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1. 发明授权

US09076636B2 Plasma processing apparatus, plasma processing method and storage medium for storing program for executing the method 有权
标题翻译：等离子体处理装置，等离子体处理方法和用于存储用于执行该方法的程序的存储介质
公开(公告)号：US09076636B2
公开(公告)日：2015-07-07
申请号：US13232207
申请日：2011-09-14
申请人： Mitsunori Ohata , Hidetoshi Kimura , Kiyoshi Maeda , Jun Hirose , Tsuyoshi Hida
发明人： Mitsunori Ohata , Hidetoshi Kimura , Kiyoshi Maeda , Jun Hirose , Tsuyoshi Hida
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00 , H01J7/24 , H05B31/26 , H01J37/32 , H01L21/67 , H01L21/687
CPC分类号： H01J37/32642 , C23C16/52 , H01J37/32091 , H01L21/67069 , H01L21/68735
摘要： There is provided a plasma processing apparatus including a susceptor 114, having a substrate mounting portion for mounting thereon a substrate, to which a high frequency power is applied; a focus ring 210, disposed to surround the substrate mounted on the substrate mounting portion, including an outer ring 214 having a top surface higher than a top surface of the substrate and an inner ring 212 extending inwardly from the outer ring so as to allow at least a part of the inner ring to be positioned below a periphery of the substrate, the outer ring and the inner ring being formed as a single member; a dielectric ring 220 positioned between the focus ring and the susceptor; a dielectric constant varying device 250 for varying a dielectric constant of the dielectric ring.
摘要翻译：提供了一种等离子体处理装置，其包括：基座114，具有用于安装其上的基板的基板安装部，施加高频电力; 设置为围绕安装在基板安装部分上的基板的聚焦环210，包括具有高于基板的顶表面的顶表面的外环214和从外环向内延伸的内环212，所述内圈的至少一部分被定位在所述基板的周边的下方，所述外圈和所述内圈形成为单个构件; 定位在聚焦环和基座之间的电介质环220; 用于改变介电环的介电常数的介电常数变化装置250。

2. 发明申请

US20120061351A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM FOR STORING PROGRAM FOR EXECUTING THE METHOD 有权
标题翻译：等离子体处理装置，等离子体处理方法和存储程序存储程序用于执行方法
公开(公告)号：US20120061351A1
公开(公告)日：2012-03-15
申请号：US13232207
申请日：2011-09-14
申请人： Mitsunori Ohata , Hidetoshi Kimura , Kiyoshi Maeda , Jun Hirose , Tsuyoshi Hida
发明人： Mitsunori Ohata , Hidetoshi Kimura , Kiyoshi Maeda , Jun Hirose , Tsuyoshi Hida
IPC分类号： C23F1/00 , C23C16/52 , C23C16/458 , C23C16/50 , C23F1/08 , C23C16/00
CPC分类号： H01J37/32642 , C23C16/52 , H01J37/32091 , H01L21/67069 , H01L21/68735
摘要： There is provided a plasma processing apparatus including a susceptor 114, having a substrate mounting portion for mounting thereon a substrate, to which a high frequency power is applied; a focus ring 210, disposed to surround the substrate mounted on the substrate mounting portion, including an outer ring 214 having a top surface higher than a top surface of the substrate and an inner ring 212 extending inwardly from the outer ring so as to allow at least a part of the inner ring to be positioned below a periphery of the substrate, the outer ring and the inner ring being formed as a single member; a dielectric ring 220 positioned between the focus ring and the susceptor; a dielectric constant varying device 250 for varying a dielectric constant of the dielectric ring.
摘要翻译：提供了一种等离子体处理装置，其包括：基座114，具有用于安装其上的基板的基板安装部，施加高频电力; 设置为围绕安装在基板安装部分上的基板的聚焦环210，包括具有高于基板的顶表面的顶表面的外环214和从外环向内延伸的内环212，所述内圈的至少一部分被定位在所述基板的周边的下方，所述外圈和所述内圈形成为单个构件; 定位在聚焦环和基座之间的电介质环220; 用于改变介电环的介电常数的介电常数变化装置250。

