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    • 2. 发明申请
    • METHOD OF PROGRAMMING MEMORY CELLS AND READING DATA, MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS USING THE SAME
    • 编程存储器单元和读取数据的方法,使用其的存储器控​​制器和存储器存储装置
    • US20130246732A1
    • 2013-09-19
    • US13528840
    • 2012-06-21
    • Kian-Fui SengMing-Hui TsengChing-Hsien Wang
    • Kian-Fui SengMing-Hui TsengChing-Hsien Wang
    • G06F12/02G06F12/14
    • G06F12/0246G06F2212/7201G06F2212/7209
    • A method of programming memory cells for a rewritable non-volatile memory module is provided. The method includes: receiving a command which indicates performing an update operation to a logical page; and identifying valid logical access addresses and invalid logical access addresses in the logical page according to the command. The method also includes: selecting a physical page; setting flags corresponding to the valid logical access addresses in a valid state, setting flags corresponding to the invalid logical access in an invalid state; programming the flags and data belonging to the valid logical access addresses to the selected physical page based on the update operation; and mapping the selected physical page to the logical page. Accordingly, the method can effectively increase the speed of programming the memory cells.
    • 提供了一种用于可重写非易失性存储器模块的存储单元的编程方法。 该方法包括:接收指示对逻辑页执行更新操作的命令; 并根据该命令在逻辑页面中识别有效的逻辑访问地址和无效的逻辑访问地址。 该方法还包括:选择物理页面; 将与有效逻辑访问地址相对应的标志设置为有效状态,将与无效逻辑访问相对应的标志设置为无效状态; 基于更新操作将属于有效逻辑访问地址的标志和数据编程到所选择的物理页面; 并将所选择的物理页面映射到逻辑页面。 因此,该方法可以有效地提高对存储器单元的编程速度。
    • 5. 发明授权
    • Method of programming memory cells and reading data, memory controller and memory storage apparatus using the same
    • 编程存储单元和读取数据的方法,存储器控制器和使用其的存储器存储装置
    • US09037782B2
    • 2015-05-19
    • US13528840
    • 2012-06-21
    • Kian-Fui SengMing-Hui TsengChing-Hsien Wang
    • Kian-Fui SengMing-Hui TsengChing-Hsien Wang
    • G06F12/00G06F12/02
    • G06F12/0246G06F2212/7201G06F2212/7209
    • A method of programming memory cells for a rewritable non-volatile memory module is provided. The method includes: receiving a command which indicates performing an update operation to a logical page; and identifying valid logical access addresses and invalid logical access addresses in the logical page according to the command. The method also includes: selecting a physical page; setting flags corresponding to the valid logical access addresses in a valid state, setting flags corresponding to the invalid logical access in an invalid state; programming the flags and data belonging to the valid logical access addresses to the selected physical page based on the update operation; and mapping the selected physical page to the logical page. Accordingly, the method can effectively increase the speed of programming the memory cells.
    • 提供了一种用于可重写非易失性存储器模块的存储单元的编程方法。 该方法包括:接收指示对逻辑页执行更新操作的命令; 并根据该命令在逻辑页面中识别有效的逻辑访问地址和无效的逻辑访问地址。 该方法还包括:选择物理页面; 将与有效逻辑访问地址相对应的标志设置为有效状态,将与无效逻辑访问相对应的标志设置为无效状态; 基于更新操作将属于有效逻辑访问地址的标志和数据编程到所选择的物理页面; 并将所选择的物理页面映射到逻辑页面。 因此,该方法可以有效地提高对存储器单元的编程速度。