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1. 发明授权

US08673697B2 Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same 有权
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08673697B2
公开(公告)日：2014-03-18
申请号：US13100979
申请日：2011-05-04
申请人： Moon-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
发明人： Moon-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
IPC分类号： H01L21/00
CPC分类号： H01L29/4908 , H01L29/66757
摘要： A method of fabricating a thin film transistor, comprising steps of preparing a substrate; forming a polycrystalline silicon layer on the substrate; injecting impurities into the polycrystalline silicon layer for channel doping; patterning the polycrystalline silicon layer and forming a semiconductor layer; annealing the semiconductor layer in an H2O atmosphere, and forming a thermal oxide layer on the semiconductor layer; forming a silicon nitride layer on the thermal oxide layer; forming a gate electrode at a location corresponding to a predetermined region of the semiconductor layer; forming an interlayer insulating layer on the entire surface of the substrate; and forming source and drain electrodes electrically connected with the semiconductor layer.
摘要翻译：一种制造薄膜晶体管的方法，包括制备衬底的步骤; 在所述基板上形成多晶硅层; 将杂质注入用于沟道掺杂的多晶硅层中; 图案化多晶硅层并形成半导体层; 在H 2 O气氛中退火半导体层，并在半导体层上形成热氧化物层; 在所述热氧化物层上形成氮化硅层; 在对应于半导体层的预定区域的位置处形成栅电极; 在所述基板的整个表面上形成层间绝缘层; 以及形成与半导体层电连接的源极和漏极。

2. 发明申请

US20110207268A1 Thin Film Transistor, Method of Fabricating the Same and Organic Light Emitting Diode Display Device Having the Same 有权
标题翻译：薄膜晶体管，其制造方法和具有相同功能的有机发光二极管显示装置
公开(公告)号：US20110207268A1
公开(公告)日：2011-08-25
申请号：US13100979
申请日：2011-05-04
申请人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
发明人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L29/66757
摘要： A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.
摘要翻译：具有改进的特性的薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管（OLED）显示装置。薄膜晶体管包括：衬底，设置在衬底上并包括沟道区的半导体层，以及源极和漏极区，掺杂有杂质的沟道区，设置在半导体层上的热氧化物层，设置有氮化硅层在所述热氧化物层上，设置在所述氮化硅层上并对应于所述半导体层的预定区域的栅极电极，设置在所述基板的整个表面上的层间绝缘层以及与所述半导体层电连接的源极和漏极。

3. 发明申请

US20090184632A1 Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same 审中-公开
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US20090184632A1
公开(公告)日：2009-07-23
申请号：US12320110
申请日：2009-01-16
申请人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
发明人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
IPC分类号： H01J1/62 , H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L29/66757
摘要： A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.
摘要翻译：具有改进的特性的薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管（OLED）显示装置。薄膜晶体管包括：衬底，设置在衬底上并包括沟道区的半导体层，以及源极和漏极区，掺杂有杂质的沟道区，设置在半导体层上的热氧化物层，设置有氮化硅层在所述热氧化物层上，设置在所述氮化硅层上并对应于所述半导体层的预定区域的栅极电极，设置在所述基板的整个表面上的层间绝缘层以及与所述半导体层电连接的源极和漏极。

4. 发明授权

US08502211B2 Organic light emitting diode display and manufacturing method thereof 失效
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US08502211B2
公开(公告)日：2013-08-06
申请号：US13172753
申请日：2011-06-29
申请人： Dae-Woo Lee , Han-Hee Yoon , Kyoung-Bo Kim
发明人： Dae-Woo Lee , Han-Hee Yoon , Kyoung-Bo Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/3267 , H01L27/3246 , H01L27/3258 , H01L51/5206
摘要： An organic light emitting diode display includes: a substrate having first and second regions; a first thin film transistor (TFT) including source and drain electrodes at the first region; a second TFT including source and drain electrodes at the second region; a protective layer on the first and second TFTs; a planarization layer pattern on the protective layer; a first pixel electrode electrically connected to the source electrode or the drain electrode of the first TFT through a first via contact hole through the protective layer; and a second pixel electrode electrically connected to the source electrode or the drain electrode of the second TFT through a second via contact hole formed through the protective layer and the planarization layer pattern, the planarization layer pattern corresponding to a shape of the second pixel electrode and located between the protective layer and the second pixel electrode.
摘要翻译：有机发光二极管显示器包括：具有第一和第二区域的基板; 在所述第一区域包括源电极和漏电极的第一薄膜晶体管（TFT）; 第二TFT，包括在第二区域的源极和漏极; 第一和第二TFT上的保护层; 保护层上的平坦化图案; 第一像素电极，通过穿过保护层的第一通孔接触孔电连接到第一TFT的源电极或漏电极; 以及第二像素电极，其通过形成在保护层和平坦化图案上的第二通孔接触孔与第二TFT的源电极或漏电极电连接，平坦化图案对应于第二像素电极的形状，位于保护层和第二像素电极之间。

