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1. 发明授权

US08080480B2 Method of forming fine patterns and manufacturing semiconductor light emitting device using the same 有权
标题翻译：形成精细图案的方法和制造使用其的半导体发光器件
公开(公告)号：US08080480B2
公开(公告)日：2011-12-20
申请号：US12239122
申请日：2008-09-26
申请人： Jong Ho Lee , Moo Youn Park , Soo Ryong Hwang , Il Hyung Jung , Gwan Su Lee , Jin Ha Kim
发明人： Jong Ho Lee , Moo Youn Park , Soo Ryong Hwang , Il Hyung Jung , Gwan Su Lee , Jin Ha Kim
IPC分类号： H01L21/302
CPC分类号： H01L33/20 , H01L21/30617 , H01L21/30621 , H01L21/3083 , H01L33/22 , H01L33/382
摘要： A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern on the semiconductor crystal. The semiconductor crystal including the first fine pattern is wet-etched to expand the first fine pattern in a horizontal direction to form a second fine pattern. The second fine pattern obtained in the wet-etching the semiconductor crystal has a bottom surface and a sidewall that have unique crystal planes, respectively. The present fine-pattern forming process can be advantageously applied to a semiconductor light emitting device, particularly, to a phonic crystal structure required to have fine patterns or a structure using a surface plasmon resonance principle.
摘要翻译：形成精细图案的方法开始于提供c面六边形半导体晶体。在半导体晶体上形成具有预定图案的掩模。通过使用掩模对半导体晶体进行干蚀刻以在半导体晶体上形成第一精细图案。包括第一精细图案的半导体晶体被湿蚀刻以在第一精细图案沿水平方向扩展以形成第二精细图案。在半导体晶体的湿式蚀刻中获得的第二精细图案分别具有独特的晶面的底面和侧壁。本发明的精细图案形成方法可以有利地应用于半导体发光器件，特别是应用于具有精细图案所需的语音晶体结构或使用表面等离子体共振原理的结构。

2. 发明授权

US08198609B2 Apparatus for forming nano pattern and method for forming the nano pattern using the same 有权
标题翻译：用于形成纳米图案的装置和使用其形成纳米图案的方法
公开(公告)号：US08198609B2
公开(公告)日：2012-06-12
申请号：US12219547
申请日：2008-07-23
申请人： Moo Youn Park , Jin Ha Kim , Soo Ryong Hwang , Il Hyung Jung , Jong Ho Lee
发明人： Moo Youn Park , Jin Ha Kim , Soo Ryong Hwang , Il Hyung Jung , Jong Ho Lee
IPC分类号： G21G1/00
CPC分类号： G03F7/70408 , G02B5/1857
摘要： The present invention relates to an apparatus for forming a nano pattern capable of fabricating the uniform nano pattern at a low cost including a laser for generating a beam; a beam splitter for splitting the beam from the laser into two beams with the same intensity; variable mirrors for reflecting the two beams split by the beam splitter to a substrate; beam expansion units for expanding diameters of the beams by being positioned on paths of the two beams traveling toward the substrate; and a beam blocking unit, installed on an upper part of the substrate, transmitting only a specific region expanded through the beam expansion unit and blocking regions a remaining region, and a method for forming the nano pattern using the same.
摘要翻译：本发明涉及一种用于形成能够以低成本制造均匀纳米图案的纳米图案的装置，包括用于产生光束的激光器; 用于将来自激光束的光束分成具有相同强度的两个光束的分束器; 用于将由分束器分裂的两束光反射到基板的可变镜; 光束扩展单元，用于通过定位在朝向基板行进的两个光束的路径上来扩展光束的直径; 以及安装在基板的上部的光束阻挡单元，仅透射通过光束扩展单元扩展的特定区域和阻挡区域的剩余区域，以及使用其形成纳米图案的方法。

