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1. 发明授权

US5901042A Package and semiconductor device 失效
标题翻译：封装和半导体器件
公开(公告)号：US5901042A
公开(公告)日：1999-05-04
申请号：US62752
申请日：1998-04-20
申请人： Yorito Ota , Masahiro Maeda , Shigeru Morimoto , Morio Nakamura
发明人： Yorito Ota , Masahiro Maeda , Shigeru Morimoto , Morio Nakamura
IPC分类号： H01L23/12 , H01L23/36 , H01L23/66 , H01L25/16 , H05K7/20
CPC分类号： H01L25/165 , H01L23/36 , H01L23/66 , H01L24/49 , H01L25/162 , H01L2223/6644 , H01L2224/48091 , H01L2224/48237 , H01L2224/49175 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/13063 , H01L2924/15153 , H01L2924/1517 , H01L2924/3011 , H01L2924/30111
摘要： A semiconductor chip is mounted on the central portion of a metal heat radiator. A pair of metal projecting members are provided on the heat radiator externally of the pair of opposed sides of the semiconductor chip to extend therealong beyond both ends of the semiconductor chip. A circuit board is mounted on the side of each of the pair of projecting members opposed to the semiconductor chip. The top surface of the semiconductor chip and the top surface of each of the projecting members are connected to each other by a third bonding wire for grounding.
摘要翻译：半导体芯片安装在金属散热器的中心部分上。一对金属突出构件设置在半导体芯片的一对相对侧的外部的散热器上，以延伸超过半导体芯片的两端。电路板安装在与半导体芯片相对的一对突出构件中的每一个的侧面上。半导体芯片的顶表面和每个突出构件的顶表面通过用于接地的第三接合线彼此连接。

2. 发明授权

US5736901A Radio frequency amplifier with stable operation and restrained oscillation at low frequencies 失效
标题翻译：射频放大器稳定运行，低频抑制振荡
公开(公告)号：US5736901A
公开(公告)日：1998-04-07
申请号：US625701
申请日：1996-04-03
申请人： Morio Nakamura , Masahiro Maeda , Yorito Ota
发明人： Morio Nakamura , Masahiro Maeda , Yorito Ota
IPC分类号： H03F1/08 , H03F3/193 , H03F3/60 , H03F3/16
CPC分类号： H03F3/1935 , H03F1/086
摘要： In a radio frequency amplifier, a resistor and an inductor are connected to a gate terminal of transistor such as an FET. Another resistor for preventing oscillation is connected to the inductor. A capacitor and a third resistor connected to each other in parallel are connected to the first resistor while the other ends thereof are grounded. A resistance value of the resistor for preventing oscillation is in the range of about 30 .OMEGA. to about 70 .OMEGA.. An inductance value of the inductor is such that an impedance value for a low frequency becomes negligibly small.
摘要翻译：在射频放大器中，电阻器和电感器连接到诸如FET的晶体管的栅极端子。用于防止振荡的另一个电阻器连接到电感器。并联连接的电容器和第三电阻器连接到第一电阻器，而其另一端接地。用于防止振荡的电阻器的电阻值在约30欧姆至约70欧米茄的范围内。电感器的电感值使得低频的阻抗值变得可忽略不计。

3. 发明授权

US06555900B1 Package, semiconductor device and method for fabricating the semiconductor device 失效
标题翻译：采用定位控制板的半导体封装
公开(公告)号：US06555900B1
公开(公告)日：2003-04-29
申请号：US09413759
申请日：1999-10-06
申请人： Shigeru Morimoto , Yorito Ota , Masahiro Maeda
发明人： Shigeru Morimoto , Yorito Ota , Masahiro Maeda
IPC分类号： H01L23495
CPC分类号： H01L24/85 , H01L23/057 , H01L23/13 , H01L23/16 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2223/6644 , H01L2224/29111 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48175 , H01L2224/48247 , H01L2224/49175 , H01L2224/73265 , H01L2224/83101 , H01L2224/8319 , H01L2224/83801 , H01L2224/85 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/15747 , H01L2924/15787 , H01L2924/3011 , H01L2924/30111 , H01L2224/78 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A package according to the present invention includes: a support for mounting a semiconductor component on the upper surface thereof; a positioning control plate, which is secured to the support and includes an opening or a notch; and a lead provided on the support for establishing electrical continuity between the semiconductor component mounted on the support and an external component. The positioning control plate houses at least a lower part of the semiconductor component inside the opening or the notch, thereby controlling a position of the semiconductor component on the support.
摘要翻译：根据本发明的封装包括：用于在其上表面上安装半导体部件的支撑件; 定位控制板，其固定到支撑件并且包括开口或凹口; 以及设置在支撑件上的引线，用于在安装在支撑件上的半导体部件与外部部件之间建立电连续性。定位控制板在开口或凹口内容纳至少半导体部件的下部，从而控制半导体部件在支撑体上的位置。

