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1. 发明申请

US20040029390A1 Method for evaluating a crystalline semiconductor substrate 有权
标题翻译：用于评估晶体半导体衬底的方法
公开(公告)号：US20040029390A1
公开(公告)日：2004-02-12
申请号：US10347412
申请日：2003-01-21
申请人： Mitsubishi Denki Kabushiki Kaisha
发明人： Yoshitsugu Yamamoto , Satoshi Suzuki , Ryo Hattori
IPC分类号： G01R027/08
CPC分类号： G01R31/2608
摘要： In a method for evaluating a semiconductor crystal substrate which includes a collector layer, a base layer, and an emitter layer and is used for a heterojunction bipolar transistor, a semiconductor crystal substrate to be evaluated which includes a crystal layer whose composition is the same as that of the base layer is produced. Excitation light is irradiated to the semiconductor crystal substrate to be evaluated and a change with time in an intensity of photoluminescence from the crystal layer is measured before the intensity becomes saturated. A change with time in a current gain of the heterojunction bipolar transistor produced using the semiconductor crystal substrate is measured based on the change with time in the intensity.
摘要翻译：在用于评估包含集电极层，基极层和发射极层并用于异质结双极晶体管的半导体晶体衬底的方法中，要评估的半导体晶体衬底包括其组成相同的晶体层产生基层的。激发光照射到要评估的半导体晶体基板上，并且在强度饱和之前测量来自晶体层的光致发光强度随时间的变化。基于强度随时间的变化来测量使用半导体晶体基板产生的异质结双极晶体管的电流增益随时间的变化。

2. 发明申请

US20040155194A1 Method for evaluating piezoelectric fields 失效
标题翻译：压电场评估方法
公开(公告)号：US20040155194A1
公开(公告)日：2004-08-12
申请号：US10768163
申请日：2004-02-02
申请人： Mitsubishi Denki Kabushiki Kaisha
发明人： Hideo Takeuchi , Yoshitsugu Yamamoto , Takahide Ishikawa
IPC分类号： G01R029/22
CPC分类号： G01N21/35
摘要： In a method of evaluating a piezoelectric field, a non-destructive spectrometry of piezoelectric fields is performed in a semiconductor heterojunction using a technique different from PR spectroscopy. In the method, at first, first and second absorption spectra are measured by irradiating infrared light to a sample with first and second angles, respectively. Then, a peak position of an absorption band having incident-angle dependent intensity is specified based on the first and second absorption spectra. Thus, the piezoelectric field strength is obtained based on an equation of energy level. The equation represents a relationship between the piezoelectric field and an electron energy level corresponding to the peak position.
摘要翻译：在评估压电场的方法中，使用不同于PR光谱的技术在半导体异质结中进行压电场的非破坏性光谱测定。在该方法中，首先，通过将红外光分别以第一和第二角度照射到样品来测量第一和第二吸收光谱。然后，基于第一吸收光谱和第二吸收光谱来确定具有入射角依赖强度的吸收带的峰值位置。因此，基于能级方程获得压电场强。该方程式表示压电场与对应于峰值位置的电子能级之间的关系。

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