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1. 外观设计

USD291413S Wafer holding frame 失效
公开(公告)号：USD291413S
公开(公告)日：1987-08-18
申请号：US689661
申请日：1985-01-08
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
设计人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama

2. 发明授权

US4550239A Automatic plasma processing device and heat treatment device 失效
标题翻译：自动等离子处理装置和热处理装置
公开(公告)号：US4550239A
公开(公告)日：1985-10-29
申请号：US424503
申请日：1982-09-27
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
发明人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
IPC分类号： B65G49/07 , H01L21/677 , B23K9/00
CPC分类号： H01L21/67778 , H01L21/67781 , Y10S156/912 , Y10S414/137 , Y10S414/14
摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.
摘要翻译：一种具有基本上垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片可以与等离子体同时处理。自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒，用于从盒中一个接一个地取出晶片并用于馈送的馈送机构，用于从该盒子一个接一个地接收晶片的保持框架进给机构并保持在其中的驱动机构，用于使保持框架上下移入等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机构的控制系统。该装置的结构简化，并且可以自动并连续地处理大量的晶片，同时具有紧凑的结构。

3. 发明授权

US4550242A Automatic plasma processing device and heat treatment device for batch treatment of workpieces 失效
标题翻译：自动等离子处理装置和热处理装置，用于批量处理工件
公开(公告)号：US4550242A
公开(公告)日：1985-10-29
申请号：US424287
申请日：1982-09-27
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
发明人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
IPC分类号： H01L21/677 , B23K9/00
CPC分类号： H01L21/67781 , H01L21/67778 , Y10S156/912 , Y10S414/137
摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.
摘要翻译：一种具有基本垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片同时被等离子体处理。该装置包括适于在其中容纳多个晶片的容器盒，用于将盒子进给到预定位置的进给机构，用于从放置在预定位置的盒子取出晶片的替换机构，可操作以接收来自替换机构的晶片并保持在其中，用于将保持框架上下移入和移出等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机制。自动等离子体处理装置具有简化的结构，并且自动并连续地处理大量晶片，同时紧凑。

4. 发明授权

US4483651A Automatic apparatus for continuous treatment of leaf materials with gas plasma 失效
标题翻译：用气体等离子体连续处理叶片材料的自动装置
公开(公告)号：US4483651A
公开(公告)日：1984-11-20
申请号：US292417
申请日：1981-08-13
申请人： Hisashi Nakane , Akira Uehara , Shigekazu Miyazaki , Hiroyuki Kiyota , Isamu Hijikata
发明人： Hisashi Nakane , Akira Uehara , Shigekazu Miyazaki , Hiroyuki Kiyota , Isamu Hijikata
IPC分类号： H01L21/302 , B65G47/53 , B65G47/64 , B65G49/07 , H01L21/3065 , B65G47/24
CPC分类号： B65G47/54 , B65G47/643 , Y10S414/139
摘要： The invention provides a novel automatic apparatus for the continuous treatment of wafer materials, e.g. of silicon semiconductor, with gas plasma provided with a plural number of the gas plasma reaction chambers, transfer devices for bringing the wafer materials into and out of each of the reaction chambers and automatic control mechanism for controlling the individual parts of the apparatus in linkage operation. The transfer devices are composed of a main transfer conveyor extending in parallel with the array of the reaction chambers and over whole length of the array, a plural number of branched transfer conveyors each connecting one of the reaction chambers with the main transfer conveyor, a mechanism for transferring the wafer between the main transfer conveyor and one of the branched transfer conveyor and a mechanism for bringing the wafer material from the branched transfer conveyor to the gas plasma reaction chamber or vice versa. Transferring and gas plasma treatment of the wafer materials can be performed in continuous and successive linkage operations by virtue of the automatic control mechanism. The inventive apparatus is very advantageous in the continuous and concurrent handling of a plural number of wafer materials in the process of the gas plasma treatment so that excellent productivity of the process and highly uniform quality of the treated wafer materials are ensured.
摘要翻译：本发明提供了一种用于连续处理晶片材料的新型自动装置，例如，的硅半导体，其中具有多个气体等离子体反应室的气体等离子体，用于将晶片材料进出每个反应室的转移装置和用于在联动操作中控制装置的各个部件的自动控制机构。传送装置由与反应室的阵列平行延伸并且在整个长度上的主传送输送机组成，多个分支传送输送机将每个反应室中的一个连接到主传送输送机，一个机构用于在主传送输送机和分支传送输送机之一之间传送晶片，以及用于将晶片材料从分支转移输送器引入气体等离子体反应室的机构，反之亦然。可以通过自动控制机构在连续和连续的连动操作中进行晶片材料的转移和气体等离子体处理。本发明的装置在气体等离子体处理过程中连续和同时处理多个晶片材料是非常有利的，因此确保了处理的优异的生产率和经过处理的晶片材料的高度均匀的质量。