4. 发明授权

US6166436A High frequency semiconductor device 失效
标题翻译：高频半导体器件
公开(公告)号：US6166436A
公开(公告)日：2000-12-26
申请号：US60600
申请日：1998-04-15
申请人： Masahiro Maeda , Morio Nakamura , Takayuki Yoshida , Masazumi Yamazaki
发明人： Masahiro Maeda , Morio Nakamura , Takayuki Yoshida , Masazumi Yamazaki
IPC分类号： H01L21/56 , H01L23/482 , H01L23/66 , H01L21/44 , H01L21/60
CPC分类号： H01L23/4824 , H01L21/563 , H01L23/66 , H01L24/29 , H01L24/32 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/83192 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/10329 , H01L2924/1306 , H01L2924/13064 , H01L2924/1423 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/01015 , H01L2924/01031 , H01L2924/00012 , H01L2924/3512 , H01L2924/00 , H01L2224/05599
摘要： A high frequency semiconductor device includes: a substrate having a substantially flat principal surface, with a predetermined circuit pattern including at least an input line, an output line, and a ground electrode provided on the principal surface; and a transistor which has a drain electrode, a source electrode, and a gate electrode and is mounted on the substrate by a flip chip mounting. The source electrode and the ground electrode are connected to each other by a first bump in the flip chip mounting.
摘要翻译：高频半导体器件包括：具有基本上平坦的主表面的基板，具有至少包括设置在主表面上的输入线，输出线和接地电极的预定电路图案; 以及具有漏电极，源电极和栅电极并通过倒装芯片安装而安装在基板上的晶体管。源电极和接地电极通过倒装芯片安装中的第一凸块相互连接。

5. 发明授权

US5838543A Radio frequency power amplification module 失效
标题翻译：射频功率放大模块
公开(公告)号：US5838543A
公开(公告)日：1998-11-17
申请号：US812484
申请日：1997-03-06
申请人： Morio Nakamura , Masahiro Maeda
发明人： Morio Nakamura , Masahiro Maeda
IPC分类号： H01L23/367 , H05K7/20 , H05K9/00
CPC分类号： H05K9/0056 , H01L23/3677 , H01L23/66 , H05K7/20445 , H01L2924/0002
摘要： A radio frequency power amplification module includes: a radiation section; a printed circuit board attached to the radiation section; a semiconductor device for power amplification, mounted on the printed circuit board; and a cap. The radiation section includes a plurality of radiation boards, the plurality of radiation boards at least including a first radiation board as a lowermost layer, and a second radiation board attached onto the first radiation board, the first radiation board being coupled to the cap.
摘要翻译：射频功率放大模块包括：辐射部分; 连接到辐射部分的印刷电路板; 用于功率放大的半导体器件，安装在印刷电路板上; 和帽子。所述辐射部分包括多个辐射板，所述多个辐射板至少包括作为最下层的第一辐射板，以及连接到所述第一辐射板上的第二辐射板，所述第一辐射板耦合到所述盖。

6. 发明授权

US10899156B2 Manual binding tray for sheet processing device 有权
公开(公告)号：US10899156B2
公开(公告)日：2021-01-26
申请号：US16232382
申请日：2018-12-26
申请人： Daiki Komiyama , Akihiko Tsukui , Masahiro Maeda
发明人： Daiki Komiyama , Akihiko Tsukui , Masahiro Maeda
IPC分类号： B65H37/04 , B42C9/00 , B31F5/08 , B42C19/02 , B42C1/00 , B42B4/00 , G03G15/00
摘要： A sheet processing apparatus includes alignment plates, which are provided outside a main body housing of a sheet processing apparatus, shift in an alignment direction orthogonal to a transport direction of a sheet loaded on a load tray to load sheets discharged from a discharge opening, and align opposite sides of the sheet, and a sheet support surface provided in a different position adjacent to a processing tray in the alignment direction to support sheets inserted from a manual feed opening provided outside the main body housing. A binding apparatus shifts to the processing tray or the sheet support surface, and binds sheets placed on the processing tray or the sheet support surface. Neat alignment plates are positioned not to block the manual feed opening during the binding processing on manually fed sheets on the sheet support surface.

