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1. 发明授权

US5427357A Control valve 失效
标题翻译：控制阀
公开(公告)号：US5427357A
公开(公告)日：1995-06-27
申请号：US209906
申请日：1994-03-14
申请人： Mutsunori Koyomogi , Kunihiko Daido , Masahiko Nakazawa , Yukio Minami , Masahiko Sogao , Kazuhiro Yoshikawa , Shuhei Ogawa , Tetsuya Kojima
发明人： Mutsunori Koyomogi , Kunihiko Daido , Masahiko Nakazawa , Yukio Minami , Masahiko Sogao , Kazuhiro Yoshikawa , Shuhei Ogawa , Tetsuya Kojima
IPC分类号： F16K1/10 , F16K41/10 , F16K3/00
CPC分类号： F16K41/10 , F16K1/10 , Y10T137/6416
摘要： A control valve comprises a valve body having a fluid channel and a valve seat; a valve operating part; a valve stem supporting member having its upper end fixed to the valve operating part and its lower end fixed to the valve body; a valve stem penetrating the valve stem supporting member and having its upper end part connected to the valve operating part and its lower end part entering the valve body, the valve stem being movable upward or downward by the valve operating part; and a valve element attached to the lower end of the valve stem. The valve element is moved upward or downward by moving the valve stem upward or downward, the valve element being brought into contact with and seated in the valve seat to close a fluid channel as it is moved downward, the valve element being detached from the valve seat to open the fluid channel as it is moved upward. The valve stem supporting member has an upper tubular body and a lower tubular body, the upper tubular body having its upper end fixed to the valve operating part and its lower end detached from the valve body, the lower tubular body having its lower end fixed to the valve body and its upper end detached from the valve operating part, the two tubular bodies being spaced apart each other, the lower end part of the upper tubular body and the upper end part of the lower tubular body being connected by a connecting member.
摘要翻译：控制阀包括具有流体通道和阀座的阀体; 阀门操作部分; 阀杆支撑构件，其上端固定到阀操作部分，其下端固定到阀体; 阀杆贯穿阀杆支撑构件，其上端部分连接到阀操作部分，其下端部分进入阀体，阀杆可由阀操作部件向上或向下移动; 以及附接到阀杆的下端的阀元件。阀元件通过向上或向下移动阀杆而向上或向下移动，阀元件与阀座接触并安置在阀座中，以在其向下移动时闭合流体通道，阀元件从阀门拆下座椅向上移动以打开流体通道。阀杆支撑构件具有上管状体和下管状体，上管状体的上端固定到阀操作部分，其下端与阀体分离，下管状体的下端固定到阀体及其上端与阀操作部分脱离，两个管状体彼此间隔开，上管状体的下端部和下管状体的上端部通过连接部件连接。

2. 发明授权

US5634627A Controller 失效
标题翻译：控制器
公开(公告)号：US5634627A
公开(公告)日：1997-06-03
申请号：US555031
申请日：1995-11-08
申请人： Kunihiko Daido , Kazuhiro Yoshikawa , Shuhei Ogawa
发明人： Kunihiko Daido , Kazuhiro Yoshikawa , Shuhei Ogawa
IPC分类号： F16K31/122 , F16K31/126 , F16K41/10 , F16K51/02
CPC分类号： F16K41/10 , F16K31/1262
摘要： An actuator comprises a valve case opened upward, a gas-driven actuator having a fixed portion provided on the valve case and fixed thereto and an operating portion movable upward and downward by a drive gas when the gas flows in or out, a valve stem extending upward from inside the valve case to above the case and having its upper end fixed to the operating portion of the actuator, and a valve element provided on the lower end of the valve stem. A valve case fluid seal bellows and an actuator gas seal bellows are connected between the valve stem and the actuator fixed portion and between the actuator fixed portion and operating portion, respectively. A vacuum is contained in a closed space formed by the valve stem, fluid seal bellows, actuator fixed portion, gas seal bellows and actuator operating portion. The variations in the internal pressure of the closed space due to variations in the ambient temperature are much smaller than the pressure of the drive gas, so that the flow rate of fluid remains unchanged by the variations in the ambient temperature.
摘要翻译：致动器包括向上敞开的阀壳，气体驱动致动器，其具有设置在阀壳上并固定到其上的固定部分，以及当气体流入或流出时由驱动气体上下移动的操作部分;阀杆延伸从阀壳内部向上方延伸到壳体的上方并且其上端固定在致动器的操作部分上，以及设置在阀杆下端的阀元件。阀壳流体密封波纹管和致动器气体密封波纹管分别连接在阀杆和致动器固定部分之间以及致动器固定部分和操作部分之间。在阀杆，流体密封波纹管，致动器固定部分，气体密封波纹管和致动器操作部分形成的封闭空间中包含真空。由于环境温度的变化，封闭空间的内部压力的变化远远小于驱动气体的压力，使得流体的流量由于环境温度的变化而保持不变。

