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    • 1. 发明授权
    • Plasma processing apparatus and processing method
    • 等离子体处理装置及处理方法
    • US5759424A
    • 1998-06-02
    • US409077
    • 1995-03-22
    • Mitsuko ImatakeIchiro SasakiToru OtsuboHitoshi TamuraTakashi Kamimura
    • Mitsuko ImatakeIchiro SasakiToru OtsuboHitoshi TamuraTakashi Kamimura
    • H01J37/32H05H1/00G01N21/00
    • H01J37/32935H01J37/3299
    • A plasma processing apparatus is provided with a processing chamber having at least a pair of opposing windows to allow observation of the interior thereof, a plasma generation unit for generating a plasma in the processing chamber, a plasma light emission monitoring unit arranged externally of the processing chamber for monitoring the light emission of the plasma through one of the pair of opposing windows, a reference light irradiation unit for irradiating a reference light to the plasma light emission monitoring unit from that window of the pair of opposing windows which is opposite to the plasma light emission monitoring unit through the pair of opposing windows, and a control for controlling a plasma processing state of the substrate to be processed by comparing the data on the light emission of the plasma monitored by the plasma light emission unit and the reference light.
    • 等离子体处理装置具有处理室,该处理室具有至少一对相对的窗口以允许观察其内部;等离子体产生单元,用于在所述处理室中产生等离子体;等离子体发光监测单元,其布置在所述处理的外部 用于通过所述一对相对窗口中的一个监视等离子体的发光的参考光照射单元,用于从与所述等离子体相对的所述一对相对窗口的所述窗口向等离子体发光监测单元照射参考光 通过一对相对窗口的发光监视单元,以及用于通过比较由等离子体发光单元监视的等离子体的发光的数据和参考光来控制待处理的基板的等离子体处理状态的控制。
    • 2. 发明授权
    • Plasma processing system and plasma processing method
    • 等离子体处理系统和等离子体处理方法
    • US06245190B1
    • 2001-06-12
    • US09048075
    • 1998-03-26
    • Toshio MasudaKatsuhiko MitaniTetsunori KajiJun'ichi TanakaKatsuya WatanabeShigeru ShirayoneToru OtsuboIchiro SasakiHideshi FukumotoMakoto Koizumi
    • Toshio MasudaKatsuhiko MitaniTetsunori KajiJun'ichi TanakaKatsuya WatanabeShigeru ShirayoneToru OtsuboIchiro SasakiHideshi FukumotoMakoto Koizumi
    • H05H146
    • H01J37/32091H01J37/32082H01J37/32165H01J37/32623H01J37/3266H01J37/32678
    • A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e., the electron density, electron energy distribution and dissociation state of the process gas in the plasma, can be controlled. The magnetic field is generated by a plurality of coils, an outer shield, and pendant yoke to form magnetic field parallel to the plane of the electrodes in the space between the upper and the bottom electrodes.
    • 一种等离子体处理装置及其方法,其能够通过控制等离子体状态和等离子体状态来实现对于大尺寸晶片同时实现优选的处理速率,精细图案处理能力,同时处理的选择性和均匀性, 通过对其施加磁场来控制电子共振来蚀刻气体的解离状态。 在真空处理室中的一对电极上施加20-300MHz的高频功率,并且在电极之间的空间中形成平行于电极平面的磁场。 通过控制100高斯或更小范围内的磁场的强度,控制由电场鞘部分中的电场和磁场之间的相互作用产生的电子回旋共振和电子鞘共振的形成。 由此,可以控制等离子体状态,即等离子体中的处理气体的电子密度,电子能量分布和解离状态。 磁场由多个线圈,外屏蔽和悬挂磁轭产生,以在上电极和下电极之间的空间中形成平行于电极平面的磁场。
    • 3. 发明授权
    • Plasma processing apparatus and plasma processing method
    • 等离子体处理装置和等离子体处理方法
    • US06422172B1
    • 2002-07-23
    • US09040404
    • 1998-03-18
    • Jyunichi TanakaToru OtsuboToshio MasudaIchiro SasakiTetsunori KajiKatsuya Watanabe
    • Jyunichi TanakaToru OtsuboToshio MasudaIchiro SasakiTetsunori KajiKatsuya Watanabe
    • C23F102
    • H01J37/32082C23C16/505H01J37/32422
    • A plasma processing apparatus has plasma generating means including a means for generating capacitive coupled discharge and a means for radiating electromagnetic waves, so that the energy state of electrons is independently controlled by a combination of a plasma due to capacitive coupled discharge and a plasma due to radiation of electromagnetic waves of a high-frequency, to thereby control the occurrence of radical species, and thereby establishing a compatibility, for example, between high selective etching and high accuracy and high speed in etching or between film quality and film formation rate. Since the density distribution of the plasma can be controlled without any change in hardware configuration by adjusting distributions of the power for capacitive coupled discharge and the power for radiation of electromagnetic waves, the entire surface of a large-sized substrate can be etched at a high accuracy into a fine pattern. The apparatus is also intended to prevent the occurrence of dust caused by plasma processing and changes in characteristics of plasma processing, and hence to enhance productivity of semiconductor devices and/or liquid crystal display elements.
    • 等离子体处理装置具有等离子体产生装置,其包括用于产生电容耦合放电的装置和用于辐射电磁波的装置,从而由​​于电容耦合放电引起的等离子体和等离子体的组合独立地控制电子的能量状态,由于 辐射高频的电磁波,从而控制自由基物质的发生,从而在高选择性蚀刻和高精度和高速蚀刻或膜质量和成膜速率之间建立兼容性。 由于可以通过调节用于电容耦合放电的功率的分布和电磁波的辐射功率来控制等离子体的密度分布而没有硬件配置的任何变化,因此可以将高尺寸基板的整个表面以高 精确到精细模式。 该装置还旨在防止等离子体处理引起的灰尘的发生和等离子体处理的特性的变化,从而提高半导体器件和/或液晶显示元件的生产率。