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1. 发明授权

US08183562B2 Organic light emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08183562B2
公开(公告)日：2012-05-22
申请号：US12636303
申请日：2009-12-11
申请人： Ki-Ju Im , Yong-Sung Park , Yong-Woo Park , Moo-Jin Kim , Han-Hee Yoon , Kwang-Hae Kim , Sung-Won Doh , Kyoung-Bo Kim , Gun-Shik Kim , Jun-Sik Oh
发明人： Ki-Ju Im , Yong-Sung Park , Yong-Woo Park , Moo-Jin Kim , Han-Hee Yoon , Kwang-Hae Kim , Sung-Won Doh , Kyoung-Bo Kim , Gun-Shik Kim , Jun-Sik Oh
IPC分类号： H01L51/50
CPC分类号： H01L27/3269 , G06F3/0412 , G06F3/042
摘要： An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.
摘要翻译：有机发光显示装置包括有机发光二极管，光传感器和遮光部。遮光部位于光传感器的至少一侧，使得从有机发光二极管发射的光不直接入射到光传感器上。

2. 发明申请

US20100148163A1 ORGANIC LIGHT EMITTING DISPLAY APPARATUS 有权
标题翻译：有机发光显示装置
公开(公告)号：US20100148163A1
公开(公告)日：2010-06-17
申请号：US12636303
申请日：2009-12-11
申请人： Ki-Ju Im , Yong-Sung Park , Yong-Woo Park , Moo-Jin Kim , Han-Hee Yoon , Kwang-Hae Kim , Sung-Won Doh , Kyoung-Bo Kim , Gun-Shik Kim , Jun-Sik Oh
发明人： Ki-Ju Im , Yong-Sung Park , Yong-Woo Park , Moo-Jin Kim , Han-Hee Yoon , Kwang-Hae Kim , Sung-Won Doh , Kyoung-Bo Kim , Gun-Shik Kim , Jun-Sik Oh
IPC分类号： H01L51/50
CPC分类号： H01L27/3269 , G06F3/0412 , G06F3/042
摘要： An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.
摘要翻译：有机发光显示装置包括有机发光二极管，光传感器和遮光部。遮光部位于光传感器的至少一侧，使得从有机发光二极管发射的光不直接入射到光传感器上。

3. 发明授权

US08283851B2 Organic light-emitting display apparatus 有权
标题翻译：有机发光显示装置
公开(公告)号：US08283851B2
公开(公告)日：2012-10-09
申请号：US12427885
申请日：2009-04-22
申请人： Young-Dae Kim , Kyoung-Bo Kim , Moo-Jin Kim , Cheol-Su Kim , Hye-Dong Kim , Ki-Ju Im , Yong-Sung Park , Gun-Shik Kim , Jun-Sik Oh , Brent Jang , Sang-Uk Kim
发明人： Young-Dae Kim , Kyoung-Bo Kim , Moo-Jin Kim , Cheol-Su Kim , Hye-Dong Kim , Ki-Ju Im , Yong-Sung Park , Gun-Shik Kim , Jun-Sik Oh , Brent Jang , Sang-Uk Kim
IPC分类号： H05B33/24
CPC分类号： H01L27/3244 , G06F3/0412 , G06F3/0421 , H01L27/3227 , H01L27/323
摘要： An organic light-emitting display apparatus having a touch panel operation. The organic light-emitting display apparatus includes: a substrate; a display unit disposed on the substrate; an encapsulation substrate disposed above the display unit; a reflection layer formed on the substrate; and a photo sensor interposed between the reflection layer and the encapsulation substrate, and to detect light striking an object disposed on the encapsulation substrate.
摘要翻译：一种具有触摸面板操作的有机发光显示装置。有机发光显示装置包括：基板; 设置在所述基板上的显示单元; 设置在所述显示单元上方的封装基板; 形成在基板上的反射层; 以及插入在所述反射层和所述封装基板之间的光电传感器，并且检测撞击设置在所述封装基板上的物体的光。

