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1. 发明授权

US08598674B2 Range sensor and range image sensor 有权
标题翻译：量程传感器和量程图像传感器
公开(公告)号：US08598674B2
公开(公告)日：2013-12-03
申请号：US13498202
申请日：2010-11-18
申请人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
发明人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
IPC分类号： H01L27/146 , G01C3/08
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译：范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。光栅电极PG设置在表面1FT上。第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

2. 发明申请

US20130001651A1 SEMICONDUCTOR LIGHT DETECTING ELEMENT 有权
标题翻译：半导体光检测元件
公开(公告)号：US20130001651A1
公开(公告)日：2013-01-03
申请号：US13634249
申请日：2011-02-22
申请人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
发明人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
IPC分类号： H01L31/102
CPC分类号： H01L27/1464 , H01L27/1463 , H01L27/14643 , H01L31/0236
摘要： A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.
摘要翻译：半导体光检测元件设置有具有半导体层的硅衬底和在半导体层上生长且具有比半导体层低的杂质浓度的外延半导体层; 以及设置在外延半导体层的表面上的导体。在外延半导体层中形成感光区域。至少在与半导体层中的感光区域相对的表面中形成不规则的凹凸。不规则的凹凸光学曝光。

3. 发明授权

US09081095B2 Range image sensor 有权
标题翻译：范围图像传感器
公开(公告)号：US09081095B2
公开(公告)日：2015-07-14
申请号：US13578048
申请日：2011-02-23
申请人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
发明人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
IPC分类号： G01J1/46 , G01S7/486 , H01L27/146 , G01S17/89 , H01J1/46
CPC分类号： G01S17/89 , G01J1/46 , G01S7/4863 , H01J1/46
摘要： Since the accumulation regions fd1, fd2 are connected only to a single capacitor C1, a pixel can be decreased in size to improve spatial resolution. And, charges transferred into the accumulation regions fd1, fd2 are temporarily accumulated, thereby improving a signal-noise ratio. The driving circuit DRV conducts dummy switching so that the number of switching of the first switch Φ1 is equal to the number of switching of the second switch Φ2 after termination of the reset period within one cycle, thus making it possible to cancel offset and obtain a more accurate range image.
摘要翻译：由于累积区域fd1，fd2仅与单个电容器C1相连，因此能够减小像素以提高空间分辨率。并且，暂时累积转移到累积区域fd1，fd2的电荷，从而提高信噪比。驱动电路DRV进行虚拟切换，使得第一开关Φ1的切换次数等于在一个周期内的复位周期结束后的第二开关Φ2的切换次数，从而可以消除偏移并获得更准确的范围图像。

4. 发明授权

US08653619B2 Range sensor and range image sensor 有权
标题翻译：量程传感器和量程图像传感器
公开(公告)号：US08653619B2
公开(公告)日：2014-02-18
申请号：US13487514
申请日：2012-06-04
申请人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
发明人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
IPC分类号： H01L31/0224 , H01L27/146
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG. The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译：范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。光栅电极PG设置在表面1FT上。第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

5. 发明授权

US09293499B2 Semiconductor light detecting element having silicon substrate and conductor 有权
标题翻译：具有硅衬底和导体的半导体光检测元件
公开(公告)号：US09293499B2
公开(公告)日：2016-03-22
申请号：US13634249
申请日：2011-02-22
申请人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
发明人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
IPC分类号： H01L27/146 , H01L31/0236
CPC分类号： H01L27/1464 , H01L27/1463 , H01L27/14643 , H01L31/0236
摘要： A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.
摘要翻译：半导体光检测元件设置有具有半导体层的硅衬底和在半导体层上生长且具有比半导体层低的杂质浓度的外延半导体层; 以及设置在外延半导体层的表面上的导体。在外延半导体层中形成感光区域。至少在与半导体层中的感光区域相对的表面中形成不规则的凹凸。不规则的凹凸光学曝光。

6. 发明申请

US20120312966A1 RANGE IMAGE SENSOR 有权
标题翻译：范围图像传感器
公开(公告)号：US20120312966A1
公开(公告)日：2012-12-13
申请号：US13578048
申请日：2011-02-23
申请人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
发明人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
IPC分类号： H01L27/146
CPC分类号： G01S17/89 , G01J1/46 , G01S7/4863 , H01J1/46
摘要： Since the accumulation regions fd1, fd2 are connected only to a single capacitor C1, a pixel can be decreased in size to improve spatial resolution. And, charges transferred into the accumulation regions fd1, fd2 are temporarily accumulated, thereby improving a signal-noise ratio. The driving circuit DRV conducts dummy switching so that the number of switching of the first switch Φ1 is equal to the number of switching of the second switch Φ2 after termination of the reset period within one cycle, thus making it possible to cancel offset and obtain a more accurate range image.
摘要翻译：由于累积区域fd1，fd2仅与单个电容器C1相连，因此能够减小像素以提高空间分辨率。并且，暂时累积转移到累积区域fd1，fd2的电荷，从而提高信噪比。驱动电路DRV进行虚拟切换，使得第一开关Φ1的切换次数等于在一个周期内的复位周期结束后的第二开关Φ2的切换次数，从而可以消除偏移并获得更准确的范围图像。

