈内部电压进行比较以产生第一驱动器的输入电压; 响应于输入脉冲的可变脉冲发生电路; 以及第二驱动器，用于响应于由可变脉冲发生电路产生的可变脉冲将第一驱动器的输入电压降低到接地电压。内部电压发生器可以产生相对恒定电平的内部电压，而不考虑操作信号的外部电压或频率的增加。

4. 发明授权

US07576575B2 Reset signal generator in semiconductor device 有权
标题翻译：半导体器件中的复位信号发生器
公开(公告)号：US07576575B2
公开(公告)日：2009-08-18
申请号：US11511850
申请日：2006-08-29
申请人： Myung-Gyoo Won , Kyu-Chan Lee
发明人： Myung-Gyoo Won , Kyu-Chan Lee
IPC分类号： H03L7/00
CPC分类号： H03K17/223 , G11C5/147 , H03K17/145
摘要： A reset signal generator includes an output unit, a trip signal generator, an inverter unit, and a variation reducing unit. The output unit generates a reset signal from a pre-reset signal, and the reset signal follows a supply voltage signal before transitioning to a ground level when the supply voltage signal reaches a tripping voltage. The variation reducing unit is coupled to the inverter unit for reducing a range of the tripping voltage with temperature variations.
摘要翻译：复位信号发生器包括输出单元，跳闸信号发生器，逆变器单元和变化减少单元。输出单元从预复位信号产生复位信号，并且当电源电压信号达到跳闸电压时，复位信号在转换到接地电平之前跟随电源电压信号。变化减小单元耦合到逆变器单元，用于随着温度变化减小跳闸电压的范围。

5. 发明授权

US07298200B2 Voltage generation circuits for supplying an internal voltage to an internal circuit and related methods 失效
标题翻译：用于向内部电路提供内部电压的电压产生电路及相关方法
公开(公告)号：US07298200B2
公开(公告)日：2007-11-20
申请号：US10921619
申请日：2004-08-19
申请人： Myung-Gyoo Won
发明人： Myung-Gyoo Won
IPC分类号： G05F1/10
CPC分类号： G05F1/465
摘要： Internal voltage generators are provided, as well as methods of overdriving an internal voltage generation circuit. Embodiments of the internal voltage generator comprise a first driver for receiving an external voltage to supply an internal voltage to the internal circuit in response to an input voltage; a comparator for comparing a reference voltage with a fed-back internal voltage to generate the input voltage of the first driver; a variable pulse generating circuit responsive to an input pulse; and a second driver for dropping the input voltage of the first driver to a ground voltage in response to the variable pulse produced by the variable pulse generating circuit. The internal voltage generator can generate the internal voltage of a relatively constant level without regard to increase of the external voltage or frequency of an operating signal.
摘要翻译：提供内部电压发生器，以及过驱动内部电压产生电路的方法。内部电压发生器的实施例包括用于接收外部电压以响应于输入电压向内部电路提供内部电压的第一驱动器; 比较器，用于将参考电压与反馈内部电压进行比较，以产生第一驱动器的输入电压; 响应于输入脉冲的可变脉冲发生电路; 以及第二驱动器，用于响应于由可变脉冲发生电路产生的可变脉冲将第一驱动器的输入电压降低到接地电压。内部电压发生器可以产生相对恒定电平的内部电压，而不考虑操作信号的外部电压或频率的增加。

6. 发明授权

US07085179B2 Integrated circuit having a non-volatile memory cell transistor as a fuse device 失效
公开(公告)号：US07085179B2
公开(公告)日：2006-08-01
申请号：US10776600
申请日：2004-02-12
申请人： Jong-Wook Park , Sang-Jae Lee , Myung-Gyoo Won
发明人： Jong-Wook Park , Sang-Jae Lee , Myung-Gyoo Won
IPC分类号： G11C29/00 , G11C7/00
CPC分类号： G11C29/789 , G11C16/0433 , G11C2216/10 , H01L27/115 , H01L27/11558
摘要： A semiconductor integrated circuit device has a fuse device that can be electrically disconnected without a breakage caused by using a laser beam or current. The semiconductor integrated circuit device employs, as the fuse device for storing status information, a MOSFET of a single polysilicon EEPROM-type cell manufactured through a process of fabricating a volatile semiconductor memory cell array.

