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1. 发明授权

US08241457B2 Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system 失效
标题翻译：等离子体处理系统，等离子体测量系统，等离子体测量方法和等离子体控制系统
公开(公告)号：US08241457B2
公开(公告)日：2012-08-14
申请号：US12058323
申请日：2008-03-28
申请人： Mitsuo Kato , Masaki Sugiyama , Akihiko Hiroe , Tadahiro Ohmi , Masaki Hirayama
发明人： Mitsuo Kato , Masaki Sugiyama , Akihiko Hiroe , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01J37/3299 , H01J37/32192 , H01J37/32935
摘要： A microwave plasma processing system 10 includes: a processing chamber 100 in which a desired process is applied to a target object using a plasma; a susceptor 106 (stage) in the processing chamber 100 to support the target object; a high-frequency power supply 112 supplying high-frequency electric power to the susceptor 106; a capacitor 108a provided to the susceptor 106; and a measurement device 20 measuring voltages at the pair of plates of the capacitor 108a when high-frequency electric power is supplied from the high-frequency power supply 112 to the susceptor 106.
摘要翻译：微波等离子体处理系统10包括：处理室100，其中使用等离子体将期望的处理应用于目标物体; 处理室100中的基座106（阶段）以支撑目标物体; 向基座106供给高频电力的高频电源112; 设置在基座106上的电容器108a; 以及测量装置20，当从高频电源112向基座106提供高频电力时，测量电容器108a的一对板的电压。

2. 发明申请

US20080241016A1 PLASMA PROCESSING SYSTEM, PLASMA MEASUREMENT SYSTEM, PLASMA MEASUREMENT METHOD, AND PLASMA CONTROL SYSTEM 失效
标题翻译：等离子体处理系统，等离子体测量系统，等离子体测量方法和等离子体控制系统
公开(公告)号：US20080241016A1
公开(公告)日：2008-10-02
申请号：US12058323
申请日：2008-03-28
申请人： Mitsuo KATO , Masaki Sugiyama , Akihiko Hiroe , Tadahiro Ohmi , Masaki Hirayama
发明人： Mitsuo KATO , Masaki Sugiyama , Akihiko Hiroe , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B01J19/12
CPC分类号： H01J37/3299 , H01J37/32192 , H01J37/32935
摘要： A microwave plasma processing system 10 includes: a processing chamber 100 in which a desired process is applied to a target object using a plasma; a susceptor 106 (stage) in the processing chamber 100 to support the target object; a high-frequency power supply 112 supplying high-frequency electric power to the susceptor 106; a capacitor 108a provided to the susceptor 106; and a measurement device 20 measuring voltages at the pair of plates of the capacitor 108a when high-frequency electric power is supplied from the high-frequency power supply 112 to the susceptor 106.
摘要翻译：微波等离子体处理系统10包括：处理室100，其中使用等离子体将期望的处理应用于目标物体; 处理室100中的基座106（阶段）以支撑目标物体; 向基座106供给高频电力的高频电源112; 设置在基座106上的电容器108a; 以及测量装置20，当从高频电源112向基座106提供高频电力时，测量电容器108a的一对板的电压。

