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1. 发明授权

US07795675B2 Termination for trench MIS device 有权
标题翻译：沟槽MIS器件的终止
公开(公告)号：US07795675B2
公开(公告)日：2010-09-14
申请号：US11233145
申请日：2005-09-21
申请人： Mohamed N. Darwish , Kyle W. Terrill , Jainhai Qi , Qufei Chen
发明人： Mohamed N. Darwish , Kyle W. Terrill , Jainhai Qi , Qufei Chen
IPC分类号： H01L27/088
CPC分类号： H01L29/7813 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/7811
摘要： A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The device can be terminated by a plurality of polysilicon-filled termination trenches located near the edge of the die, with the polysilicon in each termination trench being connected to the mesa adjacent the termination trench.
摘要翻译：沟槽MIS器件形成在覆盖在N外延层和N +衬底上的P外延层中。在一个实施例中，器件包括从沟槽的底部延伸到N外延层的N型漏 - 漂移区。优选地，漏极漂移区域至少部分地通过在沟槽的侧壁上制造间隔物并且在侧壁间隔物之间并通过沟槽的底部注入N型掺杂剂而形成。漏极漂移区可以比在N外延层中形成的常规“漂移区”更重的掺杂。因此，器件具有低导通电阻。该器件可以由位于管芯边缘附近的多个多晶硅填充的端接沟槽端接，每个端接沟槽中的多晶硅与邻近端接沟槽的台面连接。

2. 发明授权

US07435650B2 Process for manufacturing trench MIS device having implanted drain-drift region and thick bottom oxide 有权
标题翻译：用于制造具有注入漏极漂移区域和厚底部氧化物的沟槽MIS器件的工艺
公开(公告)号：US07435650B2
公开(公告)日：2008-10-14
申请号：US10872931
申请日：2004-06-21
申请人： Mohamed N. Darwish , Kyle W. Terrill , Jainhai Qi
发明人： Mohamed N. Darwish , Kyle W. Terrill , Jainhai Qi
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/2253 , H01L21/28185 , H01L21/28194 , H01L21/28211 , H01L21/823487 , H01L29/0634 , H01L29/0847 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/42368
摘要： A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. The thick insulating layer reduces the capacitance between the gate and the drain and therefore improves the ability of the device to operate at high frequencies. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The thick bottom oxide layer is formed on the bottom of the trench while the sidewall spacers are still in place. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The N-epitaxial layer increases the breakdown voltage of the MIS device. In alternative embodiments, the thick bottom oxide layer can be omitted.
摘要翻译：沟槽MIS器件形成在覆盖在N外延层和N +衬底上的P外延层中。在一个实施例中，器件包括在沟槽底部的厚氧化物层和从沟槽的底部延伸到N外延层的N型漏 - 漂移区。厚的绝缘层减小了栅极和漏极之间的电容，从而提高了器件在高频下工作的能力。优选地，漏极漂移区域至少部分地通过在沟槽的侧壁上制造间隔物并且在侧壁间隔物之间并通过沟槽的底部注入N型掺杂剂而形成。厚的底部氧化物层形成在沟槽的底部，同时侧壁间隔物仍然在位。漏极漂移区可以比在N外延层中形成的常规“漂移区”更重的掺杂。因此，器件具有低导通电阻。 N外延层增加了MIS器件的击穿电压。在替代实施例中，可以省略厚的底部氧化物层。

