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1. 发明授权

US07951981B2 Process for producing perfluoroalkyne compound 有权
标题翻译：生产全氟炔化合物的方法
公开(公告)号：US07951981B2
公开(公告)日：2011-05-31
申请号：US12225529
申请日：2007-03-30
申请人： Tatsuya Sugimoto
发明人： Tatsuya Sugimoto
IPC分类号： C07C17/00 , C07C17/02
CPC分类号： C07C17/02 , C07C17/10 , C07C17/23 , C07C21/22 , C07C19/01 , C07C19/10
摘要： A process for producing a perfluoroalkyne compound includes an addition reaction step of adding Cl2, Br2, or I2 to a compound shown by the formula (1) CH3C≡CR1 to obtain a compound shown by the formula (2) CH3CX2CX2R1, a fluorination reaction step of reacting the compound shown by the formula (2) with fluorine gas to obtain a compound shown by the formula (3) CF3CX2CX2R2, and a dehalogenation reaction step of contacting the compound shown by the formula (3) with a metal or an organometallic compound to obtain a perfluoroalkyne compound shown by the formula (4) CF3C≡CR2. According to the present invention, a perfluoroalkyne compound can be produced at high productivity and high yield using starting raw materials which are environmentally friendly and industrially available. In the above formulas, R1 represents a methyl group or an ethyl group, X represents Cl, Br, or I, and R2 represents a trifluoromethyl group or a pentafluoroethyl group.
摘要翻译：一种全氟炔化合物的制造方法，包括向式（1）所示的化合物（CH 3C≡CR1）表示的化合物中加入Cl 2，Br 2或I 2的加成反应工序，得到式（2）所示的化合物，CH 3 C X 2 C X 2 R 1，氟化反应步骤使式（2）所示的化合物与氟气反应，得到式（3）CF 3 C X 2 C X 2 R 2所示的化合物和使式（3）所示的化合物与金属或有机金属化合物接触的脱卤反应步骤得到式（4）CF 3C≡CR2所示的全氟炔化合物。根据本发明，可以以环保和工业上可获得的起始原料，以高生产率和高产率生产全氟炔化合物。在上式中，R 1表示甲基或乙基，X表示Cl，Br或I，R 2表示三氟甲基或五氟乙基。

2. 发明申请

US20110060170A1 METHOD FOR PRODUCING HYDROGEN-CONTAINING FLUOROOLEFIN COMPOUND 有权
标题翻译：生产含氢氟烷化合物的方法
公开(公告)号：US20110060170A1
公开(公告)日：2011-03-10
申请号：US12990858
申请日：2009-07-13
申请人： Tatsuya Sugimoto , Takefumi Suzuki , Jo Konagawa
发明人： Tatsuya Sugimoto , Takefumi Suzuki , Jo Konagawa
IPC分类号： C07C17/23
CPC分类号： C07C17/23 , C07C23/06 , C07C23/08
摘要： An unsaturated hydrogen-containing fluoroolefin compound is obtained by bringing an unsaturated fluorine-containing halogen compound into contact with 0.1 to 3 molar equivalents of hydrogen relative to the unsaturated fluorine-containing halogen compound in a vapor phase in the presence of a supported palladium catalyst in which an amount of supported palladium is 0.1% by weight to 2.5% by weight.
摘要翻译：通过使不饱和含氟卤素化合物在负载的钯催化剂存在下，在气相中相对于不饱和含氟卤素化合物与0.1〜3摩尔当量的氢接触，得到不饱和含氢氟烯烃化合物其中负载钯的量为0.1重量％至2.5重量％。

