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1. 发明申请

US20060177638A1 Optical component and method for manufacturing the same 审中-公开
标题翻译：光学部件及其制造方法
公开(公告)号：US20060177638A1
公开(公告)日：2006-08-10
申请号：US11348235
申请日：2006-02-07
申请人： Munehiro Shibuya , Takashi Noguchi , Toshihito Kanai
发明人： Munehiro Shibuya , Takashi Noguchi , Toshihito Kanai
IPC分类号： B32B7/02
CPC分类号： G02B1/14 , C23C14/0021 , G02B1/105 , G02B1/115 , Y02T50/67 , Y10T428/24942
摘要： A method for manufacturing a plastic optical component having an optical multilayer film. The optical multilayer film has a low refractive index layer and a high refractive index layer, and a layer containing titanate of a rare earth element is formed in a vacuum atmosphere at pressure more than 1×10−4 Pa and less than 1×10−2 Pa as the high refractive index layer of the optical multilayer film.
摘要翻译：一种具有光学多层膜的塑料光学部件的制造方法。该光学多层膜具有低折射率层和高折射率层，并且在超过1×10 -4 Pa或更低的压力的真空气氛中形成包含稀土元素的钛酸盐层超过1×10 -2 Pa作为光学多层膜的高折射率层。

2. 发明授权

US08387562B2 Plasma processor and plasma processing method 失效
标题翻译：等离子处理器和等离子体处理方法
公开(公告)号：US08387562B2
公开(公告)日：2013-03-05
申请号：US13242851
申请日：2011-09-23
申请人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
IPC分类号： C23C16/50 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译：蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展。

3. 发明授权

US06518494B1 Silicon structure, method for producing the same, and solar battery using the silicon structure 失效
标题翻译：硅结构体及其制造方法以及使用硅结构的太阳能电池
公开(公告)号：US06518494B1
公开(公告)日：2003-02-11
申请号：US08701292
申请日：1996-08-22
申请人： Munehiro Shibuya , Masatoshi Kitagawa , Yuuji Mukai , Akihisa Yoshida
发明人： Munehiro Shibuya , Masatoshi Kitagawa , Yuuji Mukai , Akihisa Yoshida
IPC分类号： H01L3100
CPC分类号： H01L31/0547 , H01L31/02363 , H01L31/035227 , Y02E10/52
摘要： A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 &mgr;m to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 &mgr;m comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 &mgr;m is formed, and an upper electrode comprising Al having a thickness of approximately 1 &mgr;m is formed on the transparent electrode.
摘要翻译：具有太阳光反射少的硅结构，适用于太阳能电池。在石英衬底的整个表面上，以约51μm的厚度沉积Mo以形成下电极。在下电极的整个表面上，通过使用Si 2 Cl 6混合的主要包含硅的膜，形成厚度为30至40μm的包含多个主要由硅构成并具有随机取向的多个柱状硅构件的聚集体的ap型硅结构与BCl3。在p型硅结构的表面上，P通过使用POCl 3的热扩散法扩散，在柱状硅构件的周围形成n型区域。在p型硅结构的整个表面上，形成厚度为30〜40μm的氧化铟锡的透明电极，在透明电极上形成厚度约为1μm的包含Al的上部电极。

