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1. 发明授权

US08304981B2 Organic light emitting diode display and manufacturing method thereof 有权
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US08304981B2
公开(公告)日：2012-11-06
申请号：US12433093
申请日：2009-04-30
申请人： Mu-Gyeom Kim , Byoung-Seong Jeong , Seong-Kweon Heo , Min-Chul Shin , Jong-Moo Huh , Chang-Mo Park
发明人： Mu-Gyeom Kim , Byoung-Seong Jeong , Seong-Kweon Heo , Min-Chul Shin , Jong-Moo Huh , Chang-Mo Park
IPC分类号： H01L51/00
CPC分类号： H01L27/3262 , H01L27/3246 , H01L27/3272 , H01L2251/305
摘要： An organic light emitting diode display includes a substrate. A control electrode is on the substrate. A gate insulating film covers the control electrode. An input electrode and an output electrode are on the gate insulating film and face each other. An oxide semiconductor is between the input electrode and the output electrode and on the control electrode. A pixel electrode is on portions of the edges of the output electrode and is electrically connected. An organic light emitting member is on the pixel electrode. A common electrode is on the organic light emitting member. The oxide semiconductor and the pixel electrode may be of the same layer.
摘要翻译：有机发光二极管显示器包括基板。控制电极在基板上。栅极绝缘膜覆盖控制电极。输入电极和输出电极在栅极绝缘膜上并且彼此面对。氧化物半导体位于输入电极和输出电极之间以及控制电极上。像素电极在输出电极的边缘的部分上并且电连接。有机发光部件在像素电极上。公共电极在有机发光部件上。氧化物半导体和像素电极可以是相同的层。

2. 发明授权

US08766530B2 Organic light emitting diode display and manufacturing method thereof 有权
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US08766530B2
公开(公告)日：2014-07-01
申请号：US13607373
申请日：2012-09-07
申请人： Mu-Gyeom Kim , Byoung-Seong Jeong , Seong-Kweon Heo , Min-Chul Shin , Jong-Moo Huh , Chang-Mo Park
发明人： Mu-Gyeom Kim , Byoung-Seong Jeong , Seong-Kweon Heo , Min-Chul Shin , Jong-Moo Huh , Chang-Mo Park
IPC分类号： H01L29/02
CPC分类号： H01L27/3262 , H01L27/3246 , H01L27/3272 , H01L2251/305
摘要： An organic light emitting diode display includes a substrate. A control electrode is on the substrate. A gate insulating film covers the control electrode. An input electrode and an output electrode are on the gate insulating film and face each other. An oxide semiconductor is between the input electrode and the output electrode and on the control electrode. A pixel electrode is on portions of the edges of the output electrode and is electrically connected. An organic light emitting member is on the pixel electrode. A common electrode is on the organic light emitting member. The oxide semiconductor and the pixel electrode may be of the same layer.
摘要翻译：有机发光二极管显示器包括基板。控制电极在基板上。栅极绝缘膜覆盖控制电极。输入电极和输出电极在栅极绝缘膜上并且彼此面对。氧化物半导体位于输入电极和输出电极之间以及控制电极上。像素电极在输出电极的边缘的部分上并且电连接。有机发光部件在像素电极上。公共电极在有机发光部件上。氧化物半导体和像素电极可以是相同的层。