3. 发明申请

US20070054064A1 Microwave plasma processing method, microwave plasma processing apparatus, and its plasma head 审中-公开
标题翻译：微波等离子体处理方法，微波等离子体处理装置及其等离子体头
公开(公告)号：US20070054064A1
公开(公告)日：2007-03-08
申请号：US10566241
申请日：2004-12-24
申请人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi , Akihiko Hiroe , Masayuki Kitamura
发明人： Tadahiro Ohmi , Masaki Hirayama , Takahiro Horiguchi , Akihiko Hiroe , Masayuki Kitamura
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： H01L21/306 , H05H1/46 , H05H2001/4622 , H05H2001/463
摘要： A microwave plasma processing method and, in which a linear plasma is produced by means of a microwave, and an object to be processed is subjected to processing under atmospheric pressure or under a pressure near atmospheric pressure when the object is moved, while a surface of the object is maintained at a horizontal position with respect to the linear plasma. A plasma head has an H-plane slot antenna, and slots are arranged alternately on both sides of a centerline of a waveguide at a pitch of λg/2 (λg: wavelength of the microwave with the waveguide). A uniforming line having a distance of n·λg/2 from the slots to an emission end of the plasma head is provided (n: an integral number).
摘要翻译：微波等离子体处理方法，其中通过微波产生线性等离子体和待处理物体在大气压力下或当物体移动时在大气压附近的压力下进行处理，同时物体相对于线性等离子体保持在水平位置。等离子体头具有H平面缝隙天线，并且以波兰的间距（lambdag：具有波导的微波的波长）交替地布置在波导的中心线的两侧。提供了从槽到发射端等离子体头的距离为n.lambdag / 2的均匀线（n：整数）。

4. 发明申请

US20110146910A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20110146910A1
公开(公告)日：2011-06-23
申请号：US12997122
申请日：2009-06-05
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23F1/08 , C23C16/50
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32238
摘要： Uniformity of a process on a substrate is improved. A plasma processing apparatus including a processing container which is formed of metal and receives a substrate to be plasma-processed, an electromagnetic wave source which supplies an electromagnetic wave required to excite plasma in the processing container, and a plurality of dielectrics, through which the electromagnetic wave supplied from the electromagnetic wave source transmits to the inside of the processing container and which have a part that is exposed to the inside of the processing container, on a lower surface of a lid of the processing container, wherein a metal electrode, which is electrically connected to the lid, is formed on a lower surface of each dielectric, a part of each dielectric exposed between the lower surface of the lid and the metal electrode has a substantially polygonal outline when viewed from the inside of the processing container, the plurality of dielectrics are disposed with vertical angles of the polygonal outlines being adjacent to each other, and a surface wave propagating portion, through which the electromagnetic wave is propagated, is formed on the lower surface of the lid exposed inside the processing container and a lower surface of the metal electrode.
摘要翻译：基板上的工艺的均匀性得到改善。一种等离子体处理装置，包括由金属形成并接收待等离子体处理的基板的处理容器，提供在处理容器中激发等离子体所需的电磁波的电磁波源，以及多个电介质，电磁波源提供的电磁波在处理容器的盖的下表面上传送到处理容器的内部并且具有暴露于处理容器内部的部分，其中金属电极电连接到盖，形成在每个电介质的下表面上，暴露在盖的下表面和金属电极之间的每个电介质的一部分从处理容器的内部观察时具有大致多边形的轮廓，多个电介质被设置成具有彼此相邻的多边形轮廓的垂直角度， d暴露在处理容器内部的盖的下表面和金属电极的下表面上形成电磁波传播的表面波传播部分。

5. 发明申请

US20110121736A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110121736A1
公开(公告)日：2011-05-26
申请号：US12997180
申请日：2009-06-03
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： H05H1/24
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32229
摘要： Provided is a plasma processing apparatus having a coaxial waveguide structure in which characteristic impedance of an input side and characteristic impedance of an output side are different. A microwave plasma processing apparatus, which plasma-processes a substrate by exciting a gas by using a microwave, includes: a processing container; a microwave source, which outputs a microwave, a first coaxial waveguide, which transmits the microwave output from the microwave source; and a dielectric plate, which is adjacent to the first coaxial waveguide while facing an inner side of the processing container, and emits the microwave transmitted from the first coaxial waveguide into the processing container. A thickness ratio between an inner conductor and an outer conductor of the first coaxial waveguide is not uniform along a longitudinal direction.
摘要翻译：提供了一种等离子体处理装置，其具有输入侧的特性阻抗和输出侧的特性阻抗不同的同轴波导结构。微波等离子体处理装置，其通过使用微波对气体进行等离子体处理，包括：处理容器; 输出微波的微波源，从微波源传输微波输出的第一同轴波导; 以及电介质板，其与第一同轴波导相邻，同时面向处理容器的内侧，并且将从第一同轴波导传输的微波发射到处理容器中。第一同轴波导管的内导体和外导体之间的厚度比在纵向方向上不均匀。

