专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5286927A Method of manufacturing circuit board and circuit board itself manufactured by said method 失效
标题翻译：通过所述方法制造电路板和电路板本身的方法
公开(公告)号：US5286927A
公开(公告)日：1994-02-15
申请号：US959618
申请日：1992-10-13
申请人： Fumio Ueno , Mitsuo Kasori , Yoshiko Goto , Akihiro Horiguchi
发明人： Fumio Ueno , Mitsuo Kasori , Yoshiko Goto , Akihiro Horiguchi
IPC分类号： C23C16/18 , C23C30/00 , H05K1/03 , H05K1/09 , H05K3/00 , H05K3/10 , H05K3/12 , H05K01/00
CPC分类号： H05K3/1258 , H01L24/48 , H05K1/092 , H05K3/12 , H01L2224/1147 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L24/45 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01023 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/19041 , H01L2924/351 , H05K1/0306 , H05K2201/09036 , H05K2203/0568 , H05K3/0023 , H05K3/10 , H05K3/107 , Y10T29/49155 , Y10T29/49158
摘要： Disclosed is a method of manufacturing a circuit board comprising an insulating substrate and a conductor pattern of a low resistivity which can be prevented from being peeled off the substrate by a thermal stress. The method comprises the step of forming an insulating layer on an insulating substrate, the insulating layer being provided with a groove having a depth of at least 20 .mu.m and shaped like a conductor pattern which is to be formed later, the step of filling the groove of the insulating layer with a paste composition consisting of a powdery material capable of forming an electrically conductive metal, a fine particles having a thermal expansion coefficient smaller than that of the electrically conductive metal, the fine particles being used in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal, and an organic binder, and the step of baking the paste composition so as to form a conductor pattern on the insulating substrate, the conductor pattern containing as a main component the electrically conductive metal and the fine particles having a thermal expansion coefficient smaller than that of the metal, the fine particles being dispersed in the electrically conductive metal in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal.
摘要翻译：公开了一种制造电路板的方法，该电路板包括绝缘基板和具有低电阻率的导体图案，其可以防止被热应力从基板上剥离。该方法包括在绝缘基板上形成绝缘层的步骤，绝缘层设置有深度至少为20（μm）的凹槽，并形成为稍后形成的导体图案，步骤用能够形成导电金属的粉末材料组成的糊料组合物，具有比导电金属的热膨胀系数小的热膨胀系数的微粒填充绝缘层的槽，该微粒的用量为相对于导电性金属的量为0.5〜20体积％的有机粘合剂，以及在该绝缘性基材上形成导体图案的烧成糊剂组合物的步骤，以主要成分为主成分的导体图案导电性金属和热膨胀系数小于金属的微细粒子，微细散布在电极中相对于导电金属的量，导电金属的导电量为0.5〜20体积％。

2. 发明授权

US5284537A Method of manufacturing aluminum nitride structure with anisotropic properties 失效
标题翻译：制造具有各向异性特性的氮化铝结构的方法
公开(公告)号：US5284537A
公开(公告)日：1994-02-08
申请号：US988666
申请日：1992-12-10
申请人： Mitsuo Kasori , Akihiro Horiguchi , Yoshiko Goto , Fumio Ueno
发明人： Mitsuo Kasori , Akihiro Horiguchi , Yoshiko Goto , Fumio Ueno
IPC分类号： C04B35/581 , C04B37/00
CPC分类号： C04B35/581
摘要： In an aluminum nitride structure, a plurality of aluminum nitride regions having different purities are integrally formed to satisfy a predetermined positional relationship, and neighboring regions are brought into direct contact with each other to form an abrupt junction therebetween. Therefore, the aluminum nitride structure has anisotropy in physical properties such as a thermal conductivity, a light transmittance, and a strength.
摘要翻译：在氮化铝结构中，具有不同纯度的多个氮化铝区域一体地形成以满足预定的位置关系，并且相邻区域彼此直接接触以在它们之间形成突然的接合。因此，氮化铝结构体在导热性，透光率和强度等物理性质方面具有各向异性。

