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1. 发明授权

US06653313B2 1,4-dihydropyridine compounds as bradykinin antagonists 失效
标题翻译： 1,4-二氢吡啶化合物作为缓激肽拮抗剂
公开(公告)号：US06653313B2
公开(公告)日：2003-11-25
申请号：US09903157
申请日：2001-07-11
申请人： Mitsuhiro Kawamura , Makoto Kawai , Yuji Shishido , Tomoki Kato , Yasuhiro Katsu , Takafumi Ikeda , Noriaki Murase
发明人： Mitsuhiro Kawamura , Makoto Kawai , Yuji Shishido , Tomoki Kato , Yasuhiro Katsu , Takafumi Ikeda , Noriaki Murase
IPC分类号： A61K31496
CPC分类号： A61K31/46 , A61K31/496 , C07D451/04 , Y02A50/411
摘要： The present invention relates to compounds of the formula wherein each A is independently halo; Y is —(CH2)m—, —C(O)— or —S(O)—; R1 and R2 are independently C1-4 alkyl; R3 is substituted azacycloalkyl etc.; R4 is phenyl substituted at the 2-position with a substituent selected from substituted C1-7 alkyl, substituted C1-7 alkoxy, amine, etc; R5 is hydrogen or C1-4 alkyl; m is 0, 1 or 2; and n is 0, 1, 2, 3, 4 or 5. The present invention also relates to pharmaceutical compositions containing such compounds and to the use of such compounds in the treatment and prevention of inflammation, asthma, allergic rhinitis, pain and other disorders.
摘要翻译：本发明涉及各种化合物，每个A独立地是卤素; Y是 - （CH 2）m - ， - C（O） - 或-S（O） - ; R 1和R 2独立地是C 1-4烷基; R 3是取代的氮杂环烷基等; R 4是在2-位上被取代基取代的C 1-7烷基，取代的C 1-7烷氧基，胺等取代的苯基; R 5是氢或C 1-4烷基; m为0,1或2; 本发明还涉及含有这些化合物的药物组合物以及这些化合物在治疗和预防炎症，哮喘，变应性鼻炎，疼痛和其它疾病中的用途。

2. 发明授权

US06734306B2 N-benzenesulfonyl L-proline compounds as bradykinin antagonists 失效
标题翻译： N-苯磺酰基L-脯氨酸化合物作为缓激肽拮抗剂
公开(公告)号：US06734306B2
公开(公告)日：2004-05-11
申请号：US10010863
申请日：2001-12-05
申请人： Yasuhiro Katsu , Makoto Kawai , Hiroki Koike , Seiji Nukui
发明人： Yasuhiro Katsu , Makoto Kawai , Hiroki Koike , Seiji Nukui
IPC分类号： C07D40114
CPC分类号： C07D451/02 , C07D401/12 , C07D401/14 , C07D451/04 , C07D453/02 , C07D487/08
摘要： This invention provides a compound of the formula (I): or the pharmaceutically acceptable salts thereof wherein X1 and X2 are halo; R1 and R2 are independently hydrogen or C1-4 alkyl; R3 and R4 are each hydrogen or halo; and R5 is (a) —C3-9 diazacycloalkyl optionally substituted with C5-11 azabicycloalkyl; (b) —C3-9 azacycloalkyl-NH—(C5-11 azabicycloalkyl optionally substituted with C1-4 alkyl); (c) —NH—C1-3 alkyl-C(O)—C5-11 diazabicycloalkyl; (d) —NH—C1-3 alkyl-C(O)—NH—C5-11 azabicycloalkyl, the C5-11 azabicycloalkyl being optionally substituted with C1-4 alkyl; (e) —C3-9 azacycloalkyl optionally substituted with C3-9 azacycloalkyl; or (f) —NH—C1-5 alkyl-NH—C(O)—C4-9 cycloalkyl-NH2. These compounds are useful for the treatment of medical conditions mediated by bradykinin such as inflammation, allergic rhinitis, pain, etc. This invention also provides a pharmaceutical composition comprising the above compound.
摘要翻译：本发明提供式（I）化合物或其药学上可接受的盐，其中X 1和X 2为卤素; R 1和R 2独立地是氢或C 1-4烷基; R 3和R 4各自为氢或卤素; （b）-C3-9氮杂环烷基-NH-（任选被C 1-4烷基取代的C 5-10氮杂双环烷基）;（c）-C（= NH-C 1-3烷基-C（O）-C 5-11二氮杂双环烷基;（d）-NH-C 1-3烷基-C（O）-NH-C 5-11氮杂双环烷基，C 5-11氮杂双环烷基任选被C 1 -4-烷基;（e）任选被C 3-9氮杂环烷基取代的-C3-9氮杂环烷基; 或（f）-NH-C 1-5烷基-NH-C（O）-C 4-9环烷基-NH 2。这些化合物可用于治疗由缓激肽介导的医学病症如炎症，过敏性鼻炎，疼痛等。本发明还提供了包含上述化合物的药物组合物。

