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1. 发明授权

US07149062B2 Spin valve structure with Si seed layer and reduced PtMn antiferromagnetic layer thickness 失效
标题翻译：具有Si种子层的旋转阀结构和降低的PtMn反铁磁层厚度
公开(公告)号：US07149062B2
公开(公告)日：2006-12-12
申请号：US10084845
申请日：2002-02-26
申请人： Mustafa Pinarbasi , Patrick Rush Webb
发明人： Mustafa Pinarbasi , Patrick Rush Webb
IPC分类号： G11B5/33
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49067
摘要： A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 Å and the PtMn layer has a thickness of approximately 120 Å. An alternative fabrication process of the Si layer includes the overdeposition of the layer to a first thickness of from 15 Å to 45 Å followed by the etching back of the seed layer of approximately 5 Å to approximately 15 Å to its desired final thickness of approximately 20 Å. The Si layer results in an improved crystal structure to the subsequently fabricated PtMn and other spin valve sensor layers, such that the fabricated spin valve is thinner and exhibits increased ΔR/R and reduced coercivity.
摘要翻译：具有自旋阀传感器的磁头，其使用随后制造PtMn自旋阀传感器层结构的Al 2 O 3 N，NiMnO，Si种子层制造。在优选实施例中，Si层的厚度约为20埃，PtMn层的厚度约为120埃。 Si层的替代制造工艺包括将该层过度沉积到第一厚度为从Å至Å至的第一厚度，接着将种子层的蚀刻回到大约5至大约15至所期望的最终厚度约为20 一个。 Si层导致随后制备的PtMn和其它自旋阀传感器层的改进的晶体结构，使得制造的自旋阀更薄并且表现出增加的DeltaR / R和降低的矫顽力。

2. 发明授权

US06744607B2 Exchange biased self-pinned spin valve sensor with recessed overlaid leads 失效
标题翻译：交替偏置自锁自旋阀传感器，带有凹进的重叠导线
公开(公告)号：US06744607B2
公开(公告)日：2004-06-01
申请号：US10104457
申请日：2002-03-21
申请人： James Mac Freitag , Mustafa Pinarbasi , Patrick Rush Webb
发明人： James Mac Freitag , Mustafa Pinarbasi , Patrick Rush Webb
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3903 , G11B2005/3996
摘要： A spin valve sensor includes an antiparallel (AP) pinned layer structure which is self-pinned without the assistance of an antiferromagnetic (AFM) pinning layer. A free layer of the spin valve sensor has first and second wing portions which extend laterally beyond a track width of the spin valve sensor and are exchange coupled to first and second AFM pinning layers. Magnetic moments of the wing portions of the free layer are pinned parallel to the ABS and parallel to major planes of the layers of the sensor for magnetically stabilizing the central portion of the free layer which is located within the track width. The spin valve sensor has a central portion that extends between the first and second AFM layers. First and second lead layers overlay the first and second AFM layers and further overlay first and second portions of the central portion so that a distance between the first and second lead layers defines a track width that is less than a distance between the first and second AFM layers. The spin valve sensor has a cap layer structure that has a full thickness portion which is located between first and second reduced thickness portions and the first and second lead layers engage the cap layer structure within the first and second reduced thickness portions.
摘要翻译：自旋阀传感器包括反并联（AP）钉扎层结构，其在没有反铁磁（AFM）钉扎层的帮助下是自固定的。自旋阀传感器的自由层具有横向延伸超过自旋阀传感器的轨道宽度的第一和第二翼部分，并且交换耦合到第一和第二AFM钉扎层。自由层的翼部的磁矩被平行于ABS并且平行于传感器的各层的主平面固定，以磁化地稳定位于轨道宽度内的自由层的中心部分。自旋阀传感器具有在第一和第二AFM层之间延伸的中心部分。第一和第二引线层覆盖第一和第二AFM层，并进一步覆盖中心部分的第一和第二部分，使得第一和第二引线层之间的距离限定小于第一和第二AFM之间的距离的轨道宽度层。自旋阀传感器具有盖层结构，其具有位于第一和第二厚度减小部分之间的全部厚度部分，并且第一和第二引线层与第一和第二厚度部分内的盖层结构接合。

