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1. 发明授权

US07652179B2 Gas for plasma reaction, process for producing the same, and use thereof 有权
标题翻译：用于等离子体反应的气体，其制造方法及其用途
公开(公告)号：US07652179B2
公开(公告)日：2010-01-26
申请号：US12007522
申请日：2008-01-11
申请人： Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
发明人： Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
IPC分类号： C07C21/22
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
摘要翻译：一种用于等离子体反应的气体，包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。

2. 发明授权

US07341764B2 Gas for plasma reaction, process for producing the same, and use 有权
标题翻译：用于等离子体反应的气体，其制造方法和使用
公开(公告)号：US07341764B2
公开(公告)日：2008-03-11
申请号：US10493225
申请日：2002-10-31
申请人： Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
发明人： Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
IPC分类号： C08J5/18 , C08J7/18
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
摘要翻译：一种用于等离子体反应的气体，包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。

3. 发明申请

US20080139855A1 Gas for plasma reaction, process for producing the same, and use thereof 有权
标题翻译：用于等离子体反应的气体，其制造方法及其用途
公开(公告)号：US20080139855A1
公开(公告)日：2008-06-12
申请号：US12007522
申请日：2008-01-11
申请人： Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
发明人： Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
IPC分类号： C07C21/22
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
摘要翻译：一种用于等离子体反应的气体，包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。

4. 发明申请

US20050092240A1 Gas for plasma reaction, process for producing the same, and use 有权
标题翻译：用于等离子体反应的气体，其制造方法和使用
公开(公告)号：US20050092240A1
公开(公告)日：2005-05-05
申请号：US10493225
申请日：2002-10-31
申请人： Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
发明人： Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
IPC分类号： H01L25/00 , C07C17/25 , C07C21/22 , C23C16/00 , H01L21/3065 , H01L21/311
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
摘要翻译：一种用于等离子体反应的气体，包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。

5. 发明申请

US20060264059A1 Semiconductor device, method for manufacturing semiconductor device and gas for plasma cvd 有权
标题翻译：半导体器件，用于制造半导体器件的方法和用于等离子体cvd的气体
公开(公告)号：US20060264059A1
公开(公告)日：2006-11-23
申请号：US10568461
申请日：2004-08-12
申请人： Yasuo Kobayashi , Kohei Kawamura , Tadahiro Ohmi , Akinobu Teramoto , Tatsuya Sugimoto , Toshiro Yamada , Kimiaki Tanaka
发明人： Yasuo Kobayashi , Kohei Kawamura , Tadahiro Ohmi , Akinobu Teramoto , Tatsuya Sugimoto , Toshiro Yamada , Kimiaki Tanaka
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/3146
摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.
摘要翻译：本发明涉及一种半导体器件，其包括由经历420℃或更低的热历史的氟化碳膜构成的绝缘膜。本发明的特征在于，在氟化碳膜经受热历史之前，包含在氟化碳膜中的氢原子数量为3原子％以下。

6. 发明授权

US07704893B2 Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD 有权
标题翻译：半导体装置，半导体装置的制造方法以及等离子体CVD用气体
公开(公告)号：US07704893B2
公开(公告)日：2010-04-27
申请号：US10568461
申请日：2004-08-12
申请人： Yasuo Kobayashi , Kohei Kawamura , Tadahiro Ohmi , Akinobu Teramoto , Tatsuya Sugimoto , Toshiro Yamada , Kimiaki Tanaka
发明人： Yasuo Kobayashi , Kohei Kawamura , Tadahiro Ohmi , Akinobu Teramoto , Tatsuya Sugimoto , Toshiro Yamada , Kimiaki Tanaka
IPC分类号： H01L21/31
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/3146
摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.
摘要翻译：本发明涉及一种半导体器件，其包括由经历420℃或更低的热历史的氟化碳膜构成的绝缘膜。本发明的特征在于，在氟化碳膜经受热历史之前，包含在氟化碳膜中的氢原子数量为3原子％以下。

7. 发明申请

US20110124928A1 Gas production facility, gas supply container, and gas for manufacture of electronic devices 审中-公开
标题翻译：天然气生产设备，气体供应容器和用于制造电子设备的气体
公开(公告)号：US20110124928A1
公开(公告)日：2011-05-26
申请号：US12929271
申请日：2011-01-12
申请人： Tadahiro Ohmi , Yasuyuki Shirai , Takeyoshi Kato , Kimiaki Tanaka , Masahiro Nakamura , Katsutomo Tanaka
发明人： Tadahiro Ohmi , Yasuyuki Shirai , Takeyoshi Kato , Kimiaki Tanaka , Masahiro Nakamura , Katsutomo Tanaka
IPC分类号： C07C17/00 , C07C21/185 , C07C21/18 , C07C21/20 , C07C21/19 , B01J7/00
CPC分类号： C23C30/00 , C23C4/11 , C23C8/02
摘要： An apparatus for producing a gas using a raw material gas having high reactivity, in particular, a fluorinated hydrocarbon, or a vessel for supplying the gas, characterized in that the surface of a portion thereof contacting with the gas has an average roughness of 1 μm or less in terms of a center line average roughness Ra. It is preferred that an oxide-based passivated film such as a film based on chromium oxide, aluminum oxide, yttrium oxide, magnesium oxide or the like is formed on the surface having a roughness controlled as above. The above apparatus and vessel can be suitably used for preventing the contamination of a raw material gas originated from a gas production apparatus or a vessel for supplying the gas.
摘要翻译：使用反应性高的原料气体，特别是氟化烃或用于供给气体的容器来制造气体的装置，其特征在于，与气体接触的部分的表面的平均粗糙度为1μm 或更小的中心线平均粗糙度Ra。优选在具有如上控制的粗糙度的表面上形成氧化物基钝化膜，例如基于氧化铬，氧化铝，氧化钇，氧化镁等的膜。上述设备和容器可适用于防止源自气体生产设备或用于供应气体的容器的原料气体的污染。

