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1. 发明申请

US20090039515A1 IONIZING RADIATION BLOCKING IN IC CHIP TO REDUCE SOFT ERRORS 有权
标题翻译： IC芯片中的放射线阻塞减少软错误
公开(公告)号：US20090039515A1
公开(公告)日：2009-02-12
申请号：US11836819
申请日：2007-08-10
申请人： Mukta G. Farooq , Ian D. Melville , Kevin S. Petrarca , Kenneth P. Rodbell
发明人： Mukta G. Farooq , Ian D. Melville , Kevin S. Petrarca , Kenneth P. Rodbell
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L23/5329 , H01L23/556 , H01L2924/0002 , Y10S438/958 , Y10S438/967 , H01L2924/00
摘要： Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.
摘要翻译：公开了阻止电离辐射以减少软错误的方法和产生的IC芯片。一个实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及在其中形成包括其中的电离辐射阻挡材料的至少一个后端线（BEOL）电介质层。另一实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及形成位于IC芯片的后端（BEOL）的电离辐射阻挡层。电离辐射阻挡材料或层吸收电离辐射并减少IC芯片内的软误差。

2. 发明授权

US08999764B2 Ionizing radiation blocking in IC chip to reduce soft errors 有权
标题翻译： IC芯片中的电离辐射阻断减少软错误
公开(公告)号：US08999764B2
公开(公告)日：2015-04-07
申请号：US11836819
申请日：2007-08-10
申请人： Mukta G. Farooq , Ian D. Melville , Kevin S. Petrarca , Kenneth P. Rodbell
发明人： Mukta G. Farooq , Ian D. Melville , Kevin S. Petrarca , Kenneth P. Rodbell
IPC分类号： H01L21/00 , H01L23/532 , H01L23/556
CPC分类号： H01L23/5329 , H01L23/556 , H01L2924/0002 , Y10S438/958 , Y10S438/967 , H01L2924/00
摘要： Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.
摘要翻译：公开了阻止电离辐射以减少软错误的方法和产生的IC芯片。一个实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及在其中形成包括其中的电离辐射阻挡材料的至少一个后端线（BEOL）电介质层。另一实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及形成位于IC芯片的后端（BEOL）的电离辐射阻挡层。电离辐射阻挡材料或层吸收电离辐射并减少IC芯片内的软误差。

3. 发明授权

US10784200B2 Ionizing radiation blocking in IC chip to reduce soft errors 有权
公开(公告)号：US10784200B2
公开(公告)日：2020-09-22
申请号：US13409643
申请日：2012-03-01
申请人： Mukta G. Farooq , Ian D. Melville , Kevin S. Petrarca , Kenneth P. Rodbell
发明人： Mukta G. Farooq , Ian D. Melville , Kevin S. Petrarca , Kenneth P. Rodbell
IPC分类号： H01L23/532 , H01L23/556
摘要： Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.

4. 发明申请

US20120161300A1 IONIZING RADIATION BLOCKING IN IC CHIP TO REDUCE SOFT ERRORS 审中-公开
标题翻译： IC芯片中的放射线阻塞减少软错误
公开(公告)号：US20120161300A1
公开(公告)日：2012-06-28
申请号：US13409643
申请日：2012-03-01
申请人： Mukta G. Farooq , Ian D. Melville , Kevin S. Petrarca , Kenneth P. Rodbell
发明人： Mukta G. Farooq , Ian D. Melville , Kevin S. Petrarca , Kenneth P. Rodbell
IPC分类号： H01L23/552
CPC分类号： H01L23/5329 , H01L23/556 , H01L2924/0002 , Y10S438/958 , Y10S438/967 , H01L2924/00
摘要： Methods of blocking ionizing radiation to reduce soft errors and resulting IC chips are disclosed. One embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming at least one back end of line (BEOL) dielectric layer including ionizing radiation blocking material therein. Another embodiment includes forming a front end of line (FEOL) for an integrated circuit (IC) chip; and forming an ionizing radiation blocking layer positioned in a back end of line (BEOL) of the IC chip. The ionizing radiation blocking material or layer absorbs ionizing radiation and reduces soft errors within the IC chip.
摘要翻译：公开了阻止电离辐射以减少软错误的方法和产生的IC芯片。一个实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及在其中形成包括其中的电离辐射阻挡材料的至少一个后端线（BEOL）电介质层。另一实施例包括形成用于集成电路（IC）芯片的线路前端（FEOL）; 以及形成位于IC芯片的后端（BEOL）的电离辐射阻挡层。电离辐射阻挡材料或层吸收电离辐射并减少IC芯片内的软误差。

