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1. 发明授权

US06826013B2 Thin film magnetic head 失效
标题翻译：薄膜磁头
公开(公告)号：US06826013B2
公开(公告)日：2004-11-30
申请号：US09867822
申请日：2001-05-30
申请人： Mitsuru Otagiri , Yuko Miyake , Sanae Shimizu
发明人： Mitsuru Otagiri , Yuko Miyake , Sanae Shimizu
IPC分类号： G11B521
CPC分类号： G11B5/00 , G11B5/3109 , G11B5/3143 , G11B5/3146 , G11B5/3163
摘要： A thin film magnetic head comprising a substrate, a lower magnetic pole provided on the substrate, a write gap layer located on the lower magnetic pole, and an upper magnetic pole located on the gap layer, the upper magnetic pole including a plating base layer in contact with the gap layer, wherein the plating base layer of the upper magnetic pole is made of a magnetic film having a saturation magnetic flux density of 1.2 T or larger. The thin film magnetic head has an increased recording density, and is adapted to recording at an increased frequency.
摘要翻译：一种薄膜磁头，包括基板，设置在基板上的下磁极，位于下磁极上的写间隙层和位于间隙层上的上磁极，上磁极包括镀基底层与间隙层接触，其中上磁极的电镀基层由饱和磁通密度为1.2T或更大的磁膜制成。薄膜磁头具有增加的记录密度，并且适于以增加的频率进行记录。

2. 发明申请

US20060134468A1 Soft magnetic thin film, manufacturing method therefor, perpendicular magnetic recording medium, and magnetic record reproducing device 审中-公开
标题翻译：软磁薄膜，其制造方法，垂直磁记录介质和磁记录再现装置
公开(公告)号：US20060134468A1
公开(公告)日：2006-06-22
申请号：US11084551
申请日：2005-03-18
申请人： Sanae Shimizu , Daiju Kaneko , Takuya Uzumaki , Atsushi Tanaka
发明人： Sanae Shimizu , Daiju Kaneko , Takuya Uzumaki , Atsushi Tanaka
IPC分类号： G11B5/66
CPC分类号： G11B5/667 , G11B5/858
摘要： A soft magnetic thin film in which the recording magnetic field in the perpendicular direction can be preferentially intensified and sharply controlled when the thin film is applied to a perpendicular magnetic recording medium is provided. This soft magnetic thin film can be obtained by immersing a substrate into an electroless plating bath that contains a Co ion, Fe ion, and Ni ion as metal ions, as well as a complexing agent and a boron-type reducing agent, wherein the content ratios of the metal ions on the mole basis are 0.15≦(Ni ion amount/the amount of total metal ions) ≦0.40, 0.50≦(Co ion amount/the amount of total metal ions) ≦0.80, and 0.05≦(Fe ion amount/the amount of total metal ions) ≦0.15; and carrying out electroless plating in a magnetic field in a range of 5-2,000 Oe given in a direction parallel to the surface of said substrate.
摘要翻译：提供了一种软磁性薄膜，其中当将薄膜施加到垂直磁记录介质时，其中垂直方向上的记录磁场可以被优先增强和显着控制。该软磁性薄膜可以通过将基板浸渍到含有作为金属离子的Co离子，Fe离子和Ni离子的化学镀浴中以及络合剂和硼型还原剂来获得，其中含量金属离子的摩尔比为0.15 <=（Ni离子量/总金属离子的量）<= 0.40，0.50 <=（Co离子量/总金属离子的量）<= 0.80，0.05 <=（Fe离子量/总金属离子的量）<= 0.15; 并且在平行于所述衬底的表面的方向上给出的5-2,000Oe范围内的磁场中进行化学镀。