3. 发明授权

US5184399A Method of manufacturing circuit board 失效
标题翻译：制造电路板的方法
公开(公告)号：US5184399A
公开(公告)日：1993-02-09
申请号：US723184
申请日：1991-06-28
申请人： Fumio Ueno , Mitsuo Kasori , Yoshiko Goto , Akihiro Horiguchi
发明人： Fumio Ueno , Mitsuo Kasori , Yoshiko Goto , Akihiro Horiguchi
IPC分类号： C23C16/18 , C23C30/00 , H05K1/03 , H05K1/09 , H05K3/00 , H05K3/10 , H05K3/12
CPC分类号： H05K3/1258 , H01L24/48 , H05K1/092 , H05K3/12 , H01L2224/1147 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L24/45 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01023 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/19041 , H01L2924/351 , H05K1/0306 , H05K2201/09036 , H05K2203/0568 , H05K3/0023 , H05K3/10 , H05K3/107 , Y10T29/49155 , Y10T29/49158
摘要： Disclosed is a method of manufacturing a circuit board comprising an insulating substrate and a conductor pattern of a low resistivity which can be prevented from being peeled off the substrate by a thermal stress. The method comprises the step of forming an insulating layer on an insulating substrate, the insulating layer being provided with a groove having a depth of at least 20 .mu.m and shaped like a conductor pattern which is to be formed later, the step of filling the groove of the insulating layer with a paste composition consisting of a powdery material capable of forming an electrically conductive metal, a fine particles having a thermal expansion coefficient smaller than that of the electrically conductive metal, the fine particles being used in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal, and an organic binder, and the step of baking the paste composition so as to form a conductor pattern on the insulating substrate, the conductor pattern containing as a main component the electrically conductive metal and the fine particles having a thermal expansion coefficient smaller than that of the metal, the fine particles being dispersed in the electrically conductive metal in an amount of 0.5 to 20% by volume based on the amount of the electrically conductive metal.

4. 发明授权

US5126293A Light-shielding a delta n sintered body and method of manufacturing the same 失效
标题翻译：遮光三角形烧结体及其制造方法
公开(公告)号：US5126293A
公开(公告)日：1992-06-30
申请号：US625989
申请日：1990-11-29
申请人： Mitsuo Kasori , Akihiro Horiguchi , Fumio Ueno , Yoshiko Goto , Naoki Shutoh
发明人： Mitsuo Kasori , Akihiro Horiguchi , Fumio Ueno , Yoshiko Goto , Naoki Shutoh
IPC分类号： C04B35/581 , H05K1/03
CPC分类号： C04B35/581 , H05K1/0306
摘要： A light-shielding aluminum nitride sintered body essentially consists of aluminum nitride crystal grains and 0.01 to 1.5 wt % (an element content in the case of a transition metal compound) of homogeneously dispersed transition metal particles and/or transition metal compound particles having an average particle size of 5 .mu.m or less and has a thermal conductivity of 200 W/m.K or more.
摘要翻译：遮光型氮化铝烧结体主要由氮化铝晶粒和0.01〜1.5重量％（过渡金属化合物的情况下的元素含量）均匀分散的过渡金属粒子和/或具有平均值的过渡金属化合物粒子组成粒径为5μm以下，导热率为200W / mK以上。