3. 发明申请

US20090039293A1 Apparatus for forming nano pattern and method for forming the nano pattern using the same 有权
标题翻译：用于形成纳米图案的装置和使用其形成纳米图案的方法
公开(公告)号：US20090039293A1
公开(公告)日：2009-02-12
申请号：US12219547
申请日：2008-07-23
申请人： Meo Youn Park , Jin Ha Kim , Soo Ryong Hwang , Il Hyung Jung , Jong Ho Lee
发明人： Meo Youn Park , Jin Ha Kim , Soo Ryong Hwang , Il Hyung Jung , Jong Ho Lee
IPC分类号： G21K5/04
CPC分类号： G03F7/70408 , G02B5/1857
摘要： The present invention relates to an apparatus for forming a nano pattern capable of fabricating the uniform nano pattern at a low cost including a laser for generating a beam; a beam splitter for splitting the beam from the laser into two beams with the same intensity; variable mirrors for reflecting the two beams split by the beam splitter to a substrate; beam expansion units for expanding diameters of the beams by being positioned on paths of the two beams traveling toward the substrate; and a beam blocking unit, installed on an upper part of the substrate, transmitting only a specific region expanded through the beam expansion unit and blocking regions a remaining region, and a method for forming the nano pattern using the same.
摘要翻译：本发明涉及一种用于形成能够以低成本制造均匀纳米图案的纳米图案的装置，包括用于产生光束的激光; 用于将来自激光束的光束分成具有相同强度的两个光束的分束器; 用于将由分束器分裂的两束光反射到基板的可变镜; 光束扩展单元，用于通过定位在朝向基板行进的两个光束的路径上来扩展光束的直径; 以及安装在基板的上部的光束阻挡单元，仅透射通过光束扩展单元扩展的特定区域和阻挡区域的剩余区域，以及使用其形成纳米图案的方法。

4. 发明授权

US08269238B2 Photonic crystal light emitting device using photon-recycling 有权
标题翻译：光子晶体发光器件采用光子回收
公开(公告)号：US08269238B2
公开(公告)日：2012-09-18
申请号：US12007495
申请日：2008-01-11
申请人： Hyun Jun Kim , Chang Hwan Choi , Won Ha Moon , Jong Ho Lee , Jae Chul Yong , Jin Ha Kim
发明人： Hyun Jun Kim , Chang Hwan Choi , Won Ha Moon , Jong Ho Lee , Jae Chul Yong , Jin Ha Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/46 , H01L33/502 , H01L33/508 , H01L2224/14 , H01L2933/0083
摘要： A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.
摘要翻译： 1.一种光子晶体发光器件，包括：发光二极管（LED）发光结构，包括第一导电半导体层，第二导电半导体层和插入在所述第一和第二导电半导体层之间的有源层; 以及形成在与所述有源层相反的所述第一导电半导体层的一个表面上的第一光子再循环发光层，其中所述第一光子再循环发光层吸收从所述LED发光结构发射的初级光，并发射光具有与初级光的波长不同的波长，并且在第一光子再循环发光层的整个厚度上形成光子晶体结构。

5. 发明申请

US20080217639A1 Photonic crystal light emitting device using photon-recycling 有权
标题翻译：光子晶体发光器件采用光子回收
公开(公告)号：US20080217639A1
公开(公告)日：2008-09-11
申请号：US12007495
申请日：2008-01-11
申请人： Hyun Jun Kim , Chang Hwan Choi , Won Ha Moon , Jong Ho Lee , Jae Chul Yong , Jin Ha Kim
发明人： Hyun Jun Kim , Chang Hwan Choi , Won Ha Moon , Jong Ho Lee , Jae Chul Yong , Jin Ha Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/46 , H01L33/502 , H01L33/508 , H01L2224/14 , H01L2933/0083
摘要： A photonic crystal light emitting device including: a light emitting diode (LED) light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; and a first photon-recycling light emitting layer formed on one surface of the first conductive semiconductor layer, opposite to the active layer, wherein the first photon-recycling light emitting layer absorbs a primary light emitted from the LED light emitting structure and emits a light having a different wavelength from that of the primary light, and a photonic crystal structure is formed on an entire thickness of the first photon-recycling light emitting layer.
摘要翻译： 1.一种光子晶体发光器件，包括：发光二极管（LED）发光结构，包括第一导电半导体层，第二导电半导体层和插入在所述第一和第二导电半导体层之间的有源层; 以及形成在与所述有源层相反的所述第一导电半导体层的一个表面上的第一光子再循环发光层，其中所述第一光子再循环发光层吸收从所述LED发光结构发射的初级光，并发射光具有与初级光的波长不同的波长，并且在第一光子再循环发光层的整个厚度上形成光子晶体结构。