5. 发明授权

US4578559A Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US4578559A
公开(公告)日：1986-03-25
申请号：US649164
申请日：1984-09-10
申请人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
发明人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
IPC分类号： C23F4/00 , C03C15/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B23K9/00 , H01L21/306
CPC分类号： H01J37/32431 , C03C15/00
摘要： A plasma etching method employing a parallel-plate type plasma etching device which comprises a reaction chamber, a substantially plate-like ground electrode and a substantially plate-like counter electrode both disposed in parallel with each other within the reaction chamber. The method includes the steps of placing a material to be etched on the ground electrode and carrying out an electric discharge with a spacing between the electrodes being substantially 3 to 10 mm. Etching is performed exactly at a high speed in an anisotropic form without requiring a high degree of vacuum.
摘要翻译：使用平行板式等离子体蚀刻装置的等离子体蚀刻方法，其包括在反应室内彼此平行地设置的反应室，大致板状的接地电极和大致板状的对电极。该方法包括以下步骤：将待蚀刻的材料放置在接地电极上，并执行电极间间隔大致为3至10mm的放电。蚀刻完全以各向异性形式的高速完成，而不需要高度的真空度。

6. 发明授权

US4465553A Method for dry etching of a substrate surface 失效
标题翻译：用于干蚀刻衬底表面的方法
公开(公告)号：US4465553A
公开(公告)日：1984-08-14
申请号：US551898
申请日：1983-11-15
申请人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
发明人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： The invention provides a method for fine pattern-wise etching of a surface layer on a substrate such as semiconductor silicon wafers in a dry process by use of a gaseous mixture of pentafluorochloroethane and sulfur hexafluoride as the etching gas to support the plasma atmosphere. The inventive method is advantageous in the compatibility of the requirements for a large etching rate and a high precision of the fine patterning in contrast to the generally accepted understanding that these two requirements are not compatible with each other since an etching gas having a high etching rate causes remarkable side etching to decrease the precision of the desired patterning.
摘要翻译：本发明提供一种通过使用五氟氯乙烷和六氟化硫的气体混合物作为蚀刻气体在干法中在诸如半导体硅晶片的基板上精细图案化蚀刻表面层以支持等离子体气氛的方法。本发明的方法在与蚀刻速率高的蚀刻气体之间相互不兼容的普遍接受的理解中，与蚀刻速率大的精度要求和高精度图案化的要求相兼容，导致显着的侧面蚀刻以降低所需图案的精度。

7. 发明授权

US4318767A Apparatus for the treatment of semiconductor wafers by plasma reaction 失效
标题翻译：用于通过等离子体反应处理半导体晶片的装置
公开(公告)号：US4318767A
公开(公告)日：1982-03-09
申请号：US208845
申请日：1980-11-20
申请人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
发明人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
IPC分类号： H01L21/302 , C23C14/56 , C23C16/54 , H01L21/3065 , H01L21/677 , C23F1/02
CPC分类号： H01L21/67748 , C23C14/566 , C23C16/54 , Y10S414/137 , Y10S414/139
摘要： An apparatus for the treatment of semiconductor wafers by plasma reaction is disclosed. The apparatus comprises a first wafer carrying means for a wafer to be treated, a reaction chamber, a second wafer carrying means for a treated wafer, and a control means for driving respective elements thereof in linkage motion. The first wafer carrying means has a first arm type wafer carrying means, which comprises a pair of guide rails, a pair of sliders mounted on the guide rails, respectively, and a pair of first arms for carrying the wafer to be treated. The reaction chamber is provided with a pair of slits for taking the wafer into and out of the reaction chamber, a pair of open-close type vacuum sealing devices mounted on the slits, respectively. Similarly, the second wafer carrying means has a second arm type wafer carrying means. The first and second wafer carrying means are preferably placed in a preliminary vacuum chamber, whereby a high vacuum in the reaction chamber can readily be obtained to be suitable for use in an etching device for aluminum wiring, and the like.
摘要翻译：公开了一种通过等离子体反应处理半导体晶片的装置。该装置包括用于待处理晶片的第一晶片承载装置，反应室，用于经处理的晶片的第二晶片承载装置，以及用于驱动其相应元件连动运动的控制装置。第一晶片承载装置具有第一臂型晶片承载装置，其包括一对导轨，分别安装在导轨上的一对滑块和用于承载待处理晶片的一对第一臂。反应室设有用于将晶片进出反应室的一对狭缝，分别安装在狭缝上的一对开 - 闭式真空密封装置。类似地，第二晶片承载装置具有第二臂型晶片承载装置。第一和第二晶片承载装置优选地放置在初级真空室中，由此可以容易地获得反应室中的高真空度，以适合用于铝布线的蚀刻装置等。