3. 发明申请

US20070167452A1 Therapeutic amide derivatives 审中-公开
标题翻译：治疗酰胺衍生物
公开(公告)号：US20070167452A1
公开(公告)日：2007-07-19
申请号：US10597868
申请日：2005-02-01
申请人： Makoto Kawai , Mitsuhiro Kawamura , Asato Morita , Isao Sakurada
发明人： Makoto Kawai , Mitsuhiro Kawamura , Asato Morita , Isao Sakurada
IPC分类号： A61K31/53 , A61K31/513 , A61K31/452 , A61K31/4433 , A61K31/428 , A61K31/423 , A61K31/165
CPC分类号： C07C235/48 , C07C2601/14 , C07D207/34 , C07D209/34 , C07D213/64 , C07D213/81 , C07D213/82 , C07D215/227 , C07D215/48 , C07D231/14 , C07D231/56 , C07D233/90 , C07D235/26 , C07D237/04 , C07D237/24 , C07D249/04 , C07D263/38 , C07D277/68 , C07D303/22 , C07D309/06 , C07D317/72 , C07D401/12 , C07D405/06 , C07D405/12
摘要： The present invention relates to compounds of the formula (I): or a pharmaceutically acceptable salt or solvate thereof, to processes for the preparation of, intermediates used in the preparation of, compositions containing such compounds and the uses of such compounds as antagonists of the NMDA NR2B receptor.
摘要翻译：本发明涉及式（I）化合物或其药学上可接受的盐或溶剂化物，用于制备用于制备含有这些化合物的组合物的中间体的方法，以及这些化合物作为 NMDA NR2B受体。

4. 发明授权

US08835461B2 Substituted 3-hydroxy-4-pyridone derivative 有权
标题翻译：取代的3-羟基-4-吡啶酮衍生物
公开(公告)号：US08835461B2
公开(公告)日：2014-09-16
申请号：US13259956
申请日：2010-03-23
申请人： Toshio Fujishita , Minako Mikamiyama , Makoto Kawai , Toshiyuki Akiyama
发明人： Toshio Fujishita , Minako Mikamiyama , Makoto Kawai , Toshiyuki Akiyama
IPC分类号： A61K31/497 , A61K31/44 , A61K31/445 , C07D413/02 , C07D401/02 , C07D239/02 , C07D403/02 , C07D471/02 , C07D417/02 , C07D413/00 , C07D215/00 , C07D409/12
CPC分类号： C07D413/06 , A61K9/0019 , A61K9/1652 , A61K9/2054 , C07D213/80 , C07D401/04 , C07D401/06 , C07D401/08 , C07D401/10 , C07D401/12 , C07D405/06 , C07D405/08 , C07D405/10 , C07D409/06 , C07D409/08 , C07D409/10 , C07D409/14 , C07D413/08 , C07D413/14 , C07D417/06 , C07D417/08 , C07D417/14 , C07D471/04
摘要： This invention provides compounds having antiviral activities especially inhibiting activity for influenza virus, more preferably provides substituted 3-hydroxy-4-pyridone derivatives having cap-dependent endonuclease inhibitory activity.
摘要翻译：本发明提供具有抗病毒活性的化合物，特别是抑制流感病毒的活性，更优选提供具有cap依赖性内切核酸酶抑制活性的取代的3-羟基-4-吡啶酮衍生物。

5. 发明授权

US08268700B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08268700B2
公开(公告)日：2012-09-18
申请号：US12153160
申请日：2008-05-14
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.
摘要翻译：公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。并且基于化学机械抛光将SOI层的表面抛光10至50nm。可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

