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1. 发明授权

US06276207B1 Semiconductor physical quantity sensor having movable portion and fixed portion confronted each other and method of manufacturing the same 有权
标题翻译：具有可动部分和固定部分的半导体物理量传感器彼此面对并且其制造方法
公开(公告)号：US06276207B1
公开(公告)日：2001-08-21
申请号：US09438293
申请日：1999-11-12
申请人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
发明人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
IPC分类号： G01P1500
CPC分类号： B81C1/00928 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.
摘要翻译：一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。加速度传感器具有传感器部分和处理部分。传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。传感器部分通过沟槽与处理部分电绝缘。

2. 发明授权

US06199430B1 Acceleration sensor with ring-shaped movable electrode 有权
标题翻译：带环形可动电极的加速度传感器
公开(公告)号：US06199430B1
公开(公告)日：2001-03-13
申请号：US09241137
申请日：1999-02-02
申请人： Kazuhiko Kano , Koji Hattori , Yoshinori Ohtsuka , Makiko Sugiura , Minekazu Sakai , Inao Toyoda , Yasutoshi Suzuki , Seiichiro Ishio , Minoru Murata
发明人： Kazuhiko Kano , Koji Hattori , Yoshinori Ohtsuka , Makiko Sugiura , Minekazu Sakai , Inao Toyoda , Yasutoshi Suzuki , Seiichiro Ishio , Minoru Murata
IPC分类号： G01P15125
CPC分类号： B81B7/0006 , B81B2201/0235 , G01P15/0802 , G01P15/125 , G01P15/135 , G01P15/18 , G01P2015/0817 , G01P2015/0828 , G01V1/181 , H01H1/0036
摘要： An acceleration sensor has a ring-shaped movable electrode connected to an anchor part via beams and a fixed electrode facing the ring-shaped movable electrode defining a specific interval, which are disposed on a substrate. The movable electrode is displaced by acceleration approximately in parallel to the substrate and contacts the fixed electrode, so that the acceleration is detected. The fixed electrode is divided into a detecting fixed electrode for contacting the movable electrode and a sensitivity controlling fixed electrode insulated from the detecting fixed electrode. Accordingly, potential differences between the movable electrode and the detecting fixed electrode and between the movable electrode and the sensitivity controlling fixed electrode are independently controlled to control sensitivity of acceleration.
摘要翻译：加速度传感器具有环形可动电极，其经由梁和固定电极连接到锚定部分，固定电极面向限定特定间隔的环形可动电极，该固定电极设置在基板上。可移动电极通过与基板大致平行的加速移位，并与固定电极接触，从而检测加速度。固定电极被分成用于接触可动电极的检测固定电极和与检测固定电极绝缘的灵敏度控制固定电极。因此，独立地控制可动电极和检测用固定电极之间以及可动电极与灵敏度控制固定电极之间的电位差，以控制加速度的灵敏度。

3. 发明授权

US06653702B2 Semiconductor pressure sensor having strain gauge and circuit portion on semiconductor substrate 失效
标题翻译：具有应变计的半导体压力传感器和半导体衬底上的电路部分
公开(公告)号：US06653702B2
公开(公告)日：2003-11-25
申请号：US09866752
申请日：2001-05-30
申请人： Seiichiro Ishio , Inao Toyoda , Kazuaki Hamamoto , Yasutoshi Suzuki
发明人： Seiichiro Ishio , Inao Toyoda , Kazuaki Hamamoto , Yasutoshi Suzuki
IPC分类号： H01L2982
CPC分类号： H01L27/1203 , B81B2201/0264 , B81C1/00246 , B81C2203/0778 , G01L9/0054 , G01L9/06 , H01L21/84
摘要： A semiconductor pressure sensor includes a SOI substrate composed of first and second silicon substrates. A diaphragm portion is formed by the first silicon substrate as a bottom of a recess portion formed in the second silicon substrate. Strain gauges are formed on the diaphragm portion, and a circuit portion is formed on the first silicon substrate at a region other than the diaphragm portion. A LOCOS film for isolating the strain gauges from the circuit portion is formed on the first silicon substrate outside the outermost peripheral portion of the diaphragm portion.
摘要翻译：半导体压力传感器包括由第一和第二硅衬底构成的SOI衬底。隔膜部分由第一硅衬底形成为形成在第二硅衬底中的凹部的底部。应变计形成在隔膜部分上，并且电路部分在隔膜部分以外的区域形成在第一硅衬底上。在隔膜部分的最外周部分的外侧的第一硅基板上形成用于将应变计与电路部分隔离的LOCOS膜。

