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    • 1. 发明授权
    • Ohmic electrode, method and multi-layered structure for making same
    • 欧姆电极,制作方法和多层结构
    • US06313534B1
    • 2001-11-06
    • US09273272
    • 1999-03-22
    • Mitsuhiro NakamuraMitsumasa OguraMasanori Murakami
    • Mitsuhiro NakamuraMitsumasa OguraMasanori Murakami
    • H01L2348
    • H01L21/28575H01L29/452
    • To realize an ohmic electrode having practically satisfactory characteristics relative to GaAs semiconductors, first formed on an n+-type GaAs substrate are a Ni thin film with a thickness between 8 nm and 30 nm, an In thin film with a thickness between 2 nm and 6 nm and a Ge thin film with a thickness between 10 nm and 50 nm, sequentially. After that, the n+-type GaAs substrate having formed the Ni thin film, In thin film and Ge thin film is annealed at a temperature between 300 to 600° C. for a few seconds to minutes. As a result, the ohmic electrode has a multi-layered structure including an n++-type re-grown GaAs layer re-grown from the n+-type GaAs substrate, InGaAs layer and NiGe thin film. Alternatively, before the annealing, a thin film of a refractory metal or its compound, such as Nb thin film, with or without another thin film of a wiring metal, such as Au thin film, may be further formed on the Ge thin film.
    • 为了实现相对于GaAs半导体具有实际令人满意的特性的欧姆电极,首先形成在n +型GaAs衬底上的是厚度在8nm和30nm之间的Ni薄膜,厚度在2nm和6nm之间的In薄膜 nm,厚度为10nm〜50nm的Ge薄膜。 之后,形成Ni薄膜,In薄膜和Ge薄膜的n +型GaAs衬底在300-600℃的温度下退火几秒钟至几分钟。 结果,欧姆电极具有包括从n +型GaAs衬底,InGaAs层和NiGe薄膜再生长的n ++型再生长的GaAs层的多层结构。 或者,在退火之前,可以在Ge薄膜上进一步形成难熔金属或其化合物(例如Nb薄膜)的薄膜,其具有或不具有诸如Au薄膜的布线金属的另一薄膜。
    • 3. 发明授权
    • Data collection device, program, and data collection method
    • 数据采集​​装置,程序和数据采集方法
    • US08589339B2
    • 2013-11-19
    • US11162685
    • 2005-09-19
    • Mitsuhiro Nakamura
    • Mitsuhiro Nakamura
    • G06F17/30
    • G06Q20/127G06Q20/18G07F17/0014
    • The present invention provides a data collection device that lightens a registering workload for an administrator and prevents that a set of procedures for a data collection is started later than a registered start time. A data collection device 101 comprises: a database 105 in which start times of the sets of the procedures have been previously registered; and a registration control unit operable, if a received specified time is the same as any of the previously registered start times, to search and retrieve a time that is different from any of the previously registered start times in association with a new set of the procedures, instead of registering the specified time.
    • 本发明提供了一种数据收集装置,其减轻管理员的注册工作量,并防止在注册的开始时间之后开始一组用于数据收集的过程。 数据收集装置101包括:数据库105,其中已经预先登记了这些程序集的开始时间; 以及注册控制单元,如果所接收的指定时间与之前注册的开始时间中的任何一个相同,则可以搜索和检索与先前注册的开始时间之间的任何时间相关联的新的一组过程 ,而不是注册指定的时间。
    • 10. 发明授权
    • Polishing apparatus
    • 抛光设备
    • US07255635B2
    • 2007-08-14
    • US11345406
    • 2006-02-02
    • Tadakazu MiyashitaHarumichi KoyamaMitsuhiro Nakamura
    • Tadakazu MiyashitaHarumichi KoyamaMitsuhiro Nakamura
    • B24B5/36
    • B24B37/08F16H57/10Y10T74/19981
    • In polishing apparatus of the present invention, collars can be easily exchange. The polishing apparatus comprises: an outer pin gear having an inner gear section; an inner pin gear having an outer gear section; and a carrier having outer gear teeth, which are engaged with the inner gear section of the outer pin gear and the outer gear section of the inner pin gear so as to rotate and move the carrier around the inner pin gear. At least one of the inner gear section and the outer gear section includes gear teeth, each of which comprises: a pin proper being fixed to a pin ring and extended upward therefrom; a cylindrical collar rotatably covering and fitting the pin proper at a fitting section.
    • 在本发明的抛光装置中,可以容易地更换套环。 抛光装置包括:具有内齿轮部分的外销齿轮; 具有外齿轮部分的内销齿轮; 以及具有外齿轮齿轮的载体,其与外销齿轮的内齿轮部分和内销齿轮的外齿轮部分接合,以使托架围绕内销齿轮旋转和移动。 内齿轮部分和外齿轮部分中的至少一个包括齿轮齿,每个齿轮齿包括:销固定到销环并从其向上延伸的销; 一个圆柱形轴环可旋转地覆盖并适配在适配部分处的销。