3. 发明授权

US09589771B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09589771B2
公开(公告)日：2017-03-07
申请号：US13410994
申请日：2012-03-02
申请人： Yuki Hosaka , Naokazu Furuya , Mitsunori Ohata
发明人： Yuki Hosaka , Naokazu Furuya , Mitsunori Ohata
IPC分类号： C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/3244
摘要： Disclosed is a plasma processing apparatus capable of more accurately controlling plasma. The plasma processing apparatus includes a shower head provided within a processing chamber, in which a substrate accommodated therein is processed, to be faced to a mounting table for mounting the substrate and supply gas from a plurality of gas discharging holes provided on a facing surface that faces the mounting table toward a substrate in a shower pattern; a plurality of exhaust holes that passes through a surface located at an opposite side to the facing surface of the shower head; a circular plate-like body that is disposed parallel to the opposite surface in a exhaust space that communicates with the exhaust holes distributed at the opposite surface and made of a conductive material; and a moving unit configured to move the plate-like body to change a distance between the exhaust holes and the plate-like body.
摘要翻译：公开了能够更精确地控制等离子体的等离子体处理装置。等离子体处理装置包括设置在其中容纳在其中的基板被处理的处理室内的淋浴喷头，以面对安装基板的安装台和从设置在相对表面上的多个气体排出孔供应气体将安装台面向淋浴图案的基板; 多个排气孔，其穿过位于与喷淋头的相对表面相对的一侧的表面; 平行于排气空间中的相对表面设置的圆形板状体，其与分布在相反表面处并由导电材料制成的排气孔连通; 以及移动单元，其构造成移动所述板状体以改变所述排气孔和所述板状体之间的距离。

4. 发明授权

US09011635B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09011635B2
公开(公告)日：2015-04-21
申请号：US13409847
申请日：2012-03-01
申请人： Yuki Hosaka , Naokazu Furuya , Mitsunori Ohata
发明人： Yuki Hosaka , Naokazu Furuya , Mitsunori Ohata
IPC分类号： H01L21/304 , C23F1/00 , H01J37/32
CPC分类号： H01J37/32577 , H01J37/32422 , H01J37/32568 , H01J37/32623
摘要： A plasma processing apparatus includes: a first ground member provided in processing chamber in such a way that at least a portion of the first ground member is exposed to a processing space, wherein the first ground member forms a ground potential; a second ground member provided in an exhaust space of the processing chamber to face the first ground member in such a way that at least a portion of the second ground member is exposed to the exhaust space, wherein the second ground member forms a ground potential; and a ground rod that moves up and down between the first and second ground members and contacts any one of the first or second ground member to adjust a ground state of the first or second ground member.
摘要翻译：等离子体处理装置包括：设置在处理室中的第一接地构件，使得第一接地构件的至少一部分暴露于处理空间，其中第一接地构件形成接地电位; 第二接地构件，设置在处理室的排气空间中，以使得第二接地构件的至少一部分暴露于排气空间的方式面对第一接地构件，其中第二接地构件形成接地电位; 以及接地棒，其在所述第一和第二接地构件之间上下移动，并接触所述第一或第二接地构件中的任一个，以调整所述第一或第二接地构件的基态。

5. 发明申请

US20080083738A1 High rate method for stable temperature control of a substrate 有权
标题翻译：用于基板稳定温度控制的高速率方法
公开(公告)号：US20080083738A1
公开(公告)日：2008-04-10
申请号：US11526120
申请日：2006-09-25
申请人： Mitsunori Ohata
发明人： Mitsunori Ohata
IPC分类号： H05B1/02
CPC分类号： G05D23/22 , G05D23/1917 , G05D23/27
摘要： A method for multi-step temperature control of a substrate includes selecting a first set-point temperature and a second set-point temperature for the substrate, and selecting a first PID parameter set including a first proportional constant KP1, a first integral constant KI1 and a first derivative constant KD1, and selecting a second PID parameter set including a second proportional constant KP2, a second integral constant KI2 and a second derivative constant KD2. The substrate is placed on a substrate holder, the temperature of the substrate is adjusted to the first set-point temperature and the substrate is processed for a first period of time at the first set-point temperature. The temperature of a region of the substrate is changed from the first set-point temperature to the second set-point temperature using the first PID parameter set for a first ramp period of time and using the second PID parameter set for a second ramp period of time, the second ramp period of time following the first ramp period of time. The substrate is then processed for a second period of time at the second set-point temperature.
摘要翻译：一种用于衬底的多步温度控制的方法包括：选择用于衬底的第一设定点温度和第二设定点温度，以及选择包括第一比例常数K P1 ，第二积分常数K I2和二阶导数常数K D2。将衬底放置在衬底保持器上，将衬底的温度调节到第一设定点温度，并且将衬底在第一设定点温度下处理第一时间段。使用在第一斜坡时间段中设定的第一PID参数将基板的区域的温度从第一设定点温度改变到第二设定点温度，并且使用在第二斜坡周期中设定的第二PID参数时间，第一个斜坡时间段后的第二个斜坡时间段。然后将衬底在第二设定点温度下处理第二段时间。

