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1. 发明申请

US20100219512A1 Method for Forming Porous Insulating Film and Semiconductor Device 有权
标题翻译：多孔绝缘膜和半导体器件的形成方法
公开(公告)号：US20100219512A1
公开(公告)日：2010-09-02
申请号：US11991745
申请日：2006-09-08
申请人： Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
发明人： Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
IPC分类号： H01L23/29 , H01L21/47
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31695 , H01L21/76807 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2221/1036 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A method for forming porous insulating film using cyclic siloxane raw material monomer is provided, which method suppresses detachment of hydrocarbon and is able to form a low-density film.In a method where at least cyclic organosiloxane raw material 101 is supplied to a reaction chamber and an insulating film is formed by plasma vapor deposition method, above-mentioned problem is solved by a method for a forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material 101 and a compound raw material 103 including a part of chemical structure comprising the cyclic organosiloxane raw material 101. The compound raw material 103 is preferably a compound including a part of side chain of the cyclic organosiloxane raw material 101.
摘要翻译：提供了使用环状硅氧烷原料单体形成多孔绝缘膜的方法，该方法抑制烃的分离并能够形成低密度膜。在通过等离子体气相沉积法将至少环状有机硅氧烷原料101供给到反应室并形成绝缘膜的方法中，上述问题通过使用以下的混合气体形成多孔绝缘膜的方法来解决：环状有机硅氧烷原料101和包含环状有机硅氧烷原料101的化学结构的一部分的复合原料103.化合物原料103优选为包含环状有机硅氧烷原料101的侧链的一部分的化合物。

2. 发明授权

US08715791B2 Method for forming porous insulating film and semiconductor device 有权
标题翻译：多孔绝缘膜形成方法及半导体装置
公开(公告)号：US08715791B2
公开(公告)日：2014-05-06
申请号：US11991745
申请日：2006-09-08
申请人： Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
发明人： Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
IPC分类号： C23C16/00
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31695 , H01L21/76807 , H01L21/76835 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2221/1036 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A method for forming porous insulating film using cyclic siloxane raw material monomer, includes forming porous insulating film using the mixed gas of a cyclic organosiloxane raw material and a compound raw material including a part of chemical structure including the cyclic organosiloxane raw material. The compound raw material may include a compound including a part of side chain of the cyclic organosiloxane raw material.
摘要翻译：使用环状硅氧烷原料单体形成多孔绝缘膜的方法包括使用环状有机硅氧烷原料的混合气体和包含部分包含环状有机硅氧烷原料的化学结构的复合原料来形成多孔绝缘膜。复合原料可以包括包含环状有机硅氧烷原料的侧链的一部分的化合物。

3. 发明授权

US07923384B2 Formation method of porous insulating film, manufacturing apparatus of semiconductor device, manufacturing method of semiconductor device, and semiconductor device 有权
标题翻译：多孔绝缘膜的形成方法，半导体装置的制造装置，半导体装置的制造方法以及半导体装置
公开(公告)号：US07923384B2
公开(公告)日：2011-04-12
申请号：US12085469
申请日：2006-11-24
申请人： Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
发明人： Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3122 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31695 , H01L21/76807 , H01L21/76829 , H01L21/76835 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： In a formation method of a porous insulating film by supplying at least organosiloxane and an inert gas to a reaction chamber and forming an insulating film by a plasma vapor deposition method, a partial pressure of the organosiloxane in the reaction chamber is changed by varying a volume ratio of the organosiloxane and the inert gas to be supplied during deposition. Thus, the dielectric constant of the insulating film in the semiconductor device is reduced while the adhesion of the insulating film with other materials is improved. It is desirable that the organosiloxane be cyclic organosiloxane including at least silicon, oxygen, carbon, and hydrogen, and that the total pressure of the reaction chamber be constant during deposition.
摘要翻译：在通过向反应室供给至少有机硅氧烷和惰性气体并通过等离子体气相沉积法形成绝缘膜的多孔绝缘膜的形成方法中，反应室中的有机硅氧烷的分压通过改变体积有机硅氧烷和沉积期间供应的惰性气体的比例。因此，半导体器件中的绝缘膜的介电常数降低，同时绝缘膜与其它材料的粘附性得到改善。期望有机硅氧烷是至少包括硅，氧，碳和氢的环状有机硅氧烷，并且反应室的总压力在沉积期间是恒定的。

