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    • 2. 发明授权
    • Image detecting device and an X-ray imaging system
    • 图像检测装置和X射线成像系统
    • US06185274B2
    • 2001-02-06
    • US09265693
    • 1999-03-10
    • Akira KinnoMasaki AtsutaTakuya SakaguchiManabu TanakaMitsushi IkedaKouhei Suzuki
    • Akira KinnoMasaki AtsutaTakuya SakaguchiManabu TanakaMitsushi IkedaKouhei Suzuki
    • H05G164
    • G01T1/2928
    • An image detecting device has a large dynamic range that deals with a plurality of image detecting modes. The image detecting device is composed of pixels e (i, j) arranged in a matrix array. Each pixel has a photoelectric element. In each pixel, a capacitor 102 and a protecting diode 103 are disposed. The capacitor 102 stores electric charge corresponding to the intensity of penetrated light to the relevant pixel. The protecting diode limits the capacitance. A bias voltage is supplied to the protecting diode 103 through a bias line Bias. The bias voltage is adjusted by a bias voltage controlling system 133 corresponding to the frame rate. Thus, the influence of a leak current in the off-state of the protecting diode 103 can be alleviated against electric charge stored in the capacitor 102. Consequently, an image with a high S/N ratio can be obtained regardless of the frame rate.
    • 图像检测装置具有处理多个图像检测模式的大动态范围。 图像检测装置由以矩阵阵列排列的像素e(i,j)组成。 每个像素都有一个光电元件。 在每个像素中,设置电容器102和保护二极管103。 电容器102将对应于穿透光强度的电荷存储到相关像素。 保护二极管限制电容。 偏置电压通过偏压线Bias提供给保护二极管103。 偏置电压由对应于帧速率的偏压控制系统133调节。 因此,可以减轻保护二极管103的截止状态下的漏电流对存储在电容器102中的电荷的影响。因此,无论帧速率如何,都可以获得具有高S / N比的图像。
    • 4. 发明授权
    • X-ray semiconductor detector
    • X射线半导体探测器
    • US06323490B1
    • 2001-11-27
    • US09271981
    • 1999-03-19
    • Mitsushi IkedaManabu TanakaMasaki AtsutaAkira KinnoKohei SuzukiNorihiko Kamiura
    • Mitsushi IkedaManabu TanakaMasaki AtsutaAkira KinnoKohei SuzukiNorihiko Kamiura
    • H05G164
    • H01L27/14692H01L27/14659H01L27/14676H04N5/32H04N5/3658
    • An X-ray semiconductor detector has a pixel array structure in which a plurality of pixel elements are arrayed in a matrix. Each pixel element includes an X-ray/charge conversion film for generating charges in accordance with an incident X-ray, a storage capacitor for storing the signal charges generated in the X-ray/charge conversion film, a signal read transistor for reading the signal charges from the storage capacitor, and a protective diode arranged to remove excessive charges from the storage capacitor and prevent dielectric breakdown of the signal read transistor. The protective diode is arranged below the storage capacitor. Since the protective diode is arranged below the storage capacitor, it does not decrease the pixel density. Since the protective diode is covered with the storage capacitor, it can be shielded from an X-ray. Therefore, variations in OFF current of the protective diode by an X-ray and dielectric breakdown of the protective diode can be prevented.
    • X射线半导体检测器具有其中多个像素元件以矩阵排列的像素阵列结构。 每个像素元件包括用于根据入射的X射线产生电荷的X射线/电荷转换膜,用于存储在X射线/电荷转换膜中产生的信号电荷的存储电容器,用于读取X射线/ 来自存储电容器的信号电荷,以及保护二极管,被配置为从存储电容器去除过多的电荷并防止信号读取晶体管的电介质击穿。 保护二极管布置在存储电容器的下方。 由于保护二极管布置在存储电容器的下方,因此不会降低像素密度。 由于保护二极管被存储电容器覆盖,所以可以屏蔽X射线。 因此,可以防止保护二极管通过X射线的截止电流的变化和保护二极管的介电击穿。
    • 6. 发明授权
    • Speed control apparatus for vehicle
    • 车速调速装置
    • US08892329B2
    • 2014-11-18
    • US12849494
    • 2010-08-03
    • Yoshiyuki YasuiHideaki KotoManabu TanakaTakayuki Miyajima
    • Yoshiyuki YasuiHideaki KotoManabu TanakaTakayuki Miyajima
    • B60T8/24B60T8/32B60W30/14
    • B60W30/146B60W2550/143
    • A plurality of position data sets representing a plurality of points on a road ahead of a vehicle are acquired, and the degree of curvature of the road at each point is computed. On the basis of the degree of curvature, a constant curvature degree section of a curve is identified, and the degree of curvature and the end position of the constant curvature degree section are determined. In order to cause the vehicle to properly pass through the curve, curve deceleration control is executed on the basis of the actual vehicle speed, a proper vehicle speed determined from the degree of curvature, and the end position of the constant curvature degree section. That is, the curve deceleration control is performed on the basis of the start point of a section of a curve having the maximum degree of curvature and the constant degree of curvature of that section.
    • 获取表示车辆前方道路上的多个点的多个位置数据组,并计算出各点的道路的曲率。 基于曲率,确定曲率的恒定曲率部分,并且确定恒定曲率部分的曲率和终点位置。 为了使车辆正确地通过曲线,基于实际车速,从曲率度确定的适当车速和恒定曲率度部分的终点位置来执行曲线减速控制。 也就是说,曲线减速控制是基于具有该部分的最大曲率半径和恒定曲率的曲线的一部分的起点进行的。
    • 8. 发明授权
    • CIS based thin-film photovoltaic module and process for producing the same
    • CIS基薄膜光伏组件及其制造方法
    • US07960642B2
    • 2011-06-14
    • US12092094
    • 2006-10-31
    • Katsumi KushiyaNorimasa AkemaManabu Tanaka
    • Katsumi KushiyaNorimasa AkemaManabu Tanaka
    • H01L31/0203H01L31/048
    • H01L31/0749H01L31/048H02S40/38Y02E10/541Y02P70/521
    • A photovoltaic module having long-term durability is obtained at low cost.A CIS based thin-film photovoltaic module 1 is obtained by bonding a cover glass 4 comprising, e.g., a semi-tempered white flat glass, which is inexpensive and durable, to a CIS based thin-film photovoltaic circuit 2 on a glass substrate 2A with a thermally crosslinked ethylene vinyl acetate (hereinafter referred to as EVA) resin film 3 (or sheet) as an adhesive. Use of the EVA resin film 3 reduces the amount of an EVA resin to be used. In the crosslinking, a gas generating from the EVA resin film is removed by vacuum suction to prevent bubble generation or inclusion, etc. A high-capacity storage capacitor 9 is disposed on that side of the glass substrate which is opposite to the circuit side to store the electricity optically generated by the circuit.
    • 以低成本获得具有长期耐用性的光伏组件。 通过将廉价且耐用的包括例如半平板白色平板玻璃的玻璃玻璃4结合到玻璃基板2A上的CIS基薄膜光伏电路2,获得CIS基薄膜光伏组件1 使用热交联的乙烯乙酸乙烯酯(以下称为EVA)树脂膜3(或片)作为粘合剂。 EVA树脂膜3的使用减少了所使用的EVA树脂的量。 在交联中,通过真空抽吸除去从EVA树脂膜产生的气体,以防止发生气泡或夹杂物等。在玻璃基板的与电路侧相对的一侧设置大容量存储电容器9, 存储由电路光学产生的电。