6. 发明申请

US20090266809A1 HIGH RATE METHOD FOR STABLE TEMPERATURE CONTROL OF A SUBSTRATE 有权
标题翻译：用于基板稳定温度控制的高速率方法
公开(公告)号：US20090266809A1
公开(公告)日：2009-10-29
申请号：US12411882
申请日：2009-03-26
申请人： Mitsunori Ohata
发明人： Mitsunori Ohata
IPC分类号： H05B1/02 , G05D23/19 , G05B13/02
CPC分类号： G05D23/22 , G05D23/1917 , G05D23/27
摘要： A method for multi-step temperature control of a substrate includes selecting a first set-point temperature and a second set-point temperature for the substrate, and selecting a first PID parameter set including a first proportional constant KP1, a first integral constant KI1 and a first derivative constant KD1, and selecting a second PID parameter set including a second proportional constant KP2, a second integral constant KI2 and a second derivative constant KD2. The substrate is placed on a substrate holder, the temperature of the substrate is adjusted to the first set-point temperature and the substrate is processed for a first period of time at the first set-point temperature. The temperature of a region of the substrate is changed from the first set-point temperature to the second set-point temperature using the first PID parameter set for a first ramp period of time and using the second PID parameter set for a second ramp period of time, the second ramp period of time following the first ramp period of time. The substrate is then processed for a second period of time at the second set-point temperature.
摘要翻译：一种用于衬底的多步温度控制的方法包括：选择用于衬底的第一设定点温度和第二设定点温度，以及选择第一PID参数组，其包括第一比例常数KP1，第一积分常数KI1和一阶微分常数KD1，并且选择包括第二比例常数KP2，第二积分常数KI2和二次导数常数KD2的第二PID参数集。将衬底放置在衬底保持器上，将衬底的温度调节到第一设定点温度，并且将衬底在第一设定点温度下处理第一时间段。使用在第一斜坡时间段中设定的第一PID参数将基板的区域的温度从第一设定点温度改变到第二设定点温度，并且使用在第二斜坡周期中设定的第二PID参数时间，第一个斜坡时间段后的第二个斜坡时间段。然后将衬底在第二设定点温度下处理第二段时间。

7. 发明申请

US20090212014A1 METHOD AND SYSTEM FOR PERFORMING MULTIPLE TREATMENTS IN A DUAL-CHAMBER BATCH PROCESSING SYSTEM 审中-公开
标题翻译：在双室批处理系统中执行多种处理的方法和系统
公开(公告)号：US20090212014A1
公开(公告)日：2009-08-27
申请号：US12038158
申请日：2008-02-27
申请人： Mitsunori Ohata
发明人： Mitsunori Ohata
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01L21/67781 , H01L21/67109
摘要： A processing system for treating a plurality of substrates is described. The processing system comprises a first batch processing system configured to chemically treat the plurality of substrates and a second batch processing system configured to thermally treat the plurality of substrates. A transfer system is coupled to the first batch processing system and the second batch processing system, and configured to transfer the plurality of substrates into and out of each batch processing system. Furthermore, a control system is coupled to the first batch processing system, the second batch processing system and the transfer system, and configured to execute a chemical removal process.
摘要翻译：描述了一种用于处理多个基板的处理系统。处理系统包括配置成化学处理多个基板的第一批处理系统和被配置为热处理多个基板的第二批处理系统。传送系统耦合到第一批处理系统和第二批处理系统，并且被配置为将多个基板传送到每个批处理系统中和从每个批处理系统传出。此外，控制系统耦合到第一批处理系统，第二批处理系统和传送系统，并且被配置为执行化学去除处理。

8. 发明授权

US08084720B2 High rate method for stable temperature control of a substrate 有权
公开(公告)号：US08084720B2
公开(公告)日：2011-12-27
申请号：US12889200
申请日：2010-09-23
申请人： Mitsunori Ohata
发明人： Mitsunori Ohata
IPC分类号： H05B1/02
CPC分类号： G05D23/22 , G05D23/1917 , G05D23/27
摘要： A method for multi-step temperature control of a substrate includes selecting a first set-point temperature and a second set-point temperature for the substrate, and selecting a first PID parameter set including a first proportional constant KP1, a first integral constant KI1 and a first derivative constant KD1, and selecting a second PID parameter set including a second proportional constant KP2, a second integral constant KI2 and a second derivative constant KD2. The substrate is placed on a substrate holder, the temperature of the substrate is adjusted to the first set-point temperature and the substrate is processed for a first period of time at the first set-point temperature. The temperature of a region of the substrate is changed from the first set-point temperature to the second set-point temperature using the first PID parameter set for a first ramp period of time and using the second PID parameter set for a second ramp period of time, the second ramp period of time following the first ramp period of time. The substrate is then processed for a second period of time at the second set-point temperature.