5. 发明授权

US08183562B2 Organic light emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08183562B2
公开(公告)日：2012-05-22
申请号：US12636303
申请日：2009-12-11
申请人： Ki-Ju Im , Yong-Sung Park , Yong-Woo Park , Moo-Jin Kim , Han-Hee Yoon , Kwang-Hae Kim , Sung-Won Doh , Kyoung-Bo Kim , Gun-Shik Kim , Jun-Sik Oh
发明人： Ki-Ju Im , Yong-Sung Park , Yong-Woo Park , Moo-Jin Kim , Han-Hee Yoon , Kwang-Hae Kim , Sung-Won Doh , Kyoung-Bo Kim , Gun-Shik Kim , Jun-Sik Oh
IPC分类号： H01L51/50
CPC分类号： H01L27/3269 , G06F3/0412 , G06F3/042
摘要： An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.
摘要翻译：有机发光显示装置包括有机发光二极管，光传感器和遮光部。遮光部位于光传感器的至少一侧，使得从有机发光二极管发射的光不直接入射到光传感器上。

6. 发明授权

US08367278B2 Halftone mask and manufacturing method thereof and method for forming film using the same 有权
标题翻译：半色调掩模及其制造方法和使用其形成膜的方法
公开(公告)号：US08367278B2
公开(公告)日：2013-02-05
申请号：US12824086
申请日：2010-06-25
申请人： Oh-Seob Kwon , Jae-Yong Kim , Sung-Chul Kim , Kyoung-Bo Kim , Il-Jeong Lee , Cheol-Ho Yu , Yong-Woo Park , Han-Hee Yoon , In-Young Jung
发明人： Oh-Seob Kwon , Jae-Yong Kim , Sung-Chul Kim , Kyoung-Bo Kim , Il-Jeong Lee , Cheol-Ho Yu , Yong-Woo Park , Han-Hee Yoon , In-Young Jung
IPC分类号： G03F1/32
CPC分类号： G03F1/50
摘要： Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit.
摘要翻译：实施例涉及可以在彼此间隔开的两个区域中均匀地形成下层的高度的半色调掩模，其制造方法和使用其形成膜的方法。半色调掩模包括第一遮光单元和第二遮光单元，以及邻近第二遮光单元的一侧设置的半透射单元。第一和第二光阻挡单元阻挡光并以预定间隔彼此间隔开。半透射单元位于远离第一遮光单元的一侧，并且减小光的强度。第二遮光单元的第二长度和半透射单元的第三长度之和大于第一遮光单元的第一长度。

7. 发明申请

US20120001185A1 Organic Light Emitting Diode Display and Manufacturing Method Thereof 失效
标题翻译：有机发光二极管显示及制造方法
公开(公告)号：US20120001185A1
公开(公告)日：2012-01-05
申请号：US13172753
申请日：2011-06-29
申请人： Dae-Woo Lee , Han-Hee Yoon , Kyoung-Bo Kim
发明人： Dae-Woo Lee , Han-Hee Yoon , Kyoung-Bo Kim
IPC分类号： H01L33/08
CPC分类号： H01L27/3267 , H01L27/3246 , H01L27/3258 , H01L51/5206
摘要： An organic light emitting diode display includes: a substrate having first and second regions; a first thin film transistor (TFT) including source and drain electrodes at the first region; a second TFT including source and drain electrodes at the second region; a protective layer on the first and second TFTs; a planarization layer pattern on the protective layer; a first pixel electrode electrically connected to the source electrode or the drain electrode of the first TFT through a first via contact hole through the protective layer; and a second pixel electrode electrically connected to the source electrode or the drain electrode of the second TFT through a second via contact hole formed through the protective layer and the planarization layer pattern, the planarization layer pattern corresponding to a shape of the second pixel electrode and located between the protective layer and the second pixel electrode.
摘要翻译：有机发光二极管显示器包括：具有第一和第二区域的基板; 在所述第一区域包括源电极和漏电极的第一薄膜晶体管（TFT）; 第二TFT，包括在第二区域的源极和漏极; 第一和第二TFT上的保护层; 保护层上的平坦化图案; 第一像素电极，通过穿过保护层的第一通孔接触孔电连接到第一TFT的源电极或漏电极; 以及第二像素电极，其通过形成在保护层和平坦化图案上的第二通孔接触孔与第二TFT的源电极或漏电极电连接，平坦化图案对应于第二像素电极的形状，位于保护层和第二像素电极之间。