6. 发明授权

US11223159B2 Safety outlet 有权
公开(公告)号：US11223159B2
公开(公告)日：2022-01-11
申请号：US16674228
申请日：2019-11-05
申请人： Jong Ho Lee
发明人： Jong Ho Lee
IPC分类号： H01R13/52 , H01R33/965 , H01R13/18 , H01R13/10
摘要： Disclosed herein is a safety outlet. The safety outlet includes a casing having at least one hole into which a pin of a plug is inserted; and at least one drain pipe forming a drain channel for independently communicating the at least one hole and the outside of the casing; wherein the drain channel provided in the at least one drain pipe each serves as drain passage separated from each other, and the drain pipe is partitioned so as to maintain sealing between inside of the casing and the drain channel, wherein a contact portion connected to a power terminal arranged outside of the at least one drain pipe is provided in the at least one drain pipe.

7. 发明授权

US09209473B2 Anode-supported solid oxide fuel cell comprising a nanoporous layer having a pore gradient structure, and a production method therefor 有权
标题翻译：阳极负载的固体氧化物燃料电池及其制造方法，具有孔径梯度结构的纳米孔层
公开(公告)号：US09209473B2
公开(公告)日：2015-12-08
申请号：US13256769
申请日：2010-03-16
申请人： Ji-Won Son , Ho-Sung Noh , Hae-Weon Lee , Jong Ho Lee , Hae-Ryoung Kim , Jong Cheol Kim
发明人： Ji-Won Son , Ho-Sung Noh , Hae-Weon Lee , Jong Ho Lee , Hae-Ryoung Kim , Jong Cheol Kim
IPC分类号： H01M8/10 , H01M4/48 , H01M2/08 , H01M2/14 , H01M8/12 , H01M4/86
CPC分类号： H01M8/1206 , H01M4/861 , H01M8/1231 , Y02E60/521 , Y02E60/525 , Y02P70/56
摘要： The present invention relates to a solid oxide fuel cell having a gradient structure in which pore size becomes gradually smaller from a porous electrode to an electrolyte thin film in order to form a dense electrolyte thin film of less than about 2 microns and preferably less than 1 micron on the porous electrode.
摘要翻译：本发明涉及具有梯度结构的固体氧化物燃料电池，其中孔径从多孔电极逐渐变小至电解质薄膜，以形成小于约2微米，优选小于1的致密电解质薄膜微米在多孔电极上。

8. 发明授权

US08630082B2 Multilayer ceramic electronic component and method of manufacturing the same 有权
标题翻译：多层陶瓷电子元件及其制造方法
公开(公告)号：US08630082B2
公开(公告)日：2014-01-14
申请号：US13491192
申请日：2012-06-07
申请人： Jong Ho Lee , Sung Chul Bae , Jae Yeol Choi , Sung Woo Kim , Yu Na Kim
发明人： Jong Ho Lee , Sung Chul Bae , Jae Yeol Choi , Sung Woo Kim , Yu Na Kim
IPC分类号： H01G4/005
CPC分类号： H01G4/30 , H01G4/0085 , H01G4/012 , H01G4/12
摘要： There are provided a multilayer ceramic electronic component and a method of manufacturing the same, the multilayer ceramic electronic including: a ceramic body; and a plurality of internal electrodes laminated within the ceramic body, wherein, when T1 is the greatest distance between an upper outermost internal electrode and a lower outermost internal electrode among the plurality of internal electrodes and T2 is the distance between the highest point and the lowest point in each of the upper outermost internal electrode and the lower outermost internal electrode in a thickness direction of the ceramic body, T2/T1
摘要翻译：提供了一种多层陶瓷电子部件及其制造方法，所述多层陶瓷电子器件包括：陶瓷体; 以及层叠在所述陶瓷体内的多个内部电极，其中，当所述多个内部电极中的最外侧内部电极与最外侧内部电极之间的距离为T1时，T2为最高点与最低点之间的距离在陶瓷体的厚度方向上的最外侧内部电极和下部最外侧的内部电极中的每一个点都满足T2 / T1 <0.05，因此可能抑制多层陶瓷电子部件的内部电极的排列缺陷。