9. 发明授权

US07893387B2 High rate method for stable temperature control of a substrate 有权
标题翻译：用于基板稳定温度控制的高速率方法
公开(公告)号：US07893387B2
公开(公告)日：2011-02-22
申请号：US12411882
申请日：2009-03-26
申请人： Mitsunori Ohata
发明人： Mitsunori Ohata
IPC分类号： H05B1/02
CPC分类号： G05D23/22 , G05D23/1917 , G05D23/27
摘要： A method for multi-step temperature control of a substrate includes selecting a first set-point temperature and a second set-point temperature for the substrate, and selecting a first PID parameter set including a first proportional constant KP1, a first integral constant KI1 and a first derivative constant KD1, and selecting a second PID parameter set including a second proportional constant KP2, a second integral constant KI2 and a second derivative constant KD2. The substrate is placed on a substrate holder, the temperature of the substrate is adjusted to the first set-point temperature and the substrate is processed for a first period of time at the first set-point temperature. The temperature of a region of the substrate is changed from the first set-point temperature to the second set-point temperature using the first PID parameter set for a first ramp period of time and using the second PID parameter set for a second ramp period of time, the second ramp period of time following the first ramp period of time. The substrate is then processed for a second period of time at the second set-point temperature.
摘要翻译：一种用于衬底的多步温度控制的方法包括：选择用于衬底的第一设定点温度和第二设定点温度，以及选择第一PID参数组，其包括第一比例常数KP1，第一积分常数KI1和一阶微分常数KD1，并且选择包括第二比例常数KP2，第二积分常数KI2和二次导数常数KD2的第二PID参数集。将衬底放置在衬底保持器上，将衬底的温度调节到第一设定点温度，并且将衬底在第一设定点温度下处理第一时间段。使用在第一斜坡时间段中设定的第一PID参数将基板的区域的温度从第一设定点温度改变到第二设定点温度，并且使用在第二斜坡周期中设定的第二PID参数时间，第一个斜坡时间段后的第二个斜坡时间段。然后将衬底在第二设定点温度下处理第二段时间。

10. 发明授权

US07557328B2 High rate method for stable temperature control of a substrate 有权
标题翻译：用于基板稳定温度控制的高速率方法
公开(公告)号：US07557328B2
公开(公告)日：2009-07-07
申请号：US11526120
申请日：2006-09-25
申请人： Mitsunori Ohata
发明人： Mitsunori Ohata
IPC分类号： B23K10/00
CPC分类号： G05D23/22 , G05D23/1917 , G05D23/27
摘要： A method for multi-step temperature control of a substrate includes selecting a first set-point temperature and a second set-point temperature for the substrate, and selecting a first PID parameter set including a first proportional constant KP1, a first integral constant KI1 and a first derivative constant KD1, and selecting a second PID parameter set including a second proportional constant KP2, a second integral constant KI2 and a second derivative constant KD2. The substrate is placed on a substrate holder, the temperature of the substrate is adjusted to the first set-point temperature and the substrate is processed for a first period of time at the first set-point temperature. The temperature of a region of the substrate is changed from the first set-point temperature to the second set-point temperature using the first PID parameter set for a first ramp period of time and using the second PID parameter set for a second ramp period of time, the second ramp period of time following the first ramp period of time. The substrate is then processed for a second period of time at the second set-point temperature.
摘要翻译：一种用于衬底的多步温度控制的方法包括：选择用于衬底的第一设定点温度和第二设定点温度，以及选择第一PID参数组，其包括第一比例常数KP1，第一积分常数KI1和一阶微分常数KD1，并且选择包括第二比例常数KP2，第二积分常数KI2和二次导数常数KD2的第二PID参数集。将衬底放置在衬底保持器上，将衬底的温度调节到第一设定点温度，并且将衬底在第一设定点温度下处理第一时间段。使用在第一斜坡时间段中设定的第一PID参数将基板的区域的温度从第一设定点温度改变到第二设定点温度，并且使用在第二斜坡周期中设定的第二PID参数时间，第一个斜坡时间段后的第二个斜坡时间段。然后将衬底在第二设定点温度下处理第二段时间。

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