8. 发明申请

US20100330468A1 HALFTONE MASK AND MANUFACTURING METHOD THEREOF AND METHOD FOR FORMING FILM USING THE SAME 有权
标题翻译：黑龙骨掩模及其制造方法及使用其形成膜的方法
公开(公告)号：US20100330468A1
公开(公告)日：2010-12-30
申请号：US12824086
申请日：2010-06-25
申请人： Oh-Seob Kwon , Jae-Yong Kim , Sung-Chul Kim , Kyoung-Bo Kim , Il-Jeong Lee , Cheol-Ho Yu , Yong-Woo Park , Han-Hee Yoon , In-Young Jung
发明人： Oh-Seob Kwon , Jae-Yong Kim , Sung-Chul Kim , Kyoung-Bo Kim , Il-Jeong Lee , Cheol-Ho Yu , Yong-Woo Park , Han-Hee Yoon , In-Young Jung
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： G03F1/50
摘要： Embodiments relate to halftone masks that can uniformly form the height of an underlying layer in two regions that are spaced apart from each other, a manufacturing method thereof, and a method for forming a film using the same. The halftone mask includes a first light blocking unit and a second light blocking unit, and a semi-transmitting unit that is disposed adjacent to the side of the second light blocking unit. The first and second light blocking units block light and are spaced apart from each other at a predetermined interval. The semi-transmitting unit is positioned at a side far from the first light blocking unit and reduces intensity of light. Sum of the second length of the second light blocking unit and the third length of the semi-transmitting unit is larger than the first length of the first blocking unit.
摘要翻译：实施例涉及可以在彼此间隔开的两个区域中均匀地形成下层的高度的半色调掩模，其制造方法和使用其形成膜的方法。半色调掩模包括第一遮光单元和第二遮光单元，以及邻近第二遮光单元的一侧设置的半透射单元。第一和第二光阻挡单元阻挡光并以预定间隔彼此间隔开。半透射单元位于远离第一遮光单元的一侧，并且减小光的强度。第二遮光单元的第二长度和半透射单元的第三长度之和大于第一遮光单元的第一长度。

9. 发明申请

US20100148163A1 ORGANIC LIGHT EMITTING DISPLAY APPARATUS 有权
标题翻译：有机发光显示装置
公开(公告)号：US20100148163A1
公开(公告)日：2010-06-17
申请号：US12636303
申请日：2009-12-11
申请人： Ki-Ju Im , Yong-Sung Park , Yong-Woo Park , Moo-Jin Kim , Han-Hee Yoon , Kwang-Hae Kim , Sung-Won Doh , Kyoung-Bo Kim , Gun-Shik Kim , Jun-Sik Oh
发明人： Ki-Ju Im , Yong-Sung Park , Yong-Woo Park , Moo-Jin Kim , Han-Hee Yoon , Kwang-Hae Kim , Sung-Won Doh , Kyoung-Bo Kim , Gun-Shik Kim , Jun-Sik Oh
IPC分类号： H01L51/50
CPC分类号： H01L27/3269 , G06F3/0412 , G06F3/042
摘要： An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.
摘要翻译：有机发光显示装置包括有机发光二极管，光传感器和遮光部。遮光部位于光传感器的至少一侧，使得从有机发光二极管发射的光不直接入射到光传感器上。

10. 发明授权

US07733306B2 SRAM core cell for light-emitting display 失效
标题翻译： SRAM核心单元用于发光显示
公开(公告)号：US07733306B2
公开(公告)日：2010-06-08
申请号：US11132119
申请日：2005-05-17
申请人： Han-Hee Yoon
发明人： Han-Hee Yoon
IPC分类号： G09G3/30
CPC分类号： G11C11/412 , G09G3/3225 , G09G3/3275 , H01L27/0207 , H01L27/11 , H01L27/1108
摘要： A SRAM core cell for a light-emitting display applicable to a data driver of an organic electro-luminescence light-emitting display device includes thin film transistors as a data memory for a data driver of the light-emitting display. The SRAM core cell also includes switching transistors and data memory transistors. The switching transistors are coupled to a bit line and a word line to select data writing or reading. The data memory transistors are coupled to a power voltage or a ground voltage to enable data writing and reading. The bit line and the word line are formed in first and second directions. The channels of the switching transistors and the data memory transistors are formed in an oblique direction with respect to the first and second directions.
摘要翻译：适用于有机电致发光显示装置的数据驱动器的用于发光显示器的SRAM核心单元包括作为发光显示器的数据驱动器的数据存储器的薄膜晶体管。 SRAM核心单元还包括开关晶体管和数据存储晶体管。开关晶体管耦合到位线和字线以选择数据写入或读取。数据存储晶体管耦合到电源电压或接地电压，以便数据写入和读取。位线和字线形成在第一和第二方向上。开关晶体管和数据存储晶体管的沟道相对于第一和第二方向形成在倾斜方向上。

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