4. 发明申请

US20090039474A1 Formation Method of Porous Insulating Film, Manufacturing Apparatus of Semiconductor Device, Manufacturing Method of Semiconductor Device, and Semiconductor Device 有权
标题翻译：多孔绝缘膜的形成方法，半导体器件的制造装置，半导体器件的制造方法和半导体器件
公开(公告)号：US20090039474A1
公开(公告)日：2009-02-12
申请号：US12085469
申请日：2006-11-24
申请人： Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
发明人： Munehiro Tada , Naoya Furutake , Tsuneo Takeuchi , Yoshihiro Hayashi
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L21/3122 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/02362 , H01L21/31695 , H01L21/76807 , H01L21/76829 , H01L21/76835 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： In a formation method of a porous insulating film by supplying at least organosiloxane and an inert gas to a reaction chamber and forming an insulating film by a plasma vapor deposition method, a partial pressure of the organosiloxane in the reaction chamber is changed by varying a volume ratio of the organosiloxane and the inert gas to be supplied during deposition. Thus, the dielectric constant of the insulating film in the semiconductor device is reduced while the adhesion of the insulating film with other materials is improved. It is desirable that the organosiloxane be cyclic organosiloxane including at least silicon, oxygen, carbon, and hydrogen, and that the total pressure of the reaction chamber be constant during deposition.
摘要翻译：在通过向反应室供给至少有机硅氧烷和惰性气体并通过等离子体气相沉积法形成绝缘膜的多孔绝缘膜的形成方法中，反应室中的有机硅氧烷的分压通过改变体积有机硅氧烷和沉积期间供应的惰性气体的比例。因此，半导体器件中的绝缘膜的介电常数降低，同时绝缘膜与其它材料的粘附性得到改善。期望有机硅氧烷是至少包括硅，氧，碳和氢的环状有机硅氧烷，并且反应室的总压力在沉积期间是恒定的。

5. 发明申请

US20080251926A1 Method of Fabricating Organic Silicon Film, Semiconductor Device Including the Same, and Method of Fabricating the Semiconductor Device 有权
标题翻译：制造有机硅膜的方法，包括其的半导体器件以及制造半导体器件的方法
公开(公告)号：US20080251926A1
公开(公告)日：2008-10-16
申请号：US11884713
申请日：2006-02-14
申请人： Munehiro Tada , Tsuneo Takeuchi , Yoshihiro Hayashi
发明人： Munehiro Tada , Tsuneo Takeuchi , Yoshihiro Hayashi
IPC分类号： H01L23/532 , C08J7/18 , H01L21/768
CPC分类号： H01L21/3121 , B05D1/62 , C09D4/00 , C23C16/325 , C23C16/401 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/3148 , H01L21/76801 , C08G77/04
摘要： An organic silicon film is formed by carrying out chemical vapor deposition with organic silicon compound being used as a raw material gas. The organic silicon compound contains at least silicon, hydrogen and carbon as a constituent thereof, and contains two or more groups having unsaturated bond, per a molecule thereof. The organic silicon compound is used in mixture with a silicon hydride gas.
摘要翻译：通过用有机硅化合物作为原料气体进行化学气相沉积形成有机硅膜。有机硅化合物至少含有硅，氢和碳作为其成分，并且每分子含有两个以上具有不饱和键的基团。有机硅化合物与氢化硅气体混合使用。