3. 发明授权

US06437950B1 Top spin valve sensor that has an iridium manganese (IrMn) pinning layer and an iridium manganese oxide (IrMnO) seed layer 失效
标题翻译：具有铱锰（IrMn）钉扎层和铱锰氧化物（IrMnO）种子层的顶部自旋阀传感器
公开(公告)号：US06437950B1
公开(公告)日：2002-08-20
申请号：US09687404
申请日：2000-10-12
申请人： Phong Chau , Mustafa Pinarbasi , Hua A. Zeng , Patrick Rush Webb
发明人： Phong Chau , Mustafa Pinarbasi , Hua A. Zeng , Patrick Rush Webb
IPC分类号： G11B539
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B5/3967
摘要： A top spin valve sensor includes an iridium manganese (IrMn) pinning layer which has been formed by ion beam sputter deposition. The magnetoresistive coefficient of the spin valve sensor is increased by employing an iridium manganese oxide (IrMnO) seed layer between a free layer of the spin valve sensor and a first read gap layer of the read head. The free layer is preferably a nickel iron free film located between first and second cobalt iron (CoFe) free films.
摘要翻译：顶部自旋阀传感器包括通过离子束溅射沉积形成的铱锰（IrMn）钉扎层。旋转阀传感器的磁阻系数通过在自旋阀传感器的自由层和读取头的第一读取间隙层之间使用铱氧化锰（IrMnO）种子层而增加。自由层优选为位于第一和第二钴铁（CoFe）的膜之间的不含镍铁的膜。

4. 发明授权

US06785101B2 Overlaid lead giant magnetoresistive head with side reading reduction 失效
标题翻译：覆盖铅巨磁阻头，侧读数减少
公开(公告)号：US06785101B2
公开(公告)日：2004-08-31
申请号：US09905522
申请日：2001-07-12
申请人： Patrick Rush Webb , Mustafa Pinarbasi , Richard Hsiao , Hardayal Singh Gill
发明人： Patrick Rush Webb , Mustafa Pinarbasi , Richard Hsiao , Hardayal Singh Gill
IPC分类号： G11B533
CPC分类号： B82Y10/00 , G11B5/3903 , G11B5/398
摘要： The first and second side surfaces of either a bottom spin valve sensor or a top spin valve sensor are notched so as to enable a reduction in the magnetoresistive coefficient of side portions of the sensor beyond the track width region thereby minimizing side reading by the sensor. The first and second notches of the spin valve sensor are then filled with layers in various embodiments of the invention to complete the spin valve sensor.
摘要翻译：底部自旋阀传感器或顶部自旋阀传感器的第一和第二侧表面被切口，以便能够将传感器的侧部的磁阻系数降低到轨道宽度区域之外，从而最小化传感器的侧面读数。然后，在本发明的各种实施例中，自旋阀传感器的第一和第二缺口填充层以完成自旋阀传感器。

