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1. 发明授权

US08225660B2 Dynamic quantity sensor and method of manufacturing the same 有权
标题翻译：动态量传感器及其制造方法
公开(公告)号：US08225660B2
公开(公告)日：2012-07-24
申请号：US12792404
申请日：2010-06-02
申请人： Minekazu Sakai , Takashi Katsumata , Yoshiaki Murakami
发明人： Minekazu Sakai , Takashi Katsumata , Yoshiaki Murakami
IPC分类号： G01P9/04 , G01P1/02 , G01C19/56
CPC分类号： G01C19/5747 , B81B2207/012 , B81C99/0045 , G01C25/00 , H01L29/84
摘要： A dynamic quantity sensor includes a sensor chip, a base member, and bumps. The sensor chip includes a semiconductor substrate, a sensor part, and sensor pads electrically coupled with the sensor part. The base member includes a base substrate and base pads disposed on the base substrate. The bumps mechanically and electrically couple the sensor pads and the base pads, respectively, in a state where the sensor chip is curved with respect to the base member. The sensor pads include input pads and output pads. The first surface of the semiconductor substrate includes a first portion and a second portion. The first portion is closer to the base substrate than the second portion is. At least one of the input pads is disposed on the first portion and at least one of the output pads is disposed on the second portion.
摘要翻译：动态量传感器包括传感器芯片，基底构件和凸块。传感器芯片包括半导体衬底，传感器部分和与传感器部件电耦合的传感器衬垫。基座构件包括基底基板和设置在基底基板上的基座垫。在传感器芯片相对于基座构件弯曲的状态下，凸块分别机械地和电耦接传感器焊盘和基座。传感器焊盘包括输入焊盘和输出焊盘。半导体衬底的第一表面包括第一部分和第二部分。第一部分比第二部分更靠近基底基板。至少一个输入焊盘设置在第一部分上，并且至少一个输出焊盘设置在第二部分上。

2. 发明授权

US08601873B2 Angular velocity sensor 有权
标题翻译：角速度传感器
公开(公告)号：US08601873B2
公开(公告)日：2013-12-10
申请号：US13101175
申请日：2011-05-05
申请人： Minekazu Sakai , Tomoya Jomori , Takashi Katsumata
发明人： Minekazu Sakai , Tomoya Jomori , Takashi Katsumata
IPC分类号： G01C19/56
CPC分类号： G01C19/5747
摘要： In an angular velocity sensor, a vibrator is coupled with a substrate through a beam part, and is movable in a first direction and a second direction that is perpendicular to the first direction. A driving part is configured to vibrate the vibrator in the first direction. A detecting part is configured to detect displacement of the vibrator in the second direction as a change in capacitance, the displacement being caused by Coriolis force generated in the vibrator due to vibration of the vibrator and an angular velocity around a third direction that is perpendicular to the first direction and the second direction. A restricting part is configured to restrict displacement of the vibrator in the second direction based on the change in capacitance. The angular velocity sensor is configured to satisfy a condition where β sin θ is equal to or less than 1.
摘要翻译：在角速度传感器中，振动器通过梁部与基板连接，并且能够在垂直于第一方向的第一方向和第二方向上移动。驱动部构造成使振动体沿第一方向振动。检测部被配置为检测振动器在第二方向上的位移作为电容的变化，该位移是由振动器产生的科里奥利力引起的，由于振动器的振动以及与第三方向垂直的第三方向的角速度第一个方向和第二个方向。限制部件被配置为基于电容的变化来限制振动器在第二方向上的位移。角速度传感器被配置为满足βsinθ等于或小于1的条件。