5. 发明授权

US5204080A Method of manufacturing an aluminum nitride structure 失效
标题翻译：制造氮化铝结构的方法
公开(公告)号：US5204080A
公开(公告)日：1993-04-20
申请号：US545691
申请日：1990-06-29
申请人： Mitsuo Kasori , Akihiro Horiguchi , Yoshiko Goto , Fumio Ueno
发明人： Mitsuo Kasori , Akihiro Horiguchi , Yoshiko Goto , Fumio Ueno
IPC分类号： C04B35/581 , C04B37/00
CPC分类号： C04B35/581
摘要： An aluminum nitride structure is prepared by placing an oxygen-trapping substance at at least one position on an aluminum nitride substrate having a first concentration of solution oxygen, and heating the resultant structure in a non-oxidizing atmosphere to locally reduce the first concentration of solution oxygen in said aluminum nitride substrate under said oxygen-trapping substance to a second concentration of solution oxygen by trapping the solution oxygen in the oxygen-trapping substance, thereby forming an aluminum nitride structure in which at least one region of the aluminum nitride structure corresponding to the position of said oxygen-trapping substance, which position has said second oxygen concentration, is integrally formed with aluminum nitride regions having said first concentration of solution oxygen. The aluminum nitride structure of the present invention exhibits anisotropic physical properties.
摘要翻译：通过在具有第一浓度溶液氧的氮化铝衬底上的至少一个位置放置氧捕获物质并在非氧化性气氛中加热所得结构以局部地降低溶液的第一浓度来制备氮化铝结构在所述氧捕获物质下的所述氮化铝衬底中的氧气通过捕集氧吸收物质中的氧气而捕获到第二浓度的溶液氧，由此形成氮化铝结构，其中至少一个氮化铝结构区域对应于所述氧捕获物质的位置具有所述第二氧浓度，与具有所述第一浓度溶液氧的氮化铝区域一体形成。本发明的氮化铝结构显示出各向异性的物理性质。

6. 发明授权

US5182540A Electrical resistor element and method of manufacturing the same 失效
标题翻译：电阻元件及其制造方法
公开(公告)号：US5182540A
公开(公告)日：1993-01-26
申请号：US662628
申请日：1991-02-28
申请人： Naoki Shuto , Fumio Ueno , Yoshiko Goto , Akihiro Horiguchi , Mitsuo Kasori , Motomasa Imai
发明人： Naoki Shuto , Fumio Ueno , Yoshiko Goto , Akihiro Horiguchi , Mitsuo Kasori , Motomasa Imai
IPC分类号： H01C7/00 , C04B35/26 , H01C7/04 , H01C7/12
CPC分类号： C04B35/2666 , H01C7/046
摘要： A resistor element includes a hollow cylindrical sintered body and a pair of electrodes formed on the upper and lower surfaces of the sintered body. The sintered body contains ferrite as a main constituent and contains 0.05 to 10% by volume of an insulator phase formed at the crystal grain boundary of the ferrite crystals. An insulating layer is formed to cover the side surface of the sintered body. The sintered body contains an oxide material selected from the group consisting of 0.005 to 2.0% by weight of bismuth oxide calculated in terms of Bi.sub.2 O.sub.3, 0.01 to 3.0% by weight and 0.005 to 2.0% by weight of silicon oxide and aluminum oxide calculated in terms of SiO.sub.2 and Al.sub.2 O.sub.3 respectively, and 0.01 to 3.5% by weight and 0.001 to 1.6% by weight of silicon oxide and calcium oxide calculated in terms of SiO.sub.2 and CaO, respectively.