3. 发明申请

US20050123805A1 Perpendicular magnetic recording medium 审中-公开
标题翻译：垂直磁记录介质
公开(公告)号：US20050123805A1
公开(公告)日：2005-06-09
申请号：US11035254
申请日：2005-01-13
申请人： Sanae Shimizu , Arata Jogo , Takuya Uzumaki , Atsushi Tanaka
发明人： Sanae Shimizu , Arata Jogo , Takuya Uzumaki , Atsushi Tanaka
IPC分类号： G11B5/65 , G11B5/667 , G11B5/73 , G11B5/738
CPC分类号： G11B5/667 , G11B5/7325 , Y10T428/265
摘要： A perpendicular magnetic recording medium including a substrate, a metal base layer formed on the substrate, a soft magnetic layer formed on the metal base layer by electroless plating and having an axis of easy magnetization in the in-plane direction of the substrate, and a magnetic recording layer formed on the soft magnetic layer and having an axis of easy magnetization in a direction perpendicular to the surface of the substrate. The metal base layer is formed of an alloy containing at least one element selected from the group consisting of Co, Ni, and Fe, and has a coercivity of 3 oersteds (Oe) or less. The soft magnetic layer has a thickness of 100 to 600 nm.
摘要翻译：一种垂直磁记录介质，包括基板，形成在基板上的金属基底层，通过无电镀形成在金属基底层上并具有在基板的面内方向具有易磁化轴的软磁性层，以及磁记录层形成在软磁性层上并且在垂直于衬底表面的方向上具有容易磁化的轴。金属基层由含有选自Co，Ni和Fe中的至少一种元素的合金形成，并且具有3奥斯特（Oe）或更低的矫顽力。软磁性层的厚度为100〜600nm。

4. 发明授权

US08277874B2 Manufacturing method of magnetic recording medium, the magnetic recording medium, and magnetic recording and reproducing apparatus 有权
标题翻译：磁记录介质的制造方法，磁记录介质和磁记录和再现装置
公开(公告)号：US08277874B2
公开(公告)日：2012-10-02
申请号：US12256148
申请日：2008-10-22
申请人： Sanae Shimizu , Yuji Ito
发明人： Sanae Shimizu , Yuji Ito
IPC分类号： G11B5/55
CPC分类号： G11B5/855 , G11B5/66
摘要： A manufacturing method of a magnetic recording medium, the magnetic recording medium having a structure where plural magnetic recording areas and isolation areas in a magnetic recording layer are formed on a non-magnetic substrate, the isolation areas being configured to magnetically isolate the magnetic recording areas, the manufacturing method includes a step of forming the magnetic layer on the non-magnetic substrate, the magnetic layer being made of a hard magnetic material having a magnetic coercive force whereby magnetic recording is impossible; and a step of performing ion implantation partially at positions corresponding to the plural magnetic recording areas of the magnetic layer so that the magnetic recording areas are formed by reducing the magnetic coercive force in the positions of the ion implantation to a magnetic-recordable magnetic coercive force, and allowing the isolation areas to maintain the magnetic coercive force whereby magnetic recording is impossible.
摘要翻译：一种磁记录介质的制造方法，所述磁记录介质具有在非磁性基板上形成磁记录层中的多个磁记录区域和隔离区域的结构，所述隔离区域被配置为磁隔离磁记录区域所述制造方法包括在所述非磁性基板上形成所述磁性层的步骤，所述磁性层由具有磁矫顽磁力的硬磁性材料制成，从而磁记录是不可能的; 以及在与磁性层的多个磁记录区域相对应的位置处部分地进行离子注入的步骤，使得通过将离子注入位置的磁矫顽力降低到磁记录磁矫顽力而形成磁记录区域，并且允许隔离区域保持磁矫顽力，从而磁记录是不可能的。