3. 发明授权

US07007550B2 Semiconductor dynamic quantity sensor 有权
标题翻译：半导体动量传感器
公开(公告)号：US07007550B2
公开(公告)日：2006-03-07
申请号：US10806278
申请日：2004-03-23
申请人： Minekazu Sakai , Takashi Katsumata
发明人： Minekazu Sakai , Takashi Katsumata
IPC分类号： G01P15/10 , G01P15/125
CPC分类号： G01P15/18 , G01P15/125 , G01P2015/082
摘要： In a semiconductor dynamic quantity sensor, a mass serving as a weight portion for detecting application of a dynamic quantity is divided into three masses (301, 302, 303) in series. The masses (301, 302, 303) thus divided are connected to one another by connecting beams (CB1, CB2, CB3, CB4). The masses (301, 302, 303) located at both the end portions are supported through beams (B1, B2, B3, B4) by a semiconductor substrate (1) so as to be allowed to be displaced in the direction orthogonal to the connection direction of the masses. The center mass (302) connected to the masses (301, 302, 303) through the connecting beams (CB1, CB2, CB3, CB4) is allowed to be displaced only in the connecting direction of the masses by the connecting beams (CB1, CB2, CB3, CB4).
摘要翻译：在半导体动态量传感器中，用作检测动态量的应用的重量部分的质量被串联分成三个质量（301,302,303）。这样被分割的质量块（301,302,303）通过连接梁（CB 1，CB 2，CB 3，CB 4）相互连接。位于两个端部的质量块（301,302,303）通过半导体衬底（1）通过光束（B 1，B 2，B 3，B 4）支撑，以便允许其在方向正交于质量的连接方向。通过连接梁（CB 1，CB 2，CB 3，CB 4）连接到质量块（301,302,303）的中心质量块（302）仅通过连接件在质量块的连接方向上移位梁（CB 1，CB 2，CB 3，CB 4）。

4. 发明申请

US20110248363A1 PHYSICAL QUANTITY DETECTION DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：物理量检测装置及其制造方法
公开(公告)号：US20110248363A1
公开(公告)日：2011-10-13
申请号：US13083732
申请日：2011-04-11
申请人： Tetsuo FUJII , Minekazu Sakai , Takumi Shibata
发明人： Tetsuo FUJII , Minekazu Sakai , Takumi Shibata
IPC分类号： H01L29/84 , H01L21/20
CPC分类号： G01L9/0005
摘要： A physical quantity detection device includes: an insulating layer; a semiconductor layer on the insulating layer; and first and second electrodes in the semiconductor layer. Each electrode has a wall part, one of which includes two diaphragms and a cover part. The diaphragms facing each other provide a hollow cylinder having an opening covered by the cover part. One diaphragm faces the other wall part or one diaphragm in the other wall part. A distance between the one diaphragm and the other wall part or the one diaphragm in the other wall part is changed with pressure difference between reference pressure in the hollow cylinder and pressure of an outside when a physical quantity is applied to the diaphragms. The physical quantity is detected by a capacitance between the first and second electrodes.
摘要翻译：物理量检测装置包括：绝缘层; 绝缘层上的半导体层; 以及半导体层中的第一和第二电极。每个电极具有壁部分，其中一个包括两个隔膜和盖部分。彼此相对的隔膜提供具有由盖部分覆盖的开口的中空圆柱体。一个隔膜面对另一个壁部分或另一个壁部分的一个隔膜。当物理量施加到隔膜时，一个隔膜和另一个壁部分中的另一个壁部分或一个隔膜之间的距离随空心圆柱体中的参考压力和外部压力之间的压力差而改变。物理量由第一和第二电极之间的电容检测。

5. 发明授权

US07678589B2 Semiconductor device for providing capacitive semiconductor sensor and method for manufacturing capacitive semiconductor sensor 有权
标题翻译：用于提供电容半导体传感器的半导体器件和用于制造电容半导体传感器的方法
公开(公告)号：US07678589B2
公开(公告)日：2010-03-16
申请号：US11723428
申请日：2007-03-20
申请人： Minekazu Sakai , Tameharu Oota
发明人： Minekazu Sakai , Tameharu Oota
IPC分类号： H01L21/66
CPC分类号： G01P15/125 , B81C1/00238 , B81C99/004 , G01P15/0802 , H01L2224/94
摘要： A method for manufacturing a capacitive semiconductor sensor includes: forming a plurality of circuit chips in a wafer, wherein each circuit chip includes a pad for testing a sensor chip; bonding the sensor chip on each circuit chip with a bump so that the sensor chip is electrically coupled with the circuit chip, wherein each sensor chip is made of semiconductor and has a capacitance changing portion, which is disposed on one side of the sensor chip and has a variable capacitance, wherein the circuit chip detects a capacitance change of the sensor chip, and wherein the one side of the sensor chip faces the circuit chip; testing each sensor chip through the pad; and cutting the wafer into individual circuit chips so that the circuit chip and the sensor chip provide the capacitive semiconductor sensor.
摘要翻译：制造电容式半导体传感器的方法包括：在晶片中形成多个电路芯片，其中每个电路芯片包括用于测试传感器芯片的焊盘; 将每个电路芯片上的传感器芯片与凸块接合，使得传感器芯片与电路芯片电耦合，其中每个传感器芯片由半导体制成，并具有电容改变部分，其设置在传感器芯片的一侧，具有可变电容，其中电路芯片检测传感器芯片的电容变化，并且其中传感器芯片的一侧面向电路芯片; 通过垫片测试每个传感器芯片; 并将晶片切割成单独的电路芯片，使得电路芯片和传感器芯片提供电容半导体传感器。