3. 发明授权

US07704893B2 Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD 有权
标题翻译：半导体装置，半导体装置的制造方法以及等离子体CVD用气体
公开(公告)号：US07704893B2
公开(公告)日：2010-04-27
申请号：US10568461
申请日：2004-08-12
申请人： Yasuo Kobayashi , Kohei Kawamura , Tadahiro Ohmi , Akinobu Teramoto , Tatsuya Sugimoto , Toshiro Yamada , Kimiaki Tanaka
发明人： Yasuo Kobayashi , Kohei Kawamura , Tadahiro Ohmi , Akinobu Teramoto , Tatsuya Sugimoto , Toshiro Yamada , Kimiaki Tanaka
IPC分类号： H01L21/31
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/3146
摘要： The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.
摘要翻译：本发明涉及一种半导体器件，其包括由经历420℃或更低的热历史的氟化碳膜构成的绝缘膜。本发明的特征在于，在氟化碳膜经受热历史之前，包含在氟化碳膜中的氢原子数量为3原子％以下。

4. 发明授权

US07655572B2 Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, control program and computer storage medium 失效
标题翻译：半导体器件制造方法，半导体器件制造装置，控制程序和计算机存储介质
公开(公告)号：US07655572B2
公开(公告)日：2010-02-02
申请号：US11551495
申请日：2006-10-20
申请人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
发明人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.
摘要翻译：将光致抗蚀剂膜用作掩模，对光致抗蚀剂膜选择性地进行SiO 2膜的等离子体蚀刻，形成孔。包含用C x F y O表示的含有不饱和碳氟化合物气体的蚀刻气体（y / x为整数×，为4或5，y为1-1.5）用于等离子体蚀刻。例如，C4F4O气体和C4F6O气体用于含氧的不饱和碳氟化合物气体。

5. 发明授权

US07449415B2 Gas for plasma reaction and process for producing thereof 有权
标题翻译：用于等离子体反应的气体及其制造方法
公开(公告)号：US07449415B2
公开(公告)日：2008-11-11
申请号：US11078349
申请日：2005-03-14
申请人： Toshinobu Hirayama , Toshiro Yamada , Tatsuya Sugimoto , Mitsuru Sugawara
发明人： Toshinobu Hirayama , Toshiro Yamada , Tatsuya Sugimoto , Mitsuru Sugawara
IPC分类号： B01D15/00
CPC分类号： H01L21/32137 , C07C17/208 , C07C17/38 , C07C17/383 , C07C17/389 , C07C23/08 , H01L21/0212 , H01L21/02274 , H01L21/31116 , H01L21/31138 , H01L21/3127
摘要： A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.
摘要翻译：用于等离子体反应的高纯度气体，其基于用于等离子体反应的气体的总体积具有至少99.9体积％的八氟环戊烯纯度，其中氮气和氧气的总含量作为余量的微量气体成分，不大于200ppm（体积）。这种用于等离子体反应的高纯度气体可以通过以下方法制备：（1）在0组的惰性气体中蒸馏粗制八氟环戊烯的方法，或（2）将粗制八氟环戊烷蒸馏至99.9体积％以上的纯度的方法，然后除去杂质余量。

6. 发明授权

US07341764B2 Gas for plasma reaction, process for producing the same, and use 有权
标题翻译：用于等离子体反应的气体，其制造方法和使用
公开(公告)号：US07341764B2
公开(公告)日：2008-03-11
申请号：US10493225
申请日：2002-10-31
申请人： Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
发明人： Mitsuru Sugawara , Toshiro Yamada , Tatsuya Sugimoto , Kimiaki Tanaka
IPC分类号： C08J5/18 , C08J7/18
CPC分类号： C07C21/22 , C07C17/25 , C23C16/26 , C23C16/30 , C23F4/00 , H01L21/3065 , H01L21/31116
摘要： A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.
摘要翻译：一种用于等离子体反应的气体，包括具有5或6个碳原子的链状全氟炔烃，优选全氟-2-戊炔。这种等离子体反应气体适用于形成精细图案的干蚀刻，用于形成薄膜的等离子体CVD和等离子体灰化。通过使二氢氟烷烃化合物或单氢氟烯烃化合物与碱性化合物接触来合成等离子体反应气体。