5. 发明授权

US06306266B1 Method of making a top spin valve sensor with an in-situ formed seed layer structure for improving sensor performance 失效
标题翻译：制造具有原位形成的种子层结构的顶部自旋阀传感器以提高传感器性能的方法
公开(公告)号：US06306266B1
公开(公告)日：2001-10-23
申请号：US09574682
申请日：2000-05-17
申请人： Serhat Metin , Mustafa Pinarbasi , Patrick Rush Webb
发明人： Serhat Metin , Mustafa Pinarbasi , Patrick Rush Webb
IPC分类号： C23C1434
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , G11B2005/3996
摘要： A method constructs first and second seed layers of a seed layer structure in-situ for a top spin valve sensor for increasing magnetoresistive coefficient dr/R of the sensor, reducing a ferromagnetic coupling field HFC between pinned and free layers of the sensor and reducing coercivity HC of the free layer. The first layer, which is aluminum oxide (Al2O3), is ion beam sputter deposited on a first shield layer in a sputtering chamber under a specified pressure. The second seed layer, which is nickel oxide based, is deposited on the first seed layer by ion beam sputter deposition without breaking the vacuum of the chamber. The free layer is then directly deposited on the second seed layer followed by formation of the remainder of the layers of the spin valve sensor. In one embodiment of the invention a read gap layer and the first seed layer are located between a first shield layer and the second seed layer while in the second embodiment of the invention the first seed layer is the only layer between the first shield layer and the second seed layer.
摘要翻译：一种方法为顶部自旋阀传感器原位构建种子层结构的第一种子层和第二种子层，用于增加传感器的磁阻系数dr / R，从而减小传感器的固定层和自由层之间的铁磁耦合场HFC，并降低矫顽力 HC的自由层。作为氧化铝（Al 2 O 3）的第一层是在特定压力下溅射沉积在溅射室中的第一屏蔽层上的离子束。基于氧化镍的第二种子层通过离子束溅射沉积而沉积在第一籽晶层上，而不破坏室的真空。然后将自由层直接沉积在第二种子层上，随后形成自旋阀传感器的其余层。在本发明的一个实施例中，读间隙层和第一种子层位于第一屏蔽层和第二种子层之间，而在本发明的第二实施例中，第一种子层是第一屏蔽层和第二屏蔽层之间的唯一层第二种子层。

6. 发明授权

US07228618B2 Method for fabricating a magnetic head 有权
标题翻译：磁头制造方法
公开(公告)号：US07228618B2
公开(公告)日：2007-06-12
申请号：US10970632
申请日：2004-10-20
申请人： Mustafa Pinarbasi , Patrick Rush Webb
发明人： Mustafa Pinarbasi , Patrick Rush Webb
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49067
摘要： A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 Å and the PtMn layer has a thickness of approximately 120 Å. An alternative fabrication process of the Si layer includes the overdeposition of the layer to a first thickness of from 15 Å to 45 Å followed by the etching back of the seed layer of approximately 5 Å to approximately 15 Å to its desired final thickness of approximately 20 Å. The Si layer results in an improved crystal structure to the subsequently fabricated PtMn and other spin valve sensor layers, such that the fabricated spin valve is thinner and exhibits increased ΔR/R and reduced coercivity.
摘要翻译：具有自旋阀传感器的磁头，其使用随后制造PtMn自旋阀传感器层结构的Al 2 O 3 N，NiMnO，Si种子层制造。在优选实施例中，Si层的厚度约为20埃，PtMn层的厚度约为120埃。 Si层的替代制造工艺包括将该层过度沉积到第一厚度为从Å至Å至的第一厚度，接着将种子层的蚀刻回到大约5至大约15至所期望的最终厚度约为20 一个。 Si层导致随后制备的PtMn和其它自旋阀传感器层的改进的晶体结构，使得制造的自旋阀更薄并且表现出增加的DeltaR / R和降低的矫顽力。

7. 发明授权

US07061729B2 Protective cap in lead overlay magnetic sensors 失效
公开(公告)号：US07061729B2
公开(公告)日：2006-06-13
申请号：US10150314
申请日：2002-05-16
申请人： James Mac Freitag , Mustafa Pinarbasi , Patrick Rush Webb
发明人： James Mac Freitag , Mustafa Pinarbasi , Patrick Rush Webb
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3909 , G11B2005/3996
摘要： A lead overlay magnetic sensor for use in a disk drive is provided having a protective cap layer disposed between the electrical leads and the sensor. The protective cap layer is preferably formed from ruthenium, rhodium, or other suitable material. The sensors thus formed have low resistance between the electrical leads and the sensor and also have well defined magnetic trackwidths.