6. 发明申请

US20070090536A1 Sensor having semiconductor chip and circuit chip 审中-公开
标题翻译：传感器具有半导体芯片和电路芯片
公开(公告)号：US20070090536A1
公开(公告)日：2007-04-26
申请号：US11522916
申请日：2006-09-19
申请人： Minekazu Sakai , Ryuichiro Abe , Yasunori Ninomiya
发明人： Minekazu Sakai , Ryuichiro Abe , Yasunori Ninomiya
IPC分类号： H01L23/48
CPC分类号： G01C19/5719 , B81C1/0023 , G01P1/023 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/16 , H01L2924/01068 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/00 , H01L2924/00014
摘要： A sensor includes: a semiconductor chip having a sensing portion; a circuit chip; and first and second films. The sensing portion is disposed on a first side of the semiconductor chip. The first side of the semiconductor chip is electrically connected to the circuit chip through a bump. The first side of the semiconductor chip faces the circuit chip. The first film is disposed on the first side of the semiconductor chip. The first film covers the sensing portion, and is made of resin, and the second film is made of resin, and disposed on a second side of the semiconductor chip.
摘要翻译：传感器包括：具有感测部分的半导体芯片; 电路芯片; 第一和第二部电影。感测部分设置在半导体芯片的第一侧上。半导体芯片的第一侧通过凸块与电路芯片电连接。半导体芯片的第一面面向电路芯片。第一膜设置在半导体芯片的第一侧上。第一膜覆盖感测部分，并且由树脂制成，第二膜由树脂制成，并且设置在半导体芯片的第二侧上。

7. 发明授权

US07197939B2 Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US07197939B2
公开(公告)日：2007-04-03
申请号：US11046792
申请日：2005-02-01
申请人： Minekazu Sakai , Yasutoshi Suzuki
发明人： Minekazu Sakai , Yasutoshi Suzuki
IPC分类号： G01L21/12 , G01L9/00
CPC分类号： G01L9/0054 , G01L19/0627 , G01L19/0636
摘要： A pressure sensor includes a semiconductor substrate and a pedestal member such as a glass pedestal. The semiconductor substrate has a diaphragm for detecting a pressure and a thick portion positioned around the diaphragm. The pedestal member has one surface bonded to the thick portion of the semiconductor substrate and the other surface opposite to the one surface. In the pressure sensor, the pedestal member has a through hole through which pressure is introduced to the diaphragm. The through hole penetrates through the pedestal member from an opening of the other surface to the one surface of the pedestal member, and the through hole has a hole diameter that becomes smaller from the one surface toward the other surface of the pedestal member. Accordingly, it can effectively restrict foreign materials such as dusts from being introduced into the through hole of the pressure sensor.
摘要翻译：压力传感器包括半导体基板和诸如玻璃基座的基座构件。半导体衬底具有用于检测压力的膜片和位于膜片周围的厚壁部分。基座构件具有一个表面，其结合到半导体衬底的厚部分，另一个表面与该表面相对。在压力传感器中，基座构件具有通向该隔膜的压力的通孔。通孔从另一个表面的开口穿过基座构件到基座构件的一个表面，并且通孔具有从基座构件的一个表面朝向另一个表面变小的孔直径。因此，能够有效地将诸如灰尘的异物引入压力传感器的通孔中。