5. 发明申请

US20090244783A1 MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM, THE MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING AND REPRODUCING APPARATUS 有权
标题翻译：磁记录介质的制造方法，磁记录介质和磁记录和再现装置
公开(公告)号：US20090244783A1
公开(公告)日：2009-10-01
申请号：US12256148
申请日：2008-10-22
申请人： Sanae Shimizu , Yuji Ito
发明人： Sanae Shimizu , Yuji Ito
IPC分类号： G11B5/55 , G11B5/62
CPC分类号： G11B5/855 , G11B5/66
摘要： A manufacturing method of a magnetic recording medium, the magnetic recording medium having a structure where plural magnetic recording areas and isolation areas in a magnetic recording layer are formed on a non-magnetic substrate, the isolation areas being configured to magnetically isolate the magnetic recording areas, the manufacturing method includes a step of forming the magnetic layer on the non-magnetic substrate, the magnetic layer being made of a hard magnetic material having a magnetic coercive force whereby magnetic recording is impossible; and a step of performing ion implantation partially at positions corresponding to the plural magnetic recording areas of the magnetic layer so that the magnetic recording areas are formed by reducing the magnetic coercive force in the positions of the ion implantation to a magnetic-recordable magnetic coercive force, and allowing the isolation areas to maintain the magnetic coercive force whereby magnetic recording is impossible.
摘要翻译：一种磁记录介质的制造方法，所述磁记录介质具有在非磁性基板上形成磁记录层中的多个磁记录区域和隔离区域的结构，所述隔离区域被配置为磁隔离磁记录区域所述制造方法包括在所述非磁性基板上形成所述磁性层的步骤，所述磁性层由具有磁矫顽磁力的硬磁性材料制成，从而磁记录是不可能的; 以及在与磁性层的多个磁记录区域相对应的位置处部分地进行离子注入的步骤，使得通过将离子注入位置的磁矫顽力降低到磁记录磁矫顽力而形成磁记录区域，并且允许隔离区域保持磁矫顽力，从而磁记录是不可能的。

6. 外观设计

USD529421S1 Front fairing for a motorcycle 有权
公开(公告)号：USD529421S1
公开(公告)日：2006-10-03
申请号：US29228743
申请日：2005-04-28
申请人： Sanae Shimizu , Hirotsugu Ueno
设计人： Sanae Shimizu , Hirotsugu Ueno

7. 发明授权

US08963164B2 Compound semiconductor device and method of manufacturing the same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US08963164B2
公开(公告)日：2015-02-24
申请号：US13301331
申请日：2011-11-21
申请人： Sanae Shimizu , Kenji Imanishi , Atsushi Yamada , Toyoo Miyajima
发明人： Sanae Shimizu , Kenji Imanishi , Atsushi Yamada , Toyoo Miyajima
IPC分类号： H01L29/16 , H01L29/778 , H01L21/02 , H01L29/66 , H01L29/20
CPC分类号： H01L29/7787 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/66462
摘要： A compound semiconductor device includes: a substrate; an electron transit layer formed over the substrate; an electron supply layer formed over the electron transit layer; and a buffer layer formed between the substrate and the electron transit layer and including AlxGa1-xN(0≦x≦1), wherein the x value represents a plurality of maximums and a plurality of minimums in the direction of the thickness of the buffer layer, and the variation of x in any area having a 1 nm thickness in the buffer layer is 0.5 or less.
摘要翻译：一种化合物半导体器件，包括：衬底; 形成在所述基板上的电子转移层; 形成在电子转移层上的电子供应层; 以及形成在所述基板和所述电子转移层之间并且包括Al x Ga 1-x N（0＆lt; n 1; x＆n 1; 1）的缓冲层，其中所述x值表示所述缓冲层的厚度方向上的多个最大值和多个最小值并且在缓冲层中具有1nm厚度的任何区域中的x的变化为0.5以下。