8. 发明授权

US06996894B2 Methods of making magnetic heads with improved contiguous junctions 失效
标题翻译：制造具有改进的连续结的磁头的方法
公开(公告)号：US06996894B2
公开(公告)日：2006-02-14
申请号：US10109110
申请日：2002-03-28
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Mustafa Pinarbasi , Patrick Rush Webb
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Mustafa Pinarbasi , Patrick Rush Webb
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Methods of making a read head with improved contiguous junctions are described. After sensor layer materials are deposited over a substrate, a lift-off mask is formed over the sensor layer materials in a central region which is surrounded by end regions. Ion milling is performed with use of the lift-off mask such that the sensor layer materials in the end regions are removed and those in the central region remain to form a read sensor. A high-angle ion mill (e.g. between 45–80 degrees) is then performed to remove redeposited material from side walls of the lift-off mask. Next, a reactive ion etch (RIE) is used to reduce the thickness and the width of the lift-off mask and to remove capping layer materials from the top edges of the read sensor. With the reduced-size lift-off mask in place, hard bias and lead layers are deposited adjacent the read sensor as well as over the mask. The reduced-size lift-off mask allows the amount of hard bias to be increased in the contiguous junction region, and the edges of the leads to be deposited more closely over the top edges of the read sensor. Advantageously, the stability of the sensor is enhanced and the transfer curve is improved using a method which can be controlled independently from the initial mask structure and ion milling process. No critical alignments or multiple photoresist processes are necessary.
摘要翻译：描述了制造具有改进的连续结的读取头的方法。在传感器层材料沉积在衬底上之后，在由端部区域包围的中心区域中的传感器层材料上形成剥离掩模。使用剥离掩模进行离子铣削，使得端部区域中的传感器层材料被去除，并且在中心区域中的传感器层材料保持形成读取传感器。然后执行高角度离子磨（例如在45-80度之间）以从剥离掩模的侧壁去除再沉积的材料。接下来，使用反应离子蚀刻（RIE）来减小剥离掩模的厚度和宽度，并从读取传感器的顶部边缘去除封盖层材料。随着尺寸减小的剥离掩模就位，硬读取传感器以及掩模附近沉积了硬偏置和引线层。缩小尺寸的剥离掩模允许在连续接合区域中增加硬偏置的量，并且引线的边缘更紧密地沉积在读取传感器的顶部边缘上。有利地，增强了传感器的稳定性，并且使用可以独立于初始掩模结构和离子铣削过程进行控制的方法来提高传递曲线。不需要临界对准或多个光刻胶工艺。

9. 发明申请

US20120318319A1 METHODS OF INTERCONNECTING THIN FILM SOLAR CELLS 审中-公开
标题翻译：互膜薄膜太阳能电池的方法
公开(公告)号：US20120318319A1
公开(公告)日：2012-12-20
申请号：US13253921
申请日：2011-10-05
申请人： Mustafa Pinarbasi , Burak Metin
发明人： Mustafa Pinarbasi , Burak Metin
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/0201 , H01L31/0504 , Y02E10/50
摘要： A photovoltaic module comprises a first group of solar cells; a second group of solar cells; a first interconnection member extending across a first surface of the first group of solar cells and across a first surface of the second group of solar cells to connect the first and second groups of solar cells in parallel; and a second interconnection member extending across a second surface of the first group of solar cells and across a second surface of the second group of solar cells.
摘要翻译：光伏模块包括第一组太阳能电池; 第二组太阳能电池; 第一互连构件，其横跨第一组太阳能电池的第一表面延伸并穿过第二组太阳能电池的第一表面，以平行地连接第一和第二组太阳能电池; 以及横跨第一组太阳能电池的第二表面并跨越第二组太阳能电池的第二表面延伸的第二互连部件。

10. 发明授权

US08318530B2 Solar cell buffer layer having varying composition 失效
标题翻译：具有不同组成的太阳能电池缓冲层
公开(公告)号：US08318530B2
公开(公告)日：2012-11-27
申请号：US12843778
申请日：2010-07-26
申请人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
发明人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
IPC分类号： H01L21/00
CPC分类号： H01L31/206 , C23C18/12 , C23C18/1204 , C23C18/125 , H01L31/022475 , H01L31/022483 , H01L31/0322 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.
摘要翻译：描述了一种连续的无电沉积方法，并且提供了通过其厚度形成具有不同组成的太阳能电池缓冲层的系统。通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于一对一的滚动时尚。在另一个实例中，包括第一透明导电膜如铝掺杂氧化锌和第二透明导电膜如氧化铟锡的透明导电层沉积在具有不同组成的缓冲层上。

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