4. 发明授权

US5766342A Method for forming silicon film and silicon film forming apparatus 失效
标题翻译：用于形成硅膜和硅膜形成装置的方法
公开(公告)号：US5766342A
公开(公告)日：1998-06-16
申请号：US544016
申请日：1995-10-17
申请人： Munehiro Shibuya , Masatoshi Kitagawa , Yuji Mukai , Takashi Hirao , Akihisa Yoshida
发明人： Munehiro Shibuya , Masatoshi Kitagawa , Yuji Mukai , Takashi Hirao , Akihisa Yoshida
IPC分类号： C23C16/24 , C23C16/448 , C30B23/06
CPC分类号： C23C16/4486 , C23C16/24 , Y10T117/1024
摘要： The method for forming a silicon film of this invention includes the steps of introducing a compound containing silicon and chlorine and being in a liquid form under normal pressure and at an ordinary temperature into a reaction chamber, and spraying the compound in the liquid form in a fine particle state to a surface of a substrate supported in the reaction chamber, and decomposing the compound in the fine particle state by energy applied from outside of the reaction chamber, and depositing a silicon film on the substrate supported in the reaction chamber.
摘要翻译：本发明的形成硅膜的方法包括以下步骤：在常压和常温下将含有硅和氯的化合物以液体形式引入反应室中，并将液体形式的化合物喷雾在微粒状态到支撑在反应室中的基板的表面，并且通过从反应室外部施加的能量分解微细状态的化合物，并在支撑在反应室中的基板上沉积硅膜。

5. 发明授权

US07990616B2 IR-UV cut multilayer filter with dust repellent property 有权
标题翻译：具有防尘性能的IR-UV切割多层过滤器
公开(公告)号：US07990616B2
公开(公告)日：2011-08-02
申请号：US12272153
申请日：2008-11-17
申请人： Munehiro Shibuya
发明人： Munehiro Shibuya
IPC分类号： G02B5/22 , B05D5/12
CPC分类号： G02B5/223
摘要： An optical multilayer filter having an inorganic thin film composed of a plurality of layers on a substrate includes a fluorinated organic silicon compound film formed on a surface of the inorganic thin film, a low-density formation section forming a part of the inorganic thin film, having one or more layers including the most superficial layer of the inorganic thin film, the one or more layers being formed of at least one of a low-density titanium oxide layer and a low-density silicon oxide layer, and a high-density formation section forming another part of the inorganic thin film, disposed between the low-density formation section and the substrate, having silicon oxide layers with a density higher than the low-density silicon oxide layer and titanium oxide layers with a density higher than the low-density titanium oxide layer in a stacked manner. A total thickness of the low-density formation section is equal to or smaller than 280 nm.
摘要翻译：在基板上具有由多层构成的无机薄膜的光学层叠型过滤器包括形成在无机薄膜的表面上的氟化有机硅化合物膜，形成无机薄膜的一部分的低密度形成部，具有包括无机薄膜的最表面层的一层或多层，所述一层或多层由低密度氧化钛层和低密度氧化硅层中的至少一种形成，以及高密度层在所述低密度形成部和所述基板之间形成具有密度高于所述低密度氧化硅层的氧化硅层和密度高于所述低密度氧化硅层的氧化钛层的所述无机薄膜的另一部分，层叠的氧化钛层。低密度形成部的总厚度为280nm以下。

6. 发明申请

US20120006492A1 PLASMA PROCESSOR AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体处理器和等离子体处理方法
公开(公告)号：US20120006492A1
公开(公告)日：2012-01-12
申请号：US13242851
申请日：2011-09-23
申请人： Akihiro KIKUCHI , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro KIKUCHI , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
IPC分类号： C23F1/08
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译：蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展。

7. 发明授权

US5470398A Dielectric thin film and method of manufacturing same 失效
标题翻译：介电薄膜及其制造方法
公开(公告)号：US5470398A
公开(公告)日：1995-11-28
申请号：US763674
申请日：1991-09-23
申请人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao
发明人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao
IPC分类号： C23C16/40 , H01L21/02 , H01L21/312
CPC分类号： H01L28/40 , C23C16/401
摘要： A dielectric film is provided which may be used as an insulating layer of a capacitor of a semiconductor DRAM. The dielectric film is comprised of three elements, namely, titanium, silicon and oxygen. The dielectric film has a high dielectric constant and a small leakage current. The film is manufactured from the raw materials of titanium chloride and silicon hydride, and at least one of O.sub.2, N.sub.2 O, and a mixture of O.sub.2 and N.sub.2 O by plasma-decomposing the raw materials with the application of a strong electric field.
摘要翻译：提供了可以用作半导体DRAM的电容器的绝缘层的电介质膜。电介质膜由三种元素组成，即钛，硅和氧。电介质膜具有高的介电常数和较小的漏电流。该薄膜由氯化钛和氢化硅的原料以及O 2，N 2 O以及O 2和N 2 O的混合物中的至少一种制成，通过施加强电场等离子体分解原料。