3. 发明授权

US07291884B2 Trench MIS device having implanted drain-drift region and thick bottom oxide 有权
标题翻译：沟槽MIS器件具有植入漏极漂移区域和厚底部氧化物
公开(公告)号：US07291884B2
公开(公告)日：2007-11-06
申请号：US10454031
申请日：2003-06-04
申请人： Mohamed N. Darwish , Kyle W. Terrill , Jainhai Qi
发明人： Mohamed N. Darwish , Kyle W. Terrill , Jainhai Qi
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L21/2253 , H01L21/28185 , H01L21/28194 , H01L21/28211 , H01L21/823487 , H01L29/0634 , H01L29/0847 , H01L29/086 , H01L29/0878 , H01L29/1095 , H01L29/42368
摘要： A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes a thick oxide layer at the bottom of the trench and an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. The thick insulating layer reduces the capacitance between the gate and the drain and therefore improves the ability of the device to operate at high frequencies. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The thick bottom oxide layer is formed on the bottom of the trench while the sidewall spacers are still in place. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The N-epitaxial layer increases the breakdown voltage of the MIS device. In alternative embodiments, the thick bottom oxide layer can be omitted.
摘要翻译：沟槽MIS器件形成在覆盖在N外延层和N +衬底上的P外延层中。在一个实施例中，器件包括在沟槽底部的厚氧化物层和从沟槽的底部延伸到N外延层的N型漏 - 漂移区。厚的绝缘层减小了栅极和漏极之间的电容，从而提高了器件在高频下工作的能力。优选地，漏极漂移区域至少部分地通过在沟槽的侧壁上制造间隔物并且在侧壁间隔物之间并通过沟槽的底部注入N型掺杂剂而形成。厚的底部氧化物层形成在沟槽的底部，同时侧壁间隔物仍然在位。漏极漂移区可以比在N外延层中形成的常规“漂移区”更重的掺杂。因此，器件具有低导通电阻。 N外延层增加了MIS器件的击穿电压。在替代实施例中，可以省略厚的底部氧化物层。

4. 发明授权

US07268032B2 Termination for trench MIS device having implanted drain-drift region 有权
标题翻译：具有植入漏极漂移区域的沟槽MIS器件的端接
公开(公告)号：US07268032B2
公开(公告)日：2007-09-11
申请号：US11232613
申请日：2005-09-21
申请人： Mohamed N. Darwish , Kyle W. Terrill , Jainhai Qi , Qufei Chen
发明人： Mohamed N. Darwish , Kyle W. Terrill , Jainhai Qi , Qufei Chen
IPC分类号： H01L21/8238
CPC分类号： H01L29/7813 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/7811
摘要： A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The device can be terminated by a plurality of polysilicon-filled termination trenches located near the edge of the die, with the polysilicon in each termination trench being connected to the mesa adjacent the termination trench. The polysilicon material in each termination trenches.
摘要翻译：沟槽MIS器件形成在覆盖在N外延层和N +衬底上的P外延层中。在一个实施例中，器件包括从沟槽的底部延伸到N外延层的N型漏 - 漂移区。优选地，漏极漂移区域至少部分地通过在沟槽的侧壁上制造间隔物并且在侧壁间隔物之间并通过沟槽的底部注入N型掺杂剂而形成。漏极漂移区可以比在N外延层中形成的常规“漂移区”更重的掺杂。因此，器件具有低导通电阻。该器件可以由位于管芯边缘附近的多个多晶硅填充的端接沟槽端接，每个端接沟槽中的多晶硅与邻近端接沟槽的台面连接。每个终端沟槽中的多晶硅材料。

5. 发明授权

US07045857B2 Termination for trench MIS device having implanted drain-drift region 有权
公开(公告)号：US07045857B2
公开(公告)日：2006-05-16
申请号：US10810031
申请日：2004-03-26
申请人： Mohamed N. Darwish , Kyle W. Terrill , Jainhai Qi , Qufei Chen
发明人： Mohamed N. Darwish , Kyle W. Terrill , Jainhai Qi , Qufei Chen
IPC分类号： H01L29/76 , H01L29/00
CPC分类号： H01L29/7813 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/7811
摘要： A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The device can be terminated by a plurality of polysilicon-filled termination trenches located near the edge of the die, with the polysilicon in each termination trench being connected to the mesa adjacent the termination trench. The polysilicon material in each termination trenches.