3. 发明授权

US5881997A Metal diaphragm type valve 失效
标题翻译：金属隔膜式阀
公开(公告)号：US5881997A
公开(公告)日：1999-03-16
申请号：US976639
申请日：1997-11-24
申请人： Shuhei Ogawa , Kazuhiro Yoshikawa
发明人： Shuhei Ogawa , Kazuhiro Yoshikawa
IPC分类号： F16K7/12 , F16J15/04 , F16K7/16 , F16K41/12 , F16K31/44
CPC分类号： F16K41/12
摘要： A metal diaphragm type valve includes a valve seat holder supported from a rotatable valve stem, a metal diaphragm and a deflection limiter. The valve seat holder has a shaft extending upwardly through central openings in the diaphragm and the deflection limiter. A diaphragm support step having an annular flat surface joining an arcuate shoulder is provided around the shaft of the valve seat holder and the inner peripheral edge of the diaphragm rests on the flat surface. The deflection limiter has a flat bottom surface facing the top surface of the diaphragm and an arcuate surface extends radially outwardly from the flat bottom surface. The deflection limiter, diaphragm and valve seat holder are welded together by a weld extending through the flat bottom portion of the deflection limiter and the inner peripheral edge of the diaphragm to the flat surface on the seat holder, the weld forming an air-tight seal between the valve chamber and the passage for the shaft. The radial dimensions of the flat surfaces are different so that bending stresses occur in different regions of the diaphragm depending on whether the valve is opened or closed.
摘要翻译：金属隔膜式阀包括从可旋转阀杆支撑的阀座保持器，金属隔膜和偏转限制器。阀座保持器具有向上延伸穿过隔膜中的中心开口的轴和偏转限制器。在阀座保持器的轴周围设置有具有连接弓形肩部的环形平坦表面的隔膜支撑台阶，并且隔膜的内周边缘搁置在平坦表面上。偏转限制器具有面向隔膜的顶表面的平坦底表面，并且弧形表面从平坦的底表面径向向外延伸。偏转限制器，隔膜和阀座保持器通过延伸穿过偏转限制器的平底部和隔膜的内周边缘的焊缝焊接到座椅保持器上的平坦表面上，焊接形成气密密封在阀室和用于轴的通道之间。平坦表面的径向尺寸是不同的，使得弯曲应力发生在隔膜的不同区域中，这取决于阀门是打开还是关闭。

4. 发明授权

US5655420A Magnetic tightening tool for preventing overtightening and undertightening 失效
标题翻译：磁性紧固工具，用于防止过紧和不紧紧
公开(公告)号：US5655420A
公开(公告)日：1997-08-12
申请号：US531448
申请日：1995-09-21
申请人： Shuhei Ogawa , Tetsuya Kojima , Hiroshi Ogawa , Koichiro Shoda
发明人： Shuhei Ogawa , Tetsuya Kojima , Hiroshi Ogawa , Koichiro Shoda
IPC分类号： B25B23/14 , B25B23/142 , B25B23/157
CPC分类号： B25B23/1427 , B25B23/14 , B25B23/141 , B25B23/1422
摘要： A tightening tool comprises a head having a socket for a nut to fit in, a head support supporting the head rotatably about the axis of the socket, and a handle integral with the head support. A magnet is attached to each of the head and the head support. The head and the head support are joined together by a force of attraction permitting these portions to rotate relative to each other upon the torque of tightening up the nut reaching a proper value. When the head support is rotated by turning the handle by hand, the head moves with the head support to tighten the nut. After the nut tightening torque has reached the proper value, the head support merely rotates idly with the head and the nut remaining unrotated even if the handle is turned.
摘要翻译：紧固工具包括具有用于安装螺母的插座的头部，可围绕插座的轴线可旋转地支撑头部的头部支撑件和与头部支撑件一体的手柄。磁头附着到头部和头部支撑件中的每一个上。头部和头部支撑件通过吸引力而接合在一起，使得这些部分能够在紧固螺母达到适当值时相对于彼此旋转。通过手动转动手柄旋转头部支架时，头部与头部支撑件一起移动以拧紧螺母。在螺母紧固扭矩已经达到适当值之后，即使手柄转动，头部支撑件也随着头部旋转而保持不旋转。