8. 发明授权

US06848309B2 Capacitive type dynamic quantity sensor 有权
标题翻译：电容式动态量传感器
公开(公告)号：US06848309B2
公开(公告)日：2005-02-01
申请号：US10291420
申请日：2002-11-12
申请人： Minekazu Sakai
发明人： Minekazu Sakai
IPC分类号： G01P15/125 , H01L29/84
CPC分类号： G01P15/125 , G01P2015/0814
摘要： In a capacitive type dynamic quantity sensor, a width of a beam in a beam portion extending in a direction that is perpendicular to a predetermined deformation direction and a gap disposed between a movable electrode and the fixed electrode in the predetermined deformation direction are approximately identical. Accordingly, manufacturing error is prevented from affecting the sensitivity of the capacitive type dynamic quantity sensor. For example, a manufacturing tolerance error of ±2.5% is allowed as a result of designing the width of the beam and the gap to be identical in length.
摘要翻译：在电容型动态量传感器中，沿着与预定变形方向垂直的方向延伸的梁部分中的梁的宽度和在预定变形方向上设置在可动电极和固定电极之间的间隙的宽度大致相同。因此，防止制造误差影响电容式动态量传感器的灵敏度。例如，通过设计光束的宽度和长度上相同的间隙，允许±2.5％的制造公差误差。

9. 发明授权

US06591678B2 Semiconductor dynamic quantity sensor for detecting dynamic quantity in two axes with X-shaped mass portion 有权
公开(公告)号：US06591678B2
公开(公告)日：2003-07-15
申请号：US09963409
申请日：2001-09-27
申请人： Minekazu Sakai
发明人： Minekazu Sakai
IPC分类号： G01P1500
CPC分类号： B81B3/0062 , B60R21/0132 , B60R2021/01006 , B81B2201/0235 , B81B2203/0109 , B81B2203/0136 , B81B2203/04 , G01C19/5719 , G01P15/125 , G01P15/18 , G01P2015/082
摘要： A dynamic quantity sensor includes a semiconductor substrate, a movable electrode, first fixed electrodes and second fixed electrodes. The movable electrode includes a mass portion and electrode portions. The mass portion includes two rod portions which cross each other in an X-shaped configuration. The first fixed electrodes form, with the electrode portions, first capacitors for detecting displacement of the movable electrode in a first direction. The second fixed electrodes form, with the electrode portions, second capacitors for detecting displacement of the movable electrode in a second direction. The movable electrode is constructed so that a ratio of its resonant frequency corresponding to the second direction to its resonant frequency corresponding to the first direction is equal to or larger than 1.41.

10. 发明授权

US06450031B1 Semiconductor physical quantity sensor 有权
标题翻译：半导体物理量传感器
公开(公告)号：US06450031B1
公开(公告)日：2002-09-17
申请号：US09625860
申请日：2000-07-26
申请人： Minekazu Sakai , Minoru Murata , Seiki Aoyama , Youko Nakagawa
发明人： Minekazu Sakai , Minoru Murata , Seiki Aoyama , Youko Nakagawa
IPC分类号： G01P1500
CPC分类号： G01P15/125 , B81B3/0086 , B81B2201/0235 , B81B2203/0109 , B81B2203/051 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor physical quantity sensor from which a stable sensor output can be obtained even when the usage environment changes. A silicon thin film is disposed on an insulating film on a supporting substrate, and a bridge structure having a weight part and moving electrodes and cantilever structures having fixed electrodes are formed as separate sections from this silicon thin film. The moving electrodes provided on the weight part and the cantilevered fixed electrodes are disposed facing each other. Slits are formed at root portions of the cantilevered fixed electrodes at the fixed ends thereof, and the width W1 of the root portions is thereby made narrower than the width W2 of the fixed electrodes proper. As a result, the transmission of warp of the supporting substrate to the cantilevered fixed electrodes is suppressed.
摘要翻译：一种半导体物理量传感器，即使在使用环境变化的情况下也能够获得稳定的传感器输出。将硅薄膜设置在支撑基板上的绝缘膜上，并且具有重量部分的电桥结构和具有固定电极的移动电极和悬臂结构形成为与该硅薄膜分开的部分。设置在重量部分和悬臂固定电极上的移动电极彼此面对地设置。在悬臂固定电极的固定端的根部处形成狭缝，从而使根部的宽度W1比固定电极本体的宽度W2窄。结果，抑制了支撑基板的翘曲向悬臂固定电极的传递。

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