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    • 2. 发明授权
    • Perovskite oxide thin film EL element
    • 钙钛矿氧化物薄膜EL元件
    • US08193704B2
    • 2012-06-05
    • US12735793
    • 2009-02-17
    • Hiroshi TakashimaYoshiyuki InagumaNoboru MiuraKazushige UedaMitsuru Itoh
    • Hiroshi TakashimaYoshiyuki InagumaNoboru MiuraKazushige UedaMitsuru Itoh
    • H01J1/62
    • C09K11/77H05B33/10H05B33/14H05B33/22
    • There are provided a perovskite oxide thin film EL element in which a hole transport layer/a light-emitting layer/an electron transport layer comprising a perovskite oxide thin film are formed on a lower electrode, and an upper electrode is formed thereon, and a perovskite oxide thin film EL element that provides red light emission in the vicinity of a wavelength of 610 nm, which is the basis of display making. A perovskite oxide thin film EL element comprising a lower electrode 1 comprising a polished single crystal substrate, an electron transport layer 2 comprising a perovskite oxide thin film, which is a dielectric, formed on the lower electrode 1, a light-emitting layer 3 comprising a perovskite oxide thin film formed on the electron transport layer 2, a hole transport layer 4 comprising a perovskite oxide thin film, which is a dielectric, formed on the light-emitting layer 3, a buffer layer 5 formed on the hole transport layer 4, and a transparent upper electrode 6 formed on the buffer layer 5.
    • 提供了一种钙钛矿氧化物薄膜EL元件,其中在下电极上形成空穴传输层/包含钙钛矿氧化物薄膜的发光层/电子传输层,并且在其上形成上电极, 在610nm的波长附近提供红色发光的钙钛矿氧化物薄膜EL元件,这是显示制造的基础。 一种钙钛矿氧化物薄膜EL元件,包括下电极1,其包括抛光的单晶衬底,形成在下电极1上的电介质的包含钙钛矿氧化物薄膜的电子传输层2,发光层3, 在电子传输层2上形成的钙钛矿氧化物薄膜,在发光层3上形成有电介质的包含钙钛矿氧化物薄膜的空穴传输层4,形成在空穴传输层4上的缓冲层5 和形成在缓冲层5上的透明上电极6。
    • 4. 发明申请
    • PEROVSKITE OXIDE THIN FILM EL ELEMENT
    • PEROVSKITE氧化物薄膜EL元件
    • US20110121722A1
    • 2011-05-26
    • US12735793
    • 2009-02-17
    • Hiroshi TakashimaYoshiyuki InagumaNoboru MiuraKazushige UedaMitsuru Itoh
    • Hiroshi TakashimaYoshiyuki InagumaNoboru MiuraKazushige UedaMitsuru Itoh
    • H01J1/62
    • C09K11/77H05B33/10H05B33/14H05B33/22
    • There are provided a perovskite oxide thin film EL element in which a hole transport layer/a light-emitting layer/an electron transport layer comprising a perovskite oxide thin film are formed on a lower electrode, and an upper electrode is formed thereon, and a perovskite oxide thin film EL element that provides red light emission in the vicinity of a wavelength of 610 nm, which is the basis of display making. A perovskite oxide thin film EL element comprising a lower electrode 1 comprising a polished single crystal substrate, an electron transport layer 2 comprising a perovskite oxide thin film, which is a dielectric, formed on the lower electrode 1, a light-emitting layer 3 comprising a perovskite oxide thin film formed on the electron transport layer 2, a hole transport layer 4 comprising a perovskite oxide thin film, which is a dielectric, formed on the light-emitting layer 3, a buffer layer 5 formed on the hole transport layer 4, and a transparent upper electrode 6 formed on the buffer layer 5.
