专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07612433B2 Semiconductor device having self-aligned contact 有权
标题翻译：具有自对准接触的半导体器件
公开(公告)号：US07612433B2
公开(公告)日：2009-11-03
申请号：US11162725
申请日：2005-09-21
申请人： Min-San Huang , Hann-Jye Hsu , Yung-Chung Yao
发明人： Min-San Huang , Hann-Jye Hsu , Yung-Chung Yao
IPC分类号： H01L29/06 , H01L23/58
CPC分类号： H01L21/76897 , H01L21/823425 , H01L21/823475
摘要： A method of manufacturing semiconductor devices having self-aligned contacts is provided. Multiple isolation structures are formed on the substrate to define an active area. Multiple gate structures are formed on the substrate. Multiple doped areas are formed in the substrate beside each gate structure. Multiple first spacers are formed on the sidewalls of each of the gate structure. Multiple second spacers are formed on the sidewalls of each of the isolation structure. A dielectric layer is formed on the substrate. Then, a self-aligned process is performed to form multiple contact openings in the dielectric layer between the gate structures. The conductive material is filled in the contact openings.
摘要翻译：提供一种制造具有自对准触点的半导体器件的方法。在衬底上形成多个隔离结构以限定有源区。在基板上形成多个栅极结构。在每个栅极结构旁边的衬底中形成多个掺杂区域。在每个栅极结构的侧壁上形成多个第一间隔物。多个第二间隔件形成在每个隔离结构的侧壁上。在基板上形成电介质层。然后，进行自对准工艺以在栅极结构之间的介电层中形成多个接触开口。导电材料填充在接触开口中。

2. 发明申请

US20060183295A1 SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：具有自对准接触件的半导体器件及其制造方法
公开(公告)号：US20060183295A1
公开(公告)日：2006-08-17
申请号：US11162725
申请日：2005-09-21
申请人： Min-San Huang , Hann-Jye Hsu , Yung-Chung Yao
发明人： Min-San Huang , Hann-Jye Hsu , Yung-Chung Yao
IPC分类号： H01L21/76
CPC分类号： H01L21/76897 , H01L21/823425 , H01L21/823475
摘要： A method of manufacturing semiconductor devices having self-aligned contacts is provided. Multiple isolation structures are formed on the substrate to define an active area. Multiple gate structures are formed on the substrate. Multiple doped areas are formed in the substrate beside each gate structure. Multiple first spacers are formed on the sidewalls of each of the gate structure. Multiple second spacers are formed on the sidewalls of each of the isolation structure. A dielectric layer is formed on the substrate. Then, a self-aligned process is performed to form multiple contact openings in the dielectric layer between the gate structures. The conductive material is filled in the contact openings.
摘要翻译：提供一种制造具有自对准触点的半导体器件的方法。在衬底上形成多个隔离结构以限定有源区。在基板上形成多个栅极结构。在每个栅极结构旁边的衬底中形成多个掺杂区域。在每个栅极结构的侧壁上形成多个第一间隔物。多个第二间隔件形成在每个隔离结构的侧壁上。在基板上形成电介质层。然后，进行自对准工艺以在栅极结构之间的介电层中形成多个接触开口。导电材料填充在接触开口中。

3. 发明授权

US07803692B2 Manufacturing method of semiconductor device having self-aligned contact 有权
标题翻译：具有自对准接触的半导体器件的制造方法
公开(公告)号：US07803692B2
公开(公告)日：2010-09-28
申请号：US12562142
申请日：2009-09-18
申请人： Min-San Huang , Hann-Jye Hsu , Yung-Chung Yao
发明人： Min-San Huang , Hann-Jye Hsu , Yung-Chung Yao
IPC分类号： H01L21/76 , H01L21/336
CPC分类号： H01L21/76897 , H01L21/823425 , H01L21/823475
摘要： A method of manufacturing semiconductor devices having self-aligned contacts is provided. Multiple isolation structures are formed on the substrate to define an active area. Multiple gate structures are formed on the substrate. Multiple doped areas are formed in the substrate beside each gate structure. Multiple first spacers are formed on the sidewalls of each of the gate structure. Multiple second spacers are formed on the sidewalls of each of the isolation structure. A dielectric layer is formed on the substrate. Then, a self-aligned process is performed to form multiple contact openings in the dielectric layer between the gate structures. The conductive material is filled in the contact openings.
摘要翻译：提供一种制造具有自对准触点的半导体器件的方法。在衬底上形成多个隔离结构以限定有源区。在基板上形成多个栅极结构。在每个栅极结构旁边的衬底中形成多个掺杂区域。在每个栅极结构的侧壁上形成多个第一间隔物。多个第二间隔件形成在每个隔离结构的侧壁上。在基板上形成电介质层。然后，进行自对准工艺以在栅极结构之间的介电层中形成多个接触开口。导电材料填充在接触开口中。

4. 发明申请

US20100003796A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACT 有权
标题翻译：具有自对准接触的半导体器件的制造方法
公开(公告)号：US20100003796A1
公开(公告)日：2010-01-07
申请号：US12562142
申请日：2009-09-18
申请人： Min-San Huang , Hann-Jye Hsu , Yung-Chung Yao
发明人： Min-San Huang , Hann-Jye Hsu , Yung-Chung Yao
IPC分类号： H01L21/77
CPC分类号： H01L21/76897 , H01L21/823425 , H01L21/823475
摘要： A method of manufacturing semiconductor devices having self-aligned contacts is provided. Multiple isolation structures are formed on the substrate to define an active area. Multiple gate structures are formed on the substrate. Multiple doped areas are formed in the substrate beside each gate structure. Multiple first spacers are formed on the sidewalls of each of the gate structure. Multiple second spacers are formed on the sidewalls of each of the isolation structure. A dielectric layer is formed on the substrate. Then, a self-aligned process is performed to form multiple contact openings in the dielectric layer between the gate structures. The conductive material is filled in the contact openings.
摘要翻译：提供一种制造具有自对准触点的半导体器件的方法。在衬底上形成多个隔离结构以限定有源区。在基板上形成多个栅极结构。在每个栅极结构旁边的衬底中形成多个掺杂区域。在每个栅极结构的侧壁上形成多个第一间隔物。多个第二间隔件形成在每个隔离结构的侧壁上。在基板上形成电介质层。然后，进行自对准工艺以在栅极结构之间的介电层中形成多个接触开口。导电材料填充在接触开口中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式