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1. 发明申请

US20070148348A1 Evaporation source and method of depositing thin film using the same 审中-公开
标题翻译：蒸发源和使用其沉积薄膜的方法
公开(公告)号：US20070148348A1
公开(公告)日：2007-06-28
申请号：US11583930
申请日：2006-10-20
申请人： Myung Soo Huh , Kazuo Furuno , Sang Jin Han , Jae Hong Ahn , Seok Heon Jeong
发明人： Myung Soo Huh , Kazuo Furuno , Sang Jin Han , Jae Hong Ahn , Seok Heon Jeong
IPC分类号： C23C16/00
CPC分类号： C23C14/12 , C23C14/243
摘要： An evaporation source and method for depositing a thin film, including a crucible having a predetermined space for placing a deposition material and at least one baffle, the baffle positioned inside the crucible and parallel to the predetermined space to divide the crucible into a plurality of channels, a heating unit, and at least one spray nozzle in fluid communication with the crucible, the spray nozzle having a plurality of spray orifices.
摘要翻译：一种用于沉积薄膜的蒸发源和方法，包括具有用于放置沉积材料和至少一个挡板的预定空间的坩埚，所述挡板位于坩埚内并平行于预定空间，以将坩埚分成多个通道，加热单元和与坩埚流体连通的至少一个喷嘴，喷嘴具有多个喷射孔。

2. 发明授权

US07914621B2 Vapor deposition source and vapor deposition apparatus having the same 有权
标题翻译：蒸气沉积源及其蒸镀装置
公开(公告)号：US07914621B2
公开(公告)日：2011-03-29
申请号：US11342681
申请日：2006-01-31
申请人： Do Geun Kim , Myung Soo Huh , Seok Heon Jeong , Hee Cheol Kang , Kazuo Furuno
发明人： Do Geun Kim , Myung Soo Huh , Seok Heon Jeong , Hee Cheol Kang , Kazuo Furuno
IPC分类号： C23C16/00
CPC分类号： C23C14/243 , C23C14/24
摘要： A vapor deposition source has a reduced size by disposing a crucible, a heating portion, and a nozzle portion in one defined space. A vapor deposition apparatus deposits deposition materials on a substrate using the vapor deposition source. The vapor deposition source includes a housing, and the crucible is mounted in the housing for vaporizing the deposition materials. The heating portion is installed adjacent to the crucible in the housing for heating the crucible. The nozzle portion injects the vaporized deposition materials into a substrate disposed at an exterior of the housing through an injection nozzle. The vapor deposition source is manufactured in a smaller and lightweight form in comparison with conventional vapor deposition sources in which a crucible and a nozzle portion are arranged in different spaces. The diameter and number of injection nozzles of the invention are restricted to block radiant heat discharged from the vapor deposition source, so that deposition materials are uniformly deposited. Furthermore, the output power of a conveyer for conveying the vapor deposition source is reduced. In addition, a plurality of vapor deposition sources is arranged in a line to perform concentrated deposition of deposition materials so that quality of the resultant product is improved.
摘要翻译：气相沉积源通过在一个限定的空间内设置坩埚，加热部分和喷嘴部分而具有减小的尺寸。气相沉积设备使用蒸镀源将沉积材料沉积在基板上。气相沉积源包括壳体，并且坩埚安装在壳体中以使沉积材料蒸发。加热部分安装在坩埚附近，用于加热坩埚。喷嘴部分通过注射喷嘴将蒸发的沉积材料注入设置在外壳外部的基板中。与其中坩埚和喷嘴部分布置在不同空间中的常规气相沉积源相比，气相沉积源以更小和轻质的形式制造。本发明的注射喷嘴的直径和数量被限制为阻挡从蒸镀源排出的辐射热，从而均匀地沉积沉积材料。此外，用于输送气相沉积源的输送机的输出功率降低。此外，多个气相沉积源被排列成一行，以进行沉积材料的浓缩沉积，从而提高所得产品的质量。