    • 提供了一种钙钛矿氧化物薄膜EL元件,其中在下电极上形成空穴传输层/包含钙钛矿氧化物薄膜的发光层/电子传输层,并且在其上形成上电极, 在610nm的波长附近提供红色发光的钙钛矿氧化物薄膜EL元件,这是显示制造的基础。 一种钙钛矿氧化物薄膜EL元件,包括下电极1,其包括抛光的单晶衬底,形成在下电极1上的电介质的包含钙钛矿氧化物薄膜的电子传输层2,发光层3, 在电子传输层2上形成的钙钛矿氧化物薄膜,在发光层3上形成有电介质的包含钙钛矿氧化物薄膜的空穴传输层4,形成在空穴传输层4上的缓冲层5 和形成在缓冲层5上的透明上电极6。
    • 5. 发明授权
    • High-heat-resistant, crystalline block copolymers and production process
thereof
    • 高耐热结晶嵌段共聚物及其制备方法
    • US5378771A
    • 1995-01-03
    • US40066
    • 1993-03-30
    • Yoshikatsu SatakeYoshiyuki InagumaShinji Yamamoto
    • Yoshikatsu SatakeYoshiyuki InagumaShinji Yamamoto
    • C08G75/02C08G2/00
    • C08G75/024C08G75/0245
    • Disclosed herein are a poly(arylene thioether) block copolymer alternately comprising (A) at least one poly(arylene thioetherketoneketone) block having predominant recurring units of the formula ##STR1## and (B) at least one poly(arylene thioether) block having predominant recurring units of the formula ##STR2## (a) the ratio of the total amount of the poly(arylene thioether) block (B) to the total amount of the poly(arylene thioetherketoneketone) block (A) being within a range of 0.1-9 by weight, (B) the weight average molecular weight of the poly(arylene thioether) block (B) being at least 1,000, and (c) said block copolymer having a melt viscosity of 2-100,000 poises as measured at 380.degree. C. and a shear rate of 1,200/sec as well as a production process of the block copolymer.
    • 本文公开了一种聚(亚芳基硫醚)嵌段共聚物,其交替地包含(A)至少一种具有主题的式(IMA)的重复单元的聚(亚芳基硫醚酮酮)嵌段和(B)至少一种具有主体的聚(亚芳基硫醚)嵌段 (a)聚(亚芳基硫醚)嵌段(B)的总量与聚(亚芳基硫醚酮酮)嵌段(A)的总量的比例在0.1的范围内的重复单元, 9,(B)聚亚芳基硫醚嵌段(B)的重均分子量为至少1,000,和(c)所述嵌段共聚物在380℃下测得的熔融粘度为2-100,000泊 ,剪切速度为1200 /秒,以及嵌段共聚物的制造方法。
    • 6. 发明授权
    • Poly(arylene thioether-ketone) copolymer and production process thereof
    • 聚(亚芳基硫醚 - 酮)共聚物及其制备方法
    • US5288815A
    • 1994-02-22
    • US686978
    • 1991-04-18
    • Yoshikatsu SatakeYoshiyuki InagumaYasuhiro Suzuki
    • Yoshikatsu SatakeYoshiyuki InagumaYasuhiro Suzuki
    • C08G75/02C08F283/00C08G14/00
    • C08G75/024C08G75/0245
    • Disclosed herein are a poly(arylene thioether-ketone) copolymer comprising (A) at least one poly(arylene thioether-ketone) segment having predominant recurring units of the formula ##STR1## wherein the --CO-- and --S-- are in the para position to each other and (B) at least one poly(arylene thioether) segment having predominant recurring units of the formula ##STR2## (a) the ratio of the total amount of the poly(arylene thioether) segment (B) to the total amount of the poly(arylene thioether-ketone) segment (A) ranging from 0.05 to 5 by weight, (b) the number-average polymerization degree of the poly(arylene thioether) segment (B) being higher than 1 but lower than 10, and (c) said copolymer having a melt viscosity of 2-100,000 poises as measured at 350.degree. C. and a shear rate of 1,200/sec as well as a production process of the poly(arylene thioether-ketone) copolymer.
