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1. 发明申请

US20130246732A1 METHOD OF PROGRAMMING MEMORY CELLS AND READING DATA, MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS USING THE SAME 有权
标题翻译：编程存储器单元和读取数据的方法，使用其的存储器控制器和存储器存储装置
公开(公告)号：US20130246732A1
公开(公告)日：2013-09-19
申请号：US13528840
申请日：2012-06-21
申请人： Kian-Fui Seng , Ming-Hui Tseng , Ching-Hsien Wang
发明人： Kian-Fui Seng , Ming-Hui Tseng , Ching-Hsien Wang
IPC分类号： G06F12/02 , G06F12/14
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7209
摘要： A method of programming memory cells for a rewritable non-volatile memory module is provided. The method includes: receiving a command which indicates performing an update operation to a logical page; and identifying valid logical access addresses and invalid logical access addresses in the logical page according to the command. The method also includes: selecting a physical page; setting flags corresponding to the valid logical access addresses in a valid state, setting flags corresponding to the invalid logical access in an invalid state; programming the flags and data belonging to the valid logical access addresses to the selected physical page based on the update operation; and mapping the selected physical page to the logical page. Accordingly, the method can effectively increase the speed of programming the memory cells.
摘要翻译：提供了一种用于可重写非易失性存储器模块的存储单元的编程方法。该方法包括：接收指示对逻辑页执行更新操作的命令; 并根据该命令在逻辑页面中识别有效的逻辑访问地址和无效的逻辑访问地址。该方法还包括：选择物理页面; 将与有效逻辑访问地址相对应的标志设置为有效状态，将与无效逻辑访问相对应的标志设置为无效状态; 基于更新操作将属于有效逻辑访问地址的标志和数据编程到所选择的物理页面; 并将所选择的物理页面映射到逻辑页面。因此，该方法可以有效地提高对存储器单元的编程速度。

2. 发明授权

US08086787B2 Wear leveling method, and storage system and controller using the same 有权
标题翻译：磨损均衡法，存储系统和控制器使用相同
公开(公告)号：US08086787B2
公开(公告)日：2011-12-27
申请号：US12265973
申请日：2008-11-06
申请人： Ruei-Cian Chen , Chih-Kang Yeh , Kian-Fui Seng
发明人： Ruei-Cian Chen , Chih-Kang Yeh , Kian-Fui Seng
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A wear leveling method for a flash is provided, wherein the flash memory includes a plurality of physical blocks grouped into at least a data area and a spare area. The method includes setting a first predetermined threshold value as a wear-leveling start value and randomly generating a random number as a memory erased count, wherein the random number is smaller than the wear-leveling start value. The method also includes counting the memory erased count each time when the physical blocks are erased and determining whether the memory erased count is smaller than the wear-leveling start value, wherein a physical blocks switching is performed between the data area and the spare area when the memory erased count is not smaller then the wear-leveling start value. Accordingly, it is possible to uniformly use the physical blocks, so as to effectively prolong a lifetime of the store system.
摘要翻译：提供了一种用于闪存的磨损均衡方法，其中闪速存储器包括分组为至少数据区域和备用区域的多个物理块。该方法包括将第一预定阈值设置为磨损均衡开始值，并随机生成随机数作为存储器擦除计数，其中随机数小于磨损均衡开始值。该方法还包括每当擦除物理块时对存储器擦除计数进行计数，并确定存储器擦除计数是否小于磨损均衡开始值，其中在数据区和备用区之间执行物理块切换，当内存擦除计数不小于磨损均衡开始值。因此，可以均匀地使用物理块，以便有效地延长存储系统的寿命。