9. 发明申请

US20130151060A1 SYSTEM AND METHOD OF DERIVING PARKING TRAJECTORY FOR VEHICLE 有权
标题翻译：用于车辆的停车场的系统和方法
公开(公告)号：US20130151060A1
公开(公告)日：2013-06-13
申请号：US13488705
申请日：2012-06-05
申请人： Jong Ho Lee , Jae Hwan Jeon
发明人： Jong Ho Lee , Jae Hwan Jeon
IPC分类号： G05D1/02
CPC分类号： B62D15/027 , B60R1/00 , B62D15/0275 , B62D15/0285
摘要： Disclosed herein is a technique of deriving a parking trajectory for a vehicle. In the technique, a first extension straight line, which includes a linear travel path of the vehicle when the vehicle initially goes in reverse from a neutral position of a steering angle, is calculated upon the vehicle being to go in reverse. A final parking location is obtained based on a calculated length of a parking space and a parking target location in the parking space, and a second extension straight line which includes the final parking location is calculated therefrom. When the vehicle going in reverse along the first extension straight line turns and goes in reverse towards the second extension straight line, an intermediate extension straight line connecting the first extension straight line and the second extension straight line is calculated so that the vehicle is aligned with the second extension straight line.
摘要翻译：本文公开了一种导出车辆停车轨迹的技术。在该技术中，当车辆反转时，计算当车辆最初从转向角的中立位置反向转动时包括车辆的线性行进路径的第一延伸直线。基于计算停车空间的长度和驻车空间中的停车目标位置获得最终停车位置，并计算包括最终停车位置的第二延伸直线。当车辆沿着第一延伸直线反向转动并朝向第二延伸直线反转时，计算连接第一延伸直线和第二延伸直线的中间延伸直线，使得车辆与第二条直线延伸。

10. 发明授权

US08304336B2 Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition 有权
标题翻译：使用电感耦合等离子体化学气相沉积制造太阳能电池的方法
公开(公告)号：US08304336B2
公开(公告)日：2012-11-06
申请号：US12605162
申请日：2009-10-23
申请人： Chaehwan Jeong , Jong Ho Lee , Ho-Sung Kim , Seongjae Boo
发明人： Chaehwan Jeong , Jong Ho Lee , Ho-Sung Kim , Seongjae Boo
IPC分类号： H01L21/44
CPC分类号： H01L21/02381 , C23C16/24 , C23C16/507 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02592 , H01L21/0262 , H01L31/03685 , H01L31/03762 , H01L31/03765 , H01L31/03921 , H01L31/075 , H01L31/077 , H01L31/1824 , H01L31/202 , H01L31/204 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H2) gas and silane (SiH4) gas. In the mixed gas, silane gas is in a ratio of 8 to 10 relative to mixed gas.
摘要翻译：一种使用包括第一电极，P层，本征层，N型层和第二电极的电感耦合等离子体化学气相沉积（ICP-CVD）制造太阳能电池的方法。该方法包括通过使用包含氢（H 2）气和硅烷（SiH 4）气体的混合气体的电感耦合等离子体化学气相沉积（ICP-CVD）装置形成包括氢化非晶硅（Si）薄膜的本征层。在混合气体中，相对于混合气体，硅烷气体的比率为8〜10。

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