    • 本文公开了一种聚(亚芳基硫醚 - 酮)共聚物,其包含(A)至少一种具有主要重复单元的式(*化学结构*)的聚(亚芳基硫醚 - 酮)链段,其中-CO-和-S-为 (B)至少一种具有主要的式(*化学结构*)重复单元的聚亚芳基硫醚链段(a)聚(亚芳基硫醚)链段的总量的比例 (B)相对于聚(亚芳基硫醚 - 酮)链段(A)的总量为0.05-5重量%,(b)聚(亚芳基硫醚)链段(B)的数均聚合度更高 1,但低于10,和(c)所述共聚物在350℃下测得的熔融粘度为2-100,000泊,剪切速率为1200 /秒,以及聚(亚芳基硫醚 - 酮)共聚物。
    • 7. 发明授权
    • Poly(arylene thioether-ketone) copolymer and production process thereof
    • 聚(亚芳基硫醚 - 酮)共聚物及其制备方法
    • US5391645A
    • 1995-02-21
    • US63822
    • 1993-05-20
    • Yoshikatsu SatakeYoshiyuki InagumaYasuhiro Suzuki
    • Yoshikatsu SatakeYoshiyuki InagumaYasuhiro Suzuki
    • C08G75/02C08K5/35
    • C08G75/024C08G75/0245
    • Disclosed herein are a poly(arylene thioether-ketone) copolymer comprising (A) at least one poly(arylene thioether-ketone) segment having predominant recurring units of the formula ##STR1## wherein the --CO-- and --S-- are in the para position to each other, and (B) at least one poly(arylene thioether) segment having predominant recurring units of the formula ##STR2## (a) the ratio of the total amount of the poly(arylene thioether) segment (B) to the total amount of the poly(arylene thioether-ketone) segment (A) ranging from 0.05 to 5 by weight, (b) the number-average polymerization degree of the poly(arylene thioether) segment (B) being higher than 1 but lower than 10, and (c) said copolymer having a melt viscosity of 2-100,000 poises as measured at 350.degree. C. and a shear rate of 1,200/sec as well as a production process of the poly(arylene thioether-ketone) copolymer.
    • 本文公开了一种聚(亚芳基硫醚 - 酮)共聚物,其包含(A)至少一种具有主要重复单元的式(IMAGE)的聚(亚芳基硫醚 - 酮)链段,其中-CO-和-S-在对位 (B)至少一种具有下列主题重复单元的主要重复单元的聚(亚芳基硫醚)链段:(a)聚(亚芳基硫醚)链段(B)的总量与 聚(亚芳基硫醚 - 酮)链段(A)的总量为0.05-5重量%,(b)聚(亚芳基硫醚)链段(B)的数均聚合度高于1但低于 10,和(c)所述共聚物在350℃下测得的熔融粘度为2-100,000泊,剪切速率为1200 /秒,以及聚(亚芳基硫醚 - 酮)共聚物的制备方法。
    • 8. 发明授权
    • Poly (arylene thioether-ketone-ketone) copolymer and production process
thereof
    • 聚(亚芳基硫醚 - 酮 - 酮)共聚物及其制备方法
    • US5374692A
    • 1994-12-20
    • US35770
    • 1993-03-23
    • Yoshikatsu SatakeYoshiyuki InagumaJiro Masuko
    • Yoshikatsu SatakeYoshiyuki InagumaJiro Masuko
    • C08G75/02C08G2/00
    • C08G75/024C08G75/0245
    • Disclosed herein is a poly(arylene thioether-ketone-ketone) copolymer comprising (A) at least one poly(arylene thioether-ketone-ketone) segment having predominant recurring units of the formula ##STR1## (B) at least one poly(arylene thioether) segment having predominant recurring units of the formula ##STR2## (a) the ratio of the total amount of the poly(arylene thioether) segment (B) to the total amount of the poly(arylene thioether-ketone-ketone) segment (A) ranging from 0.1 to 9 by weight, (b) the weight-average molecular weight of the poly(arylene thioether) segment (B) being at least 200 but lower than 1000, and (c) said copolymer having a melt viscosity of 2-100,000 poises as measured at 380.degree. C. and a shear rate of 1,200/sec as well as a production process of the poly(arylene thioether-ketone-ketone) copolymer. The copolymer has high crystallinity and heat resistance, uniform composition, and excellent melt stability, processability, handling properties, solvent resistance and moisture absorption resistance.
    • 本文公开了一种聚(亚芳基硫醚 - 酮 - 酮)共聚物,其包含(A)至少一种具有下列主题的重复单元的聚(亚芳基硫醚 - 酮 - 酮)链段:(B)至少一种聚(亚芳基 (a)聚(亚芳基硫醚)链段(B)的总量与聚(亚芳基硫醚 - 酮 - 酮)链段(B)的总量的比例(A)的主要重复单元, A)为0.1-9重量%,(b)聚(亚芳基硫醚)链段(B)的重均分子量为至少200但低于1000,和(c)所述共聚物的熔体粘度为 在380℃下测量的2-100,000泊,剪切速率为1200 /秒,以及聚(亚芳基硫醚 - 酮 - 酮)共聚物的制备方法。 共聚物具有高结晶度和耐热性,组成均匀性,以及优异的熔体稳定性,加工性,操作性,耐溶剂性和耐吸湿性。