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1. 发明授权

US07851772B2 Ion implantation apparatus and ion implantation method 有权
标题翻译：离子注入装置和离子注入方法
公开(公告)号：US07851772B2
公开(公告)日：2010-12-14
申请号：US12100666
申请日：2008-04-10
申请人： Mitsukuni Tsukihara , Takanori Yagita , Hiroshi Sogabe , Toshio Yumiyama , Mitsuaki Kabasawa
发明人： Mitsukuni Tsukihara , Takanori Yagita , Hiroshi Sogabe , Toshio Yumiyama , Mitsuaki Kabasawa
IPC分类号： H01J37/317 , H01J37/28 , G21K1/08
CPC分类号： H01J37/3171 , H01J37/045 , H01J37/304 , H01J2237/0213 , H01J2237/151 , H01J2237/30455 , H01J2237/31703
摘要： An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.
摘要翻译：根据本发明的离子注入装置包括作为偏转装置的驻极电极，其布置在从质量分析磁体装置的出口到质量分析狭缝的前侧的束线的部分处，用于将预定的离子束偏转通过电场的操作从光束轨迹线偏离的方向。当离子束不满足期望条件时，停放电压被施加到驻极电极，由此，离子束通过从光束轨迹线偏转而处于抽真空状态。结果，离子束不能通过质量分析狭缝，因此离子束不会到达晶片以防止不满足条件的离子束照射到晶片。

2. 发明申请

US20080251713A1 ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD 有权
标题翻译：离子植入装置和离子植入方法
公开(公告)号：US20080251713A1
公开(公告)日：2008-10-16
申请号：US12100666
申请日：2008-04-10
申请人： Mitsukuni Tsukihara , Takanori Yagita , Hiroshi Sogabe , Toshio Yumiyama , Mitsuaki Kabasawa
发明人： Mitsukuni Tsukihara , Takanori Yagita , Hiroshi Sogabe , Toshio Yumiyama , Mitsuaki Kabasawa
IPC分类号： B01D59/44 , G21K5/10
CPC分类号： H01J37/3171 , H01J37/045 , H01J37/304 , H01J2237/0213 , H01J2237/151 , H01J2237/30455 , H01J2237/31703
摘要： An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.
摘要翻译：根据本发明的离子注入装置包括作为偏转装置的驻极电极，其布置在从质量分析磁体装置的出口到质量分析狭缝的前侧的束线的部分处，用于将预定的离子束偏转通过电场的操作从光束轨迹线偏离的方向。当离子束不满足期望条件时，停放电压被施加到驻极电极，由此，离子束通过从光束轨迹线偏转而处于抽真空状态。结果，离子束不能通过质量分析狭缝，因此离子束不会到达晶片以防止不满足条件的离子束照射到晶片。

3. 发明申请

US20110297842A1 ION BEAM IRRADIATION SYSTEM AND ION BEAM IRRADIATION METHOD 有权
标题翻译：离子束辐射系统和离子束辐射方法
公开(公告)号：US20110297842A1
公开(公告)日：2011-12-08
申请号：US13154913
申请日：2011-06-07
申请人： Shiro NINOMIYA , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
发明人： Shiro NINOMIYA , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
IPC分类号： H01J3/26
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24405 , H01J2237/30483 , H01J2237/31703
摘要： An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.
摘要翻译：离子束照射方法包括根据束电流测量装置的测量结果计算具有最大光束扫描宽度的扫描电压校正函数，计算与根据预定的束扫描宽度相对应的每个扫描电压校正函数计算出的扫描电压校正功能，同时满足水平方向上的剂量均匀性，测量离子注入期间的机械Y扫描位置，根据测量的机械Y扫描位置改变扫描电压校正功能，使得束扫描区域成为与晶片的一半的外周对应的D字状的多级光束扫描区域，从而减小光束扫描宽度，并且根据侧杯电流测量的测量结果的变化来改变机械Y扫描速度从而保持在垂直方向上的剂量均匀性。

4. 发明授权

US08772741B2 Ion implantation method and ion implantation apparatus 有权
标题翻译：离子注入法和离子注入装置
公开(公告)号：US08772741B2
公开(公告)日：2014-07-08
申请号：US13432936
申请日：2012-03-28
申请人： Shiro Ninomiya , Akihiro Ochi , Yasuhiko Kimura , Yasuharu Okamoto , Toshio Yumiyama
发明人： Shiro Ninomiya , Akihiro Ochi , Yasuhiko Kimura , Yasuharu Okamoto , Toshio Yumiyama
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/3023 , H01J37/3172 , H01J2237/30483 , H01J2237/31701 , H01J2237/31706
摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.
摘要翻译：离子注入方法包括：对离子束进行往复扫描，在垂直于光束扫描方向的方向上机械地扫描晶片，以及将离子注入晶片。将晶片分割为多个注入区域，对于每个注入区域，将波束扫描方向的波束扫描速度设定为变化，通过改变和控制每个注入区域的离子注入量分布来控制光束扫描速度，并且对每个注入区域的离子注入量进行控制，并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定机械扫描速度并控制每个注入区域的晶片机械扫描速度。

5. 发明授权

US08735855B2 Ion beam irradiation system and ion beam irradiation method 有权
标题翻译：离子束照射系统和离子束照射方法
公开(公告)号：US08735855B2
公开(公告)日：2014-05-27
申请号：US13154913
申请日：2011-06-07
申请人： Shiro Ninomiya , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
发明人： Shiro Ninomiya , Toshio Yumiyama , Yasuhiko Kimura , Tetsuya Kudo , Akihiro Ochi
IPC分类号： H01J3/26
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/24405 , H01J2237/30483 , H01J2237/31703
摘要： An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.
摘要翻译：离子束照射方法包括根据束电流测量装置的测量结果计算具有最大光束扫描宽度的扫描电压校正函数，计算与根据预定的束扫描宽度相对应的每个扫描电压校正函数计算出的扫描电压校正功能，同时满足水平方向上的剂量均匀性，测量离子注入期间的机械Y扫描位置，根据测量的机械Y扫描位置改变扫描电压校正功能，使得束扫描区域成为与晶片的一半的外周对应的D字状的多级光束扫描区域，从而减小光束扫描宽度，并且根据侧杯电流测量的测量结果的变化来改变机械Y扫描速度从而保持在垂直方向上的剂量均匀性。

6. 发明申请

US20120252194A1 ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS 有权
标题翻译：离子植入方法和离子植入装置
公开(公告)号：US20120252194A1
公开(公告)日：2012-10-04
申请号：US13432936
申请日：2012-03-28
申请人： Shiro NINOMIYA , Akihiro Ochi , Yasuhiko Kimura , Yasuharu Okamoto , Toshio Yumiyama
发明人： Shiro NINOMIYA , Akihiro Ochi , Yasuhiko Kimura , Yasuharu Okamoto , Toshio Yumiyama
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/3023 , H01J37/3172 , H01J2237/30483 , H01J2237/31701 , H01J2237/31706
摘要： An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions.
摘要翻译：离子注入方法包括：对离子束进行往复扫描，在垂直于光束扫描方向的方向上机械地扫描晶片，以及将离子注入晶片。将晶片分割为多个注入区域，对于每个注入区域，将波束扫描方向的波束扫描速度设定为变化，通过改变和控制每个注入区域的离子注入量分布来控制光束扫描速度，并且对每个注入区域的离子注入量进行控制，并且通过设置晶片来使每个注入区域的光束扫描速度控制中的光束扫描频率和光束扫描幅度保持恒定机械扫描速度并控制每个注入区域的晶片机械扫描速度。

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