5. 发明申请

US20080156636A1 Homogeneous Copper Interconnects for BEOL 审中-公开
标题翻译： BEOL的均匀铜互连
公开(公告)号：US20080156636A1
公开(公告)日：2008-07-03
申请号：US11971488
申请日：2008-01-09
申请人： Kevin S. Petrarca , Mahadevaiyer Krishnan , Michael Lofaro , Kenneth P. Rodbell
发明人： Kevin S. Petrarca , Mahadevaiyer Krishnan , Michael Lofaro , Kenneth P. Rodbell
IPC分类号： C23C14/16
CPC分类号： H01L21/76873 , H01L21/2855 , H01L21/7684 , H01L21/76877
摘要： Defects on the edge of copper interconnects for back end of the line semiconductor devices are alleviated by an interconnect that comprises an impure copper seed layer. The impure copper seed layer covers a barrier layer, which covers an insulating layer that has an opening. Electroplated copper fills the opening in the insulating layer. Through a chemical mechanical polish, the barrier layer, the impure an impure copper seed layer derived from an electroplated copper bath copper seed layer, and the electroplated copper are planarized to the insulating layer.
摘要翻译：通过包括不纯铜种子层的互连可以减轻线半导体器件后端的铜互连边缘的缺陷。不纯铜种子层覆盖阻挡层，其覆盖具有开口的绝缘层。电镀铜填充绝缘层中的开口。通过化学机械抛光，阻挡层，不纯的由电镀铜浴铜籽晶层衍生的铜籽晶层和电镀铜平坦化到绝缘层。

6. 发明授权

US08785217B2 Tunable radiation source 有权
标题翻译：可调辐射源
公开(公告)号：US08785217B2
公开(公告)日：2014-07-22
申请号：US13230798
申请日：2011-09-12
申请人： Michael A. Gaynes , Michael S. Gordon , Nancy C. LaBianca , Kenneth P. Rodbell
发明人： Michael A. Gaynes , Michael S. Gordon , Nancy C. LaBianca , Kenneth P. Rodbell
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： H01L23/556 , G01R31/2881 , G06F17/5036 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： An energy distribution of soft error-inducing radiation likely to be encountered by an electronic circuit during operation is determined. A tuned radiation source having a source energy distribution similar to the determined energy distribution is prepared. The electronic circuit is tested using the tuned radiation source.
摘要翻译：确定在操作期间可能由电子电路遇到的软误差诱发辐射的能量分布。制备具有与所确定的能量分布相似的源能分布的调谐辐射源。使用调谐的辐射源测试电子电路。

7. 发明授权

US08293643B2 Method and structure of forming silicide and diffusion barrier layer with direct deposited film on silicon 有权
标题翻译：在硅上直接沉积薄膜形成硅化物和扩散阻挡层的方法和结构
公开(公告)号：US08293643B2
公开(公告)日：2012-10-23
申请号：US12819634
申请日：2010-06-21
申请人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
发明人： Cyril Cabral, Jr. , John M. Cotte , Kathryn C. Fisher , Laura L. Kosbar , Christian Lavoie , Zhu Liu , Kenneth P. Rodbell , Xiaoyan Shao
IPC分类号： H01L21/477
CPC分类号： H01L21/28518 , H01L21/76841 , H01L23/53238 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A semiconductor device or a photovoltaic cell having a contact structure, which includes a silicon (Si) substrate; a metal alloy layer deposited on the silicon substrate; a metal silicide layer and a diffusion layer formed simultaneously from thermal annealing the metal alloy layer; and a metal layer deposited on the metal silicide and barrier layers.
摘要翻译：具有接触结构的半导体器件或光电池，其包括硅（Si）衬底; 沉积在硅衬底上的金属合金层; 金属硅化物层和由金属合金层热退火同时形成的扩散层; 以及沉积在金属硅化物和阻挡层上的金属层。