6. 发明授权

US08084294B2 Method of fabricating organic silicon film, semiconductor device including the same, and method of fabricating the semiconductor device 有权
标题翻译：制造有机硅膜的方法，包括该有机硅膜的半导体器件以及制造该半导体器件的方法
公开(公告)号：US08084294B2
公开(公告)日：2011-12-27
申请号：US11884713
申请日：2006-02-14
申请人： Munehiro Tada , Tsuneo Takeuchi , Yoshihiro Hayashi
发明人： Munehiro Tada , Tsuneo Takeuchi , Yoshihiro Hayashi
IPC分类号： H01L51/40
CPC分类号： H01L21/3121 , B05D1/62 , C09D4/00 , C23C16/325 , C23C16/401 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/3148 , H01L21/76801 , C08G77/04
摘要： An organic silicon film is formed by carrying out chemical vapor deposition with organic silicon compound being used as a raw material gas. The organic silicon compound contains at least silicon, hydrogen and carbon as a constituent thereof, and contains two or more groups having unsaturated bond, per a molecule thereof. The organic silicon compound is used in mixture with a silicon hydride gas.
摘要翻译：通过用有机硅化合物作为原料气体进行化学气相沉积形成有机硅膜。有机硅化合物至少含有硅，氢和碳作为其成分，并且每分子含有两个以上具有不饱和键的基团。有机硅化合物与氢化硅气体混合使用。

7. 发明授权

US6004839A Semiconductor device with conductive plugs 失效
标题翻译：带导电插头的半导体器件
公开(公告)号：US6004839A
公开(公告)日：1999-12-21
申请号：US804112
申请日：1997-02-20
申请人： Yoshihiro Hayashi , Nobuhiro Tanabe , Tsuneo Takeuchi , Shinobu Saito
发明人： Yoshihiro Hayashi , Nobuhiro Tanabe , Tsuneo Takeuchi , Shinobu Saito
IPC分类号： H01L21/768 , H01L21/8242 , H01L21/8246 , H01L21/8238
CPC分类号： H01L27/11502 , H01L21/768 , H01L27/10844 , H01L27/10852 , H01L27/11507
摘要： In a method of manufacturing a semiconductor device, a CMOS section composed of an N-channel MOS transistor and a P-channel MOS transistor and a memory section composed of at least a transfer gate MOS transistor is formed on a substrate. A plurality of conductive plugs is formed to penetrate a laminate insulating film to the MOS transistors. The laminate insulating film is composed of a first insulating film and a second insulating film. A capacitor section is formed on the laminate insulating film and the capacitor section is composed of an upper electrode, a dielectric film and a lower electrode. A third insulating film is formed on the laminate insulating film and the capacitor section. A wiring pattern is formed on the third insulating film to partially penetrate the second insulating film connect to the plurality of conductive plugs. A wiring pattern may be disposed in the laminate insulating film to connect at least two of the plurality of conductive plugs.
摘要翻译：在制造半导体器件的方法中，在衬底上形成由N沟道MOS晶体管和P沟道MOS晶体管组成的CMOS部分和至少由传输门MOS晶体管组成的存储部分。形成多个导电插塞以穿透层压绝缘膜到MOS晶体管。层叠绝缘膜由第一绝缘膜和第二绝缘膜构成。在层叠绝缘膜上形成电容器部，电容部由上部电极，电介质膜和下部电极构成。在层压绝缘膜和电容器部分上形成第三绝缘膜。在第三绝缘膜上形成布线图案，以部分地穿透连接到多个导电插塞的第二绝缘膜。布线图案可以布置在层压绝缘膜中以连接多个导电插塞中的至少两个。