7. 发明申请

US20070090093A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM 失效
标题翻译：半导体器件制造方法，半导体器件制造设备，控制程序和计算机存储介质
公开(公告)号：US20070090093A1
公开(公告)日：2007-04-26
申请号：US11551495
申请日：2006-10-20
申请人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
发明人： Akinori Kitamura , Masanobu Honda , Nozomi Hirai , Masahiro Nakamura , Tatsuya Sugimoto
IPC分类号： C23F1/00 , H01L21/461 , H01L21/306 , B44C1/22
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： Photoresist film is used as a mask, plasma etching of a SiO2 film is selectively performed to a photoresist film, and a hole is formed. An etching gas comprising unsaturated fluorocarbon gas containing oxygen expressed with CxFyO (y/x is 1-1.5 at an integer in x, as for 4 or 5, and y) is used for the plasma etching. C4F4O gas and C4F6O gas are used for the unsaturated fluorocarbon gas containing oxygen, for example.
摘要翻译：将光致抗蚀剂膜用作掩模，对光致抗蚀剂膜选择性地进行SiO 2膜的等离子体蚀刻，形成孔。包含用C x F y O表示的含有不饱和碳氟化合物气体的蚀刻气体（y / x为整数×，为4或5，y为1-1.5）用于等离子体蚀刻。用于含氧的不饱和碳氟化合物气体的C 4 N 4 O 4 O 4和C 4 F 6 O O气体，例如。

8. 发明授权

US06403846B1 Fluorinated, saturated hydrocarbons 失效
标题翻译：氟化饱和烃
公开(公告)号：US06403846B1
公开(公告)日：2002-06-11
申请号：US09423747
申请日：2000-02-03
申请人： Akira Sekiya , Toshirou Yamada , Takashi Uruma , Tatsuya Sugimoto
发明人： Akira Sekiya , Toshirou Yamada , Takashi Uruma , Tatsuya Sugimoto
IPC分类号： C07C1908
CPC分类号： C11D7/261 , C07C17/00 , C07C17/354 , C07C17/389 , C07C19/08 , C07C23/08 , C10M105/52 , C10M2211/022 , C10M2211/06 , C11D7/28 , C11D7/30 , C11D7/5018 , C07C23/06
摘要： A composition containing less than 95 mol % of a trihydrofluorinated saturated hydrocarbon represented by the following formula (I) Rf1—R1—Rf2 (I) (wherein R1 represents a carbon chain in which CHF and CH2 are bound, and Rf1 and Rf2 are bound to each other to form a ring by a perfluoroalkylene chain of 2 to 4 carbon atoms) and the balance of a tetrahydrofluorinated saturated hydrocarbon having the same carbon number and the same carbon structure as the trihydrofluorinated saturated hydrocarbon, as represented by the following formula (II) Rf1—R2—Rf2 (II) (wherein R2 represents a carbon chain in which CH2 and CH3 are bound, and Rf1 and Rf2 are as defined above) is provided as a composition containing, in a high proportion, trihydrofluorocarbon, a hydrofluorocarbon (HFC) known to have a small global heating coefficient, which has less influence on the global environment, shows less toxicity to animals, and is chemically stable.
摘要翻译：由下式（I）表示的含有少于95摩尔％的三氢氟化饱和烃的组合物（其中，R1表示其中CHF和CH2键合的碳链，Rf1和Rf2彼此结合形成环，由具有2至4个碳原子的全氟亚烷基链）和与下式（II）表示的具有与三氢氟化饱和烃相同碳数和相同碳结构的四氢氟化饱和烃的余量（其中R2表示碳链其中CH 2和CH 3结合，Rf1和Rf2如上所定义）作为组成，其以高比例含有三氢氟碳化合物，已知具有小的全球加热系数的氢氟烃（HFC）的影响较小全球环境对动物的毒性较小，化学稳定。