3. 发明申请

US20100133991A1 Organic Light Emitting Diode Display and Manufacturing Method Thereof 有权
标题翻译：有机发光二极管显示及制造方法
公开(公告)号：US20100133991A1
公开(公告)日：2010-06-03
申请号：US12433093
申请日：2009-04-30
申请人： Mu-Gyeom Kim , Byoung-Seong Jeong , Seong-Kweon Heo , Min-Chul Shin , Jong-Moo Huh , Chang-Mo Park
发明人： Mu-Gyeom Kim , Byoung-Seong Jeong , Seong-Kweon Heo , Min-Chul Shin , Jong-Moo Huh , Chang-Mo Park
IPC分类号： H01J1/63 , H01L21/02
CPC分类号： H01L27/3262 , H01L27/3246 , H01L27/3272 , H01L2251/305
摘要： An organic light emitting diode display includes a substrate. A control electrode is on the substrate. A gate insulating film covers the control electrode. An input electrode and an output electrode are on the gate insulating film and face each other. An oxide semiconductor is between the input electrode and the output electrode and on the control electrode. A pixel electrode is on portions of the edges of the output electrode and is electrically connected. An organic light emitting member is on the pixel electrode. A common electrode is on the organic light emitting member. The oxide semiconductor and the pixel electrode may be of the same layer.
摘要翻译：有机发光二极管显示器包括基板。控制电极在基板上。栅极绝缘膜覆盖控制电极。输入电极和输出电极在栅极绝缘膜上并且彼此面对。氧化物半导体位于输入电极和输出电极之间以及控制电极上。像素电极在输出电极的边缘的部分上并且电连接。有机发光部件在像素电极上。公共电极在有机发光部件上。氧化物半导体和像素电极可以是相同的层。

4. 发明授权

US08232123B2 Organic light emitting diode display with improved on-current, and method for manufacturing the same 失效
标题翻译：具有改善的导通电流的有机发光二极管显示器及其制造方法
公开(公告)号：US08232123B2
公开(公告)日：2012-07-31
申请号：US12424639
申请日：2009-04-16
申请人： Kyu-Sik Cho , Byoung-Seong Jeong , Joon-Hoo Choi , Jong-Moo Huh
发明人： Kyu-Sik Cho , Byoung-Seong Jeong , Joon-Hoo Choi , Jong-Moo Huh
IPC分类号： H01L21/336
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
摘要翻译：一种有机发光器件及其制造方法，包括在绝缘基板上彼此相交的第一信号线和第二信号线，连接到第一信号线和第二信号线的开关薄膜晶体管，驱动薄膜连接到开关薄膜晶体管的晶体管和连接到驱动薄膜晶体管的发光二极管（“LD”）。驱动薄膜晶体管包括驱动控制电极和与驱动控制电极重叠的驱动半导体，具有掺杂区域和非掺杂区域的结晶硅，设置在驱动控制电极和驱动半导体之间的驱动栅极绝缘层，以及在驱动半导体上相互相对的驱动输入电极和驱动输出电极，其中驱动栅极绝缘层和驱动半导体之间的界面包括氮气。

5. 发明授权

US08519386B2 Organic light emitting diode display with improved crystallinity of driving semiconductor 失效
标题翻译：有机发光二极管显示器具有改善驱动半导体的结晶度
公开(公告)号：US08519386B2
公开(公告)日：2013-08-27
申请号：US13532316
申请日：2012-06-25
申请人： Kyu-Sik Cho , Byoung-Seong Jeong , Joon-Hoo Choi , Jong-Moo Huh
发明人： Kyu-Sik Cho , Byoung-Seong Jeong , Joon-Hoo Choi , Jong-Moo Huh
IPC分类号： H01L29/08
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
摘要翻译：一种有机发光器件及其制造方法，包括在绝缘基板上彼此相交的第一信号线和第二信号线，连接到第一信号线和第二信号线的开关薄膜晶体管，驱动薄膜连接到开关薄膜晶体管的晶体管和连接到驱动薄膜晶体管的发光二极管（“LD”）。驱动薄膜晶体管包括驱动控制电极和与驱动控制电极重叠的驱动半导体，具有掺杂区域和非掺杂区域的结晶硅，设置在驱动控制电极和驱动半导体之间的驱动栅极绝缘层，以及在驱动半导体上相互相对的驱动输入电极和驱动输出电极，其中驱动栅极绝缘层和驱动半导体之间的界面包括氮气。