4. 发明申请

US20110207268A1 Thin Film Transistor, Method of Fabricating the Same and Organic Light Emitting Diode Display Device Having the Same 有权
标题翻译：薄膜晶体管，其制造方法和具有相同功能的有机发光二极管显示装置
公开(公告)号：US20110207268A1
公开(公告)日：2011-08-25
申请号：US13100979
申请日：2011-05-04
申请人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
发明人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L29/66757
摘要： A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.
摘要翻译：具有改进的特性的薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管（OLED）显示装置。薄膜晶体管包括：衬底，设置在衬底上并包括沟道区的半导体层，以及源极和漏极区，掺杂有杂质的沟道区，设置在半导体层上的热氧化物层，设置有氮化硅层在所述热氧化物层上，设置在所述氮化硅层上并对应于所述半导体层的预定区域的栅极电极，设置在所述基板的整个表面上的层间绝缘层以及与所述半导体层电连接的源极和漏极。

5. 发明申请

US20090184632A1 Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same 审中-公开
标题翻译：薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US20090184632A1
公开(公告)日：2009-07-23
申请号：US12320110
申请日：2009-01-16
申请人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
发明人： Moo-Jin Kim , Kyoung-Bo Kim , Ki-Yong Lee , Han-Hee Yoon
IPC分类号： H01J1/62 , H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L29/66757
摘要： A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.
摘要翻译：具有改进的特性的薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管（OLED）显示装置。薄膜晶体管包括：衬底，设置在衬底上并包括沟道区的半导体层，以及源极和漏极区，掺杂有杂质的沟道区，设置在半导体层上的热氧化物层，设置有氮化硅层在所述热氧化物层上，设置在所述氮化硅层上并对应于所述半导体层的预定区域的栅极电极，设置在所述基板的整个表面上的层间绝缘层以及与所述半导体层电连接的源极和漏极。

6. 发明申请

US20080295772A1 CHEMICAL VAPOR DEPOSITION APPARATUS AND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS 审中-公开
标题翻译：化学蒸气沉积装置和等离子体增强化学气相沉积装置
公开(公告)号：US20080295772A1
公开(公告)日：2008-12-04
申请号：US12122904
申请日：2008-05-19
申请人： Yong-Woo PARK , Kyoung-Bo Kim , Moo-Jin Kim
发明人： Yong-Woo PARK , Kyoung-Bo Kim , Moo-Jin Kim
IPC分类号： C23C16/44
CPC分类号： C23C16/4401 , H01J37/32623 , H01J37/32697
摘要： A chemical vapor deposition (CVD) apparatus and a plasma enhanced chemical vapor deposition (PECVD) apparatus that reduce the number of fine particles inside a chamber. The CVD and the PECVD apparatuses each include a chamber; a gas injection unit that injects a gas into the chamber; a gas exhaust unit that exhausts the gas to the outside of the chamber, and is positioned facing the gas injection unit; a film formation unit that incorporates a film formation region on which a film is formed from the gas, and is positioned between the gas injection unit and the gas exhaust unit; and a electrostatic induction unit, which is positioned around a region corresponding to the film formation region in order not to overlap with the film formation region, and is connected to a voltage source that is insulated from the chamber.
摘要翻译：化学气相沉积（CVD）装置和等离子体增强化学气相沉积（PECVD）装置，其减少室内细颗粒的数量。 CVD和PECVD装置各自包括室; 气体注入单元，其将气体注入到所述室中; 气体排出单元，其将气体排出到室的外部，并且被定位成面向气体注入单元; 成膜单元，其包括从气体形成有膜的成膜区域，并且位于气体注入单元和排气单元之间; 以及静电感应单元，其被设置在与成膜区域相对应的区域周围，以便不与成膜区域重叠，并且连接到与腔室绝缘的电压源。

7. 发明授权

US08530341B2 Method of manufacturing organic light emitting diode display 有权
标题翻译：制造有机发光二极管显示器的方法
公开(公告)号：US08530341B2
公开(公告)日：2013-09-10
申请号：US12948139
申请日：2010-11-17
申请人： Kwang-Hae Kim , Moo-Jin Kim
发明人： Kwang-Hae Kim , Moo-Jin Kim
IPC分类号： H01L21/20
CPC分类号： H01L29/66757 , H01L27/1285 , H01L27/3262
摘要： A method of manufacturing an organic light emitting diode display, the method including forming an amorphous silicon layer on a buffer layer disposed on substrate, heat-treating the amorphous silicon film to form a microcrystalline silicon film; and scanning and irradiating a linear laser beam twice or more onto the microcrystalline silicon film to form a polysilicon film, wherein a subsequent scanning of the linear laser beam partially overlaps previous scanning of the linear laser beam in a width direction.
摘要翻译：一种制造有机发光二极管显示器的方法，所述方法包括在设置在基板上的缓冲层上形成非晶硅层，对非晶硅膜进行热处理以形成微晶硅膜; 并且将线性激光束扫描并照射到微晶硅膜上以形成多晶硅膜，其中线性激光束的随后扫描部分地与线性激光束的先前扫描沿宽度方向重叠。