8. 发明申请

US20090244777A1 MANUFACTURING METHOD OF MAGNETIC RECORDING MEDIUM 审中-公开
标题翻译：磁记录介质的制造方法
公开(公告)号：US20090244777A1
公开(公告)日：2009-10-01
申请号：US12256097
申请日：2008-10-22
申请人： Sanae Shimizu , Yuji Ito
发明人： Sanae Shimizu , Yuji Ito
IPC分类号： G11B5/60 , G11B5/82 , B01J19/08
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/66 , G11B5/743 , G11B5/855
摘要： A disclosed method for manufacturing a magnetic recording medium includes a first step of forming a magnetic recording film on a non-magnetic substrate and a second step of forming, in the magnetic recording film, a magnetic recording region which is magnetically recordable and an isolation region which is magnetically non-recordable and includes a first isolation-region portion and a second isolation-region portion. The second step includes the sub-steps of performing first ion implantation on the magnetic recording film to form the first isolation-region portion along a boundary of the isolation region to be formed with the magnetic recording region to be formed; and performing second ion implantation on the magnetic recording film to form the second isolation-region portion in the surface of the isolation region to be formed.
摘要翻译：所公开的制造磁记录介质的方法包括在非磁性基板上形成磁记录膜的第一步骤和在磁记录膜中形成磁记录磁记录区和隔离区其是磁性不可记录的并且包括第一隔离区域部分和第二隔离区域部分。第二步包括在磁记录膜上进行第一离子注入以沿着要形成的磁记录区形成隔离区的边界的第一隔离区部分的子步骤; 以及在所述磁记录膜上进行第二离子注入，以形成所述隔离区的表面中的所述第二隔离区。

9. 发明授权

US06183881B2 Magnetic thin film and method for forming the same 失效
标题翻译：磁性薄膜及其形成方法
公开(公告)号：US06183881B2
公开(公告)日：2001-02-06
申请号：US09366277
申请日：1999-08-02
申请人： Sanae Shimizu
发明人： Sanae Shimizu
IPC分类号： H01F100
CPC分类号： C25D3/562 , H01F41/26 , Y10S205/922 , Y10S428/928 , Y10S428/935 , Y10T428/12465 , Y10T428/12771 , Y10T428/12937 , Y10T428/12944 , Y10T428/12951
摘要： A magnetic thin film forming method forms a magnetic thin film on a conductive film by electroplating using a plating bath containing Ni ions, Fe ions, Mo ions and an organic acid. A concentration of the organic acid in the plating bath is 3-20 times a concentration of the Mo ions in the plating bath. An organic acid concentration in the plating bath versus an Mo ion concentration of the plating bath is set to be a suitable value, whereby an Mo mixed amount in the magnetic thin film can be set to be a suitable value. Accordingly, a magnetic thin film having a large specific resistance value and good magnetic characteristics can be formed.
摘要翻译：磁性薄膜形成方法通过使用含有Ni离子，Fe离子，Mo离子和有机酸的电镀液进行电镀而在导电膜上形成磁性薄膜。电镀浴中有机酸的浓度是电镀浴中Mo离子浓度的3-20倍。电镀浴中的有机酸浓度相对于电镀浴的Mo离子浓度设定为合适的值，由此可以将磁性薄膜中的Mo混合量设定为合适的值。因此，可以形成具有大电阻值和良好磁特性的磁性薄膜。

10. 发明授权

US08502270B2 Compound semiconductor device and method for manufacturing the same 有权
标题翻译：复合半导体器件及其制造方法
公开(公告)号：US08502270B2
公开(公告)日：2013-08-06
申请号：US13352645
申请日：2012-01-18
申请人： Sanae Shimizu , Atsushi Yamada
发明人： Sanae Shimizu , Atsushi Yamada
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L29/1075 , H01L29/2003 , H01L29/66462
摘要： A compound semiconductor device including: a substrate; an electron transit layer formed on and above the substrate; and an electron supply layer formed on and above the electron transit layer, wherein a first region or regions having a smaller thermal expansion coefficient than the electron transit layer and a second region or regions having a larger thermal expansion coefficient than the electron transit layer are mixedly present on a surface of the substrate.
摘要翻译：一种复合半导体器件，包括：衬底; 形成在基板上和上方的电子转移层; 以及在电子转移层上形成的电子供给层，其中具有比电子转移层更小的热膨胀系数的第一区域和具有比电子转移层更大的热膨胀系数的第二区域或区域被混合存在于基板的表面上。

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