4. 发明授权

US06422088B1 Sensor failure or abnormality detecting system incorporated in a physical or dynamic quantity detecting apparatus 有权
标题翻译：传感器故障或异常检测系统结合在物理或动态量检测装置中
公开(公告)号：US06422088B1
公开(公告)日：2002-07-23
申请号：US09666085
申请日：2000-09-21
申请人： Nobukazu Oba , Yoshifumi Murakami , Yukihiko Tanizawa , Hiroaki Tanaka , Seiichiro Ishio , Inao Toyoda , Yasutoshi Suzuki
发明人： Nobukazu Oba , Yoshifumi Murakami , Yukihiko Tanizawa , Hiroaki Tanaka , Seiichiro Ishio , Inao Toyoda , Yasutoshi Suzuki
IPC分类号： G01L900
CPC分类号： G01L27/007 , G01D3/08 , G01L9/0054 , G01L9/02 , G01R17/10
摘要： A reference voltage generating circuit is constituted by resistors RE and RF each having a resistance not influenced by an application of pressure. The reference voltage generating circuit is connected between one and the other ends of a bridge circuit. A failure judgement of the bridge circuit is performed based on a comparison of a voltage difference VBC between two midpoints B and C of the bridge circuit and voltage differences VCE and VBE between a reference voltage level of the reference voltage generating circuit and the voltage levels of two midpoints B and C.
摘要翻译：参考电压发生电路由电阻器RE和RF构成，每个电阻器不受施加压力的影响。参考电压产生电路连接在桥接电路的一端和另一端之间。基于桥电路的两个中点B和C之间的电压差VBC与参考电压产生电路的参考电压电平之间的电压差VCE和VBE的比较，执行桥电路的故障判断，两个中点B和C.

5. 发明授权

US06521966B1 Semiconductor strain sensor 有权
标题翻译：半导体应变传感器
公开(公告)号：US06521966B1
公开(公告)日：2003-02-18
申请号：US09547457
申请日：2000-04-12
申请人： Seiichiro Ishio , Inao Toyoda , Yasutoshi Suzuki
发明人： Seiichiro Ishio , Inao Toyoda , Yasutoshi Suzuki
IPC分类号： H01L2982
CPC分类号： G01L19/147 , H01L2224/48091 , H01L2224/49171 , H01L2224/73265 , H01L2924/01068 , H01L2924/00014
摘要： A semiconductor strain sensor in which a sensor element for detecting a strain signal is mounted in a resin package member, which can restrain a creep stress of the package member from affecting to the sensor element. A semiconductor strain sensor is provided with a lead frame integrally molded with a resin package member, and a sensor chip made of silicon. The sensor chip is mounted on one surface of an element mounting portion of the lead frame, and is capable of externally outputting electric signal via a wire in accordance with strain when pressure is applied. An opening portion is provided in the package member, so that the entire area of another surface of the lead frame, where positions beneath the sensor chip, is non-contacted with the package member. Since another surface of the lead frame is non-contacted with the package member at the opening portion, even if the creep occurs in the package member, it can prevent stress (creep stress) undergone in accordance with the creep deformation from being transferred to the sensor chip.
摘要翻译：一种半导体应变传感器，其中用于检测应变信号的传感器元件安装在树脂封装构件中，其可以抑制封装构件的蠕变应力对传感器元件的影响。半导体应变传感器设置有与树脂封装构件一体模制的引线框架和由硅制成的传感器芯片。传感器芯片安装在引线框架的元件安装部分的一个表面上，并且能够在施加压力时根据应变通过导线从外部输出电信号。开口部分设置在封装构件中，使得引线框架的另一表面的位于传感器芯片下方的位置的整个区域与封装构件不接触。由于引线框架的另一表面在开口部处与封装构件不接触，所以即使在封装构件中发生蠕变，也可以防止根据蠕变变形而发生的应力（蠕变应力）被转移到传感器芯片。