5. 发明授权

US08097534B2 Method for manufacturing semiconductor device and storage medium 有权
标题翻译：半导体器件和存储介质的制造方法
公开(公告)号：US08097534B2
公开(公告)日：2012-01-17
申请号：US12222442
申请日：2008-08-08
申请人： Shuhei Ogawa , Shin Hirotsu
发明人： Shuhei Ogawa , Shin Hirotsu
IPC分类号： H01L21/4763
CPC分类号： H01L21/31138 , H01L21/76808 , H01L21/76816
摘要： On an etching target film formed on a substrate, a three-layer resist is laminated. This three-layer resist includes an organic film and a resist film developed into a resist pattern. Through the resist pattern, the organic film is etched into a mask pattern through which the etching target film will be etched.The organic film is etched with plasma which is obtained by exciting a process gas containing carbon dioxide and hydrogen to the plasma state. This scheme makes it possible to form a high perpendicularity mask pattern in the organic film.
摘要翻译：在形成在基板上的蚀刻目标膜上层叠三层抗蚀剂。该三层抗蚀剂包括显影成抗蚀剂图案的有机膜和抗蚀剂膜。通过抗蚀剂图案，将有机膜蚀刻成蚀刻目标膜将被蚀刻的掩模图案。用等离子体蚀刻有机膜，该等离子体是通过将含有二氧化碳和氢气的工艺气体激发到等离子体状态获得的。该方案使得可以在有机膜中形成高垂直度掩模图案。

6. 发明申请

US20060118517A1 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US20060118517A1
公开(公告)日：2006-06-08
申请号：US10522569
申请日：2003-08-05
申请人： Shuhei Ogawa , Koichiro Inazawa
发明人： Shuhei Ogawa , Koichiro Inazawa
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01L21/31138 , H01L21/31144
摘要： The present invention is a method of etching a lower layer film (64) of an organic material formed on a surface layer (61) of a substrate, using an upper layer film (63) of an Si-containing organic material as a mask. A mixed gas containing an NH3 gas and an O2 gas is supplied into the processing vessel as an etching gas, so as to perform etching by a plasma of the etching gas. When the etching gas is supplied into the processing vessel, a CD shift value of etching can be controlled by adjusting a flow ratio of O2 gas to the NH3 gas. Specifically, a satisfactory CD shift value can be obtained when the flow ratio is from 0.5 to 20%, and preferably, 5 to 10%.
摘要翻译：本发明是使用含Si有机材料的上层膜（63）作为掩模，蚀刻在基板的表面层（61）上形成的有机材料的下层膜（64）的方法。将含有NH 3气体和O 2气体的混合气体作为蚀刻气体供给到处理容器中，以通过蚀刻气体的等离子体进行蚀刻。当蚀刻气体被供应到处理容器中时，可以通过调节O 2气体与NH 3气体的流量比来控制蚀刻的CD偏移值。具体地说，当流量比为0.5〜20％，优选为5〜10％时，可以得到令人满意的CD偏移值。

7. 发明申请

US20090047794A1 Method for manufacturing semiconductor device and storage medium 有权
标题翻译：半导体器件和存储介质的制造方法
公开(公告)号：US20090047794A1
公开(公告)日：2009-02-19
申请号：US12222442
申请日：2008-08-08
申请人： Shuhei Ogawa , Shin Hirotsu
发明人： Shuhei Ogawa , Shin Hirotsu
IPC分类号： H01L21/3065
CPC分类号： H01L21/31138 , H01L21/76808 , H01L21/76816
摘要： [Object] It is an object of the present invention to provide a semiconductor device manufacturing method capable of forming a high perpendicularity mask pattern, which is laminated on an etching target film on a substrate, through a resist pattern formed from a resist film laminated on the organic film, for use as an etching mask for the etching target film.[Means for Solving the Problem] There is provided a step of etching an organic film in a multi-layered resist laminated on an etching target film on a substrate, the multi-layered resist including the organic film and a resist film having a resist pattern laminated on the organic film, by a plasma, which has been obtained by making a process gas containing carbon dioxide and hydrogen, along the resist pattern, so as to form a mask pattern for etching the etching target film.
摘要翻译：本发明的目的是提供一种半导体器件制造方法，该半导体器件制造方法能够通过由抗蚀剂图案形成的抗蚀剂图案形成高垂直性掩模图案，该抗蚀剂图案层压在基板上的蚀刻目标膜上该有机膜用作蚀刻目标膜的蚀刻掩模。解决问题的手段提供了在层叠在基板上的蚀刻对象膜上的多层抗蚀剂中蚀刻有机膜的步骤，包含有机膜的多层抗蚀剂和具有抗蚀剂图案的抗蚀剂膜通过沿着抗蚀剂图案制造包含二氧化碳和氢气的工艺气体而获得的等离子体，以形成用于蚀刻蚀刻靶膜的掩模图案，在有机膜上层压。