3. 发明申请

US20100057979A1 DATA TRANSMISSION METHOD FOR FLASH MEMORY AND FLASH MEMORY STORAGE SYSTEM AND CONTROLLER USING THE SAME 审中-公开
标题翻译：用于闪速存储器和闪速存储器存储系统的数据传输方法和使用该存储器的控制器
公开(公告)号：US20100057979A1
公开(公告)日：2010-03-04
申请号：US12327078
申请日：2008-12-03
申请人： Chien-Hua Chu , Chih-Kang Yeh , Ruei-Cian Chen , Kian-Fui Seng
发明人： Chien-Hua Chu , Chih-Kang Yeh , Ruei-Cian Chen , Kian-Fui Seng
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G06F12/0246 , G06F12/0607 , G06F2212/7203 , G06F2212/7208
摘要： A data transmission method suitable for transmitting data from a cache to a plurality of flash memory groups through a single data bus in a flash memory storage system is provided. The data transmission method includes sequentially sorting and grouping data to be written at continuous logical addresses in the cache in unit of logical blocks. The data transmission method further includes respectively transmitting the grouped sector data into the flash memory groups through the data bus in an interleaving manner, wherein data in the same logical block is transmitted and written into physical blocks of the same flash memory group. Thereby, the data is prevented from being written into different physical blocks, and accordingly the lifespan of the flash memory storage system is prolonged.
摘要翻译：提供一种适用于通过闪存存储系统中的单个数据总线将数据从高速缓存发送到多个闪存组的数据传输方法。数据传输方法包括以逻辑块为单位顺序排列和分组要在缓存中的连续逻辑地址处写入的数据。数据传输方法还包括以交错方式通过数据总线分别将分组的扇区数据发送到闪存组，其中同一逻辑块中的数据被发送并写入同一闪存组的物理块。因此，防止数据被写入不同的物理块，从而延长闪存存储系统的寿命。

4. 发明授权

US09037782B2 Method of programming memory cells and reading data, memory controller and memory storage apparatus using the same 有权
标题翻译：编程存储单元和读取数据的方法，存储器控制器和使用其的存储器存储装置
公开(公告)号：US09037782B2
公开(公告)日：2015-05-19
申请号：US13528840
申请日：2012-06-21
申请人： Kian-Fui Seng , Ming-Hui Tseng , Ching-Hsien Wang
发明人： Kian-Fui Seng , Ming-Hui Tseng , Ching-Hsien Wang
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7209
摘要： A method of programming memory cells for a rewritable non-volatile memory module is provided. The method includes: receiving a command which indicates performing an update operation to a logical page; and identifying valid logical access addresses and invalid logical access addresses in the logical page according to the command. The method also includes: selecting a physical page; setting flags corresponding to the valid logical access addresses in a valid state, setting flags corresponding to the invalid logical access in an invalid state; programming the flags and data belonging to the valid logical access addresses to the selected physical page based on the update operation; and mapping the selected physical page to the logical page. Accordingly, the method can effectively increase the speed of programming the memory cells.
摘要翻译：提供了一种用于可重写非易失性存储器模块的存储单元的编程方法。该方法包括：接收指示对逻辑页执行更新操作的命令; 并根据该命令在逻辑页面中识别有效的逻辑访问地址和无效的逻辑访问地址。该方法还包括：选择物理页面; 将与有效逻辑访问地址相对应的标志设置为有效状态，将与无效逻辑访问相对应的标志设置为无效状态; 基于更新操作将属于有效逻辑访问地址的标志和数据编程到所选择的物理页面; 并将所选择的物理页面映射到逻辑页面。因此，该方法可以有效地提高对存储器单元的编程速度。

5. 发明申请

US20100023675A1 WEAR LEVELING METHOD, AND STORAGE SYSTEM AND CONTROLLER USING THE SAME 有权
标题翻译：磨损方法，存储系统和使用它的控制器
公开(公告)号：US20100023675A1
公开(公告)日：2010-01-28
申请号：US12265973
申请日：2008-11-06
申请人： RUEI-CIAN CHEN , Chih-Kang Yeh , Kian-Fui Seng
发明人： RUEI-CIAN CHEN , Chih-Kang Yeh , Kian-Fui Seng
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7211
摘要： A wear leveling method for a flash is provided, wherein the flash memory includes a plurality of physical blocks grouped into at least a data area and a spare area. The method includes setting a first predetermined threshold value as a wear-leveling start value and randomly generating a random number as a memory erased count, wherein the random number is smaller than the wear-leveling start value. The method also includes counting the memory erased count each time when the physical blocks are erased and determining whether the memory erased count is smaller than the wear-leveling start value, wherein a physical blocks switching is performed between the data area and the spare area when the memory erased count is not smaller then the wear-leveling start value. Accordingly, it is possible to uniformly use the physical blocks, so as to effectively prolong a lifetime of the store system.
摘要翻译：提供了一种用于闪存的磨损均衡方法，其中闪速存储器包括分组为至少数据区域和备用区域的多个物理块。该方法包括将第一预定阈值设置为磨损均衡开始值，并随机生成随机数作为存储器擦除计数，其中随机数小于磨损均衡开始值。该方法还包括每当擦除物理块时对存储器擦除计数进行计数，并确定存储器擦除计数是否小于磨损均衡开始值，其中在数据区和备用区之间执行物理块切换，当内存擦除计数不小于磨损均衡开始值。因此，可以均匀地使用物理块，以便有效地延长存储系统的寿命。

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