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1. 发明申请

US20050056827A1 CMOS compatible low band offset double barrier resonant tunneling diode 审中-公开
标题翻译： CMOS兼容低带偏移双阻挡谐振隧穿二极管
公开(公告)号：US20050056827A1
公开(公告)日：2005-03-17
申请号：US10767275
申请日：2004-01-29
申请人： Ming Li , Jagar Singh , Yong Hou , Narayanan Balasubramanian , Fujiang Lin
发明人： Ming Li , Jagar Singh , Yong Hou , Narayanan Balasubramanian , Fujiang Lin
IPC分类号： G11C5/14 , H01L27/06 , H01L29/88 , H01L29/06
CPC分类号： B82Y10/00 , G11C5/142 , H01L27/0629 , H01L29/785 , H01L29/882
摘要： Three configurations of double barrier resonant tunneling diodes (RTD) are provided along with methods of their fabrication. The tunneling barrier layers of the diode are formed of low band offset dielectric materials and produce a diode with good I-V characteristics including negative differential resistance (NDR) with good peak-to-valley ratios (PVR). Fabrication methods of the RTD start with silicon-on-insulator substrates (SOI), producing silicon quantum wells, and are, therefore, compatible with main stream CMOS technologies such as those applied to SOI double gate transistor fabrication. Alternatively, Ge-on-insulator or SiGe-on-insulator substrates can be used if the quantum well is to be formed of Ge or SiGe. The fabrication methods include the formation of both vertical and horizontal silicon quantum well layers. The vertically formed layer may be oriented so that its vertical sides are in any preferred crystallographic plane, such as the 100 or 110 planes.
摘要翻译：提供了双重屏障共振隧道二极管（RTD）的三种配置及其制造方法。二极管的隧道势垒层由低带偏移电介质材料形成，并产生具有良好I-V特性的二极管，包括具有良好峰谷比（PVR）的负差分电阻（NDR）。 RTD的制造方法从绝缘体上硅衬底（SOI）开始，产生硅量子阱，因此与诸如应用于SOI双栅晶体管制造的主流CMOS技术相兼容。或者，如果量子阱由Ge或SiGe形成，则可以使用绝缘体上的锗或绝缘体上硅衬底。制造方法包括垂直和水平硅量子阱层的形成。垂直形成的层可以被定向成使得其垂直边在任何优选的结晶平面中，例如100或110平面。

2. 发明授权

US06121809A Accurate and tuneable active differential phase splitters in RFIC wireless applications 有权
标题翻译： RFIC无线应用中精确和可调谐的有源差分相位分离器
公开(公告)号：US06121809A
公开(公告)日：2000-09-19
申请号：US270906
申请日：1999-03-15
申请人： Huainan Ma , Sher Jiun Fang , Fujiang Lin
发明人： Huainan Ma , Sher Jiun Fang , Fujiang Lin
IPC分类号： H03F3/26 , H03K5/151 , H03K5/13
CPC分类号： H03K5/151 , H03F3/265
摘要： A differential phase splitter circuit for producing opposite phase signals from an input AC signal is provided. A first and second transistor is provided. The source of these transistors are connected to a common first node. Further, these transistors act as a differential amplifier. The gate of the first transistor receives an input AC signal. The drain of the first transistor produces a first output AC signal. Similarly, the drain of the second transistor produces a second output AC signal that is 180 degrees out of phase with the first output AC signal. A source resistor is provided, connected in series to the common first node and ground. Lastly, an LCR feedback circuit is provided. This feedback circuit is connected between the drain of the first transistor and the gate of the second transistor. The LCR feedback circuit couples at least a fraction of the amplitude of the first output AC signal to the gate of the second transistor for amplitude balancing and phase balancing. This compensates for an unequal division of the input signal between the first and second transistor due to the finite impedance value of the source resistor. The LCR feedback circuit may include an active element for modifying the phase and amplitude balance of the two output AC signals. The active element may be adjusted using a control voltage.
摘要翻译：提供了用于从输入AC信号产生相反相位信号的差分相位分离器电路。提供第一和第二晶体管。这些晶体管的源极连接到公共第一节点。此外，这些晶体管用作差分放大器。第一晶体管的栅极接收输入AC信号。第一晶体管的漏极产生第一输出AC信号。类似地，第二晶体管的漏极产生与第一输出AC信号180度异相的第二输出AC信号。提供源电阻，串联连接到公共第一节点和地。最后，提供LCR反馈电路。该反馈电路连接在第一晶体管的漏极和第二晶体管的栅极之间。 LCR反馈电路将第一输出AC信号的幅度的至少一部分耦合到第二晶体管的栅极用于幅度平衡和相位平衡。这由于源极电阻的有限阻抗值而补偿了第一和第二晶体管之间的输入信号的不相等。 LCR反馈电路可以包括用于修改两个输出AC信号的相位和幅度平衡的有源元件。可以使用控制电压来调节有源元件。

3. 发明申请

US20150215042A1 MILLIMETER-WAVE WAVEGUIDE COMMUNICATION SYSTEM 有权
标题翻译：毫米波波形通信系统
公开(公告)号：US20150215042A1
公开(公告)日：2015-07-30
申请号：US14379998
申请日：2012-02-24
申请人： Daniel Guidotti , Qidong Wang , Fujiang Lin , Guang Zhu
发明人： Daniel Guidotti , Qidong Wang , Fujiang Lin , Guang Zhu
IPC分类号： H04B10/25 , H04B10/00
CPC分类号： H04B10/2503 , H04B10/12 , H04B10/90 , H05K1/0218 , H05K1/0239 , H05K2201/037 , H05K2201/0715 , H05K2201/10098
摘要： The present disclosure provides a millimeter-wave waveguide communication system. The millimeter-wave waveguide communication system may comprise: a clock component, and at least two sets of millimeter-wave receiving/transmitting channels. The clock component is configured to provide a clock signal to sending ends and receiving ends of the two sets of millimeter-wave receiving/sending channels respectively. Each set of millimeter-wave receiving/sending channels comprises: a transmitter component, a receiver component and a transmission waveguide. The transmission waveguide is located between the transmitter component and the receiver component and is configured to provide a channel for millimeter-wave transmission. The top face, side face and/or bottom face of the transmission waveguide, except for active devices and accessories thereof, are plated with a metal conductive wall to form an electromagnetic shield from a transmission waveguide in an adjacent millimeter-wave receiving/sending channel. The metal conductive wall can minimize the crosstalk between the channels during high-speed communications, thereby improving data bandwidth and data throughput of the millimeter-wave communication system.
摘要翻译：本公开提供了一种毫米波波导通信系统。毫米波波导通信系统可以包括：时钟分量和至少两组毫米波接收/发送信道。时钟分量被配置为提供时钟信号以分别发送两组毫米波接收/发送信道的端点和接收端。每组毫米波接收/发送通道包括：发射器部件，接收器部件和传输波导。传输波导位于发射器部件和接收器部件之间，并且被配置为提供用于毫米波传输的通道。除了有源器件及其附件之外，传输波导的顶面，侧面和/或底面镀有金属导电壁，以在相邻毫米波接收/发送通道中的传输波导形成电磁屏蔽。金属导电壁可以在高速通信期间最小化通道之间的串扰，从而提高毫米波通信系统的数据带宽和数据吞吐量。

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