6. 发明申请

US20060019448A1 Termination for trench MIS device having implanted drain-drift region 有权
标题翻译：具有植入漏极漂移区域的沟槽MIS器件的端接
公开(公告)号：US20060019448A1
公开(公告)日：2006-01-26
申请号：US11232613
申请日：2005-09-21
申请人： Mohamed Darwish , Kyle Terrill , Jainhai Qi , Qufei Chen
发明人： Mohamed Darwish , Kyle Terrill , Jainhai Qi , Qufei Chen
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/7811
摘要： A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The device can be terminated by a plurality of polysilicon-filled termination trenches located near the edge of the die, with the polysilicon in each termination trench being connected to the mesa adjacent the termination trench. The polysilicon material in each termination trenches.
摘要翻译：沟槽MIS器件形成在覆盖在N外延层和N +衬底上的P外延层中。在一个实施例中，器件包括从沟槽的底部延伸到N外延层的N型漏 - 漂移区。优选地，漏极漂移区域至少部分地通过在沟槽的侧壁上制造间隔物并且在侧壁间隔物之间并通过沟槽的底部注入N型掺杂剂而形成。漏极漂移区可以比在N外延层中形成的常规“漂移区”更重的掺杂。因此，器件具有低导通电阻。该器件可以由位于管芯边缘附近的多个多晶硅填充的端接沟槽端接，每个端接沟槽中的多晶硅与邻近端接沟槽的台面连接。每个终端沟槽中的多晶硅材料。

7. 发明申请

US20050215011A1 Termination for trench MIS device having implanted drain-drift region 有权
标题翻译：具有植入漏极漂移区域的沟槽MIS器件的端接
公开(公告)号：US20050215011A1
公开(公告)日：2005-09-29
申请号：US10810031
申请日：2004-03-26
申请人： Mohamed Darwish , Kyle Terrill , Jainhai Qi , Qufei Chen
发明人： Mohamed Darwish , Kyle Terrill , Jainhai Qi , Qufei Chen
IPC分类号： G03G15/08 , G03G21/16 , H01L21/336 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/7811
摘要： A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The drain-drift region can be doped more heavily than the conventional“drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The device can be terminated by a plurality of polysilicon-filled termination trenches located near the edge of the die, with the polysilicon in each termination trench being connected to the mesa adjacent the termination trench. The polysilicon material in each termination trenches.
摘要翻译：沟槽MIS器件形成在覆盖在N外延层和N +衬底上的P外延层中。在一个实施例中，器件包括从沟槽的底部延伸到N外延层的N型漏 - 漂移区。优选地，漏极漂移区域至少部分地通过在沟槽的侧壁上制造间隔物并且在侧壁间隔物之间并通过沟槽的底部注入N型掺杂剂而形成。漏极漂移区可以比在N外延层中形成的常规“漂移区”更重的掺杂。因此，器件具有低导通电阻。该器件可以由位于管芯边缘附近的多个多晶硅填充的端接沟槽端接，每个端接沟槽中的多晶硅与邻近端接沟槽的台面连接。每个终端沟槽中的多晶硅材料。

8. 发明申请

US20060011976A1 Termination for trench MIS device having implanted drain-drift region 有权
公开(公告)号：US20060011976A1
公开(公告)日：2006-01-19
申请号：US11233145
申请日：2005-09-21
申请人： Mohamed Darwish , Kyle Terrill , Jainhai Qi , Qufei Chen
发明人： Mohamed Darwish , Kyle Terrill , Jainhai Qi , Qufei Chen
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/42368 , H01L29/7811
摘要： A trench MIS device is formed in a P-epitaxial layer that overlies an N-epitaxial layer and an N+ substrate. In one embodiment, the device includes an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. Preferably, the drain-drift region is formed at least in part by fabricating spacers on the sidewalls of the trench and implanting an N-type dopant between the sidewall spacers and through the bottom of the trench. The drain-drift region can be doped more heavily than the conventional “drift region” that is formed in an N-epitaxial layer. Thus, the device has a low on-resistance. The device can be terminated by a plurality of polysilicon-filled termination trenches located near the edge of the die, with the polysilicon in each termination trench being connected to the mesa adjacent the termination trench. The polysilicon material in each termination trenches.

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