8. 发明授权

US07877716B2 Computer program products for determining stopping powers of design structures with respect to a traveling particle 有权
标题翻译：用于确定相对于旅行颗粒的设计结构的停止力的计算机程序产品
公开(公告)号：US07877716B2
公开(公告)日：2011-01-25
申请号：US12111529
申请日：2008-04-29
申请人： Giovanni Fiorenza , Conal E. Murray , Kenneth P. Rodbell , Henry Tang
发明人： Giovanni Fiorenza , Conal E. Murray , Kenneth P. Rodbell , Henry Tang
IPC分类号： G06F17/50 , G06F19/00 , G06G7/62
CPC分类号： G06F17/5009 , G06F2217/16
摘要： A computer program product, comprising a computer readable storage device having a computer readable program code stored therein, said program code including an algorithm adapted to be executed by a computer to implement a method. First, design information of a design structure is provided including a back-end-of-line layer of an integrated circuit which includes N interconnect layers, wherein N is a positive integer. Next, each interconnect layer is divided into multiple pixels. Next, a first path of a traveling particle in a first interconnect layer of the N interconnect layers is determined. Next, M path pixels of the multiple pixels of the first interconnect layer on the first path of the traveling particle are identified, wherein M is a positive integer. Next, a first loss energy lost by the traveling particle due to its completely passing through a first pixel of the M path pixels is determined.
摘要翻译：一种计算机程序产品，包括具有存储在其中的计算机可读程序代码的计算机可读存储设备，所述程序代码包括适于由计算机执行以实现方法的算法。首先，提供一种设计结构的设计信息，其包括包括N个互连层的集成电路的后端行层，其中N是正整数。接下来，每个互连层被分成多个像素。接下来，确定N个互连层的第一互连层中的行进粒子的第一路径。接下来，识别行进粒子的第一路径上的第一互连层的多个像素的M个路径像素，其中M是正整数。接下来，确定由于行进粒子完全通过M路径像素的第一像素而损失的第一损失能量。

9. 发明授权

US07649257B2 Discrete placement of radiation sources on integrated circuit devices 有权
标题翻译：辐射源在集成电路设备上的离散放置
公开(公告)号：US07649257B2
公开(公告)日：2010-01-19
申请号：US12051881
申请日：2008-03-20
申请人： Michael S. Gordon , Nancy C. LaBianca , Kenneth P. Rodbell
发明人： Michael S. Gordon , Nancy C. LaBianca , Kenneth P. Rodbell
IPC分类号： H01L23/48
CPC分类号： H01L22/20 , G01R31/2856 , G01R31/2881 , G01R31/31816 , H01L23/556 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/014 , H01L2924/1305 , H01L2924/00
摘要： An integrated circuit and methods of forming and using the integrated circuit. The circuit includes: a radiation-emitting layer over a selected region of a top surface of an integrated circuit chip, the radiation emitting layer comprising a first polymer or resin and a first radioactive material, the region smaller than a whole of the top surface of the integrated circuit chip, the region including a circuit that is liable to temporary failure when struck by radiation generated by the first radioactive material.
摘要翻译：集成电路和集成电路的形成和使用方法。该电路包括：在集成电路芯片的顶表面的选定区域上的辐射发射层，辐射发射层包括第一聚合物或树脂和第一放射性材料，该区域小于整个顶表面的整个面积集成电路芯片，该区域包括当被第一放射性物质产生的辐射撞击时易于暂时失效的电路。

10. 发明申请

US20090236699A1 DISCREET PLACEMENT OF RADIATION SOURCES ON INTEGRATED CIRCUIT DEVICES 有权
标题翻译：集成电路设备上放射源的放置
公开(公告)号：US20090236699A1
公开(公告)日：2009-09-24
申请号：US12051881
申请日：2008-03-20
申请人： Michael S. Gordon , Nancy C. LaBianca , Kenneth P. Rodbell
发明人： Michael S. Gordon , Nancy C. LaBianca , Kenneth P. Rodbell
IPC分类号： H01L23/58 , H01L21/00 , H01L21/66
CPC分类号： H01L22/20 , G01R31/2856 , G01R31/2881 , G01R31/31816 , H01L23/556 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/014 , H01L2924/1305 , H01L2924/00
摘要： An integrated circuit and methods of forming and using the integrated circuit. The circuit includes: a radiation-emitting layer over a selected region of a top surface of an integrated circuit chip, the radiation emitting layer comprising a first polymer or resin and a first radioactive material, the region smaller than a whole of the top surface of the integrated circuit chip, the region including a circuit that is liable to temporary failure when struck by radiation generated by the first radioactive material.
摘要翻译：集成电路和集成电路的形成和使用方法。该电路包括：在集成电路芯片的顶表面的选定区域上的辐射发射层，辐射发射层包括第一聚合物或树脂和第一放射性材料，该区域小于整个顶表面的整个面积集成电路芯片，该区域包括当被第一放射性物质产生的辐射撞击时易于暂时失效的电路。

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