3. 发明申请

US20060254514A1 Catalyst enhanced chemical vapor deposition apparatus 有权
标题翻译：催化剂增强化学气相沉积装置
公开(公告)号：US20060254514A1
公开(公告)日：2006-11-16
申请号：US11413927
申请日：2006-04-28
申请人： Hee Kang , Kazuo Furuno , Han Kim , Myoung Kim
发明人： Hee Kang , Kazuo Furuno , Han Kim , Myoung Kim
IPC分类号： C23C16/00
CPC分类号： C23C16/44 , C23C16/4408 , C23C16/455
摘要： A catalyst enhanced chemical vapor deposition (CECVD) apparatus is provided in which the showerhead and catalyst support are separated from each other. The CECVD apparatus has excellent spacing between the showerhead, catalyst wire and substrate and can be purged to prevent contaminants from forming on parts functioning at low temperatures. The CECVD apparatus comprises a reaction chamber, a showerhead for introducing reaction gas into the reaction chamber, a catalyst wire for decomposing the reaction gas, a catalyst support for supporting the catalyst wire, a substrate on which the decomposed gas is deposited, and a substrate support for supporting the substrate.
摘要翻译：提供催化剂增强化学气相沉积（CECVD）装置，其中喷头和催化剂载体彼此分离。 CECVD装置在喷头，催化剂丝和基材之间具有优异的间距，并且可以被清除以防止在低温下起作用的部件上形成污染物。 CECVD装置包括反应室，用于将反应气体引入反应室的喷头，用于分解反应气体的催化剂丝，用于负载催化剂丝的催化剂载体，沉积有分解气体的基板和基板支持底物支撑。

4. 发明申请

US20060254513A1 Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same 有权
标题翻译：催化剂增强化学气相沉积装置及其沉积方法
公开(公告)号：US20060254513A1
公开(公告)日：2006-11-16
申请号：US11405552
申请日：2006-04-18
申请人： Hee-Cheol Kang , Kazuo Furuno , Han-Ki Kim , Myoung-Soo Kim
发明人： Hee-Cheol Kang , Kazuo Furuno , Han-Ki Kim , Myoung-Soo Kim
IPC分类号： C23C16/00
CPC分类号： C23C16/44 , C23C16/46
摘要： A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated. The CECVD apparatus may be constructed with a process chamber, a showerhead to introduce process gas into process chamber, a tensile catalyst wire structure provided in the process chamber to decompose the gas introduced from the showerhead, and a substrate on which the gas decomposed by the catalyst wire structure is deposited, so that the tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated, thereby eliminating occurrences of non-uniform temperatures of a substrate and non-uniform film growth, and concomitantly enhancing the durability of the catalyst wire.
摘要翻译：催化剂增强化学气相沉积（CECVD）装置和沉积方法，其中向催化剂丝施加张力以防止催化剂丝由于热变形而下垂，并且使用另外的气体来防止异物生成。 CECVD装置可以构造有处理室，将工艺气体引入处理室的喷头，设置在处理室中的分解从喷头引入的气体的拉伸催化剂丝线结构以及由其分解的气体催化剂丝线结构被沉积，使得张力被施加到催化剂丝上，以防止催化剂丝由于热变形而下垂，并且使用额外的气体来防止产生异物，从而消除不均匀的发生底物的温度和不均匀的膜生长，并且伴随地提高催化剂丝的耐久性。

5. 发明申请

US20060169211A1 Vapor deposition source and vapor deposition apparatus having the same 有权
标题翻译：蒸气沉积源及其蒸镀装置
公开(公告)号：US20060169211A1
公开(公告)日：2006-08-03
申请号：US11342681
申请日：2006-01-31
申请人： Do Kim , Myung Huh , Seok Jeong , Hee Kang , Kazuo Furuno
发明人： Do Kim , Myung Huh , Seok Jeong , Hee Kang , Kazuo Furuno
IPC分类号： C23C16/00
CPC分类号： C23C14/243 , C23C14/24
摘要： A vapor deposition source has a reduced size by disposing a crucible, a heating portion, and a nozzle portion in one defined space. A vapor deposition apparatus deposits deposition materials on a substrate using the vapor deposition source. The vapor deposition source includes a housing, and the crucible is mounted in the housing for vaporizing the deposition materials. The heating portion is installed adjacent to the crucible in the housing for heating the crucible. The nozzle portion injects the vaporized deposition materials into a substrate disposed at an exterior of the housing through an injection nozzle. The vapor deposition source is manufactured in a smaller and lightweight form in comparison with conventional vapor deposition sources in which a crucible and a nozzle portion are arranged in different spaces. The diameter and number of injection nozzles of the invention are restricted to block radiant heat discharged from the vapor deposition source, so that deposition materials are uniformly deposited. Furthermore, the output power of a conveyer for conveying the vapor deposition source is reduced. In addition, a plurality of vapor deposition sources is arranged in a line to perform concentrated deposition of deposition materials so that quality of the resultant product is improved.
摘要翻译：气相沉积源通过在一个限定的空间内设置坩埚，加热部分和喷嘴部分而具有减小的尺寸。气相沉积设备使用蒸镀源将沉积材料沉积在基板上。气相沉积源包括壳体，并且坩埚安装在壳体中以使沉积材料蒸发。加热部分安装在坩埚附近，用于加热坩埚。喷嘴部分通过注射喷嘴将蒸发的沉积材料注入设置在外壳外部的基板中。与其中坩埚和喷嘴部分布置在不同空间中的常规气相沉积源相比，气相沉积源以更小和轻质的形式制造。本发明的注射喷嘴的直径和数量被限制为阻挡从蒸镀源排出的辐射热，从而均匀地沉积沉积材料。此外，用于输送气相沉积源的输送机的输出功率降低。此外，多个气相沉积源被排列成一行，以进行沉积材料的浓缩沉积，从而提高所得产品的质量。