6. 发明申请

US20100096362A1 PLASMA PROCESSING APPARATUS, POWER SUPPLY APPARATUS AND METHOD FOR OPERATING PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工装置，电源装置和操作等离子体加工装置的方法
公开(公告)号：US20100096362A1
公开(公告)日：2010-04-22
申请号：US12530923
申请日：2008-06-11
申请人： Masaki Hirayama , Tadahiro Ohmi
发明人： Masaki Hirayama , Tadahiro Ohmi
IPC分类号： C23F1/00 , C23F1/08 , C23C16/00 , C23C16/511 , B08B7/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/32229 , H01J37/32238
摘要： In a plasma processing apparatus 10, a microwave transmitted from a microwave source 900 to a coaxial waveguide 600 via a branch waveguide 905 is split into a plurality of microwaves by a branch plate 610 and then transmitted to each internal conductor 315a of a plurality of coaxial waveguides. The microwave transmitted through each internal conductor 315a of the coaxial waveguides is emitted into a processing chamber 100 from each dielectric plate 305 connected with each internal conductor 315a. A desired plasma processing is performed on a substrate G by exciting a processing gas introduced into the processing chamber 100 by the emitted microwave. Expandability for the scale-up is improved by using the plurality of dielectric plates 305. It is possible to design a compact transmission line and supply a low frequency microwave by using the coaxial waveguide in the transmission line.
摘要翻译：在等离子体处理装置10中，通过分支波导905将从微波源900传输到同轴波导600的微波由分支板610分割成多个微波，然后传输到多个同轴的每个内部导体315a 波导。通过同轴波导的每个内部导体315a传输的微波从与每个内部导体315a连接的每个电介质板305发射到处理室100中。通过激发通过发射的微波引入到处理室100中的处理气体，在衬底G上进行期望的等离子体处理。通过使用多个电介质板305可以提高放大的扩展性。通过使用传输线中的同轴波导，可以设计紧凑的传输线并提供低频微波。

7. 发明申请

US20090214400A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20090214400A1
公开(公告)日：2009-08-27
申请号：US12392133
申请日：2009-02-25
申请人： Toshiaki Hongo , Masaki Hirayama , Tadahiro Ohmi
发明人： Toshiaki Hongo , Masaki Hirayama , Tadahiro Ohmi
IPC分类号： B01J19/08
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/3222
摘要： Provided is a plasma processing apparatus capable of generating a uniform plasma by preventing a nonuniformity of a current flow in a slot antenna. A dielectric plate is disposed to close a top opening of a plate cover and a slot antenna for generating plasma is disposed on the dielectric plate. By allowing an outer periphery of the slot antenna to make direct contact with an inner wall portion of the plate cover by using a conductive member having elasticity, when a microwave is supplied to slot antenna, it is possible to make an electrical resistance between the inner wall portion of the processing vessel and the outer periphery of the flat plate antenna substantially the same at any point in the entire circumference of the processing vessel, so that magnitude of the microwave current flowing in the slot antenna can be made approximately the same.
摘要翻译：提供一种能够通过防止狭缝天线中的电流的不均匀性而产生均匀等离子体的等离子体处理装置。电介质板被设置为封闭板盖的顶部开口，并且用于产生等离子体的缝隙天线设置在电介质板上。通过使用具有弹性的导电构件，允许缝隙天线的外周与板盖的内壁部直接接触，当向缝隙天线供给微波时，可以在内侧处理容器的壁部分和平板天线的外周在处理容器的整个圆周上的任何点处基本相同，使得可以使在缝隙天线中流动的微波电流的大小大致相同。

