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    • 2. 发明授权
    • Automatic plasma processing device and heat treatment device
    • 自动等离子处理装置和热处理装置
    • US4550239A
    • 1985-10-29
    • US424503
    • 1982-09-27
    • Akira UeharaIsamu HijikataHisashi NakaneMuneo Nakayama
    • Akira UeharaIsamu HijikataHisashi NakaneMuneo Nakayama
    • B65G49/07H01L21/677B23K9/00
    • H01L21/67778H01L21/67781Y10S156/912Y10S414/137Y10S414/14
    • An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.
    • 一种具有基本上垂直设置的等离子体室的自动等离子体处理装置,其中多个半导体晶片可以与等离子体同时处理。 自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒,用于从盒中一个接一个地取出晶片并用于馈送的馈送机构,用于从该盒子一个接一个地接收晶片的保持框架 进给机构并保持在其中的驱动机构,用于使保持框架上下移入等离子体室的驱动机构,用于在等离子体室中产生等离子体的等离子体产生机构,以及用于控制上述机构的控制系统。 该装置的结构简化,并且可以自动并连续地处理大量的晶片,同时具有紧凑的结构。
    • 7. 发明授权
    • Automatic plasma processing device and heat treatment device for batch
treatment of workpieces
    • 自动等离子处理装置和热处理装置,用于批量处理工件
    • US4550242A
    • 1985-10-29
    • US424287
    • 1982-09-27
    • Akira UeharaIsamu HijikataHisashi NakaneMuneo Nakayama
    • Akira UeharaIsamu HijikataHisashi NakaneMuneo Nakayama
    • H01L21/677B23K9/00
    • H01L21/67781H01L21/67778Y10S156/912Y10S414/137
    • An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.
    • 一种具有基本垂直设置的等离子体室的自动等离子体处理装置,其中多个半导体晶片同时被等离子体处理。 该装置包括适于在其中容纳多个晶片的容器盒,用于将盒子进给到预定位置的进给机构,用于从放置在预定位置的盒子取出晶片的替换机构,可操作以接收 来自替换机构的晶片并保持在其中,用于将保持框架上下移入和移出等离子体室的驱动机构,用于在等离子体室中产生等离子体的等离子体产生机构,以及用于控制 上述机制。 自动等离子体处理装置具有简化的结构,并且自动并连续地处理大量晶片,同时紧凑。