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1. 发明申请

US20150318357A1 SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：硅碳化硅半导体器件
公开(公告)号：US20150318357A1
公开(公告)日：2015-11-05
申请号：US14682970
申请日：2015-04-09
申请人： Mitsubishi Electric Corporation
发明人： Chihiro TADOKORO , Yoichiro TARUI , Koji OKUNO
IPC分类号： H01L29/16 , H01L29/06 , H01L29/872 , H01L29/47
CPC分类号： H01L29/1608 , H01L21/0495 , H01L29/0611 , H01L29/0619 , H01L29/401 , H01L29/402 , H01L29/47 , H01L29/6606 , H01L29/872
摘要： A silicon carbide semiconductor device includes: a silicon carbide semiconductor layer of a first conductivity type; a field insulating film formed on a surface of the silicon carbide semiconductor layer; a Schottky electrode formed on the surface of the silicon carbide semiconductor layer on an inner periphery side relative to the field insulating film, the Schottky electrode being formed to overlap onto the field insulating film; a front-surface electrode that covers the Schottky electrode and extends on the field insulating film beyond a peripheral edge of the Schottky electrode; and a terminal well region of a second conductivity type that is formed to be in contact with a part of the Schottky electrode in an upper part of the silicon carbide semiconductor layer and extends in the silicon carbide semiconductor layer on an outer periphery side relative to a peripheral edge of the front-surface electrode.
摘要翻译：碳化硅半导体器件包括：第一导电类型的碳化硅半导体层; 形成在所述碳化硅半导体层的表面上的场绝缘膜; 形成在相对于场绝缘膜的内周侧的碳化硅半导体层的表面上的肖特基电极，肖特基电极形成为与场绝缘膜重叠; 覆盖所述肖特基电极并在所述场绝缘膜上延伸超过所述肖特基电极的外围边缘的前表面电极; 以及第二导电类型的端子阱区，其形成为与碳化硅半导体层的上部中的肖特基电极的一部分接触，并且相对于碳化硅半导体层的外周侧在碳化硅半导体层中延伸前表面电极的外围边缘。

2. 发明申请

US20230137754A1 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR CHIP 有权
公开(公告)号：US20230137754A1
公开(公告)日：2023-05-04
申请号：US17821616
申请日：2022-08-23
申请人： Mitsubishi Electric Corporation
发明人： Chihiro TADOKORO
IPC分类号： H01L21/78 , H01L23/544
摘要： Provided is a method of manufacturing a silicon carbide semiconductor device that suppresses the crawling up of a bonding material to the side surfaces of a chip, thereby suppressing a decrease in productivity. In the method of manufacturing the silicon carbide semiconductor device, the method includes, preparing a semiconductor wafer, forming semiconductor elements on the semiconductor wafer, forming a trench, which has a bottom having a roundness, on one main surface of the semiconductor wafer, and performing dicing at a position of the trench having the bottom having the roundness thereby separating the semiconductor elements into individual pieces.

3. 发明申请

US20190115217A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190115217A1
公开(公告)日：2019-04-18
申请号：US16075158
申请日：2016-07-04
申请人： Mitsubishi Electric Corporation
发明人： Yasushi TAKAKI , Eisuke SUEKAWA , Chihiro TADOKORO
IPC分类号： H01L21/28 , H01L21/205 , H01L49/02 , H01L21/02 , H01L21/225
摘要： Polysilicon films (P1,P2) are simultaneously formed on a wafer (W1) and a monitor wafer (W2) under the same growth condition in a wafer process. At least one of a film thickness and phosphorus concentration of the polysilicon film (P2) formed on the monitor wafer (W2) is measured to obtain a measured value. One of a plurality of mask patterns (A,B,C) is selected based on the measured value. The polysilicon film (P1) formed on the wafer (W1) is etched using the selected mask pattern to form the polysilicon resistor (5).

4. 发明申请

US20180337175A1 SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180337175A1
公开(公告)日：2018-11-22
申请号：US15777674
申请日：2016-01-05
申请人： Mitsubishi Electric Corporation
发明人： Chihiro TADOKORO , Kensuke TAGUCHI
IPC分类号： H01L27/08 , H01L29/16 , H01L29/06 , H01L29/872
CPC分类号： H01L27/0814 , H01L29/0619 , H01L29/0634 , H01L29/1608 , H01L29/872
摘要： A silicon carbide substrate is provided with a first surface and a second surface opposite the first surface. The silicon carbide substrate includes an n-type region connecting the first surface and the second surface, and a p-type region being in contact with the first surface and connecting the first surface and the second surface. A first anode electrode is Schottky-joined, on the first surface, to the n-type region. A first cathode electrode is ohmically joined, on the second surface, to the n-type region. A second anode electrode is ohmically joined, on the first surface, to the p-type region. A second cathode electrode is Schottky-joined, on the second surface, to the p-type region.

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