8. 发明授权

US07672046B2 Optical multilayer filter, method for manufacturing the same, and electronic apparatus 有权
标题翻译：光学多层滤光器及其制造方法以及电子设备
公开(公告)号：US07672046B2
公开(公告)日：2010-03-02
申请号：US11694305
申请日：2007-03-30
申请人： Munehiro Shibuya
发明人： Munehiro Shibuya
IPC分类号： F21V9/04 , G02B1/10
CPC分类号： G02B5/285 , C03C17/3417 , G02B2207/121
摘要： An optical multilayer filter comprises a substrate, and an inorganic thin film that is composed of a plurality of layers and formed on the substrate. An uppermost surface layer of the inorganic thin film is a silicon oxide layer having a density of from 1.9 g/cm3 to 2.2 g/cm3.
摘要翻译：光学多层滤光器包括基板和由多个层组成并形成在基板上的无机薄膜。无机薄膜的最上表面层是密度为1.9g / cm 3至2.2g / cm 3的氧化硅层。

9. 发明授权

US5203925A Apparatus for producing a thin film of tantalum oxide 失效
标题翻译：用于生产氧化钽薄膜的设备
公开(公告)号：US5203925A
公开(公告)日：1993-04-20
申请号：US901555
申请日：1992-06-19
申请人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao , Hiroshi Nishizato
发明人： Munehiro Shibuya , Masatoshi Kitagawa , Takeshi Kamada , Takashi Hirao , Hiroshi Nishizato
IPC分类号： C23C16/40 , C23C16/448
CPC分类号： C23C16/405 , C23C16/4481
摘要： An apparatus for producing a thin film of tantalum oxide comprising a vacuum chamber with a heater, an ampule of an organic tantalum compound, a container of a carrier gas, a container of an oxygen-containing gas, and a three way valve having a liquid inlet, a gas inlet and an outlet, the liquid inlet being connected with the ampule via a liquid flow controller, the gas inlet being connected with the containers of gas, the outlet being connected with the vacuum chamber, whereby the tantalum compound vaporized at the three way valve can obtain constant supply by the flow controller regardless of the ambient temperature, resulting in the tantalum oxide film of uniform quality.
摘要翻译：一种氧化钽薄膜的制造装置，包括具有加热器的真空室，有机钽化合物的安瓿，载气的容器，含氧气体的容器，以及具有液体的三通阀入口，气体入口和出口，液体入口通过液体流量控制器与安瓿连接，气体入口与气体容器连接，出口与真空室连接，由此钽化合物在三通阀可以通过流量控制器获得恒定的供应，不管环境温度如何，导致氧化钽膜质量均匀。

10. 发明授权

US08056503B2 Plasma procesor and plasma processing method 有权
标题翻译：等离子处理和等离子体处理方法
公开(公告)号：US08056503B2
公开(公告)日：2011-11-15
申请号：US10483251
申请日：2002-07-02
申请人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
发明人： Akihiro Kikuchi , Satoshi Kayamori , Shinya Shima , Yuichiro Sakamoto , Kimihiro Higuchi , Kaoru Oohashi , Takehiro Ueda , Munehiro Shibuya , Tadashi Gondai
IPC分类号： C23C16/50 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32724 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32642 , H01J37/32715 , H01J37/3411 , H01J2237/002 , H01J2237/0206 , H01J2237/334 , H01L21/67069
摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.
摘要翻译：蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展。

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