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1. 发明申请

US20130001651A1 SEMICONDUCTOR LIGHT DETECTING ELEMENT 有权
标题翻译：半导体光检测元件
公开(公告)号：US20130001651A1
公开(公告)日：2013-01-03
申请号：US13634249
申请日：2011-02-22
申请人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
发明人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
IPC分类号： H01L31/102
CPC分类号： H01L27/1464 , H01L27/1463 , H01L27/14643 , H01L31/0236
摘要： A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.
摘要翻译：半导体光检测元件设置有具有半导体层的硅衬底和在半导体层上生长且具有比半导体层低的杂质浓度的外延半导体层; 以及设置在外延半导体层的表面上的导体。在外延半导体层中形成感光区域。至少在与半导体层中的感光区域相对的表面中形成不规则的凹凸。不规则的凹凸光学曝光。

2. 发明授权

US08598674B2 Range sensor and range image sensor 有权
标题翻译：量程传感器和量程图像传感器
公开(公告)号：US08598674B2
公开(公告)日：2013-12-03
申请号：US13498202
申请日：2010-11-18
申请人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
发明人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
IPC分类号： H01L27/146 , G01C3/08
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译：范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。光栅电极PG设置在表面1FT上。第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

3. 发明授权

US09081095B2 Range image sensor 有权
标题翻译：范围图像传感器
公开(公告)号：US09081095B2
公开(公告)日：2015-07-14
申请号：US13578048
申请日：2011-02-23
申请人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
发明人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
IPC分类号： G01J1/46 , G01S7/486 , H01L27/146 , G01S17/89 , H01J1/46
CPC分类号： G01S17/89 , G01J1/46 , G01S7/4863 , H01J1/46
摘要： Since the accumulation regions fd1, fd2 are connected only to a single capacitor C1, a pixel can be decreased in size to improve spatial resolution. And, charges transferred into the accumulation regions fd1, fd2 are temporarily accumulated, thereby improving a signal-noise ratio. The driving circuit DRV conducts dummy switching so that the number of switching of the first switch Φ1 is equal to the number of switching of the second switch Φ2 after termination of the reset period within one cycle, thus making it possible to cancel offset and obtain a more accurate range image.
摘要翻译：由于累积区域fd1，fd2仅与单个电容器C1相连，因此能够减小像素以提高空间分辨率。并且，暂时累积转移到累积区域fd1，fd2的电荷，从而提高信噪比。驱动电路DRV进行虚拟切换，使得第一开关Φ1的切换次数等于在一个周期内的复位周期结束后的第二开关Φ2的切换次数，从而可以消除偏移并获得更准确的范围图像。

4. 发明授权

US08653619B2 Range sensor and range image sensor 有权
标题翻译：量程传感器和量程图像传感器
公开(公告)号：US08653619B2
公开(公告)日：2014-02-18
申请号：US13487514
申请日：2012-06-04
申请人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
发明人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
IPC分类号： H01L31/0224 , H01L27/146
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG. The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译：范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。光栅电极PG设置在表面1FT上。第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

5. 发明授权

US09293499B2 Semiconductor light detecting element having silicon substrate and conductor 有权
标题翻译：具有硅衬底和导体的半导体光检测元件
公开(公告)号：US09293499B2
公开(公告)日：2016-03-22
申请号：US13634249
申请日：2011-02-22
申请人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
发明人： Mitsuhito Mase , Akira Sakamoto , Takashi Suzuki , Tomohiro Yamazaki , Yoshimaro Fujii
IPC分类号： H01L27/146 , H01L31/0236
CPC分类号： H01L27/1464 , H01L27/1463 , H01L27/14643 , H01L31/0236
摘要： A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.
摘要翻译：半导体光检测元件设置有具有半导体层的硅衬底和在半导体层上生长且具有比半导体层低的杂质浓度的外延半导体层; 以及设置在外延半导体层的表面上的导体。在外延半导体层中形成感光区域。至少在与半导体层中的感光区域相对的表面中形成不规则的凹凸。不规则的凹凸光学曝光。

6. 发明申请

US20120312966A1 RANGE IMAGE SENSOR 有权
标题翻译：范围图像传感器
公开(公告)号：US20120312966A1
公开(公告)日：2012-12-13
申请号：US13578048
申请日：2011-02-23
申请人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
发明人： Takashi Suzuki , Mitsuhito Mase , Tomohiro Yamazaki
IPC分类号： H01L27/146
CPC分类号： G01S17/89 , G01J1/46 , G01S7/4863 , H01J1/46
摘要： Since the accumulation regions fd1, fd2 are connected only to a single capacitor C1, a pixel can be decreased in size to improve spatial resolution. And, charges transferred into the accumulation regions fd1, fd2 are temporarily accumulated, thereby improving a signal-noise ratio. The driving circuit DRV conducts dummy switching so that the number of switching of the first switch Φ1 is equal to the number of switching of the second switch Φ2 after termination of the reset period within one cycle, thus making it possible to cancel offset and obtain a more accurate range image.
摘要翻译：由于累积区域fd1，fd2仅与单个电容器C1相连，因此能够减小像素以提高空间分辨率。并且，暂时累积转移到累积区域fd1，fd2的电荷，从而提高信噪比。驱动电路DRV进行虚拟切换，使得第一开关Φ1的切换次数等于在一个周期内的复位周期结束后的第二开关Φ2的切换次数，从而可以消除偏移并获得更准确的范围图像。