8. 发明授权

US07404991B2 Device and control method for micro wave plasma processing 有权
标题翻译：微波等离子体处理装置与控制方法
公开(公告)号：US07404991B2
公开(公告)日：2008-07-29
申请号：US10472849
申请日：2002-03-28
申请人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Shigetoshi Sugawa , Tetsuya Goto
IPC分类号： H05H1/24
CPC分类号： H01J37/32266 , H01J37/32192 , H01J37/32954 , H01J37/3299
摘要： A microwave is introduced into a process chamber through a waveguide (26) of the plasma process apparatus, thereby generating plasma. A reflection monitor (40) and an electric power monitor (42) monitor the electric power of a reflected wave reflected by the plasma that is generated in the process chamber. Moreover, an incidence monitor (36) and a frequency monitor (48) monitor the frequency of the microwave generated by a magnetron (24). An electric power supplied to the magnetron (24) is controlled based on the monitored electric power of the reflected wave and the monitored frequency. This method thus controls plasma density to a constant level.
摘要翻译：通过等离子体处理装置的波导（26）将微波引入处理室，从而产生等离子体。反射监视器（40）和电力监视器（42）监视由处理室中产生的等离子体反射的反射波的电力。此外，入射监视器（36）和频率监视器（48）监视由磁控管（24）产生的微波的频率。基于受监测的反射波电力和被监测频率来控制提供给磁控管（24）的电力。因此，该方法将等离子体密度控制到恒定水平。

9. 发明申请

US20070163501A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070163501A1
公开(公告)日：2007-07-19
申请号：US10584137
申请日：2004-12-24
申请人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
发明人： Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/3244 , H01J37/32467
摘要： Plasma discharge occurs in the gas circulation space between the upper surface of a shower plate and the lower surface of a cover plate in partial contact with the shower plate, and the supplied microwave is uselessly consumed by this undesired discharge, thereby losing the power. A plasma processing apparatus comprises a shower plate having ejection holes for ejecting gas, a microwave antenna, and a cover plate interposed between the shower plate and the microwave antenna. The material of the cover plate has a relative dielectric constant smaller than that of the material of the shower plate.
摘要翻译：在喷淋板的上表面和与喷淋板部分接触的盖板的下表面之间的气体循环空间中发生等离子体放电，并且所供应的微波无用地被这种不期望的放电消耗，从而失去功率。等离子体处理装置包括具有用于喷射气体的喷射孔的喷淋板，微波天线和插在喷淋板和微波天线之间的盖板。盖板的材料的相对介电常数小于喷淋板材料的相对介电常数。

10. 发明申请

US20070012401A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20070012401A1
公开(公告)日：2007-01-18
申请号：US11445492
申请日：2006-06-02
申请人： Masaki Hirayama , Masashi Nakagawa , Tadahiro Ohmi
发明人： Masaki Hirayama , Masashi Nakagawa , Tadahiro Ohmi
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67069 , H01J2237/2001 , H01L21/67109
摘要： Apparatus for a plasma processing that can minimize losses of power dissipated, allow to shorten processing timescale and improve a yield. There are the insulating and heat insulating means (a plate for insulating and heat-insulating 7C) which is made of the material having low dielectric constant for insulating the high frequency and small thermal conductivity for heat insulating, a placing means (a stage 7A and a cooling plate 7B), for placing an object to be processed, provided with an electrode which is provided in a manner to overlap the insulating and heat insulating means, and to which a high frequency is supplied to generate bias, and a temperature adjusting means (pipings 5A, 5B, a cooling device 5C and a passage 701) which is provided on the placing means and controls temperature of this placing means.
摘要翻译：用于等离子体处理的装置可以最小化耗散功率的损耗，从而缩短处理时间尺度并提高产量。绝缘和绝热装置（用于绝缘和绝热的7C）由具有低介电常数的材料制成，用于绝缘高频和小的导热性用于隔热，放置装置（阶段7 A和冷却板7B），用于放置待加工物体，设置有以与绝缘和隔热装置重叠的方式设置的电极，并且供给高频以产生偏置，温度调节装置（管道5A，5B，冷却装置5C和通道701），其设置在放置装置上并控制该放置装置的温度。

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