6. 发明授权

US6065341A Semiconductor physical quantity sensor with stopper portion 有权
标题翻译：具有止动部分的半导体物理量传感器
公开(公告)号：US6065341A
公开(公告)日：2000-05-23
申请号：US209414
申请日：1998-12-11
申请人： Seiichiro Ishio , Minekazu Sakai , Kenichi Ao
发明人： Seiichiro Ishio , Minekazu Sakai , Kenichi Ao
IPC分类号： G01P15/08 , G01P15/125
CPC分类号： B81B3/0051 , G01P15/0802 , G01P15/125 , B81B2201/0235 , G01P2015/0814
摘要： A mass portion of a movable portion is supported by an anchor portion protruding from a substrate through a beam portion. A stopper portion fixed to the substrate through another anchor portion is disposed on a side opposite to the mass portion with respect to the beam portion to define a gap with the beam portion. The stopper portion is electrically connected to the beam portion through the anchor portions. Accordingly, the movable portion is restricted from being displaced in a direction generally parallel to a surface of the substrate, and a movable electrode of the movable portion is prevented from being attached to the fixed electrode.
摘要翻译：可移动部分的质量部分由通过梁部分从基底突出的锚固部分支撑。通过另一个锚定部分固定到基板的止动部分相对于梁部分设置在与质量部分相对的一侧上以限定与梁部分的间隙。止动部分通过锚定部电连接到梁部分。因此，可动部被限制在大致平行于基板的表面的方向上移动，并且防止可动部的可动电极附着到固定电极。

7. 发明授权

US06495389B2 Method for manufacturing semiconductor pressure sensor having reference pressure chamber 有权
公开(公告)号：US06495389B2
公开(公告)日：2002-12-17
申请号：US09924559
申请日：2001-08-09
申请人： Seiichiro Ishio , Inao Toyoda , Yasutoshi Suzuki
发明人： Seiichiro Ishio , Inao Toyoda , Yasutoshi Suzuki
IPC分类号： H01L2100
CPC分类号： B81C1/00833 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00047 , B81C2201/0116 , B81C2201/019
摘要： In a method for manufacturing a semiconductor pressure sensor, after a reference pressure chamber is formed inside a semiconductor substrate and a diaphragm is formed from a part of the semiconductor substrate, a heat treatment is performed to form an insulation film, an element, or the like on the semiconductor substrate. At that time, a heat treatment temperature is controlled to be lower than (−430P0+1430)° C. where P0 is an internal pressure (atm) of the reference pressure chamber at a room temperature. Accordingly, crystal defects can be prevented from being produced in the diaphragm.

8. 发明授权

US06933582B2 Semiconductor sensor having a diffused resistor 失效
标题翻译：具有扩散电阻器的半导体传感器
公开(公告)号：US06933582B2
公开(公告)日：2005-08-23
申请号：US10461336
申请日：2003-06-16
申请人： Seiichiro Ishio , Eishi Kawasaki
发明人： Seiichiro Ishio , Eishi Kawasaki
IPC分类号： G01L9/00 , H01L29/84 , H01L29/8605 , H01L29/82
CPC分类号： G01L9/0054 , H01L29/8605
摘要： A semiconductor sensor includes a P-type semiconductor substrate having a N-type semiconductor layer disposed on one surface of the substrate and a P-type diffused resistor disposed in the N-type semiconductor layer. A first electric voltage is applied to the N-type semiconductor layer, a second electric voltage is applied to the substrate, a third electric voltage is applied to the P-type diffused resistor. The first electric voltage is higher than the second and third electric voltages. The sensor ensures stable operation against electric leakage and high noise protection because two depletion layers are formed.
摘要翻译：半导体传感器包括具有设置在基板的一个表面上的N型半导体层的P型半导体基板和设置在N型半导体层中的P型扩散电阻器。向N型半导体层施加第一电压，向基板施加第二电压，向P型扩散电阻施加第三电压。第一电压高于第二和第三电压。该传感器确保了稳定的操作，防止漏电和高噪声保护，因为形成了两个耗尽层。

