专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4587638A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US4587638A
公开(公告)日：1986-05-06
申请号：US630115
申请日：1984-07-12
申请人： Mitsuo Isobe , Takayasu Sakurai , Kazuhiro Sawada , Tetsuya Iizuka , Takayuki Ohtani , Akira Aono
发明人： Mitsuo Isobe , Takayasu Sakurai , Kazuhiro Sawada , Tetsuya Iizuka , Takayuki Ohtani , Akira Aono
IPC分类号： G11C29/00 , G11C7/02
CPC分类号： G11C29/84 , G11C29/832
摘要： In the semiconductor memory device according to the present invention, when there is a defective portion in the memory cells, those memory cells are replaced by redundant memory cells. When defective portions are discovered in the memory cells, the fuse elements corresponding to the memory cells having the defective portions are cut off. Voltages of the select lines connected to the memory cells having the defective portions are held at an L level by the resistors. Due to this, the memory cells having the defective portions are not selected.
摘要翻译：在根据本发明的半导体存储器件中，当存储单元中存在缺陷部分时，这些存储单元被冗余存储单元替换。当在存储单元中发现有缺陷的部分时，与具有缺陷部分的存储单元相对应的熔丝元件被切断。连接到具有缺陷部分的存储单元的选择线的电压由电阻器保持在L电平。因此，不选择具有缺陷部分的存储单元。

2. 发明授权

US4939695A Virtual type static semiconductor memory device including refresh detector circuitry 失效
标题翻译：包括刷新检测器电路的虚拟型静态半导体存储器件
公开(公告)号：US4939695A
公开(公告)日：1990-07-03
申请号：US268927
申请日：1988-11-09
申请人： Mitsuo Isobe , Takayasu Sakurai , Kazuhiro Sawada , Kazutaka Nogami , Hisashi Ueno
发明人： Mitsuo Isobe , Takayasu Sakurai , Kazuhiro Sawada , Kazutaka Nogami , Hisashi Ueno
IPC分类号： G11C11/403 , G11C11/406
CPC分类号： G11C11/406
摘要： A virtual type static semiconductor memory device according to the present invention comprises a refresh detector circuit for detecting the enabling operation of a refresh control circuit and a terminal for outputting to an outside a detection signal which is generated from the refresh detector circuit. The virtual type static semiconductor memory device informs a present refresh operation to the outside when it is accessed from the outside during the time period in which a refresh operation is conducted in the semiconductor memory device. A system employing the semiconductor memory device allows a slow access at that time only and allows access to be gained to the semiconductor memory device at high speed at other times.

3. 发明授权

US4812735A Intermediate potential generating circuit 失效
标题翻译：中间电位发生电路
公开(公告)号：US4812735A
公开(公告)日：1989-03-14
申请号：US138798
申请日：1987-12-28
申请人： Kazuhiro Sawada , Takayasu Sakurai
发明人： Kazuhiro Sawada , Takayasu Sakurai
IPC分类号： G05F3/24 , G11C11/407 , H01L21/822 , H01L21/8234 , H01L27/04 , H01L27/088 , G05F3/30
CPC分类号： G05F3/247
摘要： This invention provides an intermediate potential generating circuit comprising a load element of which one end is connected to a first potential supply source, a first transistor of a first conductivity type of which one end and the gate thereof are connected to the other end of the load element, a second transistor of a second conductivity type of which one end is connected to the other end of the first transistor, and the gate and the other end thereof are connected together, a constant-voltage means connected between the other end of the second transistor and a second potential supply source for causing a specific voltage drop between the ends of the contant-voltage means, a third transistor of the first conductivity type of which one end is connected to the first potential supply source, the gate is connected to a node between the load element and the first transistor, and the other end thereof is connected to an output terminal, and a fourth transistor of the second conductivity type which is connected between the output terminal and the second supply source and of which the gate is connected to a node between the second transistor and the constant-voltage means.

4. 发明授权

US5153699A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5153699A
公开(公告)日：1992-10-06
申请号：US717177
申请日：1991-06-18
申请人： Tsukasa Shirotori , Kazuhiro Sawada , Takayasu Sakurai
发明人： Tsukasa Shirotori , Kazuhiro Sawada , Takayasu Sakurai
IPC分类号： H01L21/76 , G11C11/401 , H01L21/82 , H01L21/822 , H01L23/528 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/118
CPC分类号： H01L23/528 , H01L27/10805 , H01L27/118 , H01L27/105 , H01L2924/0002
摘要： A semiconductor device comprises a logic circuit and a memory including a timing signal generator circuit, both formed in a substrate, and a wiring connecting the logic circuit to the memory, in which a diffusion layers connected to receive a predetermined potential is located under an area of the wiring situated between the logic circuit and the memory whereby it is possible to alleviate an effect from minority carriers and a substrate potential variation.
摘要翻译：半导体器件包括逻辑电路和存储器，其包括形成在衬底中的定时信号发生器电路和将逻辑电路连接到存储器的布线，其中连接以接收预定电位的扩散层位于区域位于逻辑电路和存储器之间的布线，由此可以减轻少数载流子的影响和衬底电位变化。