7. 发明申请

US20120181650A1 RANGE SENSOR AND RANGE IMAGE SENSOR 有权
标题翻译：范围传感器和范围图像传感器
公开(公告)号：US20120181650A1
公开(公告)日：2012-07-19
申请号：US13498202
申请日：2010-11-18
申请人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
发明人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译：范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。光栅电极PG设置在表面1FT上。第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

8. 发明授权

US08759933B2 Solid-state image pickup element, method of manufacturing the same, and electronic apparatus using the same 失效
标题翻译：固体摄像元件及其制造方法以及使用其的电子设备
公开(公告)号：US08759933B2
公开(公告)日：2014-06-24
申请号：US12788503
申请日：2010-05-27
申请人： Yoshinori Toumiya , Kiyotaka Tabuchi , Yasuyuki Shiga , Iwao Sugiura , Naoyuki Miyashita , Masanori Iwasaki , Katsunori Kokubun , Tomohiro Yamazaki
发明人： Yoshinori Toumiya , Kiyotaka Tabuchi , Yasuyuki Shiga , Iwao Sugiura , Naoyuki Miyashita , Masanori Iwasaki , Katsunori Kokubun , Tomohiro Yamazaki
IPC分类号： H01L21/02 , H01L27/146 , H01L31/0232
CPC分类号： H01L21/02263 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14643 , H01L27/14685 , H01L31/02327
摘要： Disclosed herein is a solid-state image pickup element, including: a semiconductor substrate; a pixel portion which is formed on the semiconductor substrate and in which a plurality of pixels each having a photoelectric conversion portion are arranged; an insulating layer formed on the semiconductor substrate so as to cover the photoelectric conversion portion; a hole portion formed in the insulating layer and above the photoelectric conversion portion; a silicon nitride layer formed so as to cover a bottom surface and a side surface of the hole portion; and a buried layer formed on the silicon nitride layer, wherein the silicon nitride layer is formed so as to contain a silicon nitride formed by utilizing an atomic layer deposition method.
摘要翻译：本文公开了一种固态摄像元件，包括：半导体衬底; 形成在半导体衬底上并且其中布置有多个具有光电转换部分的像素的像素部分; 形成在所述半导体基板上以覆盖所述光电转换部的绝缘层; 形成在所述绝缘层中并且在所述光电转换部分上方的孔部; 形成为覆盖所述孔部的底面和侧面的氮化硅层; 以及形成在氮化硅层上的掩埋层，其中形成氮化硅层以便容纳通过利用原子层沉积法形成的氮化硅。

9. 发明申请

US20100136853A1 CONNECTOR 有权
标题翻译：连接器
公开(公告)号：US20100136853A1
公开(公告)日：2010-06-03
申请号：US12599630
申请日：2008-05-13
申请人： Tomohiro Yamazaki
发明人： Tomohiro Yamazaki
IPC分类号： H01R13/42
CPC分类号： H01R13/4368 , H01R13/4226
摘要： The stable temporarily locked state of a housing and a rear holder is kept. When the rear holder (12) is positioned at its temporarily locked position, the front claw (45) of the locking part (44) for temporary locking of the rear holder (12) slips under the locking piece (24) for temporary locking of the housing (11), and holds the locking piece (24) in cooperation with the rear claw (46). The temporarily locked state cannot be easily lost.
摘要翻译：保持壳体和后保持器的稳定的临时锁定状态。当后保持器（12）位于其临时锁定位置时，用于临时锁定后保持器（12）的锁定部分（44）的前爪（45）滑动在锁定件（24）下方，用于临时锁定壳体（11），并且与后爪（46）协作地保持锁定片（24）。临时锁定状态不容易丢失。

10. 发明申请

US20060263012A1 Optical connector 有权
标题翻译：光连接器
公开(公告)号：US20060263012A1
公开(公告)日：2006-11-23
申请号：US11430787
申请日：2006-05-08
申请人： Tomohiro Yamazaki
发明人： Tomohiro Yamazaki
IPC分类号： G02B6/36
CPC分类号： H04B10/801
摘要： This invention solves this problem by including an optical transmitter module and optical receiver module inside the connector so as to carry out spatial optical transmitting of optical signal obtained by conversion with the optical transmitter module for optical transmitting between the optical transmitter module and the optical receiver module opposing each other across space.
摘要翻译：本发明通过在连接器内部包括光发射模块和光接收模块来解决这个问题，从而通过光传输模块进行光传输获得的光信号的空间光传输，用于光传输模块与光接收模块之间的光传输在空间上相互对抗

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