9. 发明授权

US06448624B1 Semiconductor acceleration sensor 失效
标题翻译：半导体加速度传感器
公开(公告)号：US06448624B1
公开(公告)日：2002-09-10
申请号：US08908939
申请日：1997-08-08
申请人： Seiichiro Ishio , Kenichi Ao , Minoru Murata , Yasuki Shimoyama , Tomohito Kunda , Norio Kitao
发明人： Seiichiro Ishio , Kenichi Ao , Minoru Murata , Yasuki Shimoyama , Tomohito Kunda , Norio Kitao
IPC分类号： H01L2982
CPC分类号： G01P15/123 , G01P1/006 , G01P15/0802 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor sensor chip is provided with a weight portion supported in a frame via beams whereby acceleration up to substantially ±1 G can be detected by utilizing piezoresistance effect of resistor elements formed on the beams. The semiconductor sensor chip is supported by a seat having a thermal expansion coefficient equivalent to that of the semiconductor sensor chip via the frame. The frame and the seat are adhered to each other by a flexible adhesive agent mixed with a plurality of resin beads functioning as spacers and under an adhesion state, air damping of the weight portion is carried out by setting a dimension of an air gap between the weight portion and the seat to a range of 7 through 15 &mgr;m.
摘要翻译：半导体传感器芯片具有通过光束支撑在框架中的重量部分，由此通过利用形成在梁上的电阻元件的压阻效应可以检测到大致±1G的加速度。半导体传感器芯片由具有与半导体传感器芯片的热膨胀系数相当的热膨胀系数经由框架支撑。框架和座椅通过与作为间隔件起作用的多个树脂珠混合的柔性粘合剂彼此粘合，并且在粘合状态下，通过将重量部分的空气阻力设定在重量部分和座椅到7到15毫米的范围。

10. 发明授权

US6143584A Method for fabrication of a semiconductor sensor 失效
标题翻译：半导体传感器的制造方法
公开(公告)号：US6143584A
公开(公告)日：2000-11-07
申请号：US121893
申请日：1998-07-24
申请人： Tsuyoshi Fukada , Masakazu Kanosue , Kenichi Ao , Minoru Murata , Seiichiro Ishio
发明人： Tsuyoshi Fukada , Masakazu Kanosue , Kenichi Ao , Minoru Murata , Seiichiro Ishio
IPC分类号： G01P15/12 , H01L21/00
CPC分类号： G01P15/123 , G01P15/124
摘要： A semiconductor sensor has gauge resistors. The gauge resistors connect with aluminum electrodes through contact holes, and form a bridge circuit. The gauge resistors are formed on each chip area of a semiconductor substrate before dicing the chip areas. Then, the resistances of the gauge resistors or the output of the bridge circuit are measured. Contact positions of the gauge resistors or the size and/or shape of the contact holes are adjusted based on the result of the measurement in order to adjust the offset voltage of the bridge circuit formed on each chip area.
摘要翻译：半导体传感器具有量规电阻。量规电阻器通过接触孔与铝电极连接，形成桥接电路。在切割芯片区域之前，在半导体衬底的每个芯片区域上形成量规电阻器。然后，测量电阻的电阻或桥接电路的输出。基于测量结果调整量规电阻器的接触位置或接触孔的尺寸和/或形状，以调整在每个芯片区域上形成的桥接电路的偏移电压。

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