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    • 4. 发明授权
    • X-ray image detector system
    • X射线图像检测系统
    • US06403965B1
    • 2002-06-11
    • US09533934
    • 2000-03-23
    • Mitsushi IkedaMasaki AtsutaAkira KinnoKouhei Suzuki
    • Mitsushi IkedaMasaki AtsutaAkira KinnoKouhei Suzuki
    • G01T124
    • H01L27/14663H01L27/14659
    • An X-ray image detector system includes: a plurality of scanning lines; a plurality of signal lines formed so as to intersect the scanning lines; and a plurality of pixel parts, each of which is formed at a corresponding one of the intersections between the scanning lines and the signal lines so as to form an array; each of said pixel parts having an X-ray-to-charge converting part for converting an incident X-ray to an electric charge, a pixel electrode for receiving the electric charge from the X-ray-to-charge converting part, and a switching element which is operated on the basis of a signal of a corresponding one of the scanning lines, one end of the switching element being connected to the pixel electrode, and the other end of the switching element being connected to a corresponding one of the signal lines, wherein the X-ray-to-charge converting part includes at least a first X-ray-to-charge converting film, and a second X-ray-to-charge converting film having a lower resistivity than that of the first X-ray-to-charge converting film. Thus, it is possible to provide an X-ray image detector system capable of detecting an image even if X-ray irradiation is weak.
    • X射线图像检测器系统包括:多条扫描线; 形成为与扫描线相交的多条信号线; 以及多个像素部分,每个像素部分形成在扫描线和信号线之间的相应的一个相交处以形成阵列; 每个所述像素部分具有用于将入射的X射线转换成电荷的X射线电荷转换部分,用于从X射线到电荷转换部分接收电荷的像素电极,以及 开关元件,其基于相应的扫描线的信号而操作,所述开关元件的一端连接到所述像素电极,并且所述开关元件的另一端连接到所述信号中的相应的一个 线,其中所述X射线电荷转换部分至少包括第一X射线电荷转换膜,以及具有比所述第一X射线电荷转换膜低的电阻率的第二X射线电荷转换膜 射 - 电转换膜。 因此,即使X射线照射弱,也可以提供能够检测图像的X射线图像检测器系统。
    • 5. 发明授权
    • Image detecting device and an X-ray imaging system
    • 图像检测装置和X射线成像系统
    • US06185274B2
    • 2001-02-06
    • US09265693
    • 1999-03-10
    • Akira KinnoMasaki AtsutaTakuya SakaguchiManabu TanakaMitsushi IkedaKouhei Suzuki
    • Akira KinnoMasaki AtsutaTakuya SakaguchiManabu TanakaMitsushi IkedaKouhei Suzuki
    • H05G164
    • G01T1/2928
    • An image detecting device has a large dynamic range that deals with a plurality of image detecting modes. The image detecting device is composed of pixels e (i, j) arranged in a matrix array. Each pixel has a photoelectric element. In each pixel, a capacitor 102 and a protecting diode 103 are disposed. The capacitor 102 stores electric charge corresponding to the intensity of penetrated light to the relevant pixel. The protecting diode limits the capacitance. A bias voltage is supplied to the protecting diode 103 through a bias line Bias. The bias voltage is adjusted by a bias voltage controlling system 133 corresponding to the frame rate. Thus, the influence of a leak current in the off-state of the protecting diode 103 can be alleviated against electric charge stored in the capacitor 102. Consequently, an image with a high S/N ratio can be obtained regardless of the frame rate.
    • 图像检测装置具有处理多个图像检测模式的大动态范围。 图像检测装置由以矩阵阵列排列的像素e(i,j)组成。 每个像素都有一个光电元件。 在每个像素中,设置电容器102和保护二极管103。 电容器102将对应于穿透光强度的电荷存储到相关像素。 保护二极管限制电容。 偏置电压通过偏压线Bias提供给保护二极管103。 偏置电压由对应于帧速率的偏压控制系统133调节。 因此,可以减轻保护二极管103的截止状态下的漏电流对存储在电容器102中的电荷的影响。因此,无论帧速率如何,都可以获得具有高S / N比的图像。
    • 8. 发明授权
    • X-ray semiconductor detector
    • X射线半导体探测器
    • US06323490B1
    • 2001-11-27
    • US09271981
    • 1999-03-19
    • Mitsushi IkedaManabu TanakaMasaki AtsutaAkira KinnoKohei SuzukiNorihiko Kamiura
    • Mitsushi IkedaManabu TanakaMasaki AtsutaAkira KinnoKohei SuzukiNorihiko Kamiura
    • H05G164
    • H01L27/14692H01L27/14659H01L27/14676H04N5/32H04N5/3658
    • An X-ray semiconductor detector has a pixel array structure in which a plurality of pixel elements are arrayed in a matrix. Each pixel element includes an X-ray/charge conversion film for generating charges in accordance with an incident X-ray, a storage capacitor for storing the signal charges generated in the X-ray/charge conversion film, a signal read transistor for reading the signal charges from the storage capacitor, and a protective diode arranged to remove excessive charges from the storage capacitor and prevent dielectric breakdown of the signal read transistor. The protective diode is arranged below the storage capacitor. Since the protective diode is arranged below the storage capacitor, it does not decrease the pixel density. Since the protective diode is covered with the storage capacitor, it can be shielded from an X-ray. Therefore, variations in OFF current of the protective diode by an X-ray and dielectric breakdown of the protective diode can be prevented.
    • X射线半导体检测器具有其中多个像素元件以矩阵排列的像素阵列结构。 每个像素元件包括用于根据入射的X射线产生电荷的X射线/电荷转换膜,用于存储在X射线/电荷转换膜中产生的信号电荷的存储电容器,用于读取X射线/ 来自存储电容器的信号电荷,以及保护二极管,被配置为从存储电容器去除过多的电荷并防止信号读取晶体管的电介质击穿。 保护二极管布置在存储电容器的下方。 由于保护二极管布置在存储电容器的下方,因此不会降低像素密度。 由于保护二极管被存储电容器覆盖,所以可以屏蔽X射线。 因此,可以防止保护二极管通过X射线的截止电流的变化和保护二极管的介电击穿。