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1. 发明申请

US20060267011A1 Image display device and method for manufacturing the same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20060267011A1
公开(公告)日：2006-11-30
申请号：US11441021
申请日：2006-05-26
申请人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
发明人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
IPC分类号： H01L31/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10S438/949
摘要： Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. Further a second rapid thermal treatment is performed all over the panel so as to reduce defects in the crystal grains in a region PSI poly-crystallized by the aforementioned energy beam. Thus, a high-quality polycrystalline semiconductor thin film serving as TFTs for a high-performance circuit and having a high on-current, a low threshold value, a low variation and a sharp leading edge characteristic is obtained. Concurrently, the precursor semiconductor layer in the other region is poly-crystallized by the second rapid thermal treatment so as to obtain a low-quality polycrystalline semiconductor thin film serving as pixel circuit TFTs and having a low on-current and properties of a low leak current and a high withstand voltage due to its high resistance. Accordingly, it is possible to form polycrystalline semiconductor TFTs high in driving performance and TFTs having properties of a low leak current and a high withstand voltage concurrently on one and the same insulating substrate.
摘要翻译：用作为底涂层的绝缘层UCL的绝缘基板GLS上的前体半导体膜PCS中，仅配置构成高性能电路的TFT的区域，用第一能量束LSR照射多晶化，横向生长晶粒。此外，在整个面板上进行第二快速热处理，以便减少通过上述能量束多晶化的区域PSI中的晶粒的缺陷。因此，获得了用作高性能电路的TFT并具有高导通电流，低阈值，低变化和尖锐前沿特性的高质量多晶半导体薄膜。同时，通过第二快速热处理，另一区域中的前体半导体层被多晶化，以获得用作像素电路TFT的低品质多晶半导体薄膜，并且具有低导通电流和低泄漏性由于其高电阻，电流和高耐压。因此，可以在同一绝缘基板上同时形成具有高驱动性能的多晶半导体TFT和具有低漏电流和高耐受电压的特性的TFT。

2. 发明授权

US07384810B2 Image display device and method for manufacturing the same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US07384810B2
公开(公告)日：2008-06-10
申请号：US11441021
申请日：2006-05-26
申请人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
发明人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
IPC分类号： H01L21/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10S438/949
摘要： Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. Further a second rapid thermal treatment is performed all over the panel so as to reduce defects in the crystal grains in a region PSI poly-crystallized by the aforementioned energy beam. Thus, a high-quality polycrystalline semiconductor thin film serving as TFTs for a high-performance circuit and having a high on-current, a low threshold value, a low variation and a sharp leading edge characteristic is obtained. Concurrently, the precursor semiconductor layer in the other region is poly-crystallized by the second rapid thermal treatment so as to obtain a low-quality polycrystalline semiconductor thin film serving as pixel circuit TFTs and having a low on-current and properties of a low leak current and a high withstand voltage due to its high resistance. Accordingly, it is possible to form polycrystalline semiconductor TFTs high in driving performance and TFTs having properties of a low leak current and a high withstand voltage concurrently on one and the same insulating substrate.
摘要翻译：用作为底涂层的绝缘层UCL的绝缘基板GLS上的前体半导体膜PCS中，仅配置构成高性能电路的TFT的区域，用第一能量束LSR照射多晶化，横向生长晶粒。此外，在整个面板上进行第二快速热处理，以便减少通过上述能量束多晶化的区域PSI中的晶粒的缺陷。因此，获得了用作高性能电路的TFT并具有高导通电流，低阈值，低变化和尖锐前沿特性的高质量多晶半导体薄膜。同时，通过第二快速热处理，另一区域中的前体半导体层被多晶化，以获得用作像素电路TFT的低品质多晶半导体薄膜，并且具有低导通电流和低泄漏性由于其高电阻，电流和高耐压。因此，可以在同一绝缘基板上同时形成具有高驱动性能的多晶半导体TFT和具有低漏电流和高耐受电压的特性的TFT。

3. 发明申请

US20070155070A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070155070A1
公开(公告)日：2007-07-05
申请号：US11620154
申请日：2007-01-05
申请人： Kiyoshi OUCHI , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
发明人： Kiyoshi OUCHI , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
IPC分类号： H01L21/84
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.
摘要翻译：一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。当制造TFT时，该低电阻半导体层用于形成源极和漏极。由于C，N和O杂质降低了TFT的迁移率，所以使用多晶硅，其中污染物浓度满足以下条件：碳浓度<= 3×10 9 / >，氮浓度<= 5×10 17 cm -3，氧浓度<= 3×10 9 cm -3 -3 / 。