6. 发明授权

US07884370B2 Organic light emitting diode display and method for manufacturing the same 有权
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US07884370B2
公开(公告)日：2011-02-08
申请号：US11773059
申请日：2007-07-03
申请人： Jong-Moo Huh , Joon-Hoo Choi , Seung-Kyu Park , Byoung-Seong Jeong
发明人： Jong-Moo Huh , Joon-Hoo Choi , Seung-Kyu Park , Byoung-Seong Jeong
IPC分类号： H01L27/14 , H01L21/84
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/1229 , H01L27/124 , H01L27/3262 , H01L27/3276 , H01L51/0015
摘要： A method for manufacturing an organic light emitting diode display includes disposing a crystalline semiconductor layer on a substrate, disposing a gate line, a driving input electrode, and a driving output electrode on the crystalline semiconductor layer, the gate line including a switching control electrode, patterning the crystalline semiconductor layer using the gate line, the driving input electrode, and the driving output electrode as a mask, disposing a gate insulating layer and an amorphous semiconductor layer on the gate line, the driving input electrode, and the driving output electrode, disposing a data line, a driving voltage line, a switching output electrode, and a driving control electrode on the amorphous semiconductor, the data line including a switching input electrode, disposing a pixel electrode connected to the driving output electrode, disposing a light emitting member on the pixel electrode, and disposing a common electrode on the light emitting member.
摘要翻译：一种制造有机发光二极管显示器的方法包括在晶体半导体层上在晶体半导体层上设置晶体半导体层，在晶体半导体层上设置栅极线，驱动输入电极和驱动输出电极，栅极线包括开关控制电极，使用栅极线，驱动输入电极和驱动输出电极作为掩模图案化晶体半导体层，在栅极线，驱动输入电极和驱动输出电极上设置栅极绝缘层和非晶半导体层，在所述非晶半导体上设置数据线，驱动电压线，开关输出电极和驱动控制电极，所述数据线包括开关输入电极，配置连接到所述驱动输出电极的像素电极，配置发光部件并且在发光部件上设置公共电极。

7. 发明授权

US08507331B2 Method of adjusting gap between bumps in pixel region and method of manufacturing display device using the method 失效
标题翻译：使用该方法调整像素区域中的凸块之间的间隙的方法和使用该方法制造显示装置的方法
公开(公告)号：US08507331B2
公开(公告)日：2013-08-13
申请号：US13449068
申请日：2012-04-17
申请人： Min-Chul Shin , Do-Young Kim , Yun-Gyu Lee , Jong-Moo Huh
发明人： Min-Chul Shin , Do-Young Kim , Yun-Gyu Lee , Jong-Moo Huh
IPC分类号： H01L21/00
CPC分类号： H01L27/3258 , H01L27/1285 , H01L51/5209
摘要： A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions.
摘要翻译：一种制造显示装置的方法包括在衬底的顶表面上形成缓冲层，在缓冲层的顶表面上形成非晶硅层，并通过用激光束照射非晶硅层来形成多晶硅层。在多晶硅层的顶表面上形成有多个第一突起，并且通过将多晶硅层的形状转移到缓冲层，在缓冲层的表面上形成多个第二突起。然后，缓冲层上的栅极绝缘体形成为第二突起的凸块的形状。