7. 发明授权

US08279010B2 Radio frequency power amplifier 有权
标题翻译：射频功率放大器
公开(公告)号：US08279010B2
公开(公告)日：2012-10-02
申请号：US13166405
申请日：2011-06-22
申请人： Masato Seki , Masatoshi Kamitani , Katsuhiko Kawashima , Masahiro Maeda
发明人： Masato Seki , Masatoshi Kamitani , Katsuhiko Kawashima , Masahiro Maeda
IPC分类号： H03F3/68
CPC分类号： H03F3/211 , H03F1/22 , H03F1/56 , H03F3/191 , H03F3/72 , H03F2203/21103 , H03F2203/21139 , H03F2203/21175 , H03F2203/7236
摘要： The radio frequency power amplifier is connected between an other end of the first switching element and an other end of the second switching element, supplies power to a second amplifier via the first switching element and a second matching circuit, and includes a first power supply line for supplying power to the third amplifier via a second switching element and a third matching circuit, and the other end of the first switching element is connected to an input node of the first matching circuit, the other end of the second switching element is connected to the input node of the first matching circuit via the first power supply line, and an impedance of an output side of the RF power amplifier as viewed from an output node of the third amplifier is higher than an impedance of the RF power amplifier as viewed from an output node of the second amplifier.
摘要翻译：射频功率放大器连接在第一开关元件的另一端和第二开关元件的另一端之间，经由第一开关元件和第二匹配电路向第二放大器供电，并且包括第一电源线用于经由第二开关元件和第三匹配电路向第三放大器供电，并且第一开关元件的另一端连接到第一匹配电路的输入节点，第二开关元件的另一端连接到经由第一电源线的第一匹配电路的输入节点和从第三放大器的输出节点观察的RF功率放大器的输出侧的阻抗高于从RF功率放大器的阻抗第二放大器的输出节点。

8. 发明授权

US08134409B2 Radio frequency power amplifier 失效
标题翻译：射频功率放大器
公开(公告)号：US08134409B2
公开(公告)日：2012-03-13
申请号：US12823474
申请日：2010-06-25
申请人： Masato Seki , Masahiro Maeda , Masatosi Kamitani
发明人： Masato Seki , Masahiro Maeda , Masatosi Kamitani
IPC分类号： H03F3/68
CPC分类号： H03F3/195 , H03F1/0205 , H03F1/56 , H03F3/60 , H03F2200/451
摘要： A radio frequency power amplifier includes an input terminal to which a radio frequency signal is applied; a first hetero-bipolar transistor (HBT), which amplifies the radio frequency signal; a second HBT, which amplifies the radio frequency signal; a matching circuit connected to an output node of the second HBT; a switch connected to an output node of the matching circuit; and an output matching circuit connected to an output node of the first HBT. The output node of the switch is connected to the output node of the first HBT via the output matching circuit, and an impedance looking into an output side of the radio frequency power amplifier from the output node of the switch is higher than an impedance looking into the output side of the radio frequency power amplifier from the output node of the first HBT.
摘要翻译：射频功率放大器包括施加射频信号的输入端子; 放大射频信号的第一异质双极晶体管（HBT）; 第二个HBT放大射频信号; 连接到第二HBT的输出节点的匹配电路; 连接到匹配电路的输出节点的开关; 以及连接到第一HBT的输出节点的输出匹配电路。开关的输出节点经由输出匹配电路连接到第一HBT的输出节点，并且从开关的输出节点看入射频功率放大器的输出侧的阻抗高于阻抗射频功率放大器的输出端从第一个HBT的输出节点。

9. 发明授权

US08081911B2 Development roller, development device, and image forming apparatus 失效
标题翻译：显影辊，显影装置和成像装置
公开(公告)号：US08081911B2
公开(公告)日：2011-12-20
申请号：US12388857
申请日：2009-02-19
申请人： Yoichi Yamada , Masahiro Maeda , Junichi Suzuki , Takatomo Fukumoto
发明人： Yoichi Yamada , Masahiro Maeda , Junichi Suzuki , Takatomo Fukumoto
IPC分类号： G03G15/08
CPC分类号： G03G15/0818
摘要： A development roller includes a base unit having a base recess and a base projection formed in a predetermined area of a circumference surface of the base unit, and a surface layer formed on the circumference surface of the base unit and having a recess and a projection formed respectively in accordance with the base recess and the base projection of the base unit.
摘要翻译：显影辊包括：基座单元，具有形成在基座单元的圆周表面的预定区域中的基部凹部和基部突起;以及基底单元的圆周表面上形成的凹部和突起，分别根据基部凹部和基部单元的基底突起。

10. 发明授权

US07960758B2 Bipolar transistor and radio frequency amplifier circuit 失效
标题翻译：双极晶体管和射频放大电路
公开(公告)号：US07960758B2
公开(公告)日：2011-06-14
申请号：US11395129
申请日：2006-04-03
申请人： Masahiro Maeda
发明人： Masahiro Maeda
IPC分类号： H01L29/66
CPC分类号： H03F3/68 , H03F3/19
摘要： A bipolar transistor and a radio frequency amplifier circuit capable of preventing thermal runaway in the bipolar transistor without affecting the radio frequency amplifier circuit, which includes: a direct-current (DC) bias terminal to which a DC bias is supplied; a DC base electrode connected to the DC terminal; a radio frequency (RF) power terminal to which a radio frequency signal is supplied; an RF base electrode connected to the RF terminal; and a base layer connected to the DC base electrode and the RF base electrode.
摘要翻译：一种双极晶体管和射频放大器电路，其能够防止双极晶体管的热失控而不影响射频放大器电路，其包括：提供直流偏压的直流（DC）偏置端子; 连接到DC端子的DC基极; 提供射频信号的射频（RF）电源端子; 连接到RF终端的RF基极; 以及连接到DC基极和RF基极的基底层。

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