8. 发明授权

US08227326B2 Laser crystallization of amorphous silicon layer 有权
标题翻译：非晶硅层的激光结晶
公开(公告)号：US08227326B2
公开(公告)日：2012-07-24
申请号：US12970580
申请日：2010-12-16
申请人： Kwang-Hae Kim , Moo-Jin Kim
发明人： Kwang-Hae Kim , Moo-Jin Kim
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L27/1277 , H01L29/66757
摘要： A crystallization method, a method of manufacturing a thin-film transistor, and a method of manufacturing a display device are provided. The crystallization method includes: forming a backup amorphous silicon layer on a substrate, forming nickel particles on the backup amorphous silicon layer, converting the backup amorphous silicon layer into an amorphous silicon layer by thermally processing the backup amorphous silicon layer so as to diffuse the nickel particles throughout said backup amorphous silicon layer; and irradiating the amorphous silicon layer with energy from a laser.
摘要翻译：提供了一种结晶方法，一种制造薄膜晶体管的方法和一种制造显示装置的方法。结晶方法包括：在衬底上形成备用非晶硅层，在备用非晶硅层上形成镍颗粒，通过热处理备用非晶硅层将备用非晶硅层转化为非晶硅层，以使镍整个所述备用非晶硅层的颗粒; 并用激光照射非晶硅层。

9. 发明申请

US20110151601A1 CRYSTALLIZATION METHOD, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING DISPLAY DEVICE 有权
标题翻译：结晶方法，制造薄膜晶体管的方法和制造显示器件的方法
公开(公告)号：US20110151601A1
公开(公告)日：2011-06-23
申请号：US12970580
申请日：2010-12-16
申请人： Kwang-Hae Kim , Moo-Jin Kim
发明人： Kwang-Hae Kim , Moo-Jin Kim
IPC分类号： H01L33/00 , H01L21/84 , H01L21/225
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L27/1277 , H01L29/66757
摘要： A crystallization method, a method of manufacturing a thin-film transistor, and a method of manufacturing a display device are provided. The crystallization method comprises: forming a backup amorphous silicon layer on a substrate, forming nickel particles on the backup amorphous silicon layer, converting the backup amorphous silicon layer into an amorphous silicon layer by thermally processing the backup amorphous silicon layer so as to diffuse the nickel particles throughout said backup amorphous silicon layer; and irradiating the amorphous silicon layer with energy from a laser.
摘要翻译：提供了一种结晶方法，一种制造薄膜晶体管的方法和一种制造显示装置的方法。结晶方法包括：在衬底上形成备用非晶硅层，在备用非晶硅层上形成镍颗粒，通过热处理后备非晶硅层将备用非晶硅层转化为非晶硅层，以使镍整个所述备用非晶硅层的颗粒; 并用激光照射非晶硅层。

10. 发明申请

US20080135893A1 Thin film transistor, method of fabricating the same, and display device including the same 审中-公开
标题翻译：薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置
公开(公告)号：US20080135893A1
公开(公告)日：2008-06-12
申请号：US11987951
申请日：2007-12-06
申请人： Hye-Hyang Park , Byoung-Deog Choi , Dae-Woo Lee , Chang-Young Jeong , Moo-Jin Kim , Kyoung-Bo Kim
发明人： Hye-Hyang Park , Byoung-Deog Choi , Dae-Woo Lee , Chang-Young Jeong , Moo-Jin Kim , Kyoung-Bo Kim
IPC分类号： H01L29/78 , H01L21/84
CPC分类号： H01L29/4908 , H01L27/1214 , H01L29/66757
摘要： A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer.
摘要翻译：薄膜晶体管包括衬底，衬底上的半导体层，半导体层上的热氧化物层，热氧化层上的栅电极，位于半导体层的沟道区上的栅电极，中间层绝缘层，以及与半导体层电连接的源极和漏极。

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