6. 发明授权

US08052795B2 Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same 有权
标题翻译：催化剂增强化学气相沉积装置及其沉积方法
公开(公告)号：US08052795B2
公开(公告)日：2011-11-08
申请号：US11405552
申请日：2006-04-18
申请人： Hee-Cheol Kang , Kazuo Furuno , Han-Ki Kim , Myoung-Soo Kim
发明人： Hee-Cheol Kang , Kazuo Furuno , Han-Ki Kim , Myoung-Soo Kim
IPC分类号： C23C16/00
CPC分类号： C23C16/44 , C23C16/46
摘要： A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated. The CECVD apparatus may be constructed with a process chamber, a showerhead to introduce process gas into process chamber, a tensile catalyst wire structure provided in the process chamber to decompose the gas introduced from the showerhead, and a substrate on which the gas decomposed by the catalyst wire structure is deposited, so that the tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated, thereby eliminating occurrences of non-uniform temperatures of a substrate and non-uniform film growth, and concomitantly enhancing the durability of the catalyst wire.
摘要翻译：催化剂增强化学气相沉积（CECVD）装置和沉积方法，其中向催化剂丝施加张力以防止催化剂丝由于热变形而下垂，并且使用另外的气体来防止异物生成。 CECVD装置可以构造有处理室，将工艺气体引入处理室的喷头，设置在处理室中的分解从喷头引入的气体的拉伸催化剂丝线结构以及由其分解的气体催化剂丝线结构被沉积，使得张力被施加到催化剂丝上，以防止催化剂丝由于热变形而下垂，并且使用额外的气体来防止产生异物，从而消除不均匀的发生底物的温度和不均匀的膜生长，并且伴随地提高催化剂丝的耐久性。

7. 发明授权

US07942968B2 Catalyst enhanced chemical vapor deposition apparatus 有权
标题翻译：催化剂增强化学气相沉积装置
公开(公告)号：US07942968B2
公开(公告)日：2011-05-17
申请号：US11413927
申请日：2006-04-28
申请人： Hee Cheol Kang , Kazuo Furuno , Han Ki Kim , Myoung Soo Kim
发明人： Hee Cheol Kang , Kazuo Furuno , Han Ki Kim , Myoung Soo Kim
IPC分类号： C23C16/44 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/44 , C23C16/4408 , C23C16/455
摘要： A catalyst enhanced chemical vapor deposition (CECVD) apparatus is provided in which the showerhead and catalyst support are separated from each other. The CECVD apparatus has excellent spacing between the showerhead, catalyst wire and substrate and can be purged to prevent contaminants from forming on parts functioning at low temperatures. The CECVD apparatus comprises a reaction chamber, a showerhead for introducing reaction gas into the reaction chamber, a catalyst wire for decomposing the reaction gas, a catalyst support for supporting the catalyst wire, a substrate on which the decomposed gas is deposited, and a substrate support for supporting the substrate.
摘要翻译：提供催化剂增强化学气相沉积（CECVD）装置，其中喷头和催化剂载体彼此分离。 CECVD装置在喷头，催化剂丝和基材之间具有优异的间距，并且可以被清除以防止在低温下起作用的部件上形成污染物。 CECVD装置包括反应室，用于将反应气体引入反应室的喷头，用于分解反应气体的催化剂丝，用于负载催化剂丝的催化剂载体，沉积有分解气体的基板和基板支持底物支撑。

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