8. 发明授权

US4694040A Liquid composition for forming a coating film of organopolysiloxane and method for the preparation thereof 失效
标题翻译：用于形成有机聚硅氧烷的涂膜的液体组合物及其制备方法
公开(公告)号：US4694040A
公开(公告)日：1987-09-15
申请号：US902029
申请日：1986-08-25
申请人： Akira Hashimoto , Toshihiro Nishimura , Muneo Nakayama , Hisashi Nakane , Shozo Toda
发明人： Akira Hashimoto , Toshihiro Nishimura , Muneo Nakayama , Hisashi Nakane , Shozo Toda
IPC分类号： C08G77/00 , C08G77/06 , C09D183/04 , C09D183/14 , C08K5/05
CPC分类号： C09D183/14
摘要： The invention provides a novel means for providing a highly heat-resistant and corrosion-resistant coating film on the surface of a substrate such as a semiconductor silicon wafer or glass plate by coating the surface with a liquid coating composition which is a solution of an oligomeric organopolysiloxane as a partial dehydration-condensation product of a monohydrocarbylsilane triol RSi(OH).sub.3, optionally, with admixture of a dihydrocarbylsilane diol R.sub.2 Si(OH).sub.2, R being a monovalent hydrocarbon group, e.g. methyl or phenyl, in an organic solvent followed by baking of the coated substrate to convert the coating layer into a cured resin film.
摘要翻译：本发明提供了一种用于通过用液体涂料组合物涂覆表面而在诸如半导体硅晶片或玻璃板的基材的表面上提供高耐热和耐腐蚀的涂膜的新颖方法，该液体涂料组合物是低聚物作为单烃基硅烷三醇RSi（OH）3的部分脱水缩合产物的有机聚硅氧烷，任选地与二烃基硅烷二醇R2Si（OH）2的混合物，R是一价烃基，例如甲基或苯基，然后烘烤涂布的基材，将涂层转化为固化的树脂膜。

9. 发明授权

US4277525A Liquid compositions for forming silica coating films 失效
标题翻译：用于形成二氧化硅涂膜的液体组合物
公开(公告)号：US4277525A
公开(公告)日：1981-07-07
申请号：US133092
申请日：1980-03-24
申请人： Muneo Nakayama , Toshihiro Nishimura , Hisashi Nakane , Shozo Toda , Yoshio Hotta , Mitsuaki Minato
发明人： Muneo Nakayama , Toshihiro Nishimura , Hisashi Nakane , Shozo Toda , Yoshio Hotta , Mitsuaki Minato
IPC分类号： C08G77/00 , C08G77/02 , C08G77/06 , C09D183/00 , C09D183/02 , C09D183/04 , C09D183/14 , B05D3/02
CPC分类号： C09D183/14 , C09D183/02 , C09D183/04
摘要： Liquid compositions suitable for providing silica-based coating films on to various substrate surfaces are prepared by the reaction of an alkoxy-containing silane, a lower carboxylic acid and an alcohol in the presence of a reaction accelerator which is an organic acid different from the above mentioned lower carboxylic acid. The reaction proceeds very smoothly even in the absence of any halogen-containing compounds, and the resultant liquid coating compositions are free from the problem of corrosion due to the presence of a halogen-containing ingredient.
摘要翻译：适用于在各种基材表面上提供二氧化硅基涂膜的液体组合物是通过含有烷氧基的硅烷，低级羧酸和醇在与上述不同的有机酸的反应促进剂存在下反应来制备的提到的低级羧酸。即使不存在任何含卤素化合物，反应也非常顺利，所得到的液体涂料组合物由于含卤素成分的存在而没有腐蚀的问题。

10. 发明授权

US4268539A Liquid coating composition for forming transparent conductive films and a coating process for using said composition 失效
标题翻译：用于形成透明导电膜的液体涂料组合物和使用所述组合物的涂布方法
公开(公告)号：US4268539A
公开(公告)日：1981-05-19
申请号：US960652
申请日：1978-11-14
申请人： Muneo Nakayama , Toshihiro Nishimura , Akira Hashimoto , Hisashi Nakane , Teruo Kimura
发明人： Muneo Nakayama , Toshihiro Nishimura , Akira Hashimoto , Hisashi Nakane , Teruo Kimura
IPC分类号： C03C17/25 , C03C17/27 , C04B41/50 , H01B1/08 , H01B13/00 , B05D5/12 , B05D1/02 , B05D3/02 , C03C17/23
CPC分类号： C04B41/5009 , C03C17/27 , H01B1/08 , C03C2217/215 , C03C2218/11 , C03C2218/322
摘要： A liquid coating composition for formation of a transparent conductive film, which comprises a solution of indium nitrate in a .beta.-diketone or a mixture of a .beta.-diketone and another organic solvent or a reaction product of indium nitrate with a .beta.-diketone, an activator and an organic solvent other than a .beta.-diketone, is disclosed.When this coating composition is coated on a substrate and the coated substrate is heat-treated at a temperature higher than about 350.degree. C., there can be obtained a transparent conductive film having excellent transparency, electrical conductivity and mechanical strength.
摘要翻译：用于形成透明导电膜的液体涂料组合物，其包含硝酸铟在β-二酮或β-二酮与另一种有机溶剂的混合物中的溶液或硝酸铟与β-二酮的反应产物，活化剂和除β-二酮以外的有机溶剂。当将这种涂料组合物涂覆在基材上并且涂覆的基材在高于约350℃的温度下进行热处理时，可以获得具有优异的透明性，导电性和机械强度的透明导电膜。

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