8. 发明授权

US07465670B2 Plasma etching method, plasma etching apparatus, control program and computer storage medium with enhanced selectivity 有权
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置，控制程序和计算机存储介质，具有增强的选择性
公开(公告)号：US07465670B2
公开(公告)日：2008-12-16
申请号：US11390248
申请日：2006-03-28
申请人： Shin Hirotsu , Shuhei Ogawa
发明人： Shin Hirotsu , Shuhei Ogawa
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32935 , H01L21/31144 , H01L21/31633
摘要： On a surface of a semiconductor wafer W, a SiCN film, a SiCOH film, a TEOS film, an antireflection film, and a resist film (ArF resist) as a mask are formed in turn. A via hole is formed by plasma etching the SiCOH film with a predetermined etching gas comprising a mixed gas, for example, CF4/CH2F2/N2/O2 mixed gas (not containing a rare gas such as an Ar gas). Thereby, the selection ratio between a low dielectric constant insulation film comprising a carbon containing silicon oxide and the resist can be improved. And at the same time, even when the hole has a minute diameter and a high aspect ratio, an inner wall surface of the hole can be formed in a satisfactory state.
摘要翻译：在半导体晶片W的表面上依次形成SiCN膜，SiCOH膜，TEOS膜，抗反射膜和抗蚀剂膜（ArF抗蚀剂）作为掩模。通过用包含混合气体的预定蚀刻气体例如CF4 / CH2F2 / N2 / O2混合气体（不含Ar气等稀有气体）等离子体蚀刻SiCOH膜而形成通孔。由此，可以提高包含含碳氧化硅的低介电常数绝缘膜与抗蚀剂之间的选择比。同时，即使孔具有微小直径和高纵横比，也可以在令人满意的状态下形成孔的内壁面。

9. 发明申请

US20060213866A1 Plasma etching method, plasma etching apparatus, control program and computer storage medium 有权
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置，控制程序和计算机存储介质
公开(公告)号：US20060213866A1
公开(公告)日：2006-09-28
申请号：US11390248
申请日：2006-03-28
申请人： Shin Hirotsu , Shuhei Ogawa
发明人： Shin Hirotsu , Shuhei Ogawa
IPC分类号： C23F1/00 , H01L21/306 , B44C1/22
CPC分类号： H01L21/31116 , H01J37/32935 , H01L21/31144 , H01L21/31633
摘要： On a surface of a semiconductor wafer W, a SiCN film, a SiCOH film, a TEOS film, an antireflection film, and a resist film (ArF resist) as a mask are formed in turn. A via hole is formed by plasma etching the SiCOH film with a predetermined etching gas comprising a mixed gas, for example, CF4/CH2F2/N2/O2 mixed gas (not containing a rare gas such as an Ar gas). Thereby, the selection ratio between a low dielectric constant insulation film comprising a carbon containing silicon oxide and the resist can be improved. And at the same time, even when the hole has a minute diameter and a high aspect ratio, an inner wall surface of the hole can be formed in a satisfactory state.
摘要翻译：在半导体晶片W的表面上依次形成SiCN膜，SiCOH膜，TEOS膜，抗反射膜和抗蚀剂膜（ArF抗蚀剂）作为掩模。通过用包含混合气体的预定蚀刻气体等离子体蚀刻SiCOH膜形成通孔，例如CF 4 / CH 2 F 2，混合气体（不含Ar气等稀有气体）。由此，可以提高包含含碳氧化硅的低介电常数绝缘膜与抗蚀剂之间的选择比。同时，即使孔具有微小直径和高纵横比，也可以在令人满意的状态下形成孔的内壁面。

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