4. 发明授权

US07902003B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07902003B2
公开(公告)日：2011-03-08
申请号：US11620154
申请日：2007-01-05
申请人： Kiyoshi Ouchi , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
发明人： Kiyoshi Ouchi , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
IPC分类号： H01L21/84
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.
摘要翻译：一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。当制造TFT时，该低电阻半导体层用于形成源极和漏极。由于C，N和O杂质降低了TFT的迁移率，因此使用多晶硅，其中污染物浓度满足以下条件：碳浓度nlE 3×1019 cm -3，氮浓度NlE 5×1017 cm-3，和氧浓度nlE; 3×1019 cm-3。

5. 发明授权

US07666769B2 Method for fabricating image display device 有权
标题翻译：图像显示装置的制造方法
公开(公告)号：US07666769B2
公开(公告)日：2010-02-23
申请号：US11702576
申请日：2007-02-06
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
摘要翻译：提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。形成在设置在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光束扫描重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的离散重整区域。在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致电影。

6. 发明授权

US07456913B2 LCD with first and second circuit regions each with separately optimized transistor properties 有权
标题翻译： LCD具有第一和第二电路区域，每个具有单独优化的晶体管特性
公开(公告)号：US07456913B2
公开(公告)日：2008-11-25
申请号：US11878285
申请日：2007-07-23
申请人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
发明人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
IPC分类号： G02F1/136
CPC分类号： H01L27/1296 , G02F1/13624 , G02F1/136277 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78627
摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.
摘要翻译：大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。

7. 发明申请

US20070246709A1 THIN FILM SEMICONDUCTOR DEVICE 有权
标题翻译：薄膜半导体器件
公开(公告)号：US20070246709A1
公开(公告)日：2007-10-25
申请号：US11768588
申请日：2007-06-26
申请人： Shinya YAMAGUCHI , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
发明人： Shinya YAMAGUCHI , Mutsuko Hatano , Mitsuharu Tai , Sedng-Kee Park , Takeo Shiba
IPC分类号： H01L33/00 , H01L29/04
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/02675 , H01L21/02691 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.
摘要翻译：提供一种薄膜半导体器件，其包括绝缘衬底，形成在绝缘衬底上的Si薄膜，以及具有Si薄膜作为其沟道的晶体管。 Si薄膜包括其中布置有多个窄的矩形晶粒的多晶体。多晶的表面在其晶界处是平坦的。此外，Si薄膜的晶体边界的平均膜厚度在晶粒内平均膜厚度的90〜100％的范围内。

8. 发明授权

US06949452B2 Method for fabricating image display device 有权
公开(公告)号：US06949452B2
公开(公告)日：2005-09-27
申请号：US10602738
申请日：2003-06-25
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： G02F1/1362 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/00 , H01L21/82 , H01L21/26
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

9. 发明申请

US20120068287A1 Highly Sensitive Photo-Sensing Element and Photo-Sensing Device Using the Same 有权
标题翻译：高灵敏感光元件和使用它的感光元件
公开(公告)号：US20120068287A1
公开(公告)日：2012-03-22
申请号：US13236338
申请日：2011-09-19
申请人： Mitsuharu Tai , Hideo Sato , Mutsuko Hatano , Masayoshi Kinoshita
发明人： Mitsuharu Tai , Hideo Sato , Mutsuko Hatano , Masayoshi Kinoshita
IPC分类号： H01L31/0224
CPC分类号： H01L27/1214 , G09G2360/14 , H01L31/1136
摘要： According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo transistor is formed by using TFT, which comprises a first electrode 11 prepared on an insulating substrate 10, a photoelectric conversion region 14 and a second electrode 12, and a third electrode 13 disposed above the photoelectric conversion region 14. An impurity layer positioned closer to an intrinsic layer (density of active impurities is 1017 cm−3 or lower) is provided on the regions 15 and 16 on both sides under the third electrode 13 or on one of the regions 15 or 16 on one side.
摘要翻译：根据本发明，通过仅使用多晶材料，通过平面法在绝缘基板上制备高灵敏度的感光元件和传感器驱动电路。感光元件和传感器驱动电路都由多晶硅膜制成。作为感光元件，通过使用TFT形成光电晶体管，该TFT包括在绝缘基板10上制备的第一电极11，光电转换区域14和第二电极12以及设置在光电转换器之上的第三电极13 在第三电极13下方的区域15和16上，或者在区域15或16中的一个区域上设置位于更接近本征层（活性杂质的密度为1017cm-3或更低）的杂质层。在一边。

10. 发明申请

US20070262319A1 LCD with first and second circuit regions each with separately optimized transistor properties 有权
公开(公告)号：US20070262319A1
公开(公告)日：2007-11-15
申请号：US11878285
申请日：2007-07-23
申请人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
发明人： Mitsuharu Tai , Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Hideo Sato
IPC分类号： H01L29/04
CPC分类号： H01L27/1296 , G02F1/13624 , G02F1/136277 , H01L27/1285 , H01L29/04 , H01L29/78621 , H01L29/78627
摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

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