8. 发明申请

US20070248769A1 Cover film for organic electroluminescence devices, organic electroluminescence device using the cover film and process for producing the device 审中-公开
标题翻译：用于有机电致发光器件的覆盖膜，使用该覆盖膜的有机电致发光元件及其制造方法
公开(公告)号：US20070248769A1
公开(公告)日：2007-10-25
申请号：US11808394
申请日：2007-06-08
申请人： Motofumi Kashiwagi , Kimiaki Tanaka
发明人： Motofumi Kashiwagi , Kimiaki Tanaka
IPC分类号： C23C16/00
CPC分类号： H01L51/5253 , H01L27/3295 , H01L2251/5315 , Y10T428/31544
摘要： A cover film for organic electroluminescence (EL) devices which comprises polymers of decomposition products of a perfluoroolefin and has an average light transmittance of 70% or larger in a wavelength band of 400 to 800 nm; an organic EL device which comprises at least an electrode layer (an anode), a layer of a light emitting substance, a transparent electrode layer (a cathode) and the above cover film for an organic EL device which are laminated successively on a substrate; and a process for producing an EL device which comprises forming the cover film in accordance with the plasma CVD process using a material gas containing the perfluoroolefin as the main component.
摘要翻译：一种用于有机电致发光（EL）器件的覆盖膜，其包含全氟烯烃的分解产物的聚合物，并且在400至800nm的波长带中具有70％或更大的平均透光率; 一种有机EL器件，其至少包括电极层（阳极），发光物质层，透明电极层（阴极）和上述有机EL器件覆盖膜，它们依次层压在衬底上; 以及一种EL器件的制造方法，其包括使用以全氟烯烃为主要成分的原料气体，按照等离子体CVD法形成覆盖膜。

9. 发明授权

US5356738A Reticle comprising phase shifter with a tapered edge 失效
标题翻译：标线片包括具有锥形边缘的移相器
公开(公告)号：US5356738A
公开(公告)日：1994-10-18
申请号：US813030
申请日：1991-12-24
申请人： Hiroyuki Inoue , Kenji Anzai , Kimiaki Tanaka
发明人： Hiroyuki Inoue , Kenji Anzai , Kimiaki Tanaka
IPC分类号： G03F1/28 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/28
摘要： The edge of a 180.degree. phase shifter on a glass substrate of a reticle has a tapered structure, and a reduction of the intensity of transmitted light by an interference in the boundary area between the phase shifter and the glass substrate is moderated.
摘要翻译：标线玻璃基板上的180°移相器的边缘具有锥形结构，并且通过干涉在移相器和玻璃基板之间的边界区域中的透射光强度的降低得到缓和。

10. 发明授权

US07415339B2 Vehicle accessory adjusting system and method of adjusting vehicle accessory 有权
标题翻译：车辆配件调整系统及车辆附件调整方法
公开(公告)号：US07415339B2
公开(公告)日：2008-08-19
申请号：US11484738
申请日：2006-07-12
申请人： Hirotane Ikeda , Kimiaki Tanaka
发明人： Hirotane Ikeda , Kimiaki Tanaka
IPC分类号： B60R22/00
CPC分类号： B60R16/037 , B60R25/2081
摘要： A vehicle accessory adjusting system that adjusts a variety of on-vehicle accessories of a vehicle to suit a driver or a passenger according to personal data stored in an IC card or other portable data storage medium. The vehicle accessory adjusting system includes a memory that stores standard setting data on the on-vehicle accessories, calculation circuit for calculating personal data based on specific setting data obtained when a driver or a passenger uses some on-vehicle accessories and corresponding standard setting data of the on-vehicle accessories, a rewriting unit to rewrite the personal data stored in the IC card with new personal data; and setting circuit to set the on-vehicle accessories according to the personal data stored in the IC card and the standard setting data stored in the memory.
摘要翻译：一种车辆附件调整系统，其根据存储在IC卡或其他便携式数据存储介质中的个人数据调整车辆的各种车载附件以适合驾驶员或乘客。车辆附件调整系统包括：存储器，用于存储车载附件上的标准设置数据;计算电路，用于根据当驾驶员或乘客使用某些车载附件时获得的特定设置数据来计算个人数据;以及相应的标准设置数据车载附件，重写单元，用新的个人数据重写存储在IC卡中的个人数据; 以及设置电路，根据存储在IC卡中的个人数据和存储在存储器中的标准设置数据来设置车载附件。

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