9. 发明申请

US20080274334A1 Dry Etching Gas and Method of Dry Etching 审中-公开
标题翻译：干蚀刻气体和干蚀刻方法
公开(公告)号：US20080274334A1
公开(公告)日：2008-11-06
申请号：US11628014
申请日：2005-05-30
申请人： Akira Sekiya , Tatsuya Sugimoto , Toshiro Yamada , Takanobu Mase
发明人： Akira Sekiya , Tatsuya Sugimoto , Toshiro Yamada , Takanobu Mase
IPC分类号： C09K13/00 , H01L21/306 , B32B3/00
CPC分类号： H01L21/31116 , C07C41/18 , C07C43/17 , C07C45/513 , C07C45/673 , C07C45/82 , C07C49/227 , C07C2601/04 , C07F9/5352 , Y10T428/24479 , C07C49/687
摘要： A dry etching gas comprising a C4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O2, O3, CO, CO2, CHF3, CH2F2, CF4, C2F6, and C3F8; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma. The dry etching gases can be safely used, are reduced in influence on the global environment, and can highly selectively dry-etch a semiconductor material at a high dry etching rate to form a satisfactory pattern shape. The dry etching method employs either of these dry etching gases.
摘要翻译：一种干蚀刻气体，其包含在分子中具有醚键或羰基和一个或多个氟原子的C 4-6二氟化合物，其仅由碳，氟和氧原子构成，并且在氟原子数与碳原子数的比例（F / C）为1.9以下（前提是该化合物既不是具有一个环醚键的氟化合物，也不是一个碳 - 碳双键，也不是饱和氟具有一个羰基的化合物）; 包括干蚀刻气体和至少一种选自稀有气体O 2，O 3，CO，CO 2的气体的混合干蚀刻气体， CH 2，CH 2，CH 2，CH 2，CF 4，C 2， F 6，和C 3 F 8; 以及干蚀刻方法，其包括将这些干蚀刻气体中的任一种转化为等离子体并用等离子体处理半导体材料。可以安全地使用干蚀刻气体，减小对全局环境的影响，并且可以以高干蚀刻速率高度选择性地干蚀刻半导体材料以形成令人满意的图案形状。干蚀刻方法采用这些干蚀刻气体中的任一种。

10. 发明授权

US06395700B1 Process for the preparation of compounds having -CH2-CHF-groups 有权
标题翻译：制备具有-CH 2 -CHF-基团的化合物的方法
公开(公告)号：US06395700B1
公开(公告)日：2002-05-28
申请号：US09582325
申请日：2000-06-23
申请人： Toshiro Yamada , Takashi Uruma , Tatsuya Sugimoto
发明人： Toshiro Yamada , Takashi Uruma , Tatsuya Sugimoto
IPC分类号： C11D324
CPC分类号： C07C23/08 , C07C17/00 , C07C17/208 , C07C17/23
摘要： Compounds each having a —CH2—CHF— group and a number of carbon atoms of 4 or above are prepared by hydrogenating a compound having a —CCl═CF— group and a number of carbon atoms of 4 or above in the presence of a noble metal catalyst in a liquid or gas phase. The compound having a —CCl═CF— group and a number of carbon atoms of 4 or above is preferably a C4-C10 alicyclic one, and can be prepared by reacting a compound having a —CCl═CCl— group and a number of carbon atoms of 4 or above with a fluorinating agent.
摘要翻译：通过在贵金属存在下氢化具有-CCl = CF-基团和多个碳原子数4以上的化合物来制备各自具有-CH 2 -CHF-基团和碳原子数为4以上的化合物金属催化剂在液相或气相中。具有-CCl = CF-基团和碳原子数为4以上的化合物优选为C 4 -C 10脂环族化合物，可以通过使具有-CCl = CCl-的化合物和多个碳原子 4或以上的原子与氟化剂。

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