7. 发明申请

US20070152721A1 Reset signal generator in semiconductor device 有权
标题翻译：半导体器件中的复位信号发生器
公开(公告)号：US20070152721A1
公开(公告)日：2007-07-05
申请号：US11511850
申请日：2006-08-29
申请人： Myung-Gyoo Won , Kyu-Chan Lee
发明人： Myung-Gyoo Won , Kyu-Chan Lee
IPC分类号： H03L7/00
CPC分类号： H03K17/223 , G11C5/147 , H03K17/145
摘要： A reset signal generator includes an output unit, a trip signal generator, an inverter unit, and a variation reducing unit. The output unit generates a reset signal from a pre-reset signal, and the reset signal follows a supply voltage signal before transitioning to a ground level when the supply voltage signal reaches a tripping voltage. The variation reducing unit is coupled to the inverter unit for reducing a range of the tripping voltage with temperature variations.
摘要翻译：复位信号发生器包括输出单元，跳闸信号发生器，逆变器单元和变化减少单元。输出单元从预复位信号产生复位信号，并且当电源电压信号达到跳闸电压时，复位信号在转换到接地电平之前跟随电源电压信号。变化减小单元耦合到逆变器单元，用于随着温度变化减小跳闸电压的范围。

8. 发明申请

US20050074051A1 Temperature sensing circuit for use in semiconductor integrated circuit 失效
标题翻译：温度传感电路用于半导体集成电路
公开(公告)号：US20050074051A1
公开(公告)日：2005-04-07
申请号：US10942776
申请日：2004-09-17
申请人： Myung-Gyoo Won , Jae-Hoon Kim , Jong-Wook Park
发明人： Myung-Gyoo Won , Jae-Hoon Kim , Jong-Wook Park
IPC分类号： G11C11/40 , G01K3/00 , G11C7/04 , G01K7/00
CPC分类号： G01K3/005
摘要： A temperature sensing circuit has numerous trip points in conformity with a temperature change without adding decrease resistance branches, so as to obtain a fine control based on the temperature change. Accordingly, when employed in a semiconductor memory device, the temperature sensing circuit substantially reduces the consumption of refresh electrical power in a stand-by state without decreasing the reliability of the semiconductor memory device.
摘要翻译：温度检测电路具有多个温度变化的跳变点，而不增加减少电阻分支，从而获得基于温度变化的精细控制。因此，当采用半导体存储器件时，温度检测电路在不降低半导体存储器件的可靠性的情况下，基本上降低了备用状态下刷新电力的消耗。

9. 发明授权

US07821860B2 Stable temperature adjustment for refresh control 有权
标题翻译：稳定的温度调节刷新控制
公开(公告)号：US07821860B2
公开(公告)日：2010-10-26
申请号：US11549889
申请日：2006-10-16
申请人： Hiu-Kap Yang , Myung-Gyoo Won
发明人： Hiu-Kap Yang , Myung-Gyoo Won
IPC分类号： G11C11/406 , G11C7/04
CPC分类号： G11C11/406 , G11C11/40615 , G11C11/40626
摘要： A refresh control circuit and method generates a refresh signal in response to one of a plurality of clock signals and a temperature signal. The clock signals and temperature signal may be synchronized to prevent an incomplete refresh operation at a trip point of a temperature sensor. In one embodiment, a pulse generator may generate a temperature sensor enable signal in response to the clock signals when the clock signals are synchronized. In other embodiments, the temperature signal may be latched to prevent a transition in the refresh signal during a refresh operation. The temperature signal may be latched in response to one of the clock signals or the refresh signal.
摘要翻译：刷新控制电路和方法响应于多个时钟信号和温度信号中的一个产生刷新信号。时钟信号和温度信号可以被同步以防止在温度传感器的跳变点处的不完全的刷新操作。在一个实施例中，当时钟信号同步时，脉冲发生器可以响应于时钟信号而产生温度传感器使能信号。在其他实施例中，可以锁存温度信号以防止刷新操作期间刷新信号的转变。温度信号可以响应于时钟信号之一或刷新信号被锁存。

10. 发明授权

US07724572B2 Integrated circuit having a non-volatile memory cell transistor as a fuse device 失效
标题翻译：具有作为熔丝器件的非易失性存储单元晶体管的集成电路
公开(公告)号：US07724572B2
公开(公告)日：2010-05-25
申请号：US11451441
申请日：2006-06-13
申请人： Jong-Wook Park , Sang-Jae Lee , Myung-Gyoo Won
发明人： Jong-Wook Park , Sang-Jae Lee , Myung-Gyoo Won
IPC分类号： G11C16/06
CPC分类号： G11C29/789 , G11C16/0433 , G11C2216/10 , H01L27/115 , H01L27/11558
摘要： A semiconductor integrated circuit device has a fuse device that can be electrically disconnected without a breakage caused by using a laser beam or current. The semiconductor integrated circuit device employs, as the fuse device for storing status information, a MOSFET of a single polysilicon EEPROM-type cell manufactured through a process of fabricating a volatile semiconductor memory cell array.
摘要翻译：一种半导体集成电路器件具有可以在不由于使用激光束或电流导致的断裂的情况下电断开的熔丝器件。半导体集成电路器件采用通过制造易失性半导体存储单元阵列的工艺制造的单个多晶硅EEPROM型单元的MOSFET作为用于存储状态信息的熔丝器件。

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