5. 发明授权

US4827453A Semiconductor memory control circuit 失效
标题翻译：半导体存储器控制电路
公开(公告)号：US4827453A
公开(公告)日：1989-05-02
申请号：US127261
申请日：1987-12-01
申请人： Kazuhiro Sawada , Takayasu Sakurai
发明人： Kazuhiro Sawada , Takayasu Sakurai
IPC分类号： G11C11/407 , G11C7/22 , G11C8/18 , G11C11/403 , G11C11/406 , G11C11/4076 , G11C7/00
CPC分类号： G11C7/22 , G11C11/406 , G11C11/4076 , G11C8/18
摘要： A semiconductor memory control circuit separates an externally input operation activation signal from an operation activation signal which is transferred inside a memory, and activates the internal operation activation signal only for a predetermined period of time. This predetermined period is determined in accordance with the cycle time required to achieve refreshment of a memory cell after the external operation activation signal is activated. Thereafter, even if the external operation activation signal is in an activated state, the internal operation activation signal is inactivated. When the internal operation activation signal is in the activated state and the external operation activation signal is inactivated, the internal operation activation signal is inactivated, in accordance with activation of the external operation activation signal.

6. 发明授权

US4757217A Refresh operation control circuit for semiconductor device 失效
标题翻译：半导体器件的刷新操作控制电路
公开(公告)号：US4757217A
公开(公告)日：1988-07-12
申请号：US11882
申请日：1987-02-06
申请人： Kazuhiro Sawada , Takayasu Sakurai , Kazutaka Nogami
发明人： Kazuhiro Sawada , Takayasu Sakurai , Kazutaka Nogami
IPC分类号： G11C11/403 , G11C11/406 , H03K3/356
CPC分类号： G11C11/406
摘要： This invention provides a refresh operation control circuit for a semiconductor memory device. Two flip-flop circuits respectively temporarily hold a normal read start command signal and a refresh start command signal generated within the memory device. A normal operation/refresh operation priority determining circuit wherein 2-input logic circuits are cross-connected so that one output in each case of each of these two flip-flop circuits provides one input of the other flip-flop circuit. The priority determining circuit determines the priority of normal read operation and refresh operation in accordance with the logic level relationship of the one inputs. Either control of the start of normal read operation or control of the start of refresh operation is carried out in accordance with the output of this determination.

7. 发明授权

US4984208A Dynamic read/write memory with improved refreshing operation 失效
标题翻译：动态读/写存储器，具有改进的刷新操作
公开(公告)号：US4984208A
公开(公告)日：1991-01-08
申请号：US364529
申请日：1989-06-12
申请人： Kazuhiro Sawada , Takayasu Sakurai , Kazutaka Nogami
发明人： Kazuhiro Sawada , Takayasu Sakurai , Kazutaka Nogami
IPC分类号： G11C11/403 , G11C11/406
CPC分类号： G11C11/406
摘要： A dynamic read/write memory in which refreshing is performed within a read/write cycle so that write recovery time is not prolonged. A word line corresponding to a current address is continuously rendered operative within a write period. When a write operation is completed, the word line is rendered operative so that refreshing is initiated. A word line is rendered operative only within a given period of a read period.
摘要翻译：动态读/写存储器，其中在读/写周期内执行刷新以使写恢复时间不延长。对应于当前地址的字线在写入周期内连续地进行操作。当写入操作完成时，字线被操作，从而启动刷新。字线只能在读取周期的给定时间段内运行。

8. 发明授权

US09033527B2 Mirror device for vehicle 有权
标题翻译：车载镜装置
公开(公告)号：US09033527B2
公开(公告)日：2015-05-19
申请号：US13591557
申请日：2012-08-22
申请人： Kazuhiro Sawada , Shigeki Yoshida , Kenichi Mizutani
发明人： Kazuhiro Sawada , Shigeki Yoshida , Kenichi Mizutani
IPC分类号： B60R1/074
CPC分类号： B60R1/074
摘要： In a vehicle door mirror device, by a first fixed-face of a fixed projection of a stay and a first rotating-face of a rotating projection of a drive body contacting, further rotation of a mirror is inhibited when the mirror is disposed in a housed position. A slope-angle of the first fixed-face to the housing direction is smaller than a slope-angle of the first rotating-face to a forward folded direction. Contact between the upper end of the first fixed-face and the first rotating-face can accordingly be restricted, and a distance from the lower end of the first fixed-face to the contact position with the first rotating-face can be made short. So, moment acting on the first fixed-face from the first rotating-face can be made small, enabling damage to the lower end position of the first fixed-face to be suppressed. A reduction in weight and cost can accordingly be achieved.
摘要翻译：在车门镜装置中，通过支撑件的固定突起的第一固定面和与驱动体接触的旋转突起的第一旋转面，当反射镜设置在居住位置。第一固定面与壳体方向的倾斜角小于第一旋转面朝向前方折叠的倾斜角度。因此可以限制第一固定面的上端与第一旋转面之间的接触，能够缩短从第一固定面的下端到与第一旋转面的接触位置的距离。因此，可以使从第一旋转面作用在第一固定面上的力矩小，能够抑制第一固定面的下端位置的损伤。因此可以实现重量和成本的降低。

