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1. 发明授权

US06313534B1 Ohmic electrode, method and multi-layered structure for making same 失效
标题翻译：欧姆电极，制作方法和多层结构
公开(公告)号：US06313534B1
公开(公告)日：2001-11-06
申请号：US09273272
申请日：1999-03-22
申请人： Mitsuhiro Nakamura , Mitsumasa Ogura , Masanori Murakami
发明人： Mitsuhiro Nakamura , Mitsumasa Ogura , Masanori Murakami
IPC分类号： H01L2348
CPC分类号： H01L21/28575 , H01L29/452
摘要： To realize an ohmic electrode having practically satisfactory characteristics relative to GaAs semiconductors, first formed on an n+-type GaAs substrate are a Ni thin film with a thickness between 8 nm and 30 nm, an In thin film with a thickness between 2 nm and 6 nm and a Ge thin film with a thickness between 10 nm and 50 nm, sequentially. After that, the n+-type GaAs substrate having formed the Ni thin film, In thin film and Ge thin film is annealed at a temperature between 300 to 600° C. for a few seconds to minutes. As a result, the ohmic electrode has a multi-layered structure including an n++-type re-grown GaAs layer re-grown from the n+-type GaAs substrate, InGaAs layer and NiGe thin film. Alternatively, before the annealing, a thin film of a refractory metal or its compound, such as Nb thin film, with or without another thin film of a wiring metal, such as Au thin film, may be further formed on the Ge thin film.
摘要翻译：为了实现相对于GaAs半导体具有实际令人满意的特性的欧姆电极，首先形成在n +型GaAs衬底上的是厚度在8nm和30nm之间的Ni薄膜，厚度在2nm和6nm之间的In薄膜 nm，厚度为10nm〜50nm的Ge薄膜。之后，形成Ni薄膜，In薄膜和Ge薄膜的n +型GaAs衬底在300-600℃的温度下退火几秒钟至几分钟。结果，欧姆电极具有包括从n +型GaAs衬底，InGaAs层和NiGe薄膜再生长的n ++型再生长的GaAs层的多层结构。或者，在退火之前，可以在Ge薄膜上进一步形成难熔金属或其化合物（例如Nb薄膜）的薄膜，其具有或不具有诸如Au薄膜的布线金属的另一薄膜。

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