8. 发明授权

US09099390B2 Crystallization apparatus, crystallization method, organic light-emitting display apparatus and method of manufacturing organic light-emitting display apparatus 有权
标题翻译：结晶装置，结晶法，有机发光显示装置及制造有机发光显示装置的方法
公开(公告)号：US09099390B2
公开(公告)日：2015-08-04
申请号：US13451980
申请日：2012-04-20
申请人： Sung-Ho Kim , Do-Young Kim , Min-Chul Shin , Min-Hwan Choi , Jong-Moo Huh
发明人： Sung-Ho Kim , Do-Young Kim , Min-Chul Shin , Min-Hwan Choi , Jong-Moo Huh
IPC分类号： H01L21/00 , H01L21/20 , H01L21/268 , H01L21/67 , H01L27/12 , H01L27/32
CPC分类号： H01L21/268 , H01L21/67115 , H01L27/1229 , H01L27/1285 , H01L27/3262
摘要： A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times.
摘要翻译：一种用于结晶形成在基板上的半导体层的结晶装置，所述结晶装置包括：产生激光束的激光发生器和安装有所述基板的载物台，其中所述半导体层被分成多个结晶区域和多个非结晶化区域，激光束多次照射到结晶化区域上，使结晶化区域结晶化，其中将激光束多次照射到相同结晶区域的不同位置上。

9. 发明授权

US08563978B2 Display device and method for manufacturing the same 有权
公开(公告)号：US08563978B2
公开(公告)日：2013-10-22
申请号：US13084741
申请日：2011-04-12
申请人： Min-Chul Shin , Jong-Moo Huh , Bong-Ju Kim , Yun-Gyu Lee
发明人： Min-Chul Shin , Jong-Moo Huh , Bong-Ju Kim , Yun-Gyu Lee
IPC分类号： H01L33/08
CPC分类号： H01L51/0023 , H01L27/1255 , H01L27/1288 , H01L27/3244 , H01L27/3262 , H01L51/5203 , H01L2227/323
摘要： A display device includes a substrate, a first conductive film pattern including a gate electrode and a first capacitor electrode on the substrate, a gate insulating layer pattern on the first conductive film pattern, a polycrystalline silicon film pattern including an active layer and a second capacitor electrode on the gate insulating layer pattern, an interlayer insulating layer on the polycrystalline silicon film pattern, a plurality of first contact holes through the gate insulating layer pattern and the interlayer insulating layer to expose a portion of the first conductive film pattern, a plurality of second contact holes through the interlayer insulating layer to expose a portion of the polycrystalline silicon film pattern, and a second conductive film pattern including a source electrode, a drain electrode, and a pixel electrode on the interlayer insulating layer.

10. 发明申请

US20120301985A1 METHOD OF ADJUSTING GAP BETWEEN BUMPS IN PIXEL REGION AND METHOD OF MANUFACTURING DISPLAY DEVICE USING THE METHOD 失效
标题翻译：调整像素区域中的脉冲之间的间隙的方法和使用该方法制造显示器件的方法
公开(公告)号：US20120301985A1
公开(公告)日：2012-11-29
申请号：US13449068
申请日：2012-04-17
申请人： Min-Chul Shin , Do-Young Kim , Yun-Gyu Lee , Jong-Moo Huh
发明人： Min-Chul Shin , Do-Young Kim , Yun-Gyu Lee , Jong-Moo Huh
IPC分类号： H01L21/336 , H01L33/16
CPC分类号： H01L27/3258 , H01L27/1285 , H01L51/5209
摘要： A method of manufacturing a display device includes forming a buffer layer on a top surface of a substrate, forming an amorphous silicon layer on a top surface of the buffer layer, and forming a polysilicon layer by irradiating the amorphous silicon layer with a laser beam. A plurality of first protrusions are formed on the top surface of the polysilicon layer, and a plurality of second protrusions are formed on a surface of the buffer layer by transferring the shape of the polysilicon layer to the buffer layer. A gate insulator on the buffer layer is then formed in the shape of bumps of the second protrusions.
摘要翻译：一种制造显示装置的方法包括在衬底的顶表面上形成缓冲层，在缓冲层的顶表面上形成非晶硅层，并通过用激光束照射非晶硅层来形成多晶硅层。在多晶硅层的顶表面上形成有多个第一突起，并且通过将多晶硅层的形状转移到缓冲层，在缓冲层的表面上形成多个第二突起。然后，缓冲层上的栅极绝缘体形成为第二突起的凸块的形状。

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