7. 发明授权

US6110596A Silicon nitride ceramic circuit substrate and semiconductor device using the same 失效
标题翻译：氮化硅陶瓷电路基板及使用其的半导体器件
公开(公告)号：US6110596A
公开(公告)日：2000-08-29
申请号：US721346
申请日：1996-09-26
申请人： Mitsuo Kasori , Akihiro Horiguchi , Hiroyasu Sumino , Fumio Ueno
发明人： Mitsuo Kasori , Akihiro Horiguchi , Hiroyasu Sumino , Fumio Ueno
IPC分类号： H05K1/05 , C04B37/02 , H01L23/14 , H05K3/38 , C04B35/58
CPC分类号： C04B35/645 , C03C8/24 , C04B35/584 , C04B35/64 , C04B37/025 , H05K3/38 , C04B2235/3208 , C04B2235/3217 , C04B2235/3225 , C04B2235/3229 , C04B2235/3232 , C04B2235/3258 , C04B2235/3878 , C04B2235/3895 , C04B2235/447 , C04B2235/5445 , C04B2235/6025 , C04B2235/658 , C04B2235/72 , C04B2235/96 , C04B2235/9607 , C04B2237/10 , C04B2237/366 , C04B2237/402 , C04B2237/405 , C04B2237/407 , C04B2237/592 , C04B2237/62 , C04B2237/704 , C04B2237/706 , C04B2237/708 , C04B2237/86 , H01L2224/48091 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , Y10T428/24975 , Y10T428/265
摘要： Disclosed are a circuit substrate which comprises a silicon nitride ceramic plate 1 having a thermal conductivity at room temperature of 80 W/mK or more and a metal plate 2 joined to the silicon nitride ceramic plate 1 through a glass layer 3, and a semiconductor device in which the circuit substrate is mounted.
摘要翻译：公开了一种电路基板，其包括在室温下为80W / mK以上的导热性的氮化硅陶瓷板1和通过玻璃层3与氮化硅陶瓷板1接合的金属板2，以及半导体装置其中安装有电路基板。

8. 发明授权

US5641718A Sintered aluminum nitride and circuit substrate using sintered aluminum nitride 失效
标题翻译：烧结氮化铝和使用烧结氮化铝的电路基板
公开(公告)号：US5641718A
公开(公告)日：1997-06-24
申请号：US521475
申请日：1995-08-30
申请人： Akihiro Horiguchi , Katsuyoshi Oh-Ishi , Mitsuo Kasori , Hiroyasu Sumino , Fumio Ueno , Jun Monma , Kazuo Kimura
发明人： Akihiro Horiguchi , Katsuyoshi Oh-Ishi , Mitsuo Kasori , Hiroyasu Sumino , Fumio Ueno , Jun Monma , Kazuo Kimura
IPC分类号： C04B35/581 , C04B41/51 , C04B41/88 , H01L23/15 , H05K1/03 , C04B35/58 , C04B35/03 , B32B7/00
CPC分类号： C04B41/009 , C04B35/581 , C04B41/5133 , C04B41/88 , H01L23/15 , C04B2111/00844 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L24/48 , H01L24/73 , H01L2924/00014 , H01L2924/01004 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01039 , H01L2924/01057 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15174 , H01L2924/15192 , H01L2924/15312 , H01L2924/1532 , H01L2924/16152 , Y10T428/24926
摘要： Disclosed is a sintered aluminum nitride composition and a circuit substrate for use in semiconductor device. The sintered aluminum nitride composition comprises: aluminum nitride; a first component given by a compound containing an element which is selected from the group consisting of alkaline earth elements and group IIIa elements of the periodic table; a second component made of either a simple silicon or a silicon-containig compound; and a third component made of either a simple manganese or a manganese-containing compound. The circuit substrate has an insulating layer which is compoesd of the above-described sintered aluminum nitride composition, and an electrically conductive layer containing an electrically conductive material and the same components as those of the insulating layer.
摘要翻译：公开了一种用于半导体器件的烧结氮化铝组合物和电路基板。烧结的氮化铝组合物包括：氮化铝; 由含有选自元素周期表的碱土元素和IIIa族元素的元素的化合物给出的第一组分; 由简单硅或含硅化合物制成的第二组分; 以及由简单的锰或含锰化合物制成的第三组分。电路基板具有由上述烧结氮化铝组合物构成的绝缘层和包含导电材料的导电层和与绝缘层相同的部件。