8. 发明授权

US06281536B1 Ferroelectric memory device with improved ferroelectric capacity characteristic 有权
标题翻译：具有改进的铁电容量特性的铁电存储器件
公开(公告)号：US06281536B1
公开(公告)日：2001-08-28
申请号：US09287413
申请日：1999-04-07
申请人： Sota Shinohara , Kazushi Amanuma , Yukinobu Murao , Yuukoh Katoh , Tsuneo Takeuchi , Yoshihiro Hayashi
发明人： Sota Shinohara , Kazushi Amanuma , Yukinobu Murao , Yuukoh Katoh , Tsuneo Takeuchi , Yoshihiro Hayashi
IPC分类号： H01L2972
CPC分类号： H01L27/11502 , H01L28/55
摘要： A ferroelectric memory device includes a ferroelectric capacitance element formed through an insulating film on a semiconductor substrate. The ferroelectric capacitance element includes a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film. The upper electrode has a laminate structure which contains a conductive oxide layer of first metal which is connected with the ferroelectric film.
摘要翻译：铁电存储器件包括通过半导体衬底上的绝缘膜形成的铁电电容元件。铁电电容元件包括下电极，形成在下电极上的铁电膜和形成在铁电体膜上的上电极。上部电极具有包含与铁电体膜连接的第一金属的导电性氧化物层的层叠结构。

9. 发明申请

US20110318926A1 Wiring structure, semiconductor device and manufacturing method thereof 有权
标题翻译：接线结构，半导体器件及其制造方法
公开(公告)号：US20110318926A1
公开(公告)日：2011-12-29
申请号：US13137622
申请日：2011-08-30
申请人： Fuminori Ito , Yoshihiro Hayashi , Tsuneo Takeuchi
发明人： Fuminori Ito , Yoshihiro Hayashi , Tsuneo Takeuchi
IPC分类号： H01L21/302
CPC分类号： H01L21/76825 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02304 , H01L21/02348 , H01L21/02351 , H01L21/02362 , H01L21/31695 , H01L21/76804 , H01L21/76807 , H01L21/76814 , H01L21/7682 , H01L21/76829 , H01L21/76831 , H01L21/76834 , H01L21/76835 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device manufacturing method for manufacturing a semiconductor device having a transistor mounted in a wiring of a plural-layer structure includes in manufacturing the semiconductor device that is formed on a semiconductor element and includes a barrier insulating film, a porous interlayer insulating film, a wiring, a via plug formed by embedding a metal wiring material in a wiring trench, and a via hole formed in the porous interlayer insulating film, irradiating an electron beam or an ultraviolet ray onto at least a portion of the porous interlayer insulating film before forming an opening in the barrier insulating film.
摘要翻译：一种用于制造具有安装在多层结构的布线中的晶体管的半导体器件的半导体器件制造方法包括：制造形成在半导体元件上的半导体器件，其包括阻挡绝缘膜，多孔层间绝缘膜，布线，通过在布线沟槽中嵌入金属布线材料形成的通孔塞和形成在多孔层间绝缘膜中的通孔，在形成前在多孔层间绝缘膜的至少一部分上照射电子束或紫外线隔离绝缘膜的开口。

10. 发明申请

US20090072403A1 Wiring Structure, Semiconductor Device and Manufacturing Method Thereof 有权
标题翻译：接线结构，半导体器件及其制造方法
公开(公告)号：US20090072403A1
公开(公告)日：2009-03-19
申请号：US11991939
申请日：2006-09-15
申请人： Fuminori Ito , Yoshihiro Hayashi , Tsuneo Takeuchi
发明人： Fuminori Ito , Yoshihiro Hayashi , Tsuneo Takeuchi
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76825 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02304 , H01L21/02348 , H01L21/02351 , H01L21/02362 , H01L21/31695 , H01L21/76804 , H01L21/76807 , H01L21/76814 , H01L21/7682 , H01L21/76829 , H01L21/76831 , H01L21/76834 , H01L21/76835 , H01L23/53295 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with a high-strength porous modified layer having a pore size of 1 nm or less, which is formed, in a multilayer wiring forming process, by forming a via hole and a wiring trench in a via interlayer insulating film and a wiring interlayer insulting film and then irradiating an electron beam or an ultraviolet ray onto the opening side walls.
摘要翻译：一种半导体器件，其具有通过在通孔层间绝缘膜和布线中形成通孔和布线沟槽而形成的在多层布线形成工艺中形成的孔径为1nm以下的高强度多孔改性层层间绝缘膜，然后将电子束或紫外线照射到开口侧壁上。

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