7. 发明申请

US20120181650A1 RANGE SENSOR AND RANGE IMAGE SENSOR 有权
标题翻译：范围传感器和范围图像传感器
公开(公告)号：US20120181650A1
公开(公告)日：2012-07-19
申请号：US13498202
申请日：2010-11-18
申请人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
发明人： Mitsuhito Mase , Takashi Suzuki , Tomohiro Yamazaki
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , G01S7/4814 , G01S7/4816 , G01S7/4863 , G01S17/89 , H01L27/14603 , H01L27/1464
摘要： A range image sensor 1 is provided with a semiconductor substrate 1A having a light incident surface 1BK and a surface 1FT opposite to the light incident surface 1BK, a photogate electrode PG, first and second gate electrodes TX1, TX2, first and second semiconductor regions FD1, FD2, and a third semiconductor region SR1. The photogate electrode PG is provided on the surface 1FT. The first and second gate electrodes TX1, TX2 are provided next to the photogate electrode PG The first and second semiconductor regions FD1, FD2 accumulate respective charges flowing into regions immediately below the respective gate electrodes TX1, TX2. The third semiconductor region SR1 is located away from the first and second semiconductor regions FD1, FD2 and on the light incident surface 1BK side and has the conductivity type opposite to that of the first and second semiconductor regions FD1, FD2.
摘要翻译：范围图像传感器1设置有具有光入射表面1BK和与光入射表面1BK相对的表面1FT的半导体衬底1A，光栅电极PG，第一和第二栅电极TX1，TX2，第一和第二半导体区域FD1 ，FD2和第三半导体区域SR1。光栅电极PG设置在表面1FT上。第一和第二栅电极TX1，TX2设置在光栅电极PG的旁边。第一和第二半导体区域FD1，FD2累积流入各栅极电极TX1，TX2正下方的各个电荷。第三半导体区域SR1远离第一和第二半导体区域FD1，FD2以及光入射面1BK侧，并且具有与第一和第二半导体区域FD1，FD2相反的导电类型。

8. 发明授权

US06856637B2 Optical transmitter having photodiode 失效
标题翻译：具有光电二极管的光发射机
公开(公告)号：US06856637B2
公开(公告)日：2005-02-15
申请号：US10247167
申请日：2002-09-19
申请人： Masahiko Tsumori , Haruo Tanaka , Tomohiro Yamazaki
发明人： Masahiko Tsumori , Haruo Tanaka , Tomohiro Yamazaki
IPC分类号： H01S5/00 , H01S5/022 , H01S3/13 , H01S3/00 , H01S3/08
CPC分类号： H04B10/501 , H01S5/02252 , H01S5/0683
摘要： An optical transmitter is equipped with a laser diode and a light detector provided on a packaging base, in which the light detector has a semiconductor substrate side arranged on a packaging base side, a semiconductor junction plane, a side surface which is roughly orthogonal to the semiconductor junction plane, and a facing surface which faces the side surface, wherein the facing surface is partially or completely inclined to reflect the output light from the laser diode incident from the side surface to the semiconductor junction plane of the light detector.
摘要翻译：光发射机配备有激光二极管和设置在封装基座上的光检测器，其中光检测器具有布置在封装基座侧的半导体衬底侧，半导体接合面，大致与半导体结面和面对侧面的面对面，其中所述面对部分或完全倾斜以反射从所述光检测器的侧表面入射到所述半导体结面的激光二极管的输出光。

9. 外观设计

USD455798S1 Pirate ship toy 失效
标题翻译：海盗船玩具
公开(公告)号：USD455798S1
公开(公告)日：2002-04-16
申请号：US29142986
申请日：2001-06-07
申请人： Tomohiro Yamazaki
设计人： Tomohiro Yamazaki

10. 发明授权

US06183332B2 Toy 有权
标题翻译：玩具
公开(公告)号：US06183332B2
公开(公告)日：2001-02-06
申请号：US09161779
申请日：1998-09-29
申请人： Tomohiro Yamazaki
发明人： Tomohiro Yamazaki
IPC分类号： A63H3100
CPC分类号： G09B25/02 , A63H31/00
摘要： An intellectual training toy has a large freedom of arrangement and enables connection between the driven ember and the rotary driving member even while the rotary driving member is rotating. The toy includes a base member which has a driving mechanism built-in and a field portion having a smooth surface. A rotary member is engaged with the driving mechanism and is rotatable around an axis perpendicular to the smooth surface of the field portion. A driving body having a rotary portion is attachable to the field portion of the base member so that the rotary portion is connected to the rotary member to rotate according to a rotation of the rotary member. A first driven body can be held at a desired position on the field portion of the base member by magnetic attraction force and can engage with the rotary portion of the driving body while being held on the field portion of the base member by a magnetic attraction force. The driven body has a first acting portion which takes action according to the rotation of the rotary portion.
摘要翻译：智能训练玩具具有很大的布置自由度，并且即使在旋转驱动构件旋转的同时也能够使驱动的止挡器与旋转驱动构件之间的连接。该玩具包括具有内置驱动机构的底座部件和具有光滑表面的磁场部分。旋转构件与驱动机构接合并且能够围绕与场部的平滑表面垂直的轴线旋转。具有旋转部分的驱动体可附接到基座部件的磁场部分，使得旋转部分与旋转部件连接以根据旋转部件的旋转而旋转。第一被驱动体可以通过磁力吸引力保持在基部构件的场部的期望位置，并且可以通过磁力吸引力将其保持在基部构件的场部上而与驱动体的旋转部接合。被驱动体具有根据旋转部的旋转而起作用的第一作用部。

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