6. 发明申请

US20120184734A1 SUBSTITUTED POLYCYCLIC CARBAMOYLPYRIDONE DERIVATIVE 有权
标题翻译：取代的多环碳酰胺衍生物
公开(公告)号：US20120184734A1
公开(公告)日：2012-07-19
申请号：US13378334
申请日：2010-06-14
申请人： Toshiyuki Akiyama , Kenji Takaya , Makoto Kawai , Yoshiyuki Taoda , Minako Mikamiyama , Kenji Morimoto , Chika Kageyama , Kenji Tomita , Hidenori Mikamiyama , Naoyuki Suzuki
发明人： Toshiyuki Akiyama , Kenji Takaya , Makoto Kawai , Yoshiyuki Taoda , Minako Mikamiyama , Kenji Morimoto , Chika Kageyama , Kenji Tomita , Hidenori Mikamiyama , Naoyuki Suzuki
IPC分类号： C07D498/14 , C07D471/14 , C07D471/04
CPC分类号： C07D471/04 , A61K31/53 , C07D471/14 , C07D487/14 , C07D487/20 , C07D498/14
摘要： This invention provides compounds having antiviral activities especially inhibiting activity for influenza virus, more preferably provides substituted 3-hydroxy-4-pyridone derivatives having cap-dependent endonuclease inhibitory activity.
摘要翻译：本发明提供具有抗病毒活性的化合物，特别是抑制流感病毒的活性，更优选提供具有cap依赖性内切核酸酶抑制活性的取代的3-羟基-4-吡啶酮衍生物。

7. 发明授权

US08057647B2 Electrode mounting structure of surface treatment apparatus 有权
标题翻译：表面处理装置的电极安装结构
公开(公告)号：US08057647B2
公开(公告)日：2011-11-15
申请号：US12490034
申请日：2009-06-23
申请人： Tomohiro Asou , Seiya Kunioka , Hitoshi Muramatsu , Nobuyuki Suzuki , Akira Ishibashi , Makoto Kawai
发明人： Tomohiro Asou , Seiya Kunioka , Hitoshi Muramatsu , Nobuyuki Suzuki , Akira Ishibashi , Makoto Kawai
IPC分类号： C25B9/02 , C25C7/02 , C25D17/06
CPC分类号： C25D5/34 , C25D7/04 , C25D17/12 , C25F3/02 , C25F7/00
摘要： An electrode mounting structure of a surface treatment apparatus in which a metal electrode is disposed so as to oppose to an inner-peripheral surface of a cylinder, the electrode and the cylinder are energized in a state where treatment liquid is interposed between the electrode and the cylinder inner-peripheral surface so as to perform pre-plating or plating to the cylinder inner-peripheral surface, and the metal electrode is detachably attached to a metal electrode holder member. The structure includes a resin coupler having a threaded portion engaged with a threaded portion formed on the electrode holder member.
摘要翻译：一种表面处理装置的电极安装结构，其中金属电极设置成与气缸的内周面相对设置，电极和气缸在处理液介于电极和电极之间的状态下通电气缸内周面，以便对气缸内周面进行预镀或电镀，并且金属电极可拆卸地安装在金属电极保持构件上。该结构包括树脂耦合器，其具有与形成在电极保持器构件上的螺纹部分接合的螺纹部分。

8. 发明授权

US08030118B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
公开(公告)号：US08030118B2
公开(公告)日：2011-10-04
申请号：US11976021
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/068 , H01L31/022466 , H01L31/1884 , H01L31/1896 , Y02B10/10 , Y02E10/547
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent electroconductive adhesive while using the ion implanting surface as a bonding surface; curing and maturing the transparent electroconductive adhesive into a transparent electroconductive film; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate to leave a single crystal silicon layer; and forming a p-n junction in the single crystal silicon layer.

9. 发明申请

US20110104871A1 METHOD FOR MANUFACTURING BONDED SUBSTRATE 有权
标题翻译：制造粘结基板的方法
公开(公告)号：US20110104871A1
公开(公告)日：2011-05-05
申请号：US12934788
申请日：2009-04-10
申请人： Yuji Tobisaka , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Shoji Akiyama , Hiroshi Tamura
发明人： Yuji Tobisaka , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Shoji Akiyama , Hiroshi Tamura
IPC分类号： H01L21/762
CPC分类号： H01L21/187 , H01L21/76254
摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.
摘要翻译：提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

10. 发明授权

US07879175B2 Method for manufacturing pyrolytic boron nitride composite substrate 有权
标题翻译：制造热解氮化硼复合基板的方法
公开(公告)号：US07879175B2
公开(公告)日：2011-02-01
申请号：US12078276
申请日：2008-03-28
申请人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Yuuji Tobisaka , Shoji Akiyama
IPC分类号： B32B38/10
CPC分类号： H01L21/76254 , C23C14/48
摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.
摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理硅基板10，用于表面清洁或表面活化。经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从待转移的硅衬底的体积13。将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。

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