9. 发明授权

US4786448A Plastic processing method of pressure or pressureless sintered ceramic body 失效
标题翻译：压力或无压烧结陶瓷体的塑性加工方法
公开(公告)号：US4786448A
公开(公告)日：1988-11-22
申请号：US901052
申请日：1986-08-27
申请人： Mikio Fukuhara , Yuji Katsumura , Akira Fukawa , Mutsuo Asakawa , Tomio Urushihata , Isao Miyakawa , Kazuhiro Sawada
发明人： Mikio Fukuhara , Yuji Katsumura , Akira Fukawa , Mutsuo Asakawa , Tomio Urushihata , Isao Miyakawa , Kazuhiro Sawada
IPC分类号： C04B35/111 , C04B35/581 , C04B35/645 , C04B35/60
CPC分类号： C04B35/645 , C04B35/111 , C04B35/581
摘要： There are disclosed a plastic processing method of the pressure of pressureless sintered ceramic body composed of at least one aluminum-containing compound selected from the group consisting of aluminum oxide, aluminum nitride and aluminum oxynitride and at least one hard compound selected from the group consisting of carbides, nitrides and oxides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten and silicon and mutual solid solutions thereof, the content of said at least one aluminum-containing compound is 5 to 95% by volume, comprising subjecting the ceramic body to plastic deformation at a temperature of 1300.degree. C. or higher, under a stress of 15 kg/mm.sup.2 or smaller and at a strain rate of 10.sup.-3 /sec or less in a reducing atmosphere or in vacuum, and a ceramics-made molded material comprising a composite ceramic body composed of the same as mentioned above.
摘要翻译：公开了由至少一种选自氧化铝，氮化铝和氮氧化铝的至少一种含铝化合物和至少一种选自以下的硬化合物组成的无压烧结陶瓷体的压力的塑性加工方法：钛，锆，铪，钒，铌，钽，铬，钼，钨和硅及其相互固溶体的碳化物，氮化物和氧化物，所述至少一种含铝化合物的含量为5〜95体积％包括在还原气氛或真空中，在15℃/ mm 2以下的应力和10 -3 /秒以下的应变速率下，使陶瓷体在1300℃以上的温度下进行塑性变形，以及包含与上述相同的复合陶瓷体的陶瓷成型体。

10. 发明授权

US08939590B2 Vehicle mirror device 有权
标题翻译：车载镜装置
公开(公告)号：US08939590B2
公开(公告)日：2015-01-27
申请号：US13611520
申请日：2012-09-12
申请人： Kazuhiro Sawada , Hiroyuki Muto
发明人： Kazuhiro Sawada , Hiroyuki Muto
IPC分类号： G02B7/182 , G02B5/08 , B60R1/062
CPC分类号： B60R1/062
摘要： A covering member appropriately covers an opening hole in a accommodating body. In a vehicle door mirror device, look of a visor body at the outer periphery of a mirror is enhanced by an upper covering plate and a lower covering plate of an inner cover covering an upper recess portion and a lower recess portion, respectively, in a peripheral wall of the visor body. The upper covering plate and the lower covering plate abut the upper recess portion and the lower recess portion, respectively. The upper covering plate and the lower covering plate can accordingly be positioned in the upper recess portion and the lower recess portion, respectively. The upper covering plate and the lower covering plate can accordingly appropriately cover the upper recess portion and the lower recess portion, respectively.
摘要翻译：覆盖构件适当地覆盖容纳体中的开孔。在车门镜装置中，通过分别覆盖上凹部和下凹部的内盖的上盖板和下盖板分别增强了在镜子外周处的面罩主体的外观，遮阳板周围的墙壁。上盖板和下盖板分别抵靠上凹部和下凹部。因此，上覆盖板和下覆盖板可以分别定位在上凹部和下凹部中。因此，上盖板和下盖板分别适当地覆盖上凹部和下凹部。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式