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    • 5. 发明授权
    • Boundary acoustic wave device having three-medium structure
    • 具有三介质结构的边界声波装置
    • US08179017B2
    • 2012-05-15
    • US13172966
    • 2011-06-30
    • Takashi Yamane
    • Takashi Yamane
    • H03H9/25H01L41/08
    • H03H9/0222H03H9/02559
    • A boundary acoustic wave device that has a three-medium structure and that prevents a high-order mode spurious response includes a piezoelectric substrate, a first dielectric layer laminated on the piezoelectric substrate, a second dielectric layer laminated on the first dielectric layer, and an IDT electrode provided at an interface between the piezoelectric substrate and the first dielectric layer. The boundary acoustic wave device utilizes a Stoneley wave that propagates along the interface. Where V1 denotes an acoustic velocity of a slow transversal bulk wave in the piezoelectric substrate and Va denotes an acoustic velocity at an anti-resonant point in a high-order mode of the Stoneley wave, Va>V1 is satisfied.
    • 具有三介质结构并且防止高阶模式杂散响应的弹性边界波装置包括压电基片,层压在压电基片上的第一电介质层,层叠在第一介电层上的第二电介质层和 IDT电极设置在压电基板和第一介电层之间的界面处。 边界声波装置利用沿着界面传播的斯通利波。 其中V1表示压电衬底中的慢横向体波的声速,Va表示在斯通利波的高阶模式下的反谐振点处的声速,满足Va> V1。
    • 7. 发明授权
    • Boundary acoustic wave device
    • 边界声波装置
    • US08436510B2
    • 2013-05-07
    • US12913847
    • 2010-10-28
    • Takashi YamaneTakeshi Nakao
    • Takashi YamaneTakeshi Nakao
    • H01L41/083
    • H01L41/18H03H9/0222H03H9/02559H03H9/02574
    • A boundary acoustic wave device includes a piezoelectric substrate made of single-crystalline LiTaO3, a first medium layer disposed on the piezoelectric substrate and made of a dielectric, a second medium layer disposed on the first medium layer and made of a dielectric having a sound velocity different from that of the first medium layer, and at least one interdigital electrode disposed at the boundary between the piezoelectric substrate and the first medium layer. The sound velocity of the first medium layer is less than the sound velocity of LiTaO3. The sound velocity of the second medium layer is greater than the sound velocity of LiTaO3. The inequality (h/λ)×a≦0.05 is satisfied, where H is the thickness of the first medium layer, h is the thickness of the interdigital electrode, λ is the period of electrode fingers of the interdigital electrode, and a is the ratio of the density of a metal of the interdigital electrode to the density of Au.
    • 声界面波装置包括由单晶LiTaO 3构成的压电基板,设在压电基板上的第一介质层,由电介质构成,第二介质层设置在第一介质层上,由具有声速 与第一介质层的不同,以及设置在压电基板和第一介质层之间的边界处的至少一个叉指电极。 第一介质层的声速小于LiTaO3的声速。 第二介质层的声速大于LiTaO3的声速。 满足不等式(h/lambda),a@0.05),其中H是第一介质层的厚度,h是叉指电极的厚度,λ是叉指电极的电极指的周期,a是 指数电极的金属密度与Au的密度之比。