9. 发明授权

US5500395A Method for manufacturing an aluminum nitride sintered body 失效
标题翻译：氮化铝烧结体的制造方法
公开(公告)号：US5500395A
公开(公告)日：1996-03-19
申请号：US320758
申请日：1994-10-11
申请人： Fumio Ueno , Mitsuo Kasori , Akihiro Horiguchi , Katsuyoshi Oh-Ishi
发明人： Fumio Ueno , Mitsuo Kasori , Akihiro Horiguchi , Katsuyoshi Oh-Ishi
IPC分类号： C04B35/581 , H01B3/12 , H01L23/15
CPC分类号： C04B35/581 , H01L23/15 , H01L2924/0002 , Y10S428/901 , Y10T428/24917
摘要： Disclosed is an aluminum nitride sintered body which has a high thermal conductivity and a high strength and which can be manufactured through low-temperature, short-time sintering. This aluminum nitride sintered body has an average grain size of aluminum nitride grains of 2 .mu.m or less, a thermal conductivity of 80 W/m.K or more, and a relative density of 98% or more.
摘要翻译：公开了一种具有高导热性和高强度的氮化铝烧结体，其可以通过低温，短时间烧结制造。该氮化铝烧结体的氮化铝粒子的平均粒径为2μm以下，导热率为80W / m·K以上，相对密度为98％以上。

10. 发明授权

US6107638A Silicon nitride circuit substrate and semiconductor device containing same 失效
标题翻译：氮化硅电路基板和含有它们的半导体器件
公开(公告)号：US6107638A
公开(公告)日：2000-08-22
申请号：US42453
申请日：1998-03-16
申请人： Hiroyasu Sumino , Akihiro Horiguchi , Mitsuo Kasori , Fumio Ueno
发明人： Hiroyasu Sumino , Akihiro Horiguchi , Mitsuo Kasori , Fumio Ueno
IPC分类号： H01L21/20 , H01L23/15 , H01L23/373 , H05K3/38 , H01L29/12
CPC分类号： H01L23/15 , C04B35/593 , C04B37/025 , C04B37/026 , C04B41/009 , C04B41/52 , C04B41/90 , H01L21/2007 , H01L23/3735 , H05K3/38 , C04B2111/00405 , C04B2111/00844 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3258 , C04B2235/3262 , C04B2235/3272 , C04B2235/3409 , C04B2235/3865 , C04B2235/3878 , C04B2235/3895 , C04B2235/5436 , C04B2235/5445 , C04B2235/6025 , C04B2235/604 , C04B2235/6565 , C04B2235/6584 , C04B2235/72 , C04B2235/77 , C04B2235/85 , C04B2235/96 , C04B2235/9607 , C04B2237/062 , C04B2237/064 , C04B2237/068 , C04B2237/08 , C04B2237/121 , C04B2237/122 , C04B2237/36 , C04B2237/368 , C04B2237/402 , C04B2237/403 , C04B2237/405 , C04B2237/406 , C04B2237/407 , C04B2237/408 , C04B2237/52 , C04B2237/54 , C04B2237/562 , C04B2237/58 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C04B2237/74 , C04B2237/86 , H01L2224/05599 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/85399 , H01L24/48 , H01L2924/00014 , H01L2924/01012 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01025 , H01L2924/01039 , H01L2924/01057 , H01L2924/01066 , H01L2924/01067 , H01L2924/01322 , H01L2924/1305 , H01L2924/13055 , H01L2924/14 , H01L2924/3025
摘要： Disclosed is a silicon nitride circuit substrate, a manufacturing procee thereof, and a semiconductor device therewith. The circuit substrate comprises: a silicon nitride substrate; a metal circuit plate; and a intermediate layer being interposed between the silicon nitride board and the metal circuit plate for joining the silicon nitride substrate and the metal circuit plate, and having a compound containing an aluminum oxide component. The concentration of the aluminum oxide component in the intermediate layer is higher in the side of the metal circuit plate than in the side of the silicon nitride board.
摘要翻译：公开了一种氮化硅电路基板及其制造方法及其半导体器件。电路基板包括：氮化硅衬底; 金属电路板; 以及介于氮化硅板和用于接合氮化硅衬底和金属电路板的金属电路板之间并具有含有氧化铝组分的化合物的中间层。中间层中的氧化铝组分的浓度在金属电路板的侧面比在氮化硅板侧更高。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式